Structural,optical and microscopic properties of chemically deposited Mo<Subscript>0.5</Subscript>W<Subscript>0.5</Subscript>Se<Subscript>2</Subscript> thin films

Mo_0.5W_0.5Se₂ thin films were obtained by using relative simple chemical route at room temperature. Various preparative conditions of the thin films are outlined. The films were characterized by X-ray diffraction, scanning electron microscope, optical and electrical properties. The grown films were found to be uniform, well adherent to substrate and brown in color. The X-ray diffraction pattern shows that thin films have a hexagonal phase. Optical properties show a direct band gap nature with band gap energy 1.44 eV and having specific electrical conductivity in the order of 10⁻⁵ (Ωcm)⁻¹.     

Electrical and crystallographic properties of nanocrystalline CdSe<Subscript>0.5</Subscript>S<Subscript>0.5</Subscript> composite thin films deposited by dip method

A dip method is employed for the deposition of CdSe_0.5S_0.5 composite thin film at room temperature. Cadmium sulphate, thiourea and sodium selenosulphate were used as the basic source material. Solid solution with cubic phase was observed from X-ray diffraction studies. The specific conductivity of the film was found to be in order of 10⁻⁷ (Ωcm)⁻¹. The temperature dependence of an electrical conductivity, thermoelectrical power, carrier density and carrier mobility for CdSe_0.5S_0.5 thin films have been examined. The low temperature conductivity is governed by a variable range of conduction while grain boundary limited conduction mechanism is predominant at higher temperature.     

Structural and surface morphological properties of chemically deposited Mo<Subscript>0.5</Subscript>W<Subscript>0.5</Subscript>S<Subscript>2</Subscript> thin film

Preparation of layered type semiconductor Mo_0.5W_0.5S₂ ⁻ thin films has been successfully done by using chemical bath deposition method. Objective of the studies are related to structural, optical, morphological and electrical properties of the thin films. The preparation method is based on the reaction between tartarate complex of Mo and W with thiourea in an aqueous alkaline medium at 363 K. X-Ray diffraction reveals a polycrystalline film composed of both MoS₂ and WS₂ phases. The optical study shows that the band gap of the film is 1.6 eV. Electrical conductivity is high which is in the order of 10⁻³–10⁻² (Ώ cm)⁻¹.     

Effect of oxygen partial pressure on the electrical and optical properties of highly (200) oriented p-type Ni<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>O films by DC sputtering

Thin films of NiO (bunsenite) with (200) preferential orientation were synthesized on glass substrates by direct current sputtering technique in Ar+O₂ atmosphere. Nanostructural properties of the NiO films were investigated by X-ray diffraction and also by atomic force microscopic (AFM) studies. Electrical and optical properties of the deposited films were investigated as a function of different partial pressure of oxygen in the sputtering gas mixture during deposition. The films showed p-type electrical conduction and the conductivity depends on the partial pressure of oxygen. The electrical conductivity (σ_RT) was found to be .0615 S cm⁻¹ for films deposited with 100% O₂ and its value sharply decreased with the decrease the partial pressure of O₂; for example σ_RT for 50% O₂ was 6.139 × 10⁻⁵ S cm^-1. The mechanism of the origin of p-type electrical conductivity in the NiO film is discussed from the viewpoint of nickel or oxygen vacancies, which generate holes and electrons respectively. X-ray photoelectron spectroscopic studies supported the above argument. Corresponding optical properties showed that the transparency decreases with increasing oxygen partial pressure and the bandgap also decreases.     

Optical band gap of Sn<Subscript>0.2</Subscript>Bi<Subscript>1.8</Subscript>Te<Subscript>3</Subscript> thin films

Sn_0.2Bi_1.8Te₃ thin films were grown using the thermal evaporation technique on a (001) face of NaCl crystal as a substrate at room temperature. The optical absorption was measured in the wave number range 500–4000 cm⁻¹. From the optical absorption data the band gap was evaluated and studied as a function of film thickness and deposition temperature. The data indicate absorption through direct interband transition with a band gap of around 0.216 eV. The detailed results are reported here.     

Optical properties of CeO<Subscript>2</Subscript> thin films

Cerium oxide (CeO₂) thin films have been prepared by electron beam evaporation technique onto glass substrate at a pressure of about 6 × 10⁻⁶ Torr. The thickness of CeO₂ films ranges from 140–180 nm. The optical properties of cerium oxide films are studied in the wavelength range of 200–850 nm. The film is highly transparent in the visible region. It is also observed that the film has low reflectance in the ultra-violet region. The optical band gap of the film is determined and is found to decrease with the increase of film thickness. The values of absorption coefficient, extinction coefficient, refractive index, dielectric constant, phase angle and loss angle have been calculated from the optical measurements. The X-ray diffraction of the film showed that the film is crystalline in nature. The crystallite size of CeO₂ films have been evaluated and found to be small. The experimental d-values of the film agreed closely with the standard values.     

Synthesis and optical properties of CeO<Subscript>2</Subscript> nanocrystalline films grown by pulsed electron beam deposition

The nanocrystalline cerium dioxide (CeO₂) thin films were deposited on soda lime (SLG) and Corning glass by pulsed e-beam deposition (PED) method at room temperature. The structure of the produced CeO₂ thin films was investigated by X-ray diffraction (XRD) analysis, X-ray photoelectron spectroscopy (XPS), and micro Raman spectroscopy. The surface topography of the films was examined by atomic force microscopy (AFM). Film thickness and growth morphologies were determined with FEG-SEM from the fracture cross sections. XPS studies gave a film composition composed of +4 and +3 valent cerium typical to nanocrystalline ceria structures deficient in oxygen. The ceria films were polycrystalline in nature with a lattice parameter (a) of 0.542 nm. The Raman characteristics of the source material and the films deposited were very similar in character. Raman lines for thin film and bulk CeO₂ was observed at 465 cm⁻¹. The optical properties of the CeO₂ films were deduced from reflectance and transmittance measurements at room temperature. From the optical model, the refractive index was determined as 1.8–2.7 in the photon energy interval from 3.5 to 1.25 eV. The optical indirect band gap (E _g) of CeO₂ nanocrystalline films was calculated as 2.58 eV.     

Characterization of spray deposited CoWO<Subscript>4</Subscript> thin films for photovoltaic electrochemical studies

Preparation of Cobalt tungstate (CoWO₄) thin film by spray pyrolysis with ammonical solution as a precursor is presented. The phase and surface morphology characterizations have been carried out by XRD and SEM analysis. The study of optical absorption spectrum in the wavelength range 350 – 850 nm shows direct as well as indirect optical transitions in the thin film material. The d. c. electrical conductivity measurements in the temperature range 310–500 K indicate semiconducting behavior of the thin film. The thin films deposited on fluorine doped tin oxide (FTO) coated conducting glass substrates were used as a photoanode in photovoltaic electrochemical (PVEC) cell with configuration: CoWO₄ | Ce⁴⁺, Ce³⁺ | Pt; 0.1 M in 0.1 N H₂SO₄. The PVEC characterization reveals the fill factor and power conversion efficiency to be 0.36 and 0.62%, respectively. The flat band potential is found to be −0.18 V (SCE).     

Chemical synthesis and characterization of hydrous tin oxide (SnO<Subscript><Emphasis Type="Bold">2</Emphasis></Subscript>:H<Subscript><Emphasis Type="Bold">2</Emphasis></Subscript>O) thin films

In the present investigation, we report chemical synthesis of hydrous tin oxide (SnO ₂ :H ₂ O) thin films by successive ionic layer adsorption and reaction (SILAR) method at room temperature ( \thicksim \thicksim 300 K). The films are characterized for their structural and surface morphological properties. The formation of nanocrystalline SnO ₂ with porous and agglomerated particle morphology is revealed from X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies, respectively. The Fourier transform infrared spectroscopy (FTIR) study confirmed the formation of Sn–O phase and hydrous nature of the deposited film. Static water contact angle studies showed the hydrophilic nature of SnO ₂ :H ₂ O thin film. Electrical resistivity showed the semiconducting behaviour with room temperature electrical resistivity of 10 ⁵  W\boldsymbol\Omega cm. The electrochemical properties studied in 0·5 M Na ₂ SO ₄ electrolyte showed a specific capacitance of 25 F g ^− 1 at 5 mVs ^− 1 scan rate.     

Fabrication,dielectric and ferroelectric properties of Ba<Subscript>0.6</Subscript>Sr<Subscript>0.4</Subscript>TiO<Subscript>3</Subscript> film with preferred orientation

Ba_0.6Sr_0.4TiO₃ films were fabricated by RF magnetron sputtering method. The X-ray diffraction (XRD) showed that the preferred orientation of films growing on platinum Si substrates can be tailored by sputtering pressure. The processing parameters such as sputtering pressure and substrate temperature were optimized to obtain a developed perovskite film with (110) preferred orientation. The polarization hysteresis loops and permittivity–voltage curves of the (110)-oriented film have been investigated,which demonstrated that the film is in ferroelectric phase at room temperature. Besides, it had excellent fatigue properties without polarization reduction after about 10¹⁰ switch cycles, and showed low leakage current (10⁻⁹–10⁻⁷ A/cm²) within an applied voltage of 5 V. Finally, the leakage current mechanism was studied.     

Electrical and optical properties of InSbSe<Subscript>3</Subscript> amorphous thin films

Electrical conductivity, I–V characteristics and optical properties are investigated for InSbSe₃ amorphous thin films of different thicknesses prepared by thermal evaporation at room temperature. The composition of both the synthesized material and thin films were checked by energy dispersive X-ray spectroscopy (EDX). X-ray analysis indicated that all samples under investigation have amorphous structure. The dc electrical conductivity was measured in the temperature range (303–393 K) and thickness range (149–691 nm). The activation energy ΔE _σ was found to be independent of film thickness in the investigated range. The obtained I–V characteristic curves for the investigated samples are typical for memory switches. The switching voltage increases linearly with film thickness in the range (113–750 nm), while it decreases exponentially with temperature in the range (303–393 K). The switching process can be explained according to an electrothermal process initiated by Joule-heating of the current channel. Measurements of transmittance and reflectance in the spectral range (400–2,500 nm) are used to calculate optical constants (refractive index n and absorption index k). Both n and k are practically independent of film thickness in the investigated range (149–691 nm). By analysis of the refractive index n the high frequency dielectric constant ε_∞ was determined via two procedures and was found to have the values of 9.3 and 9.15. Beyond the absorption edge, the absorption is due to allowed indirect transitions with energy gap of 1.46 eV independent on film thickness in the investigated range.     

Optimization of Cu<Subscript>2</Subscript>ZnSnS<Subscript>4</Subscript> thin film absorber layer growth without sulphurization using triethanolamine as complexing agent for thin film solar cells applications

Quaternary kesterite Cu₂ZnSnS₄ (CZTS) thin films have been prepared via a simple spin-coating technique based on a sol–gel precursor of 2-methoxyethanol solution with metal salts and thiourea. Solution processed CZTS thin film growth parameters using complexing agent triethanolamine (TEA) have been investigated. Effects of complexing agent TEA on structural, morphological, optical, electrical and photovoltaic properties of CZTS thin films were systematically investigated. X-ray diffraction and Raman spectroscopy studies reveal that amorphous nature of CZTS thin film changes into polycrystalline with kesterite crystal structure with optimized TEA concentartion. Surface morphology of CZTS films were analyzed by field emission scanning electron microscope and atomic force microscope, which revealed the smooth, uniform, homogeneous and densely packed grains and systematic grain growth formation with varying TEA concentrations. UV–Vis spectra revealed a direct energy band gap ranging from 1.78 to 1.50 eV, which was found to depend upon the TEA concentration. X-ray photoelectron spectroscopy demonstrated stoichiometric atomic ratios of multicationic quaternary CZTS thin film grown without sulphurization. p-type conductivity was confirmed using Hall measurements and the effect of varying concentartion of TEA on electrical and photovoltaic properties are studied. The SLG/FTO/ZnO/CZTS/Al thin film solar cell is fabricated with the CZTS absorber layer grown at optimized TAE concentration of 0.06 M. It shows a power conversion efficiency of 0.87% for a 0.16 cm² area with V_oc = 0.257 mV, J_sc = 8.95 mA/cm² and FF?=?38%.     

Electrical behavior of Y-doped Ba<Subscript>0.6</Subscript>Sr<Subscript>0.4</Subscript>TiO<Subscript>3</Subscript> thin films

Ba_0.6Sr_0.4TiO₃ (BST) and 1.5 at% Y-doped Ba_0.6Sr_0.4TiO₃ (Y-BST) thin films have been deposited on single-crystal (100) oriented LaAlO₃ substrates using pulsed-laser deposition technique (PLD), respectively. X-ray diffraction (XRD) scanning revealed that the two kinds of films could be epitaxially grown in pure single-oriented perovskite phases, but Y-BST thin films showed an enhanced crystallization effect. The dielectric properties of the pure and Y-BST thin films were measured at 10 kHz and 300 K with a parallel-plate capacitor configuration. The results revealed that the addition of Y as an acceptor doping is very effective to increase dielectric tunability, and to reduce leakage current of BST thin films. The figure-of-merit (FOM) factor value increases from 17.32 for BST to 25.84 for Y-BST under an applied electric field of 300 kV/cm. The leakage current density of the BST thin films at a negative bias field of 300 kV/cm decreases from 2.45 × 10⁻⁴ A/cm² to 1.55 × 10⁻⁶ A/cm² by Y doping. The obtained results indicated that the Y-doped BST thin film is a promising candidate material for tunable microwave devices.     

Characterization of Cd1−x Zn x Se thin films deposited at low temperature by chemical route

Optoelectronic technologically important pseudo-binary Cd_1−x Zn _x Se thin films with a variable composition (0 < x < 1) has been developed by chemical bath deposition method. The objective to study growth kinetics, physical, microscopic, compositional, optical, electrical and structural changes. Cd_1−x Zn _x Se have been deposited on non-conducting glass substrate in tartarate bath containing Cd⁺² and Zn⁺² ions with sodium selenosulphate with an aqueous alkaline medium at 278 K. The quality and the thickness of the films are depends upon deposition temperature, deposition time and pH, etc. X-ray diffraction (XRD), atomic absorption spectroscopy, optical absorption, scanning electron microscopy and thermoelectric technique characterized the films. The XRD study indicates the polycrystalline nature in single cubic phase over whole range of composition. Analysis of absorption spectra gave direct type band gap, the magnitude of which increases non-linearly as zinc content in the film is increased and dc electrical conductivity at room temperature was found to decreases from 10⁻⁷ to 10⁻⁸ (Ω cm)⁻¹. All the films show n-type conductivity. The promising features observed are the formation of continuous solid solutions in a single cubic phase.     

Optical,structural and electrical investigations on PbTe<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> alloys

The fabrication of devices with lead salts and their alloys with detecting and lasing capabilities has been an important technological development. The high quality polycrystalline thin films of PbTe_1−x S _x with variable composition (0 ≤ x ≤ 1) have been deposited onto ultra clean glass substrates by vacuum evaporation technique. Optical, structural and electrical properties of PbTe_1−x S _x thin films have been examined. Absorption coefficient and band gap of the films were determined by absorbance measurements in wavelength range 2,500–5,000 nm using FTIR spectrophotometer. Sample nature, crystal structure and lattice parameter of the films were determined from X-ray diffraction patterns. DC conductivity and activation energy of the films were measured in temperature range 300–380 K through I–V measurements.     

Deposition and optoelectronic properties of ITO (In<Subscript>2</Subscript>O<Subscript>3</Subscript>:Sn) thin films by Jet nebulizer spray (JNS) pyrolysis technique

Nanocrystalline ITO thin films were deposited on glass substrates by a new spray pyrolysis route, Jet nebulizer spray (JNS) pyrolysis technique, for the first time at different substrate temperatures varying from 350 to 450 °C using a precursor containing indium and tin solution with 90:10 at% concentration. The structural, optical and electrical properties have been investigated as a function of temperature. X-ray diffraction analysis showed that the deposited films were well crystallized and polycrystalline with cubic structure having (222) preferred orientation. The optical band gap values calculated from the transmittance spectra of all the ITO films showed a blue shift of the absorbance edge from 3.60 to 3.76 eV revealing the presence of nanocrystalline particles. AFM analysis showed uniform surface morphology with very low surface roughness values. XPS results showed the formation of ITO films with In³⁺ and Sn⁴⁺ states. TEM results showed the nanocrystalline nature with grain size about 12-15 nm and SAED pattern confirmed cubic structure of the ITO films. The electrical parameters like the resistivity, mobility and carrier concentration are found as 1.82 × 10⁻³ Ω cm, 8.94 cm²/Vs and 4.72 × 10²⁰ cm⁻³, respectively for ITO film deposited at 400 °C. These results show that the ITO films, prepared using the new JNS pyrolysis technique, have the device quality optoelectronic properties when deposited under the proposed conditions at 400 °C.     

The effect of post-annealing under CdCl<Subscript>2</Subscript> atmosphere on the properties of ITO thin films deposited by DC magnetron sputtering

Indium tin oxide (ITO) films deposited by DC magnetron sputtering were annealed under CdCl₂ atmosphere at different temperatures. The effects of CdCl₂ heat-treatment on the structural, electrical and optical properties of the films were investigated. The X-ray diffraction measurement proves the annealing results in a change of preferred orientation from (400) to (222). It is found the resistivity increases from 1.49 × 10⁻⁴ Ω cm of the as-deposited film to 6.82 × 10⁻⁴ Ω cm of the film annealed at 420 °C. The optical energy gap for the film varies from 3.97 to 3.89 eV. It is also found that the CdCl₂ heat-treatment results in narrowing the energy gap of ITO film.     

Structural,optical, and electrical properties of flash-evaporated copper indium diselenide thin films

Copper indium diselenide (CuInSe₂) compound was synthesized by reacting its elemental components, i.e., copper, indium, and selenium, in stoichiometric proportions (i.e., 1:1:2 with 5% excess selenium) in an evacuated quartz ampoule. Structural and compositional characterization of synthesized pulverized material confirms the polycrystalline nature of tetragonal phase and stoichiometry. CuInSe₂ thin films were deposited on soda lime glass substrates kept at different temperatures (300–573 K) using flash evaporation technique. The effect of substrate temperature on structural, morphological, optical, and electrical properties of CuInSe₂ thin films were investigated using X-ray diffraction analysis (XRD), atomic force microscopy (AFM), optical measurements (transmission and reflection), and Hall effect characterization techniques. XRD analysis revealed that CuInSe₂ thin films deposited above 473 K exhibit (112) preferred orientation of grains. Transmission and reflectance measurements analysis suggests that CuInSe₂ thin films deposited at different substrate temperatures have high absorption coefficient (~10⁴ cm⁻¹) and optical energy band gap in the range 0.93–1.02 eV. Results of electrical characterization showed that CuInSe₂ thin films deposited at different substrate temperatures have p-type conductivity and hole mobility value in the range 19–136 cm²/Vs. Variation of energy band gap and resistivity of CuInSe₂ thin films deposited at 523 K with thickness was also studied. The temperature dependence of electrical conductivity measurements showed that CuInSe₂ film deposited at 523 K has an activation energy of ~30 meV.     

Linear and nonlinear optical properties of RF sputtered (Pb,La)(Zr,Ti)O<Subscript>3</Subscript> ferroelectric thin films

Linear and nonlinear optical properties of (Pb,La)(Zr,Ti)O₃ (PLZT) ferroelectric thin films were presented in this paper. The PLZT ferroelectric thin films have been in situ grown on quartz substrates by radio-frequency (RF) magnetron sputtering at 650 °C. Their crystalline structure and surface morphologies were examined by X-ray diffraction and atomic force microscopy, respectively. It can be found that the PLZT thin films exhibit well-crystallized perovskite structure and good surface morphology. The fundamental optical constants (the band gap energy, linear refractive index, and linear absorption coefficient) were obtained through the optical transmittance measurements. A Z-scan technique was used to investigate the optical nonlinearity of the PLZT thin films on quartz substrates. The films display the strong third-order nonlinear optical effect. A large and negative nonlinear refractive index n ₂ is determined to be 1.21 × 10⁻⁶ esu for the PLZT thin films. All results show that the PLZT ferroelectric thin films have potential applications in optical limiting, switching, and modulated-type optical devices.     

Effect of Al doping and deposition runs on structural and optical properties of In<Subscript>2</Subscript>S<Subscript>3</Subscript> thin films grown by CBD

β-In_2−x Al _x S₃ thin films have been grown on glass substrate by chemical bath deposition for different value of Al concentration y = (([Al])/([In]))_sol (0 ≤ y ≤ 5 at.%). Samples have been characterized using X-ray diffraction, atomic force microscopy and by spectrophotometric measurements. The influence of the increase of y ratio in the structural and optical properties are described and discussed in terms of crystallinity improvement. In order to increase film thickness of β-In_2−x Al _x S₃, we have been realized multi-deposition system. The structural, the surface morphology as well as the optical properties seem to be improved as the film thickness is of about 1200 nm.