闪烁纤维中子探测器灵敏度研究

用蒙特卡罗方法研究了1种闪烁纤维中子探测器对不同能量中子和伽玛射线的相对灵敏度，并在实验室对几个能点的灵敏度进行了标定。实验结果表明：理论计算与实验标定的探测器能量响应曲线趋势基本一致，探测器对2．5MeV中子和1．25MeV伽玛射线的灵敏度比值为5．3。利用实验数据对计算值进行校正，可给出探测器能量响应全曲线。     

铑自给能中子探测器的灵敏度

本文给出了铑自给能探测器的热中子灵敏度和中子灵敏度的理论计算公式、燃耗修正公式以及不同中子温度下的换算公式。运用这些公式对ZTRh 123型铑自给能探测器的热中子灵敏度和中子灵敏度进行了理论计算,并在反应堆中对其进行了实验验证。其结果表明,理论计算值和实验标定值是相吻合的。其偏差:热中子灵敏度为8.5％,中子灵敏度为3.9％。     

组合PIN脉冲中子探测器的能量响应

组合PIN脉冲中子探测器由一对PIN半导体和中子辐射体组成。理论计算了CH2和^235U分别作为中子辐射体的组合PIN脉冲中子探测器的灵敏度随中子能量的变化;用脉冲中子源实验测量了由CH2辐射体组成的探测器的14MeV中子灵敏度,实验结果与计算符合很好。     

载6Li塑料闪烁探测器中子能量响应的实验研究

为提高塑料闪烁探测器对低能中子的探测灵敏度,根据中子灵敏度补偿原理研制了载^6Li塑料闪烁探测器。利用串列加速器中子源对几种新研制的载^6Li塑料闪烁探测器中子能量响应进行了实验标定,获得了几种掺不同^6Li浓度的塑料闪烁探测器的中子能量响应曲线。实验结果表明,载^6Li塑料闪烁探测器对低能中子确有较高的探测灵敏度。     

闪烁探测器中子灵敏度高精度标定技术

叙述了探测器的14.1MeV中子灵敏度标定原理和方法,针对实验空间小,干扰大的特点,采取了有效的屏蔽措施,利用MCNP程序建模,优化设计出了对次级γ和散射中子屏蔽性能高的屏蔽体,实验研究表明:ST401、YaP:Ce、 CeF3的信噪比分别达30∶1、11∶1、6.6∶1,比测点本身的信噪比提高了7倍,灵敏度标定精度提高了20%以上.     

液体闪烁探测器氘氚中子灵敏度标定

本文通过脉冲中子管测量了液体闪烁探测器的ＤＴ中子灵敏度。实验结果表明：在“神光”装置几何条件下，液体闪烁探测器的ＤＴ中子灵敏度为２５０±３０中子／脉冲。     

带有厚吸收片的PIN中子探头灵敏度的计算

提出了一个计算带有厚吸收的ＰＩＮ中子探头灵敏度的方法，即分层分块蒙特卡罗模拟联合模型，根据计算过程，用ＦＯＲＴＲＡＮ７７语言编写了计算程序ＬＰＭＣ，其计算方法本身的误差不大于１．８８％，ＬＰＭＣ计算结果与实验值在相对误差范围内符合，解决了仅用ＬＰ理论对带有厚吸收片的ＰＩＮ中子探头灵敏度计算结果与实验偏差过大的问题。     

ST-401图像转换屏γ射线-中子相对灵敏度测量

介绍了测量图像转换屏对60Coγ射线与DT中子相对灵敏度的实验方法.在中子灵敏度测量中,用脉冲中子源测量了γ射线贡献份额,在γ射线灵敏度标定中,使用与中子实验同一实验设置,钴源与中子源交替标定.给出了不同厚度ST-401闪烁体对1.25MeVγ射线与14.85MeV中子的相对灵敏度及测量不确定度.     

共轴对称组合中子探测器灵敏度研究

在某些应用场合,要求中子计数管具有快收集时间、高中子灵敏度、低工作电压等特性,但是单一只中子正比管无法满足全部的要求,这时需要使用多支中子计数管组合的方式来实现测量目的。本文通过对三种常用中子正比计数管类型进行三支中子正比计数管共轴对称组合,并对其进行实验,得出了其在组合后的对中子灵敏度等特性的影响。     

光电倍增管中子直照响应实验研究

采用脉冲束中子飞行时间法和脉冲电荷计数法相结合的多参数测量方法,在中国原子能科学研究院HI-13串列加速器上,利用9Be(d,n)10B反应白光中子源,实验研究了光电倍增管对0.75～15MeV之间的出射中子直照灵敏度。根据光电倍增管的工作原理,采用MCNP程序模拟计算了光电倍增管的中子直照灵敏度。分析表明,计算结果与实验结果基本一致。     

Subnanosecond current mode detectors for prompt physical process diagnosis

For prompt physical diagnosis,several types of subnanosecond current mode detectors have been developed,including scintillator detectors with large linear output current,GaAs:Cr and In P:Fe photoconductor detectors(PCD),and X-ray diodes(XRD),etc.The characteristic of scintillation light of BaF2 crystal doped with La and of plastic scintillator ST1422 with slow component quencher are described.As for the photoconductor detectors,the main performance of neutron damaged GaAs:Cr and InP:Fe were studied.In addition,the spectral response of an XRD with coaxial leading-out end was also studied.These detectors have been successfully applied to nuclear test diagnosis and ICF research.     

Radiation Detectors in High Energy Physics

Spark chambers, scintillation and Cerenkov detectors are used extensively in high energy physics experiments. The potential usefulness of semiconductor detectors is being investigated. There is a need for detectors which will identify very high energy particles. The various types of spark chambers are briefly reviewed, including narrow gap, wide gap and filmless chambers. Applications of scintillation detectors are discussed, together with remarks on light pipes, localization of particles by time-of-flight, use of multiparameter pulse height analysis, hodoscopes and on-line computers. The use of Cerenkov counters is summarized. Several new types of detectors are considered which may be suitable for identification of particles of very high energy, hundreds of BeV, including transition radiation detectors and semiconductor devices.     

一种可测低能γ和X射线的高纯n型硅探测器

采用蒸发金、钯和离子注入硼作势垒接触,低温扩散锂制备欧姆接触的方法,制成性能良好的低能γ和X射线高纯硅探测器。介绍其制作方法和性能。探测器有效面积为14.5mm~2,厚度3.3mm。在液氮温度下对~(55)Fe 5.9kev X射线的最佳能量分辨率为162eV,对~(241)Am59.5keV低能γ射线的最佳能量分辨率为373eV。同时对三种不同制作方法所得的高纯硅探测器和Si(Li)X射线探测器进行了对比。     

低强度脉冲射线测量中的统计起伏分析

分析了闪烁探测器在低强度脉冲γ射线测量中的统计起伏现象,指出探测器输出信号的涨落不仅与达到测点的γ射线注量率、时间分布、空间分布、能量分布的统计性有关,而且还与射线和探测器的作用、能量沉积、荧光光子发射和传输、荧光光子与光阴极作用、光电子和打拿级的作用等随机事件的统计特性有关。详细推导了统计起伏的计算公式,并给出了3种型号的闪烁体与9815B型光电倍增管组成的闪烁探测器在给定测量下限时的统计起伏计算值。     

同轴HPGe探测器的全能峰效率测量及效率曲线斜率的经验公式

采用~(60)Co和~(152)Eu放射源,测定了灵敏体积为31.6,118.0和221.0cm~8的同轴HPGe探测器的全能峰绝对效率与121.8—1408keV能区内γ射线的能量关系,并用最小二乘法对效率曲线进行了较好的拟合。在极大的灵敏体积范围内,验证了锗探测器效率曲线斜率与其灵敏体积关系的经验公式:S=alogV+b,采用本公式可在小于3％的相对误差范围内,对已知灵敏体积的同轴HPGe探测器的全能峰效率随γ射线能量的变化作出估价。     

闪烁体-光纤组合式辐射探测器γ相对灵敏度研究

根据光纤光导的耦合理论,推导了闪烁体-光纤组合式探测器γ灵敏度理论公式,计算了LSO、 ST401两种闪烁体-光纤探测器的相对灵敏度,在平均能量为1.25 MeV的60Co射线源上测得10 mm厚LSO闪烁体-光纤组合式探测器的灵敏度是相同厚度ST401的19倍,理论计算和实验结果在不确定度范围内一致.     

Studies on effective atomic numbers and electron densities in different solid state track detectors in the energy range 1 keV–100 GeV

The total mass attenuation coefficients, effective atomic numbers and electron densities of different types of solid state track detectors have been calculated for total and partial photon interactions in the wide energy range of 1 keV–100 GeV using WinXCom program. The values of these parameters have been found to vary with photon energy and chemical composition of the detectors. The variations of these parameters with energy are shown graphically for all photon interactions. The results of this work can stimulate research for other detectors and different materials.     

Wafer-Bonded Silicon Gamma-Ray Detectors

A wafer-bonded silicon power transistor has been shown to function as an x-ray detector. The device consists of two thin device wafers bonded onto either side of a 2 mm-thick high-resistivity silicon wafer. The hydrophobic bonding process was performed at 400deg C. This low temperature wafer bonding technique should enable the development of large-area, position-sensitive detectors, using thick, high-resistivity intrinsic silicon bonded to thin readout wafers fabricated using conventional CMOS technology. These devices should enable fabrication of thicker intrinsic silicon detectors than currently available. Thick, position-sensitive detectors based on double-sided strip detectors and pixellated detectors are possible. To demonstrate this, a 1 mm thick gamma-ray detector was created from two 0.5 mm thick wafers that were patterned with gamma-ray strip detectors. The energy resolution of the detector is 8.9 keV FWHM for 60 keV gamma rays at room temperature with a leakage of 0.9 nA while operating at 700 V and fully depleted. Improvements in the technique should allow for thicker detectors with better energy resolution.     

Comparisons of dosimetric properties between GD-300 series of radiophotoluminescent glass detector: and GR-200 series of thermoluminescent detectors

In order to compare the dosimetric properties of two kinds of solid state detectors used for monitoring external exposures,experiments Were performed for the GD-300 series of radiophotoluminescent glass detectors (RPLGD) and the GR-200 series of thermoluminescent detectors (TLD).X-rays and 137 Cs and 60 Co γ-rays were used to irradiate the RPLGDs and TLDs,their dose linearky,uniformity/reproducibility of signal,fading effect and energy dependence were compared.Both kinds of the detectors have generally good dosimetric properties.The dose linearity and energy dependence of the GD-351 dosimeters and the TLDs are nearly the same,but the RPLGD is much better than the TLD in terms of the uniformity and fading effect.     

High Purity Germanium Radiation Detectors

The fabrication and characterization of high purity germanium radiation detectors are described. These detectors are n-i-p diodes with a shallow (1.5?) diffused junction and a noninjecting metal-semiconductor contact. The germanium has a net acceptor concentration of approximately 7 × 1011 cm-3 and contamination during processing was prevented by using clean procedures and a KCN treatment. Electrical measurements show that with 500 volts of bias these detectors are fully depleted and have a capacitance of approximately 4.5 pf. Detection characteristics are determined from measurements of ?-rays and x-rays over the energy range of 6 keV to 136 keV. A deviation from linearity of less than ± 0.2 percent was measured. The resolution of the detectors is characterized by an effective Fano factor of 0.12. The average energy expended per created pair was determined to be 2.95 ±0.02 eV at 90°K.