LCoS微型显示器的时序彩色化设计

设计了一种用单屏LCoS实现彩色VGA显示的时序彩色化方式,其占空比为1／18。并介绍了几种快速液晶材料。通过设计功耗约1．2mW的LCoS芯片,简述了采用EDA软件设计彩色LCoS芯片的方法及部分仿真结果。     

彩色硅基液晶显示芯片的研制

设计了一种适合LCoS(Liquid Crystal on Silicon）显示技术彩色化的时序彩色方式及其相应的电路结构,叙述了运用“自顶向下”的现代EDA设计方法,在Cadence平台上按照常规0.6μm的n－阱双层金属CMOS工艺研制彩色LCoS显示芯片的全过程,并给出部分电路版图。     

LCoS芯片集成参考电压源的设计

提出了一种集成LCoS芯片内的可编程多通道参考电压源的设计,简单介绍了LCoS显示系统的工作原理,给出了参考电压源部分电路的原理图、版图以及电路低功耗的实现方法。参考电压源由I2C接口电路、多通道寄存器、控制电路、多通道DAC以及多通道缓冲器组成。重点介绍了参考电压源中多通道DAC和多通道缓冲器的设计,用EDA设计工具完成了对缓冲器原理图的设计和仿真。最后用SMICCMOS工艺完成了缓冲器版图的设计以及后续的ERC、DRC和LVS检查和验证,仿真结果显示此电路系统能够完全满足LCoS显示系统的要求。     

彩色LCoS显示器设计分析(二)

本文从产品角度讨论LCoS显示芯片的功耗与面积分配等问题，提出一种新颖的低压驱动显示方法，并详细说明在Cadence平台上按照常规0.6(m的n-阱四层金属CMOS工艺研制彩色LCoS显示芯片的全过程，最后给出部分电路的仿真结果和版图。     

高性能可变增益放大器（VGA）设计探讨

可变增益放大器（VGA）是模拟电路的一个基本组成模块。它们已经在移动通信系统,硬盘驱动系统等领域得到了广泛的应用。随着深亚微米CMOS工艺的到来,集成电路的特征尺寸越来越小,电源电压逐渐降低,高性能的VGA设计向模拟电路设计师提出了严峻的挑战。鉴于此,探讨了一些高性能VGA的设计技术,对开环VGA和闭环VGA两种结构作了详细的论述,并分析了相应的增益控制方法和优缺点。最后介绍了一种用于低压低功耗设计的高性能VGA增益级电路结构,并提出了VGA各种性能参数之间的折衷设计。     

LCoS彩色时序控制器的ASIC设计

本文介绍了LCoS彩色时序控制器的原理和实现方法,采用全定制设计技术进行了该控制器电路的ASIC芯片设计,该芯片功能正确,功耗较低,可靠性强。     

投影显示用LCoS显示芯片设计

首先确定了三片式投影用硅基液晶(LCoS)显示器应具备的显示性能参数,进一步提出LCoS显示芯片器件物理结构及其电路组成框图。从芯片整体角度介绍了设计方法,详述了运用CadenceEDA工具设计LCoS显示芯片的具体策略和相应步骤,给出了LCoS显示芯片的实际设计版图。     

集成LCoS芯片内的可编程多通道参考电压产生器

在LCoS显示芯片内集成参考电压产生器有很多优点,能产生更精确的参考电压、LCOS屏接口的外围引线更少、芯片系统的整体功耗更低、可靠性更高等.提出了集成LCOS芯片内的可编程多通道参考电压产生器的设计,分析了 LCoS 显示系统中参考电压的作用,给出了部分电路的原理图、版图以及电路低功耗的实现方法.整个电路系统有I2C接口电路、多通道寄存器、控制电路、多通道 DAC 以及多通道缓冲器组成.重点介绍了参考电压产生器中多通道 DAC 和多通道缓冲器的设计,并且用EDA设计工具完成了对部分电路原理图的设计和仿真.最后用SMIC CMOS工艺完成了电路版图的设计以及后续的ERC、DRC和LVS检测和验证.最后结果显示此电路系统能够完全满足 LCoS 显示的要求.     

场序彩色LCoS智能伽玛矫正电路设计

基于数字控制的方式,设计了一种LCoS多模式智能伽玛矫正电路,可以集成到场序彩色LCoS显示芯片内,在系统CPU的控制下,能够独立编程设置RGB各子场的γ矫正曲线,并能够在系统工作过程中进行γ矫正的调节。采用了10位双电阻梯数模转换电路,具有输出电压精度高,电路结构简单,功耗低等特点。文章给出了电路的内部结构、软件流程和测试结果。测试结果表明,输出模拟电压在0～5V时,输出电压最大误差只有3mV。     

单片彩色LCoS显示系统的设计实现

单片彩色LCoS显示系统体积小,成本低,光学系统简单,易于实现小型化,应用前景广泛。对单片彩色LCoS显示系统的显示原理进行研究,并使用FPGA作为主控芯片实现该显示系统。对主控模块的设计与实现做了详细的叙述,包括主要模块的划分及其算法。由于LCoS器件的限制,所设计的单片彩色LCoS显示系统还存在一些问题,对这些问题的解决方法做了探索,提出如何提高显示质量的一些方法。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.