Silicon Bipolar Microwave Power Transistors

This paper presents a review of the present states of commercially available silicon bipolar transistors and projects what power at frequency performance will be available in the next few years. It discusses the need for implementing certain fabrication/processing developments necessary to meet the projected power at frequency performance Ievels.     

Microwave Interference Effect in Bipolar Transistors

This work discusses the active circuit behavior of typical bipolar transistors as they are injected with low level microwave energy. The observed response is found to be due to square law rectification of the energy at the transistor's emitter-base junction. A rectification efficiency measurement'is described which gives a quantitative measure of a transistors sensitivity to microwave interference in terms of an equivalent rectified base current interference signal per unit of absorbed microwave power. Measurements show that a typical n-p-n Si planar transistor (FT = 450 MHz) has a rectification factor of approximately 0.05 mA/mW for 2 GHz microwave energy. Typically, this factor decreases at about 6 dB/octave as the interference carrier frequency is increased. A model for the rectification effect is propQsed which suggests that it is due to ac crowding and the decrease in transistor a at the edges of the emitter, in addition to the basic nonlinearity of the emitter-base junction volt-ampere characteristic.     

Development of Microwave SiGe Heterojunction Bipolar Transistors

Si Ge material of great practical value can introduce the band-engineering conceptioninto the Si process.Itprovides another importantdevice with design option and can greatlyimprove the device performance.Now the best resultreported i...     

Development of Microwave SiGe Heterojunction Bipolar Transistors

The microwave SiGe Heterojunction Bipolar Transistors (HBT) were fabricated by the material grown with home-made high vacuum/rapid thermal processing chemical vapor deposition equipment. The HBTs show good performance and industrial use value. The current gain is beyond 100;the breakdown voltage BVceo is 3.3V,and the cut-off frequency is 12.5GHz which is measured in packaged form.     

SOI横向栅控双极晶体管特性研究

横向SOI双极技术具有工艺简单、寄生电容小等优势,被认为是射频领域最有希望的技术之一。为了得到可用于射频领域的SOI横向栅控双极晶体管特性,采用一种SOI横向栅控双极晶体管器件结构,研究范围包括工艺实现过程和器件性能特性。实验表明,该器件工艺与平面CMOS工艺完全兼容,通过对栅端电压的控制,可以实现hFE在一个较大的范围内自由调节,具有更大的使用灵活性。     

提高微波功率双极晶体管性能的研究

通过对硅S波段微波功率双极晶体管的结终端技术实验数据对比和晶体管镇流电阻设计的考虑,提高了微波功率双极器件的击穿电压和电流通过能力及抗烧毁能力。微波器件采用这些技术后,器件的工作频率不但没有降低,反而从原来的S波段的低端(2.25～2.55 GHz),提高到了中高端(3.1～3.5 GHz);器件的集电结反向击穿电压50 V以上的比率由原来的17.6%提高到63.5%;器件的功率增益也从6 dB提高到7.5 dB以上,证明了该工艺方法的有效性与可行性。     

总剂量辐射对硅双极和MOS器件性能的影响

对比研究了总剂量辐射对硅微波功率双极器件、LDMOS器件、VDMOS器件以及常规功率VDMOS和抗辐射加固功率VDMOS器件电性能的影响,并分析了辐射后器件性能变化的原因,为抗辐射加固方法的改进和优化提供了基础。     

空穴注入控制型横向绝缘栅双极晶体管

提出了空穴注入控制型横向绝缘栅双极晶体管（ＣＩ－ＬＩＧＢＴ）,它可以有效地控制高压下阳极区穴穴注入,提高器件的闭锁电压。通过对阳极区反偏ｐ＾＋ｎ＾＋结 穿电压ＢＶＺ、取样电阻ＲＡ和阳极区结深的优化,提高了ＣＩ－ＬＩＧＢＴ的抗闭锁能力,降低了其导通压卫,并获得了初步实验结果。     

亚微米双层多晶硅自对准双极晶体管性能研究

本文采用亚微米工艺和自对准技术制作了发射区宽度分别为0.8μm和0.4μm的两种双层多晶硅自对准双极晶体管。其中采用的是深沟和LOCOS两种隔离联合的隔离方法;EB间自对准是通过均匀的高质量的SiNx侧墙实现的,EB结击穿电压高达4.5V;窄的发射区使得发射极多晶硅在发射区窗口严重堆积,引起了双极晶体管的电流增益增大,同时也降低了管子的速度。工艺和器件模拟显示,发射极多晶硅采用原位掺杂技术,双极晶体管的性能得到了很大的改善。     

The Comparative Performance of FET and Bipolar Transistors at VHF

The relative performance of FET and bipolar transistors 200 MHz AGC amplifiers in a TV tuner is discussed. It is concluded that both junction and insulated gate FET's have better overload capability than the bipolar transistor though they have a lower stable gain. The noise figure of the IG FET increases less rapidly with AGC than does the noise figure of the bipolar transistor. The performance of all three semiconductor devices is compared with that of a popular vacuum tube (6DS4) in its tuner.     

Design Considerations for Paralleling Bipolar Transistors

A simple design procedure for direct paralleling of bipolar junction transistors (BJT's) is proposed. It is based on the matching of transfer characteristics (Ic versus VCE) at a low collector voltage. The design procedure further addresses the base and collector circuit's layout requirements, optimal base-driven conditions, and thermal design requirements for reliable and efficient operation of BJT's in parallel. The influence of a snubber circuit is also discussed. The procedure is verified experimentally by performing dynamic and reversebias safe operating area (RBSOA) testings.     

一种提高硅双极器件频率和功率的新技术

提出了一种能同时提高硅双极器件频率和功率的新技术－具有深阱终端结构的新型梳状深阱结构技术。采用ＭＥＤＩＣＩ模拟分析表明,该技术可交双极器件的击穿电压ＢＶＣＢ０提高到平行平面结的９０％以上;可减小寄生效应和漏电流,有助于提高小电流β０;可适当的增加集电区掺杂浓度,减小τｄ,同时提高ＩＣＭ和Ｐｏ。     

改善微波功率管小电流特性的模拟分析

对于新型Ｎ＾＋ＩＰ发射结结构的微波功率管，采用一维数值模拟，分区计算了它的渡越时间，结果表明其截止频率的小电流特性可以获得明显的改善。     

性能优良的RCA微波功率晶体管

首次采用多晶硅发射区 RCA技术制备出微波功率晶体管。在工作频率为 3 .1 GHz时 ,该器件输出功率达到 6W,功率增益达到 1 0 d B。与普通多晶硅发射区 HF晶体管相比 ,此种晶体管具有电流增益 h FE随温度变化小、并且在一定温度下达到饱和的优点 ,从而可以在一定程度上抑制微波双极功率晶体管由于温度分布不均匀导致的电流集中。文中还讨论了不同的杂质激活条件对 RCA器件直流增益的温度特性的影响及对微波性能的影响     

异质结双极型晶体管的能带设计

化合物半导体的液相外延技术,特别是近年来分子束外延(MBE)和金属有机化合物化学气相渡积(MOCVD)技术的进展,为半导体新器件的发展提供了良好的工艺基础.本文分析和讨论了在上述工艺基础上双极型晶体管的能带设计.其中包括宽发射极、宽收集极和能带宽度的设计.讨论了异质发射结附近能带尖峰和基区中速度过冲之间的联系与设计要点.提出了Auger晶体管的概念以及在工艺上如何实现的具体结构.文章最后以微波低噪声双极型晶体营为例,给出了一个具体的能带设计图.     

基于Z参数的微波晶体管高频噪声网络分析方法

利用Z参数噪声网络等效电路的分析方法,得到了用器件Z参数表示的微波双极晶体管噪声参数的表达式,通过对微波低噪声双极晶体管的高频参数进行测试和分析,并把器件的网络参数和物理参数相结合,来对器件的最小噪声系数进行计算和分析.     

基于Z参数的微波晶体管高频噪声网络分析方法

For high-capacity wavelength division multiplexing(WDM) in optical fiber transmission systems, multi-wavelength light sources are needed to be operated at precisely-determined wavelength swith a fine separation of 0.8 or 1.6nm.Increasing efforts have been put into deve...     

SiGe基区异质结晶体管电流和频率特性的解析模型

给出了一个适用于分析SiGe基区异质结晶体管电流和频率特性的解析模型,并利用该模型分析了基区掺杂和组分均级变的SiGe异质结晶体管的电流增益、截止频率、最高振荡频率。模型中考虑了由于基区重掺杂和Ge的掺入引起的禁带窄变效应、载流子速度饱和效应。解析模型的计算结果与实验的对比证实了本模型可适用于器件的优化设计和电路的模拟。     

Computer Simulation of Small-Signal and Noise Behavior of Microwave Bipolar Transistors Up to 12 GHz

Computer-aided determination and optimization of lumped elements of equivalent circuits based on experimental data, application to the lumped equivalent circuit including noise sources of microwave bipolar transistors, and calculation of gain, noise, and stability from the said computer simulation are dealt with. As an example, a special microwave transistor mount and aspects of a new rugged metal-ceramic package are considered.