激光椭偏率对类镍氪系统光场感生电离参数的影响

研究了激光椭偏率对基于光场感生电离(OFI)电子碰撞机制类镍氪(NLK)系统电离参数的影响。计算结果表明,激光椭偏率对NLK系统的电离速率、电离电子剩余能、各电荷态相对集居数随时间的变化以及初始电子能量分布等电离参数的影响较大,圆偏振激光场是实现NLK 32.8 nm X射线激光放大的最佳激励光场。理论计算表明,在圆偏振飞秒激光驱动下,实现NLK 32.8 nm X射线激光放大需要的最低激光强度为3.5×1016W/cm2,最高激光强度为1.6×1017W/cm2,实验估计的激光强度可能在5×1017W/cm2以上。     

背景气压对激光蒸发金属靶产生的快电子的影响

我们对调Q激光(5×10~8W/cm~2)蒸发金属靶产生的快电子进行了实验研究。观察了背景气压对快电子信号的影响。本文对观察到的现象进行了讨论并提出产生的原因。     

大气污染物SO2的光声探测

以波长为266nm的激光为激发光源,采用脉冲光声光谱技术,用自制的光声探测装置对SO2分子的光声吸收特性进行了实验研究,获得了室温、665Pa气压的实验条件下声音在SO2气体中的传播速度.通过测量光声信号随实验条件的变化发现,光声信号强度随激光能量的增加而增大,随缓冲气体压强升高而增大,缓冲气压增加到约2.66×104Pa时出现饱和现象.在标准大气压情况下,测量了痕量SO2气体的浓度,采用这套光声探测装置,SO2气体探测灵敏度可以达到9.1×10-6.     

溴化亚铜脉冲激光研究

本文应用电子温度、电子密度实验值,通过数值求解CuBr激光能级粒子数速率方程,得到了脉冲期间随时间变化的铜原子能级粒子数和激光脉冲功率,结果表明:计算的激光脉冲与实验观测基本相符;电子温度峰值和电子温度在较高能量区的滞留时间,是决定激光行为的两个重要因素。     

P-InP欧姆接触的Nd-YAG激光合金化

本文报道用 Nd-YAG脉冲激光辐照代替热合金化制备了性能良好的 P-InP/AuSb +AuZn + Au欧姆接触.利用激光合金所获得的接触电阻率8.6× 10~(-5)~Ω·cm~2优于另一部分样品热合金化的值1.6 ×10~(-4)Ω·cm~2.其表面形貌也比热合金化的好,俄歇电子能谱分析发现在界面附近明显形成了Zn的分布峰,使电子隧穿势垒的几率增大.     

Ag_3AsS_3单晶中10.6微米讯号的上转换

报告了淡红银矿(Ag_3AsS_3)单晶中10.6微米讯号上转换实验.使用未调Q红宝石激光作泵源,在0.2千瓦/厘米~2泵光功率密度下获得的最大功率转换系数为1.6×10~(-5)(量子转换系数～1×10~(-6)).测量了位相匹配曲线及转换系数随泵光功率密度的变化曲线,最佳位相匹配角是26°30＇±10′.对实验结果进行了讨论.     

单模光纤激光准直仪的研制

本文在简要分析影响激光准直精度主要因素的基础上,介绍了单模光纤激光准直仪的原理及其软硬件设计,给出了准直仪在不同距离下的漂移实验.实验表明:研制的准直仪在20m范围内1个小时内的相对漂移值小于2×10-6.     

飞秒脉冲激光烧蚀金属的机理分析

为了深入理解超短脉冲激光烧蚀金属的机理,特别是烧蚀过程中靶面电子发射带来的影响,本文分析了飞秒脉冲激光烧蚀金属的机理,并在此基础上建立了一维热传导双温模型,模型考虑了电子热导率、热容、电子-晶格耦合系数等参数随温度的变化,以及表面热电子发射和多光子电离导致靶面的能量损失。选择波长为 800 nm,FWHM为100 fs,峰值功率密度为1.2×1017 W/m2 的高斯型单脉冲激光辐照铜靶进行数值模拟。并对计算数据进行分析,结果表明:多光子电离所导致的电子发射比热电子发射要强,但是热电子发射持续的时间长;多光子电离导致的电子发射带走的靶面能量比较大,在分析飞秒烧蚀过程中不可忽略。     

大气模式激光推进耦合系数的实验研究

为了研究大气压强对激光推进耦合系数的影响,设计了一座真空仓,利用真空泵系统控制仓内气压从4.6×103Pa到101.3×103Pa之间变化。采用单脉冲能量为20J的TEACO2激光器,对挂有光船模型的冲击摆进行大气模式激光推进耦合系数的测定。实验发现随着真空仓内气压的上升,冲量耦合系数逐渐增大,当气压值达到34.6×103Pa左右时,冲量耦合系数达到最大,随后伴同气压值的增加冲量耦合系数逐步下降。当入射激光单脉冲能量为10J时,冲量耦合系数的峰值处的气压值略有降低。从激光等离子体冲击波的角度对这一现象进行了初步的分析和解释,预测了能量对冲量耦合系数的峰值影响。     

硼离子注入硅的剖面分布

本文研究了硼离子注入硅的载流子浓度分布.实验表明,载流子浓度分布可以近似用线性扩散方程的解来描述.因此,通过结深的实验值得到了一套随注入剂量,退火温度和时间变化的扩散系数.用这套扩散系数又可以计算出能量 40-400keV,剂量5×10~(13)-1×10~(15)cm~(-2),退火温度900℃-1100℃,退火时间15分-2 小时这个范围内的载流子浓度分布.     

Dynamic time-correlated single-photon counting laser ranging

We demonstrate a photon counting laser ranging experiment with a four-channel single-photon detector (SPD). The multi-channel SPD improve the counting rate more than 4×10⁷ cps, which makes possible for the distance measurement performed even in daylight. However, the time-correlated single-photon counting (TCSPC) technique cannot distill the signal easily while the fast moving targets are submersed in the strong background. We propose a dynamic TCSPC method for fast moving targets measurement by varying coincidence window in real time. In the experiment, we prove that targets with velocity of 5 km/s can be detected according to the method, while the echo rate is 20% with the background counts of more than 1.2×10⁷ cps.     

机载激光测深光电倍增管变增益探测方法

对机载激光探测海水深度的大动态范围信号,提出了使用光电倍增管变增益探测方法来压缩其动态范围。给出了GDB333,GDB49,R1333光电倍增管增益控制特性,压缩信号动态范围达2.5×104倍,满足了机载激光测深系统的要求。使用光电倍增管变增益探测方法探测到的海底回波,也在文中进行了报道。     

The applications of the stark effect to the stabilization of the CO2 laser and the submillimeter laser

Methods based on the Stark effect are described for dither-free frequency stabilization of the optically pumped submm laser. The CO₂ pump laser was stabilized using a Stark Lamb dip signal of the submm lasant in an external Stark cell. An estimated frequency stability (Δf/f) better than ±1.4×10^?8, for one hour recording, was obtained by this method. The frequency of the submm laser was stabilized using the d.c. and a.c. Stark effects for a metal-dielectric rectangular waveguide laser. An estimated frequency stability of ±6×10^?8 was obtained for 119 μm line of CH₃OH laser for one hour recording.     

小型封离式陶瓷TEA CO2激光器的特性研究(第一部分:理论分析)

本文从理论上分析了小型TEA CO2激光器的各主要参数的选择。给出了我们研制的小型封离式陶瓷TEA CO2激光的实验结果:该器件尺寸为φ62×190mm,其基模输出能量20mJ.脉宽50ns,使用寿命106次,储存寿命大于10年。装在测距机上经一年的使用表明,性能稳定可靠。     

一种自稳频大功率单频He-Ne激光器的功率估算

介绍了一种大功率单频、自稳频、高输出功率He-Ne激光器功率估算方法的改进。用这种方法的估算值与实际输出功率值符合得较好。     

Periodic formation of transient population inversion for intersubband laser transitions in quantum wells

A method of periodic short-term inversion for intersubband laser transitions in a quantum well with a repetition frequency of ～1 GHz and inversion retention time ～1 ps is suggested. The method is based on fast population of the upper transition level as a result of resonance tunneling of charge carriers from neighboring quantum wells as the electric field applied to the heterostructure is varied. As a consequence, the peak value of the population inversion can be as large, for example, as 8 × 10¹⁰ cm^?2 for the transition corresponding to the wavelength λ ≈ 10 μm and 2 × 10¹⁰ cm^?2 in the case of λ ≈ 25 μm. This method can be implemented at room temperature, which makes it attractive for fabrication of amplifiers of picosecond pulses for the middle and far infrared optical regions and the terahertz band.     

脉冲激光扫描淀积类金刚石薄膜

采用能量密度为1.178×109W/cm2的XeCl准分子激光直接辐照高纯度的石墨靶,并同时采用辅助放电,在1×10-5Torr的真空环境中,于温度为80℃的Si(100)的基片上淀积出类金刚石薄膜,Raman光谱显示在1330cm-1处出现较强的散射峰值;对薄膜红外光谱进行测试,其光谱在2900cm-1处有吸收峰,表明所淀积的类金刚石薄膜含有C-H键,其H元素与C元素的比为45%.薄膜的电阻率为1.89×106Ω/cm,通过光吸收测得的该薄膜的能隙为1.55eV.     

XeF激光器中XeF2气体的监测

给出了一种用吸收光谱法实时监测XeF激光器中XeF2气体压强的方法,标定了XeF2气体在波长为253.7nm处的吸收截面的大小Ó2253.27XeF=(1.55±0.05)×10-19cm2.用该监测系统测量了XeF2气体与3种作为激光器气室材料的反应速率,同时研究了XeF蓝绿激光器中输出激光能量与XeF2气体压强的关系.     

Influence of laser recrystallization and hydrogen annealing on electrical characteristics of polysilicon

 Asenic ions are implanted with doses of 5×10~(11)—5×10~(15)/cm~2 into LPCVD polysilicon films on SiO_2 isolating substrate.The polysilicon films have been recrystallized with CW Ar~+ laser before implantation.Electrical measurements show that the resistivity is lowered and the mobility is increased significantly at low doping concentration(～10~(17)As~+/cm~3).Plasma hydrogen annealing is performed on laser-recrystallized samples.The electrical characteristics of plasma hydrogen annealed samples are close to that of single crystalline silicon.It is found that the resistivity decreases from 1.2 Ω.cm to 0.45 Ω.cm,the mobility rises from 62 cm~2/V.s to 271 cm~2/V.s,the electrical activation energy reduces from 0.03 eV to -0.007 eV and the trapping state density at the grain boundary drops from 3.7×10~(11)/cm~2 to 1.7×10~(11)/cm~2.Based on the existing theoretical models for conduction in polysilicon, a new formula for large grain polysilicon has been proposed,with the help of which,a good agreement between theory and experimental results is achieved within the doping concentration range from 10~(16)/cm~3 to 10~(20)/cm~3.