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1.
G. Jäger-Waldau H. -U. Habermeier G. Zwicker E. Bucher 《Journal of Electronic Materials》1994,23(4):363-367
Reactive ion etching and reactive ion beam etching are common tools for anisotropic etch processes in silicon microdevice
fabrication; but, unfortunately, they also create radiation damage in the etched surface. We have studied the electrically
active defects by measuring the recombination of carriers with the help of the electron beam induced current (EBIC) mode of
a secondary electron microscope. We have measured the temperature behavior of the samples by annealing studies and the temperature
dependent EBIC signal for several p-doped silicon wafers and obtained different shaped curves. Theoretical EBIC models developed
with the assumption of a reduced net carrier concentration in the etched areas agree with our experimental results. 相似文献
2.
L. M. Ephrath 《Journal of Electronic Materials》1978,7(3):415-428
Silicon and silicon dioxide have been Reactive Ion Etched in a CF4 plasma using a diode sputtering configuration to achieve etching. Pressures ranged from 20 to 100 millitorr and power densities
to the RF cathode were between 0.1 and 1.0 W/cm2. The effect of cathode material on the quality of etched surfaces and on etch rates has been investigated. It has been observed
that the etch rate of silicon decreases as the area of silicon exposed to the plasma is increased and that this silicon loading
effect is strongly influenced by the material covering the balance of the cathode. For instance, the silicon loading effect
is much more pronounced when silicon dioxide rather than aluminum is used to cover the balance of the cathode. This silicon
loading effect was investigated further by varying RF power. It was found that loading a silicon dioxide covered cathode with
silicon wafers decreases the dependence of silicon etch rate on power. The silicon dioxide etch rate and its dependence on
RF power are the same whether silicon, silicon dioxide or aluminum is used to cover the balance of the cathode. Possible explanations
for these experimental results will be discussed. 相似文献
3.
In this paper, we report the reactive ion etching (RIE) of trenches in 6H-silicon carbide using SF6/O2. The plasma parameters: etchant composition, gas flow rate, chamber pressure, and radio frequency power were optimized to obtain a maximum etch rate of 360Å/min. The etch rate of SiC was found to exhibit a direct correlation with the dc self bias except when the O2 percentage was varied. Trenches were fabricated using the optimized conditions. It was found that the trench surface was extremely rough due to the aluminum micromasking effect. To overcome this effect, a TeflonTM sheet was used to cover the cathode during the experiment. The trenches fabricated using this modification were found to have smooth etched surfaces and sidewalls. The angle of anisotropy of these trenches was approximately 80° which is suitable for device applications. 相似文献
4.
InSb阵列探测芯片的感应耦合等离子反应刻蚀研究 总被引:1,自引:1,他引:0
利用感应耦合等离子(ICP)反应刻蚀(RIE)进行了InSb阵列芯片台面刻蚀,并利用轮廓仪、SEM及XRD对台面形貌以及刻蚀损伤进行分析。采用优化的ICP刻蚀参数,实现的刻蚀速率为70~90 nm/min,刻蚀台阶垂直度~80°,刻蚀表面平整光滑、损伤低。与常规的湿法腐蚀相比,明显降低了侧向钻蚀。台面采用此反应刻蚀工艺,制备了具有理想I-V特性的320×256 InSb探测阵列芯片,在-500 mV到零偏压范围内,光敏元(面积23 μm×23 μm)的动态阻抗(Rd)大于100 MΩ。 相似文献
5.
Two reactive ion etchants, CF4 and SF6, have been compared in terms of plasma characteristics, silicon oxide etch characteristics, extent of RIE damage, and formation
of barrier layers on a GaAs surface after oxide etch. It was found that higher etch rates with lower plasma-induced dc bias
can be achieved with SF6 plasma relative to CF4 plasma and that this correlates with higher atomic fluorine concentration in SF6 plasma. RIE damage, measured by loss of sheet conductance in a thin highly-doped GaAs layer, could be modelled as a region
of deep acceptors at a high concentration in the conductive layer. By relating the sheet conductance change to the modelled
damaged layer thickness, it was found that the RIE-damaged thickness from both CF4 and SF6 plasmas had the same linear relation to plasma dc bias. Barriers to subsequent GaAs RIE were created during oxide overetch
at the GaAs surface. The barriers were identified by XPS as ∼20 A of GaF3 for CF4 plasma and ∼30 A of GaF3 on top of AsxSy for SF6 plasma. Ellipsometry was used to routinely determine the presence or absence of the barriers which could be removed in dilute
ammonia. 相似文献
6.
Reactive ion etching(RIE) of LiNbO3(LN) in SF6 plasma atmosphere was studied for optimizing the preparation conditions for LN ridge waveguides.The samples to be etched are Ti-diffused LN slab waveguides overlaid with a chromium film mask that has a Mach-Zehnder interferometer(MZI) array pattern.The experimental results indicate that the LN-etching rate(RLN) and the Cr-etching rate(RCr) as well as the rate ratio RLN/RCr increase with either increasing the radio-frequency(RF) power at a given SF6 flow rate or increasing the SF6 flow rate at a fixed RF power.The maximum values of RLN = 43.2 nm/min and RLN/RCr = 3.27 were achieved with 300 W RF power and 40 sccm SF6 flow.When the SF6 flow rate exceeds 40 sccm,an increase in the flow rate causes the etching rates and the rate ratio to decrease.The scanning electron microscope images of the LN ridge prepared after~20 min etching show that the ridge height is 680 nm and the sidewall slope angle is about 60°. 相似文献
7.
8.
J. L. Benton J. Michel L. C. Kimerling B. E. Weir R. A. Gottscho 《Journal of Electronic Materials》1991,20(9):643-647
Reactive ion etching (RIE) of silicon creates interstitial defects in the near surface region which diffuse into the bulk material and are trapped at substitutional carbon sites. Photoluminescence (PL), current-voltage (I–V), and Rutherford backscattering (RBS) measurements show that silicon etched in a CF4 + 8%O2 or SF6 + 8%O2 plasma consists of two distinct regions, adisplacement damage region extending 1000Å from the surface and apoint defect reaction region which can extend to depths > 1 μm. The size of the point defect reaction region is determined by diffusion limited trapping of the interstitial silicon generated during the RIE resulting in the formation ofC i - Oi orC s -Ci defect pairs. The long range diffusion rate of the interstitial defects is enhanced by the plasma during the RIE processing, and by a recombination enhanced reaction path. 相似文献
9.
S. Agarwala M. Tong D. G. Ballegeer K. Nummila A. A. Ketterson I. Adesida 《Journal of Electronic Materials》1993,22(4):375-381
The effects of selective reactive ion etching (SRIE) using SiCl4/SiF4 plasma on delta-doped GaAs/Al0.3Ga0.7As modulation-doped field-effect transistor (MODFET) structures and devices have been investigated. The results are compared
with those of corresponding conventionally doped MODFETs. Hall measurements were conducted at 300 and 77 K to characterize
the change in the transport properties of the two-dimensional electron gas due to low energy ion bombardment during the SRIE
process. Delta-doped structures showed a smaller change in sheet carrier density and mobility compared to conventionally doped
structures. Direct current and high frequency measurements were performed on the SRIE gate-recessed MODFETs. No significant
change in threshold voltage was observed for the delta-doped MODFETs in contrast to an increase of about 300 mV for the conventionally
doped MODFETs processed at a plasma self-bias voltage of −90 V and a 1200% overetch time. Maximum dc extrinsic transconductance
and unity current gain cutoff frequency did not change with SRIE processing for either of the structures.
This paper was presented at the Electronic Materials Conference at MIT, Cambridge, 1992. 相似文献
10.
Chang WuFarida Bendriaa François BrunelleVincent Senez 《Microelectronic Engineering》2011,88(8):1878-1883
The purpose of this work is to describe an original process that has been designed for the fabrication of a microfluidic converter. The fabrication is based on deep reactive ion etching of silicon and low temperature full wafer adhesive bonding. The technology development includes an improvement of the bonding process in order to produce an adaptive strength of SU-8 bond which not only ensures absence of debonding failures during the silicon deep etching procedure and the subsequent dicing procedure, but also avoids the potential SU-8 overflow leakage into channels due to the bonding step. Besides, the originality of the work is not only in the process but also in the design of the device. Common actuation method for microfluidic system is either based on closed-channel continuous-flow microfluidic (CMF) or droplet-based microfluidic (DMF). Both of them have advantages and disadvantages, and their integration on a single system is in dire need. In this paper, we briefly discuss the concept of microfluidic converter, integrating CMF with DMF, which can: (i) continuously preload reagents, (ii) independently manipulate several droplets, (iii) recombine and export samples into closed-channel continuous flow, making it ideal for interfacing to liquid-handling instruments and micro-analytical instruments. 相似文献
11.
Reactive ion etching (RIE) was performed on gallium nitride (GaN) films grown by electron cyclotron resonance (ECR) plasma
assisted molecular beam epitaxy (MBE). Etching was carried out using trifluoromethane (CHF3) and chloropentafluoroethane (C2ClF5) plasmas with Ar gas. A conventional rf plasma discharge RIE system without ECR or Ar ion gun was used. The effects of chamber
pressure, plasma power, and gas flow rate on the etch rates were investigated. The etch rate increased linearly with the ratio
of plasma power to chamber pressure. The etching rate varied between 60 and 500Å/min, with plasma power of 100 to 500W, chamber
pressure of 60 to 300 mTorr, and gas flow rate of 20 to 50 seem. Single crystalline GaN films on sapphire showed a slightly
lower etch rate than domain-structured GaN films on GaAs. The surface morphology quality after etching was examined by atomic
force microscopy and scanning electron microscopy. 相似文献
12.
E. L. Hu D. M. Tennant R. E. Howard L. D. Jackel P. Grabbe 《Journal of Electronic Materials》1982,11(5):883-888
A high resolution, tri-level e-beam resist process has been developed which has produced, by liftoff, planar metal features
as fine as 25 nm wide by 5 Μm long on thick Si substrates. The metal features have been used as masks for transfer of the
pattern into the substrate itself, producing arrays of Si membranes, 50 nm wide, 0.3 pm high and extending 5 Μm in length.
We compare the resolution of the tri-level system with that obtained for a previously reported bi-level system of similar
composition. 相似文献
13.
Neutron activation analysis has been used to study the type and level of contamination of silicon and oxidized silicon wafers
exposed to various plasmas used in silicon device processing. Silicon wafers exposed to plasmas in a reactor previously used
to remove SiN passivation layers from Au metallized wafers were found to be heavily contaminated with Au (up to ∼1014 atoms/cm2). Au contamination of oxidized silicon wafers similarly treated was two to three orders of magnitude smaller regardless of
whether SiO2 etched faster or slower than Si in the plasmas used. Wet chemical cleaning of contaminated Si subsequent to plasma exposure
was relatively ineffective in removing residual Au. This is interpreted as indicating indiffusion of Au during plasma exposure
of Si. Exposure to a polymer forming plasma reduced the level of Au contamination of Si by nearly two orders of magnitude
due to effective “sealing” of reactor surfaces by polymer film. Further, the level of contamination of Si was observed to
decrease by over two orders of magnitude with usage time of the reactor during a 300-day time period when no Au containing
materials were introduced into the reactor. 相似文献
14.
M.A.R. Alves 《Microelectronics Journal》2005,36(1):51-54
We developed a process to obtain sharper silicon tips by employing anisotropic etching in a KOH solution followed by SF6 plasma etch. The tips were further sharpened using the established thermal oxidation technique to decrease the cone angle and, therefore, obtain smaller curvature radii. We have analyzed the impact of such changes in geometry on a figure of merit associated with the field emission characteristics. An increase in the figure of merit by a factor of three was found in relation to the tips before sharpening. 相似文献
15.
16.
C. R. Eddy C. A. Hoffman J. R. Meyer E. A. Dobisz 《Journal of Electronic Materials》1993,22(8):1055-1060
It has been recently reported (J.R. Meyer, F.J. Bartoli, C.A. Hoffman, and L.R. Ram-Mohan,Phys. Rev. Lett. 64, 1963 [1990]) that novel electronic and optical effects are anticipated in nanometer scale features of narrow band gap
semiconductors such as mercury cadmium telluride (MCT). These efforts could lead to the creation of non-linear optical switches,
high efficiency infrared lasers, and unique nanoelectronic devices. This work reports on the first realization of MCT nanostructures
through the application of e-beam lithography and reactive ion etching with an electron cyclotron resonance (ECR) microwave
plasma source. It is shown that the low energy ions produced by an ECR system can etch MCT with good selectivity over an e-beam
resist mask and with high resolution. Using these fabrication methods, 40–70 nm features with aspect ratios of 3–5∶1 and sidewall
angles greater than 88° have been demonstrated. Qualitative investigations of some of the etch mechanisms of this technique
are made, and results suggest a desorption limited process.
*Code 6675,†Code 5613,‡Code 6864 相似文献
17.
B. Viallet J. Grisolia M.A.F. Van Den Boogaart T. Lebraud 《Microelectronic Engineering》2008,85(8):1705-1708
Stencil-assisted oxygen reactive ion etching is a low-cost and parallel process for the replication of micrometric and nanometric patterns in any organic material. This lithography process allows the patterning of organic material non sensitive to electronic or optical radiations, sensitive to solvents, or already patterned which cannot be patterned by conventional lithography methods. We demonstrate the versatility of stencil-assisted reactive ion etching though 3 examples. First to define 500 nm holes in PMMA. Secondly, the fabrication step has been integrated in a lift-off process of metal or molecular self-assembled monolayers. We finally apply stencil-assisted reactive ion etching to pattern an assembly of 100 nm latex nanoparticles. 相似文献
18.
对HBr反应离子刻蚀硅和SiO2进行了实验研究。介绍了HBr等离子体的刻蚀特性,讨论了HBr反应离子刻蚀硅的刻蚀机理,研究了HBr中微量氧、碳对HBrRIE刻蚀过程的影响。实验表明,HBr是一种刻蚀硅深槽理想的含原子溴反应气体。采用HBrRIE,可获得高选择比(对Si/SiO2)和良好的各向异性。 相似文献
19.
S. Guilet C. Perez-MartinezP. Jegou P. LozanoJ. Gierak 《Microelectronic Engineering》2011,88(8):1968-1971
In this article the authors report on ionic liquid ion sources (ILISs) for silicon reactive machining and direct microfabrication of silicon structures. The authors have developed a specific source geometry using the ionic liquid EMI-BF4 to obtain stable emission currents up to the 10 μA regime. ILIS EMI-BF4 engraving properties were then investigated in low and high current regime showing very different etching characteristics. The results and the chemical analysis of the patterned substrates suggest that reactive ion species can be generated from ILIS. This possibility is of major interest to allow decisive advances in the field of focused ion beam applications. 相似文献
20.
R. Pal P. K. Chaudhury B. L. Sharma V. Kumar C. Musca J. M. Dell L. Faraone 《Journal of Electronic Materials》2004,33(2):141-145
Two-dimensional, midwavelength infrared (MWIR) HgCdTe detector arrays have been fabricated using reactive ion etching (RIE).
Detector-to-detector uniformity has been studied in the devices fabricated with CdTe- and ZnS-passivation layers. Mapping
of the doping profile, passivant/HgCdTe interface electrical properties, and diode impedance-area product (R0Aj) in a two-dimensional array of diodes has been carried out. Temperature and perimeter/area dependence of the dark current
are studied to identify the bulk and surface current components. Maximum R0Aj=2×107 Θcm2 was achieved in CdTe-passivated, 200×200 μm2 diode arrays. It demonstrates that CdTe-passivated, RIE-processed HgCdTe is a feasible technology. 相似文献