基体负偏压对类金刚石涂层结构和性能的影响

采用直流等离子体增强化学气相沉积技术(DC-PECVD),通过控制基体负偏压的变化在YG8硬质合金基体上制备一系列类金刚石涂层。选用扫描电子显微镜、原子力显微镜、拉曼光谱、X射线光电子能谱、粗糙度仪对涂层形貌和结构进行表征测试。同时,利用显微硬度计、划痕测试仪系统地分析涂层的显微硬度和界面结合性能。结果表明:随着负偏压增大,涂层表面形貌逐渐平整光滑、致密,颗粒尺寸减小及数量降低。拉曼光谱表明,涂层具有典型的类金刚石结构,涂层中sp3键含量呈先增大后减小趋势,最大值约67.9%出现在负偏压为1000V左右,负偏压过大导致sp3键含量降低。显微硬度随负偏压变化规律与sp3键基本相符,sp3键含量决定显微硬度值大小。负偏压过大对吸附离子产生反溅射作用导致涂层厚度减小。当负偏压为1100V时,涂层与基体间的界面结合性能最优。     

极板负偏压对类金刚石薄膜性质的影响

用射频－直流辉光放电系统制备类金刚石薄膜，研究了极板负偏压（Ｖ）对类金刚薄膜性质的影响。结果表明，类金刚石薄膜的性质明显依赖于极板负偏压，在所研究的范围（－３００－９００Ｖ）内，随Ｖ绝对值的增加，薄膜的折射率，消光系数，生长速率，及硬度增加，电阻率下降，Ｖ的变化使膜中Ｈ一及ｓｐ＾３／ｓｐ＾２的比例发生变化，从而使膜的性质发生变化。     

射频负偏压对沉积类金刚石薄膜结构和性能的影响

在不同的射频负偏压作用下,利用微波电子回旋共振(ECR)等离子体源化学气相沉积技术在单晶硅表面进行制备类金刚石薄膜研究.利用傅立叶变换红外吸收光谱(FTIR)和原子力显微镜(ARM)对薄膜的结构成分和形貌进行了分析表征,同时对所制备的薄膜摩擦系数进行了测试.结果表明:所制备的薄膜具有典型的含H类金刚石结构特征,薄膜结构致密均匀、表面粗糙度小.随着负偏压的增大,红外光谱中2800 cm-1～3000 cm-1波段的C-H伸缩振动吸收峰的强度先升高后降低,在射频功率为50 W时达到最大,所对应的薄膜摩擦系数是先降低再升高,在射频功率为50 W时达到最小.     

直流负偏压对类金刚石薄膜结构和性能的影响

利用直流-射频-等离子体增强化学气相沉积技术在单晶硅表面制备了类金刚石薄膜，采用原子力显微镜、Raman光谱、X射线光电子能谱、红外光谱、表面轮廓仪和纳米压痕仪考察了直流负偏压对类金刚石薄膜表面形貌、微观结构、沉积速率和硬度等性能的影响。结果表明：无直流负偏压条件下，薄膜呈现有机类聚合结构，具有较低的SP3含量和硬度；叠加上直流负偏压后，薄膜具有典型的类金刚石结构特征，SP3含量和硬度得到了显著的提高；但随着直流负偏压的升高，薄膜的沉积速率和H含量逐渐降低，而SP3含量和硬度在直流负偏压为200V时出现最大值，此后逐渐降低。     

CVD金刚石薄膜摩擦学性能的研究现状

化学气相沉积(Chemical vapor deposition,CVD)金刚石薄膜通常是一种表面粗糙的多晶薄膜,其摩擦系数相对于光滑金刚石明显偏高,这制约着其在摩擦学领域的应用。在综合分析近年来该领域研究的基础上,总结了CVD金刚石薄膜摩擦学性能的主要影响因素,并从降低其摩擦系数的角度出发,着重讨论了几种提高CVD金刚石薄膜摩擦性能的途径。     

PECVD法制备类金刚石薄膜的结构和摩擦学性能研究

采用射频一直流等离子体增强化学气相沉积技术在单晶硅衬底上沉积了类金刚石薄膜。用激光拉曼光谱仪和原子力显微镜对薄膜的结构和表面形貌进行了表征，并用纳米压痕仪测定了薄膜的硬度。用UMT微摩擦磨损试验机考察了薄膜在不同的滑行速度下薄膜的摩擦学性能。结果表明：所沉积的薄膜具有典型类金刚石薄膜的结构特征，薄膜表面光滑致密，硬度较高；薄膜与氧化铝陶瓷球对磨显示出良好的摩擦学性能，随着滑行速度的增加，薄膜的摩擦系数单调降低，但磨损寿命先增加后降低。     

CVD生长金刚石薄膜衬底负偏压增强成核效应

基于已经得到的实验结果的分析，本文较详细地讨论了低压化学气相沉积（ＣＶＤ）金刚石薄膜过程中，衬底负偏压对金刚石成核的增强效应，明确阐述了负偏压增强成核的作用机理，并且讨论了这种效应作为提高金刚石在非金刚石衬底表面成核密度的一种方法所具有的优点以及存在的不足。     

金刚石薄膜摩擦学性能研究进展

化学气相沉积的金刚石薄膜通常是一种表面粗糙的多晶薄膜,其摩擦系数相对于单晶金刚石明显偏高,制约着其在摩擦学领域的应用.本文介绍了近年来国内外学者为提高金刚石薄膜摩擦学性能而进行的探索研究及其发展现状.简要分析了影响金刚石薄膜摩擦学性能的主要因素,并提出金刚石薄膜应用于摩擦学领域需要重视解决的几个问题.     

偏压对MPCVD金刚石薄膜织构生长的影响

通过偏压激波等离子体化学气相沉积法（ＭＰＣＶＤ）成功地在Ｓｉ（１００）上生长出具有（１００）织构的金刚石薄膜。阐述了实验过程,讨论了偏压对（１００）织构金石薄膜成核与生长条件的影响,偏压有助于成核密度的提高和有利于（１００）织构生长,采用ＳＥＭ、Ｒａｍａｎ光谱等对所得榈进行了表征。     

掺氮类金刚石薄膜的制备与性能研究

利用空心阴极放电在玻璃基底表面沉积掺氮类金刚石(DLc)薄膜.拉曼光谱(Raman)分析表明,所制备的碳膜具有典型的类金刚石结构.扫描电镜(SEM)和原子力显微镜(AFM)分析了薄膜表面形貌和粗糙度;利用摩擦磨损仪测量膜的摩擦磨损性能.结果表明,氮的掺入使得薄膜中颗粒致密平整,改变了薄膜的表面微观形貌,进而改善了薄膜的摩擦磨损性能.     

负偏压增强金刚石膜与衬底结合强度的理论研究

由于金刚石与Si有较大的晶格失配度和表面能差,利用化学气相沉积(CVD)制备金刚石膜时,金刚石在镜面光滑的Si表面上成核率非常低.而负衬底偏压能够提高金刚石在镜面光滑的Si表面上的成核率,表明金刚石核与Si表面的结合力也得到增强.利用负偏压增强CVD系统制备金刚石膜时,气体辉光放电产生的离子对Si表面轰击,使得Si衬底表面产生了微缺陷(凹坑),增大了金刚石膜与Si衬底的结合面积.本工作主要从理论上研究离子轰击对金刚石膜与Si衬底结合力的影响.     

Structure and tribological property of MoSx-CrTiAlN film by unbalanced magnetron sputtering

MoS_x-CrTiAlN film was deposited on Mg alloy substrates using unbalanced magnetron sputtering. First of all, the CrTiAlN layer was synthesized in a gas mixture of Ar + N₂, and then the MoS_x layer on CrTiAlN were deposited by a single MoS_x target. The composition, structure and tribological property of MoS_x-CrTiAlN film were characterized by X-ray photoelectron spectrometry, X-ray diffraction, transmission electron microscopy and ball-on-disc tester. The experimental results show that crystallography structure of CrTiAlN layer is FCC whilst the MoS_x layer has a mixed microstructure with hexagonal and amorphous state. The coefficient of friction of MoS_x-CrTiAlN film is a function of load and shows a steady decreasing with the increasing in applied load.     

Effect of argon and substrate bias on diamond thin film surface morphology

Nanocrystalline materials are of high interest, because mechanical and physical properties of such materials are different from those or coarse-grained type. Continuous and smooth nanocrystalline diamond (NCD) thin films were successfully grown on mirror polished silicon substrates, using double bias plasma-enhanced hot filament chemical vapour deposition technique. A gas mixture of Ar:CH₄:H₂ and CH₄:H₂ was used as the precursor gas. The effect of the gas composition, flow rate and substrate bias during deposition on diamond crystallite size was investigated. Changing the growth parameters facilitates control of grain size of polycrystalline diamond thin films from microcrystalline to nanocrystalline. The structure of fine-grained NCD films has been studied with scanning electron microscopy and Raman spectroscopy.     

Effects of substrate bias voltage and target sputtering power on the structural and tribological properties of carbon nitride coatings

Effects of substrate bias voltage and target sputtering power on the structural and tribological properties of carbon nitride (CN_x) coatings are investigated. CN_x coatings are fabricated by a hybrid coating process with the combination of radio frequency plasma enhanced chemical vapor deposition (RF PECVD) and DC magnetron sputtering at various substrate bias voltage and target sputtering power in the order of −400 V 200 W, −400 V 100 W, −800 V 200 W, and −800 V 100 W. The deposition rate, N/C atomic ratio, and hardness of CN_x coatings as well as friction coefficient of CN_x coating sliding against AISI 52100 pin in N₂ gas stream decrease, while the residual stress of CN_x coatings increases with the increase of substrate bias voltage and the decrease of target sputtering power. The highest hardness measured under single stiffness mode of 15.0 GPa and lowest residual stress of 3.7 GPa of CN_x coatings are obtained at −400 V 200 W, whereas the lowest friction coefficient of 0.12 of CN_x coatings is achieved at −800 V 100 W. Raman and XPS analysis suggest that sp³ carbon bonding decreases and sp² carbon bonding increases with the variations in substrate bias voltage and target sputtering power. Optical images and Raman characterization of worn surfaces confirm that the friction behavior of CN_x coatings is controlled by the directly sliding between CN_x coating and steel pin. Therefore, the reduction of friction coefficient is attributed to the decrease of sp³ carbon bonding in the CN_x coating. It is concluded that substrate bias voltage and target sputtering power are effective parameters for tailoring the structural and tribological properties of CN_x coatings.     

77K基底制备的银薄膜的微观结构和光学性质

应用蒸发镀膜方法，分别在室温和液氮温度(77K)玻璃基底上制备了银薄膜样品。对两种样品的微观结构和光学性质进行了对比研究，微观结构应用X射线衍射仪、扫描电子显微镜进行分析，光学性质应用椭圆偏振光谱仪进行研究，测量的光学参数与理论计算的结果基本吻合。比较液氮温度基底上制备的银薄膜与室温基底上制备的银薄膜表面后发现：前种薄膜的表面更均匀、颗粒更小；两种薄膜的光频介电函数实部ε1基本没有差别，前种薄膜的光频介电函数虚部ε2大；前种薄膜的光学吸收增强，吸收峰发生蓝移和宽化。实验结果表明颗粒膜的光学吸收峰的位置依赖于颗粒膜中金属的介电常数和粒子尺寸。     

Structure and tribological property of MoSx-CrTiAlN film by unbalanced magnetron sputtering

MoS_x-CrTiAlN film was deposited on Mg alloy substrates using unbalanced magnetron sputtering. First of all, the CrTiAlN layer was synthesized in a gas mixture of Ar + N₂, and then the MoS_x layer on CrTiAlN were deposited by a single MoS_x target. The composition, structure and tribological property of MoS_x-CrTiAlN film were characterized by X-ray photoelectron spectrometry, X-ray diffraction, transmission electron microscopy and ball-on-disc tester. The experimental results show that crystallography structure of CrTiAlN layer is FCC whilst the MoS_x layer has a mixed microstructure with hexagonal and amorphous state. The coefficient of friction of MoS_x-CrTiAlN film is a function of load and shows a steady decreasing with the increasing in applied load.     

偏压对磁控溅射沉积Al—Zn镀层成分和结构的影响

采用扫描电镜（SEM）、X射线衍射仪、X射线能谱（EDS）和俄歇电子能谱仪（AES）,研究了基片偏压对磁控溅射沉积Al-Zn镀层组成和结构的影响。随着基片偏压的增加镀层的Zn含量呈降低趋势,在不同基片偏压下可获得不同择优取向的Al-Zn镀层。     

Influence of metal substrate properties on the kinetics of zeolite film formation

The primary stages of zeolite Y and silicalite-1 film formation on both untreated and plastically deformed copper substrates are considered from the viewpoint of the film growth kinetics and morphology. Experimental results indicate a satisfactory agreement between the kinetic and profilometric data.