SHORT COMMUNICATION: ACCELERATED PUBLICATION: Diode characteristics in state‐of‐the‐art ZnO/CdS/Cu(In1−xGax)Se2 solar cells

We report a new state of the art in thin‐film polycrystalline Cu(In,Ga)Se₂‐based solar cells with the attainment of energy conversion efficiencies of 19·5%. An analysis of the performance of Cu(In,Ga)Se₂ solar cells in terms of some absorber properties and other derived diode parameters is presented. The analysis reveals that the highest‐performance cells can be associated with absorber bandgap values of ∼1·14 eV, resulting in devices with the lowest values of diode saturation current density (∼3×10⁻⁸ mA/cm²) and diode quality factors in the range 1·30 < A < 1·35. The data presented also support arguments of a reduced space charge region recombination as the reason for the improvement in the performance of such devices. In addition, a discussion is presented regarding the dependence of performance on energy bandgap, with an emphasis on wide‐bandgap Cu(In,Ga)Se₂ materials and views toward improving efficiency to > 1;20% in thin‐film polycrystalline Cu(In,Ga)Se₂ solar cells. Published in 2005 John Wiley & Sons, Ltd.     

InGaP/GaAs‐based multijunction solar cells

The conversion efficiency of InGaP/(In)GaAs/Ge ‐based multijunction solar cells has been improved up to 29–30% (AM0) and 31–32% (AM1·5G) by technologies, such as double‐hetero wide band‐gap tunnel junctions, combination with Ge bottom cell with the InGaP first hetero‐growth layer, and precise lattice‐matching to Ge substrate by adding 1% indium to the conventional GaAs lattice‐match structure. Employing a 1·95 eV AlInGaP top cell should improve efficiency further. For space use, radiation resistance has been improved by technologies such as introducing of an electric field in the base layer of the lowest‐resistance middle cell, and EOL current matching of sub‐cells to the highest‐resistance top cell. A grid structure and cell size have been designed for concentrator applications in order to reduce the energy loss due to series resistance, and 38% (AM1·5G, 100–500 suns) efficiency has been demonstrated. Furthermore, thin‐film structure which is InGaP/GaAs dual junction cell on metal film has been newly developed. The thin‐film cell demonstrated high flexibility, lightweight, high efficiency of over 25% (AM0) and high radiation resistance. Copyright © 2005 John Wiley & Sons, Ltd.     

Development of Nano‐TiO2 dye sensitised solar cells on high mobility transparent conducting oxide thin films

The optical transmission of dye‐sensitised solar cells (DSCs) can be tuned by altering the dye and/or particle size of the mesoporous TiO₂ layers, to allow their application as the top device in tandem solar cells. To benefit from this semi‐transparency, parasitic optical losses by the transparent electrodes must be minimised. This work investigates the influence of using two different transparent conductors, namely, the high mobility material titanium doped indium oxide (ITiO) and fluorine doped tin oxide (FTO) as electrodes for semi‐transparent DSCs. The overall NIR transparency through the DSCs increased significantly as each FTO electrode was replaced by an ITiO electrode. This increase was from 20–45% in the 1300–700 nm wavelength range for fully FTO‐based cells, to about 60% for fully ITiO‐based cells, across the same spectrum. DSCs prepared on these electrodes exhibited short circuit currents ranging from 14·0–14·9 mA/cm². The conversion efficiency of the cell with ITiO as both the front and rear electrodes was 5·8%, which though significant, was lower than the 8·2% attained by the cell using FTO electrodes, as a result of a lower fill factor. Improvements in the ITiO thermal stability and in the processing of the TiO₂ interfacial layer are expected to improve the cell efficiency of such single DSC devices. The high current density and optical transparency of ITiO‐based DSCs make them an interesting option for tandem solar cells. Copyright © 2008 John Wiley & Sons, Ltd.     

Progression of metalorganic chemical vapour‐deposited CdTe thin‐film PV devices towards modules

This paper reports important developments achieved with CdTe thin‐film photovoltaic devices produced using metalorganic chemical vapour deposition at atmospheric pressure. In particular, attention was paid to understand the enhancements in solar cell conversion efficiency, to develop the cell design, and assess scalability towards modules. Improvements in the device performance were achieved by optimising the high‐transparency window layer (Cd_0.3Zn_0.7S) and a device‐activation anneal. These increased the fill factor and open‐circuit voltage to 77 ± 1% and 785 ± 7 mV, respectively, compared with 69 ± 3% and 710 ± 10 mV for previous baseline devices with no anneal and thicker Cd_0.3Zn_0.7S. The enhancement in these parameters is associated with the two fold to three fold increase in the net acceptor density of CdTe upon air annealing and a decrease in the back contact barrier height from 0.24 ± 0.01 to 0.16 ± 0.02 eV. The optimum thickness of the window layer for maximum photocurrent was 150 nm. The cell size was scaled from 0.25 to 2 cm² in order to assess its impact on the device series resistance and fill factor. Finally, micro‐module devices utilising series‐connected 2‐cm² sub‐cells were fabricated using a combination of laser and mechanical scribing techniques. An initial module‐to‐cell efficiency ratio of 0.9 was demonstrated for a six‐cell module with the use of the improved device structure and processing. Prospects for CdTe photovoltaic modules grown by metalorganic chemical vapour deposition are commented on. Copyright © 2015 John Wiley & Sons, Ltd.     

Progress toward 20% efficiency in Cu(In,Ga)Se2 polycrystalline thin‐film solar cells

This short communication reports on achieving 18·8% total‐area conversion efficiency for a ZnO/CdS/Cu(In,Ga)Se₂/Mo polycrystalline thin‐film solar cell. We also report a 15%‐efficient, Cd‐free device fabricated via physical vapor deposition methods. The Cd‐free cell includes no buffer layer, and it is fabricated by direct deposition of ZnO on the Cu(In,Ga)Se₂ thin‐film absorber. Both results have been measured at the National Renewable Energy Laboratory under standard reporting conditions (1000 W/m², 25°C, ASTM E 892 Global). The 18·8% conversion efficiency represents a new record for such devices (Notable Exceptions) and makes the 20% performance level by thin‐film polycrystalline materials much closer to reality. We allude to the enhancement in performance of such cells as compared to previous record cells, and we discuss possible and realistic routes to enhance the performance toward the 20% efficiency level. Published in 1999 by John Wiley & Sons, Ltd. This article is a US government work and is in the public domain in the United States.     

A thin‐film silicon solar cell and module

We have developed a new light‐trapping scheme for a thin‐film Si stacked module (Si HYBRID PULS module), where a (a‐Si:H/transparent interlayer/microcrystalline Si) thin‐film was integrated into a large‐area solar cell module. An initial aperture efficiency of 13·1% has been achieved for a 910 × 455 mm Si HYBRID PLUS module, which was independently confirmed by AIST. This is the first report of the independently confirmed efficiency of a large‐area thin‐film Si module with an interlayer. The 19% increase of short‐circuit current of this module was obtained by the introduction of a transparent interlayer that caused internal light‐trapping. A mini‐module was shown to exhibit a stabilized efficiency of 12%. Outdoor performance of a Si HYBRID (a‐Si:H / micro‐crystalline Si stacked) solar cell module has been investigated for over 4 years with two different kinds of module (top and bottom cell limited, respectively). The HYBRID modules limited by the top cell have exhibited a more efficient performance than the modules limited by the bottom cell, in natural sunlight at noon. Copyright © 2005 John Wiley & Sons, Ltd.     

CdTe solar cell in a novel configuration

Polycrystalline thin‐film CdTe/CdS solar cells have been developed in a configuration in which a transparent conducting layer of indium tin oxide (ITO) has been used for the first time as a back electrical contact on p‐CdTe. Solar cells of 7·9% efficiency were developed on SnO_x:F‐coated glass substrates with a low‐temperature (<450°C) high‐vacuum evaporation method. After the CdCl₂ annealing treatment of the CdTe/CdS stack, a bromine methanol solution was used for etching the CdTe surface prior to the ITO deposition. The unique features of this solar cell with both front and back contacts being transparent and conducting are that the cell can be illuminated from either or both sides simultaneously like a ‘bi‐facial’ cell, and it can be used in tandem solar cells. The solar cells with transparent conducting oxide back contact show long‐term stable performance under accelerated test conditions. Copyright © 2004 John Wiley & Sons, Ltd.     

Perovskite‐Based Tandem Solar Cells: Get the Most Out of the Sun

Tandem solar cells (TSCs) comprising stacked narrow‐bandgap and wide‐bandgap subcells are regarded as the most promising approach to break the Shockley–Queisser limit of single‐junction solar cells. As the game‐changer in the photovoltaic community, organic–inorganic hybrid perovskites became the front‐runner candidate for mating with other efficient photovoltaic technologies in the tandem configuration for higher power conversion efficiency, by virtue of their tunable and complementary bandgaps, excellent photoelectric properties, and solution processability. In this review, a perspective that critically dilates the progress of perovskite material selection and device design for perovskite‐based TSCs, including perovskite/silicon, perovskite/copper indium gallium selenide, perovskite/perovskite, perovskite/CdTe, and perovskite/GaAs are presented. Besides, all‐inorganic perovskite CsPbI₃ with high thermal stability is proposed as the top subcell in TSCs due to its suitable bandgap of ≈1.73 eV and rapidly increasing efficiency. To minimize the optical and electrical losses for high‐efficiency TSCs, the optimization of transparent electrodes, recombination layers, and the current‐matching principles are highlighted. Through big data analysis, wide‐bandgap perovskite solar cells with high open‐circuit voltage (V_oc) are in dire need in further study. In the end, opportunities and challenges to realize the commercialization of TSCs, including long‐term stability, area upscaling, and mitigation of toxicity, are also envisioned.     

Narrow‐bandgap CuIn3Te5 thin‐film solar cells

We propose CuIn₃Te₅ as a ternary semiconductor material for narrow‐bandgap thin‐film solar cells. Well‐developed CuIn₃Te₅ grains were obtained at a substrate temperature of 250 °C by single‐step co‐evaporation. The best solar cell that was fabricated using 4·0‐µm‐thick CuIn₃Te₅ layers grown at 250 °C yielded a total area efficiency of 6·92% (V_oc = 407 mV, J_sc = 33·1 mA/cm², and FF = 0·514). To clarify the loss in the device performance, the cell was compared with a standard CuInSe₂ reference cell. A band diagram of the CdS/CuIn₃Te₅ solar cell was also presented. Copyright © 2011 John Wiley & Sons, Ltd.     

High Hall Mobility P‐type Cu2SnS3‐Ga2O3 with a High Work Function

A new transparent p‐type oxide semiconductor (POS) is reported, Cu₂SnS₃‐Ga₂O₃, having high Hall mobility of 36.22 cm² V⁻¹s⁻¹, and high work function of 5.17 eV. The existence of Cu₂SnS₃ and Ga₂O₃ phases in the film is confirmed by X‐ray photoelectron spectroscopy results and the Cu₂SnS₃ shows polycrystalline structure according to Raman spectrum and X‐ray diffraction analysis. The transparent Cu₂SnS₃‐Ga₂O₃ exhibits the carrier concentration of 5.86 × 10¹⁶ cm⁻³, and electrical resistivity of 1.94 Ω·cm. The transparent POS is applied to green quantum light‐emitting diodes (QLEDs) as a hole injection layer (HIL) because of its high work function. The QLED exhibits the maximum current efficiency of 51.72 cd A⁻¹, power efficiency of 31.97 lm W⁻¹, and external quantum efficiency (EQE) of 14.93%, which are much higher than the QLED using polyethylene dioxythophene:poly(styrenesulfonate) HIL exhibiting current efficiency of 42.66 cd A⁻¹, power efficiency of 20.33 lm W⁻¹, and EQE of 12.36%. The Cu₂SnS₃‐Ga₂O₃ developed in this work can be widely used as a transparent and conductive p‐type oxide for thin‐film devices.     

High photo‐conversion efficiency in double‐graded Cu(In,Ga)(S,Se)2 thin film solar cells with two‐step sulfurization post‐treatment

Sulfur is extensively used to increase the bandgap of Cu(In,Ga)(S,Se)₂ (CIGSSe) solar cells and to improve the open circuit voltage (V_OC ) in order to optimize the characteristics of the devices. This study uses a sulfurization process to obtain a double‐graded bandgap profile. Selenization was carried out on Cu(In,Ga) precursors, followed by one sulfurization process or two consecutive sulfurization processes on top of the CIGSe absorber layer surface. The optimum two‐step sulfurization process provides an increase of V_OC of 0.05 V and an improvement of conversion efficiency of 1.17%. The efficiency of the 30 × 30 cm² monolithic module, which has 64 CIGS cells connected in series (aperture area: 878.6 cm²), is 15.85%. The optical and electrical properties of the phase and the work function distribution were investigated using the depth profiles of the absorber layer as a function of the sulfurization conditions. The CIGSSe thin film formed by two‐step sulfurization with a high sulfur concentration exhibits a single work function peak, better crystallinity, and higher conversion efficiency than those of the thin film formed by two‐step sulfurization at low sulfur concentration. In terms of the Raman spectra depth profile, the phase areas for the CIGSSe thin film that underwent the optimized high sulfur concentration two‐step‐sulfurization appeared to have less of Cu_2‐xSe phase than that with low sulfur concentration. Consequently, surface and interface phase analysis is an essential consideration to improve cell efficiency. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.     

High‐efficiency (19%) screen‐printed textured cells on low‐resistivity float‐zone silicon with high sheet‐resistance emitters

High‐efficiency 4 cm² screen‐printed (SP) textured cells were fabricated on 100 Ω/sq emitters using a rapid single‐step belt furnace firing process. The high contact quality resulted in a low series resistance of 0·79 Ωcm², high shunt resistance of 48 836 Ωcm², a low junction leakage current of 18·5 nA/cm² (n₂ = 2) yielding a high fill factor (FF) of 0·784 on 100 Ω/sq emitter. A low resistivity (0·6 Ωcm) FZ Si was used for the base to enhance the contribution of the high sheet‐resistance emitter without appreciably sacrificing the bulk lifetime. This resulted in a 19% efficient (confirmed at NREL) SP 4 cm² cell on textured FZ silicon with SP contacts and single‐layer antireflection coating. This is apparently higher in performance than any other previously reported cell using standard screen‐printing approaches (i.e., single‐step firing and grid metallization). Detailed cell characterization and device modeling were performed to extract all the important device parameters of this 19% SP Si cell and provide guidelines for achieving 20% SP Si cells. Copyright © 2005 John Wiley & Sons, Ltd.     

Properties of ZnO/CdS/CuInSe2 solar cells with improved performance

We report the growth and characterization of low‐bandgap record‐efficiency ZnO/CdS/CuInSe₂ thin‐film solar cells. The total area conversion efficiency for this cell is 14·5%. This result has been measured and confirmed at the National Renewable Energy Laboratory under standard reporting conditions (1000 W/m², 25°C, AM1·5 Global). The improved performance of the CuInSe₂ solar cell is primarily due to a high current density. Material and device characterization data are presented.. Published in 2004 by John Wiley & Sons, Ltd.     

Unusually High Optical Transmission in Ca:Ag Blend Films: High‐Performance Top Electrodes for Efficient Organic Solar Cells

Highly transparent electrodes are demonstrated based on thermally evaporated calcium:silver blend thin–films, which show unusually high transmission well above the expectations from bulk material properties and thin film optics. These electrodes exhibit a low sheet resistance of 27.3 Ω/, combined with an extraordinarily high mean transmittance of 93.0% in the visible spectral range (σ_dc/σ_opt = 186.7), superior to the commonly used inorganic electrodes made from indium tin oxide (ITO). Additionally, the metal blend electrode is flexible, showing a constant sheet resistance down to a bending radius of 10 mm and can be employed on top of organic devices without causing damage to the organic material. The spontaneously formed unique microstructure of a polycrystalline Ag network with randomly distributed nanoapertures, surrounded by a calcium shell, enables broadband transmittance enhancement due to amplified plasmonic coupling. Consequently, top‐illuminated organic solar cells using such metal blend electrodes achieve a power conversion efficiency of 7.2% (which defines a new record for top illuminated organic solar cells) and even exceed the efficiency of similar bottom‐illuminated reference solar cells (6.9%) employing common ITO electrodes.     

High-Efficiency Polycrystalline CdS/CdTe Solar Cells on Buffered Commercial TCO-Coated Glass

Multiple polycrystalline CdS/CdTe solar cells with efficiencies greater than 15% were produced on buffered, commercially available Pilkington TEC Glass at EPIR Technologies, Inc. (EPIR, Bolingbrook, IL) and verified by the National Renewable Energy Laboratory (NREL). n-CdS and p-CdTe were grown by chemical bath deposition (CBD) and close space sublimation, respectively. Samples with sputter-deposited CdS were also investigated. Initial results indicate that this is a viable dry-process alternative to CBD for production-scale processing. Published results for polycrystalline CdS/CdTe solar cells with high efficiencies are typically based on cells using research-grade transparent conducting oxides (TCOs) requiring high-temperature processing inconducive to low-cost manufacturing. EPIR’s results for cells on commercial glass were obtained by implementing a high-resistivity SnO₂ buffer layer and by optimizing the CdS window layer thickness. The high-resistivity buffer layer prevents the formation of CdTe-TCO junctions, thereby maintaining a high open-circuit voltage and fill factor, whereas using a thin CdS layer reduces absorption losses and improves the short-circuit current density. EPIR’s best device demonstrated an NREL-verified efficiency of 15.3%. The mean efficiency of hundreds of cells produced with a buffer layer between December 2010 and June 2011 is 14.4%. Quantum efficiency results are presented to demonstrate EPIR’s progress toward NREL’s best-published results.     

Optimization of CdTe thin‐film solar cell efficiency using a sputtered,oxygenated CdS window layer

A major source of loss in cadmium sulfide/cadmium telluride (CdS/CdTe) solar cells results from light absorbed in the CdS window layer, which is not converted to electrical current. This film can be made more transparent by oxygen incorporation during sputter deposition at ambient temperature. Prior to this work, this material has not produced high‐efficiency devices on tin oxide‐coated soda‐lime‐glass substrates used industrially. Numerous devices were fabricated over a variety of process conditions to produce an optimized device. Although the material does not show a consistent increase in band gap with oxygenation, absorption in this layer can be virtually eliminated over the relevant spectrum, leading to an increase in short‐circuit current. Meanwhile, fill factor is maintained, and open‐circuit voltage increases relative to baseline devices with sublimated CdS. The trend of device parameters with oxygenation and thickness is consistent with an increasing conduction band offset at the window/CdTe interface. Optimization considering both initial efficiency and stability resulted in a National Renewable Energy Laboratory verified 15.2%‐efficient cell on 3.2‐mm soda‐lime glass. This window material was shown to be compatible with SnO₂‐based transparent conducting oxide and high resistance transparent coated substrates using in‐line compatible processes. Copyright © 2015 John Wiley & Sons, Ltd     

Modeled performance of polycrystalline thin‐film tandem solar cells

The optimum bandgaps for two‐terminal monolithic multijunction devices have typically been studied under a fixed set of environmental conditions, using ideal device models. This study examines the effects of a realistic dark‐current for typical state‐of‐the‐art thin‐film polycrystalline cells on the optimum energy gap for a series‐connected two‐junction cell. The optimum energy gaps are compared for a series‐connected tandem cell under standard reference conditions and the energy produced for five different reference days where the temperature, spectral irradiance and total irradiance varied. The optimum bandgaps were found to be 1.72 ± 0.02 eV for the top cell and 1.14 ± 0.02 eV for the bottom cell. Published in 2002 by John Wiley & Sons, Ltd.     

Study on ALD In2S3/Cu(In,Ga)Se2 interface formation

The formation of the interface between In₂S₃ grown by atomic layer deposition (ALD) and co‐evaporated Cu(In,Ga)Se₂ (CIGS) has been studied by X‐ray and UV photoelectron spectroscopy. The valence band offset at 160°C ALD substrate temperature was determined as −1·2±0·2 eV for CIGS deposited on soda‐lime glass substrates and −1·4±0·2 eV when a Na barrier substrate was used. Wavelength dependent complex refractive index of In₂S₃ grown directly on glass was determined from inversion of reflectance and transmittance spectra. From these data, an indirect optical bandgap of 2·08±0·05 eV was deduced, independent of film thickness, of substrate temperature and of Na content. CIGS solar cells with ALD In₂S₃ buffer layers were fabricated. Highest device efficiency of 12·1% was obtained at a substrate temperature of 120°C. Using the bandgap obtained for In₂S₃ on glass and a 1·15±0·05 eV bandgap determined for the bulk of the CIGS absorber, the conduction band offset at the buffer interface was estimated as −0·25±0·2 eV (−0·45±0·2 eV) for Na‐containing (Na‐free) CIGS. Copyright © 2005 John Wiley & Sons, Ltd.     

Application of copper thiocyanate for high open‐circuit voltages of CdTe solar cells

Copper thiocyanate (CuSCN) has proven to be a low‐cost, efficient hole‐transporting material for the emerging organic–inorganic perovskite solar cells. Herein, we report that CuSCN can also be applied to CdTe thin‐film solar cells to achieve high open‐circuit voltages (V_OCs). By optimizing the thickness of the thermally evaporated CuSCN films, CdTe cells fabricated by close space sublimation in the superstrate configuration have achieved V_OCs as high as 872 mV, which is about 20–25 mV higher than the highest V_OC for the reference cells using the standard Cu/Au back contacts. CuSCN is a wide bandgap p‐type conductor with a conduction band higher than that of CdTe, leading to a conduction band offset that reflects electrons in CdTe, partially explaining the improved V_OCs. However, due to the low conductivity of CuSCN, CdTe cells using CuSCN/Au back contacts exhibited slightly lower fill factors than the cells using Cu/Au back contacts. With optimized CdS:O window layers, the power conversion efficiency of the best CdTe cell, using CuSCN/Au back contact, is 14.7%: slightly lower than that of the best cell (15.2%) using Cu/Au back contact. Copyright © 2015 John Wiley & Sons, Ltd.     

Focussed ion beam and field emission gun–scanning electron microscopy for the investigation of voiding and interface phenomena in thin‐film solar cells

The use of focussed ion beam milling combined with high resolution scanning electron microscopy analysis as a characterisation tool for thin‐film photovoltaics is reported. CdTe solar cell cross sections are examined in high detail with as‐grown and CdCl₂‐treated devices being compared. Observed changes in microstructure of the thin‐film layers are related to the device performance. The CdCl₂ treatment is shown to cause a reduction in the CdTe defect density at regions close to the interface and induce recrystallization of the CdS layer. Furthermore, the focussed ion beam technique is shown to reveal voids formed within the device's thin‐film layers at various processing stages that have not been previously observed in working cell structures. The back‐contacting Te‐rich layer resulting from nitric–phosphoric acid etching is also observed, with the etched layer being seen to propagate down the CdTe grain boundaries. Copyright © 2011 John Wiley & Sons, Ltd.