Analysis of illumination-intensity-dependent j–V characteristics of ZnO/CdS/CuGaSe2 single crystal solar cells

Current–voltage characteristics of ZnO/CdS/CuGaSe₂ single crystal solar cells measured at room temperature are investigated depending on illumination intensity. The characteristics can be described using the two-diode model, indicating two current transport mechanisms acting in the cells. The first and dominant mechanism is recombination of carriers at the interface between CdS and CuGaSe₂. The second one is recombination in the depletion region, which has been found to have a small effect on the solar cell photovoltaic performance. Both the diode ideality factor and the saturation current density of the dominant diode increase under illumination. A model based on interface recombination can explain these results. This model allows the estimation of diffusion voltage, capture cross-section of holes at the interface and mobility of electrons in the CdS layer.     

Blue-photon modification of nonstandard diode barrier in CuInSe2 solar cells

The current–voltage curves of many ZnO/CdS/CuInSe₂ solar cells display significant distortion when only red light illumination is employed. This distortion generally disappears or partially disappears for a period of time following illumination with blue light. Similarly, the dark diode curve shortly after illumination containing blue light is shifted significantly from the equilibrium dark curve. This effect is more common than generally realized and indicates a mechanism that is potentially detrimental to photovoltaic efficiency. A model is presented that is based on a low free-electron concentration and a high concentration of deep levels in the CdS window layer. This model is consistent with observed variations in current–voltage, capacitance, and laser scan data with illumination wavelength and history.     

Electrical and photovoltaic properties of Cr/Si Schottky diodes

The electrical properties of the Cr/p-Si(111) and Cr/n-Si(100) junctions were investigated through capacitance–voltage and current–voltage measurements, performed under dark and light conditions at room temperature. Diode parameters of Cr/Si Schottky diode like ideality factor and barrier height were obtained and variations of them were monitored as a function of temperatures. Also, an attempt to explore the governing current flow mechanism was tried. The reverse biased I–V measurement under illumination exhibited anomalous behavior as well as high photosensitivity. The former was explained in terms of minority carrier injection phenomenon. The photovoltaic parameters, such as open circuit voltage and short circuit current were obtained as 370 mV and I_sc = 44.5 μA, respectively.     

Fill factor losses in ZnO/CdS/CuGaSe2 single-crystal solar cells

Current–voltage characteristics of ZnO/CdS/CuGaSe₂ single-crystal solar cells with solar conversion efficiency values of η=3.5%, 6.0%, 6.7% and 9.7% were analyzed using the single diode equation. The effect of each of the achieved parameters on the fill factor was calculated. The calculations revealed that the fill factor reduction due to the series resistance remained below Δff=4.4% under illumination, while this effect would have been much higher if the illumination had not reduced the series resistance markedly. The calculation furthermore revealed that the fill factor reduction due to the shunt resistance remained below Δff=3.6% under illumination. This effect would have been negligible if the illumination had not also reduced the shunt resistance in all studied cells. The increase of the saturation current density under illumination has brought about considerably high fill factor losses (at least Δff=8.3%) in all studied cells. Already the dark saturation current density and the diode ideality factor in such cells have been found to be much higher than the ones in the cells based on CuInSe₂. This seems to be the most substantial restriction to the fill factor, and thus to the performance, of solar cells based on CuGaSe₂. An explanation for this different behavior seems to lie in the different band structures of these cells.     

Fabrication and characterization of 4-tricyanovinyl-N,N-diethylaniline/p-silicon hybrid organic–inorganic solar cells

Hybrid organic–inorganic solar cell was fabricated by thin film of 4-tricyanovinyl-N,N-diethylaniline deposited on p-Si substrates. The capacitance–voltage characteristics indicated that the junction is of abrupt nature. The dark forward current density-voltage characteristics indicated a tunneling conduction at relatively low voltages followed by a space-charge-limited-conduction mechanism at relatively high voltages. Under illumination, the cell exhibits photovoltaic characteristics with an open-circuit voltage of 0.70 V, a short-circuit current density of 9.15 mA cm⁻², and a power conversion efficiency of 3.10%. The effect of γ-rays irradiation (100 kGy absorbed dose) on the characteristics of the cell was also investigated. The fill factor and the power conversion efficiency decrease by 20.9% and 39% of the original value, respectively.     

A two-dimensional finite element model of front surface current flow in cells under non-uniform, concentrated illumination

A two-dimensional finite element model of current flow in the front surface of a PV cell is presented. In order to validate this model we perform an experimental test. Later, particular attention is paid to the effects of non-uniform illumination in the finger direction which is typical in a linear concentrator system. Fill factor, open circuit voltage and efficiency are shown to decrease with increasing degree of non-uniform illumination. It is shown that these detrimental effects can be mitigated significantly by reoptimization of the number of front surface metallization fingers to suit the degree of non-uniformity. The behavior of current flow in the front surface of a cell operating at open circuit voltage under non-uniform illumination is discussed in detail.     

The stability of MIS solar cells and evaluation by C–V characteristics

To test the stability of MIS solar cell structures, we investigated the I–V and C–V characteristics during tests under illumination and dark conditions. The MIS solar cells were prepared using two different techniques to produce two types of oxide layer. Under illumination, the tested devices suffer from degradation. The rate of degradation was higher for cells with a thinner oxide layer. The cells with a thicker oxide layer exhibited a partial recovery for the open circuit voltage after storage in the dark. The degradation is due to the photo-neutralization of effective charges at the oxide–semiconductor interface. This mechanism leads to instability in the cell performance through changes in the barrier height. The C–V measurement confirms this result.     

Nondestructive diagnostics of solar cells in modules and batteries by means of modulated optical beam-induced photovoltaic signal

An alternative signal appearing at the photovoltaic module output under chopped illumination has been shown to have an information allowing to recover both dark and illuminated I–V characteristics of the individual cells, provided the module circuit is in the Galvanostatic mode. The important cell parameters such as voltage drop, open circuit voltage, short circuit current and ideality factor are evaluated experimentally without the disassembly of the module. The approach may be useful for the control of the quality of cells in the already encapsulated or single-substrate integrated modules.     

GaAs/Ge solar cell AC parameters under illumination

The ac parameters of GaAs/Ge solar cell were measured under illumination at different cell temperatures using impedance spectroscopy technique. They are compared with the dark measurements. It is found that the cell capacitance is higher and cell resistance is lower under illumination than in dark for all cell terminal voltages. The cell capacitances at the corresponding maximum power point voltage (terminal) do not vary with temperature where as the cell resistance decreases. The cell capacitance under illumination is estimated from the dark cell capacitance and it is in good agreement with the measured illumination data.     

Photoelectrochemical water splitting at nanostructured α-Fe2O3 electrodes

In this study, nanostructured α-Fe₂O₃ thin films were deposited by simple electrodeposition for photoelectrochemical water splitting. Post-annealing temperature was found to have drastic effect on photoactivity of these films. SEM analysis illustrated that size of nanoparticles increases with annealing temperature. The current–potential characteristics showed that the water-splitting photocurrent strongly depends on post-annealing temperature. A maximum photocurrent density of 0.67 mA/cm² was observed at 1.23 V versus reversible hydrogen electrode (RHE) under standard illumination conditions (AM 1.5 G 100 mW/cm²), and the water-splitting current was over 1.0 mA/cm² before the dark current flow starts (at 1.55 V versus RHE). The electrode shows an onset potential as low as 0.8 V (versus RHE) for water photooxidation, which is one of the best results reported for hematite photoanodes. This high photoactivity of electrodes is attributed to the preferential growth of hematite nanostructures along the most conductive plane (001) and incorporation of Sn in film from the substrate at high annealing temperature. The best-performing electrode shows an incident photon conversion efficiency (IPCE) of 12% at 400 nm (in 1 M NaOH at 1.23 V versus RHE), which indicate the improved light-harvesting properties of these nanostructures.     

Temperature dependence of photocurrent components on enhanced performance GaAs/AlGaAs multiple quantum well solar cells

The performance of Al_0.36Ga_0.64As p/i/n solar cells with multiple quantum wells (MQW) of GaAs/Al_0.36Ga_0.64As in the i-region has been investigated at various temperatures, ranging from −10°C to 100°C, and compared with that of conventional solar cells composed of either the quantum well material (GaAs) or the barrier material (Al_0.36Ga_0.64As) alone. The dark currents of the MQW cells were found to lie between those of the conventional cells. The increase of dark current with temperature was accompanied by a slight decrease of the diode ideality factor. A linear dependence of open-circuit voltage (V_oc) on temperature was observed for all cells when illuminated with a 100W halogen lamp. V_oc for the MQW cells was found to be independent of the number of wells, lying between the V_oc's for the two conventional cells. The MQW cells exhibited performance improvement with temperature when compared to the conventional cells and there was a significant enhancement in the short-circuit current with temperature of those MQW cells that exhibited poorer performance at lower temperatures. Theoretical calculations have quantified the contribution of the tunneling current component to the total observed photocurrent at the various temperatures examined. It was found that tunneling currents are present at all temperatures and can be the dominant component in MQW cells of thinner wells at low temperatures. These results suggest that GaAs/Al_0.36Ga_0.64As MQW structures, of good-quality material, when processed as conventional solar cells with antireflective coatings should deliver more output power under intense illumination than conventional solar cells composed of the quantum well material alone.     

Effect of interface recombination on solar cell parameters

A model is presented for p–n hetero-junction solar cells in which interface recombination is the dominant diode current transport mechanism. The model explains the large diode ideality factor (n>2) and the increased saturation current density in terms of increased density of interface states N_ir. Furthermore, the model allows us to explain the non-translation between illuminated and dark J–V characteristics. The explanation is based on the assumption that, for high interface state density values, both the depletion layer width and the diffusion voltage in the p- and n-side of the junction are functions of N_ir. The interface recombination leads to lower values of the open-circuit voltage, short-circuit current density, and fill factor. These results are illustrated by numerical calculations of solar cell parameters and compared with experimental data achieved for ZnO/CdS/CuGaSe₂ single-crystal solar cells.     

Photoelectrochemical solar energy conversion based on blend of poly(3-hexylthiophene) and fullerene

A solid-state photoelectrochemical solar energy conversion device based on blend of poly(3-hexylthiophene) (P3HT) and fullerene (C₆₀) has been constructed and characterized. The photoelectrochemical performance parameters of the device were compared with pure P3HT solid-state photoelectrochemical cell. The current–voltage characteristics in the dark and under white light illumination and photocurrent spectra for front- and backside illuminations have been studied. The following device parameters were obtained: an open-circuit voltage of 97.8 mV and a short-circuit current of 7.28 μA/cm² at light intensity of 100 mW/cm²; IPCE% of 0.43% for front side illumination (ITO/PEDOT) and IPCE% of 0.01% for backside illumination (ITO/P3HT:C₆₀). The dependence of the short-circuit current and an open-circuit voltage on the light intensity and time have also been studied.     

Solid-state photoelectrochemical device based on poly(3-hexylthiophene) and an ion conducting polymer electrolyte, amorphous poly(ethylene oxide) complexed with I3/I redox couple

The photoelectrochemical properties of a solid-state photoelectrochemical cell (PEC) based on poly(3-hexylthiophene), P3HT, and an ion-conducting polymer electrolyte, amorphous poly(ethylene oxide), POMOE, complexed with I₃⁻/I⁻ redox couple has been constructed and studied. The current–voltage characteristics in the dark and under white light illumination, transient photocurrent and photovoltage studies, photocurrent action spectra for front and back side illuminations and an open-circuit voltage and short-circuit current dependence on light intensity have been studied. An open-circuit voltage of 130 mV and a short-circuit current of 0.47 μA cm⁻² were obtained at light intensity of 100 mW/cm². IPCE% of 0.024% for front side illumination (ITO/PEDOT) and IPCE% of 0.003% for backside illumination (ITO/P3HT) were obtained.     

Lateral current effects on the voltage distribution in the emitter of solar cells under concentrated sunlight

The design of the grid contact in silicon solar cells is one of the most important steps for the optimization and fabrication of these energy conversion devices. The voltage drop due to the lateral flow of current towards the grid fingers can be a limiting factor causing the reduction of conversion efficiency. For low current levels this voltage drop can be made small, for typical values of sheet resistance in the emitter, but for solar cells made to operate at high sun concentrations this efficiency loss can be important, unless there is a clear vision of the current and voltage distribution so that the emitter and grid design can be improved. Hence, it is important to establish and solve the current and voltage distribution equations for solar cells with a grid contact. In this work, first these equations are established and then they are solved in order to show the effects that the lateral current flow in the emitter cause on the voltage distribution, particularly at high illumination levels. In addition, it will be shown that the open circuit voltage is significantly reduced due to the lateral current flow as compared to the value predicted from a simple equivalent circuit with a lumped resistance model.     

Photodiodes based on graphene oxide–silicon junctions

Schottky barrier diode based on graphene oxide (GO) with the structure of Al/GO/n-Si/Al was fabricated. The current–voltage characteristics of the diode were investigated under dark and various light intensity. It was observed that generated photocurrent of the diode depends on light intensity. Various junction parameters were presented using I–V characteristics. The transient photocurrent measurement indicated that the Al/GO/n-Si/Al diode was very sensitive to illumination. The photocurrent of the diode increases with increase in illumination intensity. The capacitance–voltage–frequency (C–V–f) measurements indicated that the capacitance of the diode depends on voltage and frequency. The capacitance decreases with increasing frequency due to a continuous distribution of the interface states. These results suggest that the Al/GO/n-Si/Al diode can be utilized as a photosensor.     

Temperature-dependent properties of organic-on-inorganic Ag/p-CuPc/n-GaAs/Ag photoelectric cell

A thin organic film of copper phthalocynanine (CuPc) as p-type semiconductor was deposited by vacuum evaporation on n-type GaAs single-crystal semiconductor substrate. Electrical, photoelectrical and frequency response of the cells were investigated at a temperature interval of 23–74 °C. Photoelectric characteristics were measured under semiconductor laser beam injection illumination (), while frequency response was investigated by laser beam modulated with a frequency range of 10 Hz–100 kHz.It was observed that cell parameters such as rectification ratio; threshold voltage; nonlinearity coefficient; junction, shunt and series resistances; diode ideality factor and power conversion efficiency were temperature-dependent. Moreover, experimental data showed that open-circuit voltage decreases with an increase in frequency whereas short-circuit AC current falls with frequency but remains constant as a function of temperature. It was further observed that the short-circuit DC current remained constant with an increase in frequency as well as temperature. Based on the experimental data an equivalent circuit of photoelectric cell was proposed to explain the observed behavior.     

8 MeV electron irradiation studies on electrical characteristics of Cu(In,Ga)Se2 solar cells

Cu(In,Ga)Se₂ (CIGS) solar cells are gaining considerable interest due to their high optical absorption coefficient and adjustable band gap, which enables them to achieve high conversion efficiency and also present many promising applications in space power systems. In this paper we report the results of the effect of temperature and 8 MeV electron irradiation on the electrical characteristics of ZnO/CdS/Cu(In,Ga)Se₂/Mo polycrystalline thin-film solar cells under forward and reverse bias studied in the temperature range 270-315 K. The solar cells were subjected to 8 MeV electron irradiation from the Microtron accelerator and were exposed to graded doses of electrons up to 75 kGy. I-V characteristics of the cells under dark and AM 1.5 illumination condition were studied before and after the irradiation. Capacitance measurements were also carried out at various frequencies before and after irradiation. In the measured temperature range, the dark current contribution is due to the generation-recombination of the minority carriers in the depletion region. The ideality factor is found to decrease with increase in temperature. It seems that electron irradiation has not altered the dark current conduction mechanism significantly. The effect of electron irradiation on the solar cell parameters such as fill factor (FF), conversion efficiency (η), saturation current (I_o), short circuit current (I_sc), open circuit voltage (V_oc), and ideality factor (n) was studied. They were found to be stable up to 75 kGy of electron dose as only small changes were observed in the solar cell parameters.