Wedding……

兄弟结婚了，朋友结婚了，朋友的朋友结婚了；男的结婚了，女的结婚了，不男不女的也结婚了；有感情的结婚了，没感情的结婚了，认识不认识的结婚已经无所谓了……     

乱

江湖最近挺乱. 金融海啸了,经济危机了;奥巴马当选了,杨致远下课了;三聚氰胺走了又来了,"林书记"来了又走了;百度乱卖广告被央视曝光了,首富黄光裕涉嫌违法被拘查了;国家开始上万亿的花钱了,央行敢于一百零八个基点的降息了!     

临界连续模式功率因数校正器的高频数字控制研究

本文提出了一种无需检测电感电流及其过零点的简单数字控制方案，实现了临界连续模式功率因数校正器的控制。取得了功率开关管的ZVZCS，消除了整流二极管和快恢复二极管的反向恢复带来的损耗，提高了变换器的效率和可靠性；另外，数字控制器克服了模拟IC控制器的开关频率限制问题，消除了输入电流的低频畸变，提高了功率因数；同时，也降低了输入电感的值，降低了成本的同时提高了功率密度。为实现中小功率数字控制功率因数校正器的产品化提供了一个良好的解决方案。     

基于nRF905的无线通信的设计与实现

针对采用芯片nRF905的LED屏无线通信,分别给出了上位机和下位机的系统框图,分析了系统的功耗,比较了无线模块和串口通信的通信速率,验证了系统的可行性,设计了串口通信协议,为保证数据质量,设计了数据通信协议,针对串口数据的nRF905分包转发,设计了无线芯片通信协议,例举了状态机的5种状态,介绍了状态间的转换条件,巧妙地编程设计了通信数据的定时器检查,论述了基于状态机的嵌入式单片机软件编程。     

干扰电子通信的要素以及应对策略的探讨

在当今的社会中,人们已经离不开电子通信了,其作为了一个新兴产业,并得到了良好的应用,对各行各业起到了促进作用,同时,传统的产业收到了冲击。我国的电子通信发展较快,达到了先进的水平,不过,由于发展时间较短,存在很多不足之处,拉低了整体水平。特别是干扰问题,严重影响了电子通信的发展。本文对电子通信进行了概述,探讨了干扰要素,并且,提出了相关的应对策略。     

加法器结构的大功率固态脉冲调制器的研究

介绍了大功率固态调制器电路常用的拓扑结构,讨论了开关直接串联与加法器叠加两种拓扑结构的特点.设计了基于绝缘栅双极性晶体管的加法器结构的大功率固态脉冲调制器,探讨了该类型大功率调制器的关键技术,介绍了调制器系统参数,并与国内外大功率调制器进行了对比.重点阐述了调制器实验,给出了实验结果,并对实验结果进行了分析.最后探讨了加法器结构的大功率固态脉冲调制器的优势及应用潜力.     

ATM原理概论

介绍了ATM技术的框架，详细描述了ATM的协议栈；介绍了ATM的信元结构，描述了信元边界判定算法，指出了特殊信元的结构；叙述了常用的ATM适配层协议AAL1－AAL5；简单介绍了ATM的维护功能；最后指出了影响ATM性能的重要参数。     

铝电解电容器技术的新进展

详细讨论了电子技术的发展对铝电解电容器的性能要求,提出了其技术对策,分析了存在的技术瓶颈,找出了它的技术出路,探讨了它的技术难点,给出了当前我国铝电解电容器行业的技术现状,指出了未来发展方向。     

紫外通信综合实验平台信号源设计

阐述了紫外通信的优劣性,分析了紫外通信综合实验平台信号源设计的必要性,设计了紫外通信实验平台的系统结构方案,分析了各部分功能,给出了信号源设计的要求,选用了信号产生芯片MAX038与ICL8038,探讨了两者工作原理,对比了两者的优劣性,根据系统信号源参数要求设计了MAX038外围器件工作参数,最后使用OrCAD Pspice完成了电路的仿真,并通过2个结果分析验证了电路的可行性,这对系统的构建具有十分重要的指导意义。     

一种采用电容共用技术的DC-DC开关电源软启动电路

开关电源DC-DC转换器已经在各种电子设备中取得了广泛的应用。软启动电路保证了DC-DC转换器的正常启动,防止了器件的损坏。从理论上分析了软启动电路原理,设计了一种新型的开关电源软启动电路,该电路引入了电容共用方法,通过与频率补偿电容共用节省了软启动电容,降低了应用成本。并给出了具体电路实现,Spectre仿真结果验证了这种电路的可行性。     

微波功率SiGe HBT研究进展

Si的热导率比大部分化合物半导体(如GaAs)的热导率高,SiGe HBT在一个较宽的温度范围内稳定,SiGe HBT的发射结电压VBE的温度系数dVBE/dT比Si的小,双异质结SiGe HBT本身具有热-电耦合自调能力,所加镇流电阻可以较小,所有这些使SiGe HBT比GaAs HBT和SiBJT在功率处理能力上占一定优势。文章对微波功率SiGe HBT一些重要方面的国内外研究进展进行评述,希望对从事微波功率SiGe HBT的研究者有所帮助。     

Numerical modeling of parasitic barrier formation at the SiGe/Si heterojunction due to p–n junction displacement

The formation and characteristics of a parasitic conduction band barrier located at a SiGe/Si heterojunction have been investigated using a commercial numerical simulator and a simple, three-region model of a heterojunction with a nearby p–n junction. The barrier’s formation is examined as a function of the displacement of the p–n junction from the heterojunction, but also found to depend on the germanium concentration, junction doping and the applied bias. The phenomenon is of interest for understanding the performance of SiGe/Si heterojunction bipolar transistors, where the p–n junction is intentionally displaced from the heterojunction at either the emitter or collector junctions or where boron outdiffusion from the base produces p–n junction displacement. The barrier is found to scale with the germanium mole fraction and to be significantly larger when the heterojunction is displaced into the p-side of the p–n junction. Beyond some minimum separation of the junctions, the barrier height rises with junction displacement and saturates. For a given displacement, the barrier’s height can be suppressed with reverse bias or enhanced by forward bias of the p–n junction. The results of the numerical simulations are compared with those from a simple analytical model as an aid in understanding the barrier’s formation and characteristics.     

Effects of annealing on the hydrogen concentration and the performance of InGaP/InGaAsN/GaAs heterojunction bipolar transistors

The effects of rapid thermal annealing (RTA) on InGaP/InGaAsN heterojunction bipolar transistors (HBTs) with a carbon-doped base have been studied. The hydrogen and nitrogen concentrations in the base, as well as the direct current (DC) and radio frequency (RF) device performance, were studied as a function of the annealing temperature. A 30-sec anneal at 650°C and 700°C under N₂ ambient effectively eliminates hydrogen from the base. As the annealing temperature is increased, the base sheet resistance decreases, and the corresponding maximum frequency of oscillation increases. For all annealing temperatures studied, we found degradation in the DC gain, presumably caused by the increase of nitrogen concentration in the base region.     

SiGe HBT的速度优化设计

从理论分析角度介绍了优化SiGe异质结晶体管速度的方法。结合双极晶体管的工艺限制，介绍了SiGeHBT的基本原理，讨论了SiGeHBT的发射区／基区／集电区设计。最后，以一个100GHzfmax和fT的HBT为例，对电路制作工艺参数进行了讨论。     

Multi-finger power SiGe HBTs for thermal stability enhancement over a wide biasing range

Multi-finger power SiGe heterojunction bipolar transistors (HBTs) with emitter ballasting resistor and non-uniform finger spacing are fabricated, and temperature profiles of them are measured. Experimental results show that both of them could improve the temperature profile compared with an HBT which has uniform finger spacing. For the HBT with emitter ballasting resistor, the ability to lower the peak temperature is weakened as power increases. However, for the HBT with non-uniform finger spacing, the ability to improve temperature profile is kept over a wide biasing range. Therefore, the experimental results directly prove that the technique of non-uniform finger spacing is a better method for enhancing the thermal stability of power HBTs over a wide biasing range.     

SiGe/Si HBT低频噪声特性研究

对Si/Si1-xGexHBT的低频噪声进行了模拟。频率、基极电流、集电极电流、发射极几何尺寸(面积、条长)、Ge组份x、温度等诸多因素都对低频噪声有影响。模拟结果表明,Si/SiGeHBT具有优异的低频噪声特性。     

A General Equation for the Suppressor Controlled Transconductance of a Pentode†

The pentode valve is a well-known vacuum tube device which has wide applications. In some of the applications the suppressor grid of a pentode, instead of being connected to the cathode, is given a negative bias. Under these conditions the transconductance of the pentode becomes a function of both suppressor and control grid voltages. A general equation For this transconductance is obtained which is useful for analysis of circuits employing this configuration.     

A new design of the SiC light-activated Darlington power transistor

A SiC light-activated Darlington heterojunction transistor is proposed for anti-EMI (electromagnetic interference) applications, in which a monolithically integrated SiCGe/SiC pn heterojunction photodiode is employed to produce a light-induced base current for triggering the transistor. Performance of the proposed light-activated power switch was simulated using MEDICI tools. Feasibility of the proposal is confirmed by its good light-activation characteristics obtained from the simulation. The simulation also demonstrates that good I-V characteristics with a light-independent turn-on voltage knee of about 5 V may be achievable to the light-activated power switch has.     

Modeling of SiGe-base heterojunction bipolar transistor with gaussian doping distribution

The results of numerical modeling of the base transit time and collector current of SiGe-base heterojunction bipolar transistors with a Gaussian base doping profile and two Ge profiles (linearly graded and box) are presented for the first time. The importance of including the dependence of minority carrier mobility on the drift field and the dependence of the effective density of states on the Ge concentration along the base is demonstrated through the analysis of base transit time and collector current. A function describing the decrease of the density of states product in strained SiGe layers with increasing Ge concentration is proposed.     

基于小信号等效电路模型的SiGe HBT 高频特性模拟分析

给出了fr为15 GHz的SiGe HBT器件的高频小信号等效电路模型;运用微波网络理论,在Matlab软件平台上模拟出器件的S参数和H21参数曲线,模拟结果与实测结果相吻合;根据电路的拓扑结构,分析了管壳封装带来的寄生参数对器件高频性能的影响;根据稳定性判据,计算了器件的稳定性与工作频率之间的关系.为器件的设计和应用提供了理论依据.