Digital-compatible high-performance operational amplifier withrail-to-rail input and output ranges

This paper presents a CMOS buffer amplifier which operates on a single 5-V power supply. The uniquely symmetrical design adds the following advantages: rail-to-rail linear, symmetrical operation at both the input and output; the output stage allows the use of gate channel capacitors of standard MOSFET's as the compensation capacitor saving die area from 80%~93% in a standard single polysilicon digital process; large gain-bandwidth product; high power supply rejection ratio; good common-mode rejection ratio; and easy compact layout suitable for design automation (layout as a parametric cell, allows easy adaption to changing processes). The buffer is capable of driving 300 Ω∥100 pF with a loaded gain-bandwidth product of more than 4 MHz and a fully loaded slew rate of greater than 4 V/μS     

High-gain,high-bandwidth,rail-to-rail,constant-gm CMOS operational amplifier

This study presents a high-gain, high-bandwidth, constant-g_m , rail-to-rail operational amplifier (op-amp). The constant transconductance is improved with a source-to-bulk bias control of an input pair. A source degeneration scheme is also adapted to the output stage for receiving wide input range without degradation of the gain. Additionally, several compensation schemes are employed to enhance the stability. A test chip is fabricated in a 0.18?µm complementary metal-oxide semiconductor process. The active area of the op-amp is 181?×?173?µm² and it consumes a power of 2.41?mW at a supply voltage of 1.8?V. The op-amp achieves a dc gain of 94.3?dB and a bandwidth of 45?MHz when the output capacitive load is connected to an effective load of 42.5?pF. A class-AB output stage combining a slew rate (SR) boost circuit provides a sinking current of 6?mA and an SR of 17?V/µs.     

A 75 μW rail-to-rail class AB CMOS operational amplifier

A new class AB CMOS operational amplifier featuring rail-to-rail output swing is presented. The proposed circuit operates with an output voltage supply of 1 V only, while the overall power consumption is lower than 75 μW. The output stage shows a quiescent current of 15 μA, while it guarantees a peak current of 220 μA. The slew rate is 1.5 V μs⁻¹ (C₁ = 150 pF) and the THD is −63 dB, when a 0.98 V_pp−10.4 kHz sinewave is applied, as measured on an experimental prototype realised with a standard 0.8 μm CMOS process. The circuit presented is suitable for use in portable hand-set systems or in medical aids.     

低压工作的轨到轨输入／输出缓冲级放大器

本文提出了一种低压工作的轨到轨输入／输出缓冲级放大器。利用电阻产生的输入共模电平移动,该放大器可以在低于传统轨到轨输入级所限制的最小电压下工作,并在整个输入共模电压范围内获得恒定的输入跨导;它的输出级由电流镜驱动,实现了轨到轨电压输出,具有较强的负载驱动能力。该放大器在CSMCO．6-μmCMOS数模混合工艺下进行了HSPICE仿真和流片测试,结果表明：当供电电压为5V,偏置电流为60uA,负载电容为10pF时,开环增益为87．7dB,功耗为579uw,单位增益带宽为3．3MHz;当该放大器作为缓冲级时,输入3VPP10kHz正弦信号,总谐波失真THD为53．2dB。     

A 1.5-V high drive capability CMOS op-amp

A novel CMOS operational amplifier with a 1.5 V power supply is presented. It is based on a folded-mirror transconductance amplifier and a high-efficiency output stage. The amplifier achieves an open-loop gain and a gain-bandwidth product higher than 65 dB and 1 MHz, respectively. In addition, a 1 V peak-to-peak output voltage into a 500 Ω and 50 pF output load is provided with a total harmonic distortion of -77 dB. This performance was achieved using maximum aspect ratios of 120/1.2 and 360/1.2 for the NMOS and PMOS transistors, respectively, and a quiescent current as low as 60 μA for the driver transistors. The amplifier was implemented in a standard 1.2 μm CMOS process with threshold voltages around 0.8 V. It dissipates less than 300 μW     

一种新型高速CMOS全差分运算放大器设计

设计了一种基于流水线模/数转换系统应用的低压高速CMOS全差分运算放大器。该运放采用了折叠式共源共栅放大结构与一种新型连续时间共模反馈电路相结合以达到高速度及较好的稳定性。设计基于SMIC 0.25μm CMOS标准工艺模型,在Cadence环境下对电路进行了Spectre仿真。在2.5V单电源电压下,驱动0.5pF负载时,开环增益为71.1dB,单位增益带宽为303MHz,相位裕度为52°,转换速率高达368.7V/μs,建立时间为12.4ns。     

一种低压、恒增益Rail-to-rail运算放大器的设计

文章设计了一种低压、恒定增益、Rail-to-rail的CMOS运算放大器。该放大器采用直接交迭工作区的互补并联输入对作为输入级,在2V单电源下,负载电容为25pF时,静态功耗为0.9mW,直流开环增益、单位增益带宽、相位裕度分别为74dB、2.7MHz、60°。     

A compact rail-to-rail output stage for CMOS operational amplifiers

This paper presents a CMOS output stage devised for driving heavy resistive loads. An operational amplifier of this type has been fabricated in a 3 μm double-polysilicon CMOS technology. With a supply voltage of ∓5 V and load of 470 Ω, the amplifier has a ∓4.6-V output swing and features a 60 mA short-circuit output current. Although simple, the proposed configuration enables the output transistors to be driven efficiently     

一种采用共栅频率补偿的轨到轨输入/输出放大器

提出了一种采用共栅频率补偿的轨到轨输入/输出放大器,与传统的Miller补偿相比,该放大器不仅可以消除相平面右边的低频零点,减少频率补偿所需要的电容,还可获得较高的单位增益带宽.所提出的放大器通过CSMC 0.6μm CMOS数模混合工艺进行了仿真设计和流片测试:当供电电压为5V,偏置电流为20μA,负载电容为10pF时,其功耗为1.34mW,单位增益带宽为25MHz;当该放大器作为缓冲器,供电电压为3V,负载电容为150pF,输入2.66 Vpp10kHz正弦信号时,总谐波失真THD为-51.6dB.     

A wide-band, low-power, high slew rate voltage-feedback operationalamplifier

A wide-band low-power voltage-feedback operational amplifier on a 3 GHz, 40 V complementary bipolar technology is described. The class AB input stage takes advantage of some current-boost transistors which enhance and linearize the slew-rate during large-signal operation without increasing the power consumption. The triple-buffered output stage provides 100 mA of load current maintaining good linearity. Since the circuit design and technology development were concurrent, several different circuits were stepped into one wafer to fully characterize the process and identify the best product candidates. The low-current version of this chip has a quiescent current of 2.5 mA, 2000 V/μs slew rate and gain bandwidth of 110 MHz. The medium-current version draws only 6.5 mA of current at the same supply voltage while the slew rate increases to 3500 V/μs and bandwidth to 210 MHz. Both parts are operational from +/-2.75 V to +/-18 V supply range. Die size is 51 mils by 76 mils on a poly-emitter CB process     

A compact low noise operational amplifier for a 1.2 μm digitalCMOS technology

A compact low noise operational amplifier using lateral p-n-p bipolar transistors in the input stage has been fabricated in a standard 1.2 μm digital n-well CMOS process. Like their n-p-n counterparts in p-well processes, these lateral p-n-p transistors exhibit low 1/f noise and good lateral β. The fabricated op amp has an area of only 0.211 mm² with E_n=3.2 nV/√(Hz), I_n=0.73 pA/√(Hz), E_n and I_n 1/f noise corner frequencies less than 100 Hz, a -3 dB bandwidth greater than 10 MHz with a closed loop gain of 20.8 dB, a minimum PSRR (DC) of 68 dB, a CMRR (DC) of 100 dB, a minimum output slew rate of 39 V/μs, and a quiescent current of 2.1 mA at supply voltages of ±2.5 V. The operational amplifier drives a 1 kΩ resistive load to 1 V peak-to-peak at 10 MHz and has been used as a versatile building block for mixed-signal IC designs     

A multistage amplifier technique with embedded frequencycompensation

A new multistage operational amplifier topology requires only N-2 embedded compensation networks for N gain stages. The compensation circuits do not load the output stage, and noninverting gain stages are not required as in previous multistage approaches. Consequently, high gain, wide bandwidth, fast slewing, and excellent power efficiency are achieved. A low-power resistance-capacitance compensation technique assures stability and fast settling over process, voltage, and temperature variations. Implemented in a 0.6-μm n-well CMOS process, a single ended three-stage prototype dissipates 6.9 mW at 3.0 V with 102 dB gain, 47 MHz bandwidth, and 69 V/μs average slew rate with 40 pF load     

Rail-to-rail BiCMOS operational amplifier using input signal adapters with floating outputs

An operational amplifier with rail-to-rail input and output voltage range in 0.6 μm BiCMOS technology is presented. Two simple input signal adapters with floating outputs serving as pre-stages are introduced. They are followed by a differential amplifier. The adapters translate the input signals into a floating level within the operating region of the differential amplifier, enabling rail-to-rail operation. An inverter-based simple rail-to-rail class AB output stage has been used. With a single supply of 1.5 V, the proposed rail-to-rail operational amplifier achieves 72 dB DC open-loop gain, 2.54 MHz unity-gain frequency, 62° phase margin, 2.5 V/μs slew rate, and 147 μW power consumption.     

0．6VCMOS轨至轨运算放大器

为适应低压低功耗设计的应用,设计了一种超低电源电压的轨至轨CMOS运算放大器。采用N沟道差分对和共模电平偏移的P沟道差分对来实现轨至轨信号输入．。当输入信号的共模电平处于中间时,P沟道差分对的输入共模电平会由共模电平偏移电路降低,以使得P沟道差分对工作。采用对称运算放大器结构,并结合电平偏移电路来构成互补输入差分对。采用0．13μm的CMOS工艺制程,在0．6V电源电压下,HSpice模拟结果表明,带10pF电容负载时,运算放大器能实现轨至轨输入,其性能为：功耗390μw,直流增益60dB,单位增益带宽22MHz,相位裕度80°。     

1.2-V CMOS op-amp with a dynamically biased output stage

A very low-voltage operational amplifier in a standard CMOS process with a 0.75 V threshold voltage is presented. It uses a novel dynamically biased output stage based on the switched-capacitor approach. Thanks to this, drive performance is greatly improved and accurate current control is also achieved. The amplifier is capable of working with a power supply as low as 1.2 V while providing a -74 dB total harmonic distortion with a 700 mV peak-to-peak output voltage into a 500 Ω and 20 pF output load. The open-loop gain and the gain-bandwidth product are higher than 90 dB and 2.2 MHz, respectively     

一种恒跨导轨对轨CMOS运算放大器的设计

设计了一种新颖的恒跨导轨对轨CMOS运算放大器结构。输入级采用轨对轨的结构,在输入级采用4个虚拟差分对管来对输入差分对的电流进行限制,使运放的输入级跨导在工作范围内保持恒定。输出级采用前馈式AB类输出结构,以使输出达到全摆幅。仿真结果显示,在5 V电源电压和带有10 pF电容与10 kΩ电阻并联的负载下,该运放在共模输入范围内实现了恒跨导,在整个共模输入范围内跨导变化率仅为3%,输出摆幅也达到了轨对轨全摆幅,运放的开环增益为108.5 dB,增益带宽积为26.7 MHz,相位裕度为76.3°。     

A BiCMOS limiting amplifier for SONET OC-3

This paper presents a Synchronous Optical NETwork (SONET) OC-3 155.52 Mb/s limiting amplifier, which is implemented in a 1.0 μm double-poly double-metal N-well BiCMOS technology. Composed of amplifier cells, a slicer, an output driver, and offset cancellation circuits, this limiting amplifier allows an input dynamic range of 36 dB (6 mV_pp~400 mV_pp) and provides a constant output 1 V _pp across a 50 Ω load for long-haul 40 km application. The active area of this limiting amplifier is 0.8 mm×3.0 mm. It consumes 130 mW from a single -5 V supply voltage     

恒跨导高摆率轨对轨运算放大器的设计

本文在分析MOS管恒跨导输入级和AB类输出级运算放大器的基础上设计了一个高摆率、恒跨导的轨对轨运算放大器。在输入级中采用了齐纳二极管的稳压原理,保证Rail-to-Rail运算放大器的输入跨导恒定。为了实现高转换率,本文采用了一种新型的压摆率提高电路。另外,为了提高系统的稳定性,采用了控制零点的米勒补偿进行频率补偿。采...     

1.8 GHz class E power amplifier for wireless communications

The authors present a 1.8 GHz class E power amplifier for wireless communications. A fully integrated class E power amplifier module was designed, fabricated and tested. The circuit was implemented in a self-aligned-gate, depletion mode 0.8 μm GaAs MESFET process. The amplifier delivers 23 dBm of power to the 50Ω load, with a power added efficiency of 57% at a supply voltage of 2.4 V     

A Low-Voltage Fully Differential Constant-Gm Rail-to-Rail CMOS Operational Amplifier

A low-voltage fully differential CMOS operational amplifier withconstant-g_mand rail-to-rail input and output stages ispresented. It is the fully differential version of a previously realizedsingle-ended operational amplifier where a novel circuit to ensure constanttransconductance has been implemented [1]. The input stage is a rail-to-railstructure formed by two symmetrical OTAs in parallel (the input transistorsare operating in weak inversion). The class-AB output stages have also afull voltage swing. A rail-to-rail input common mode feedback structureallows the output voltage control. Measurements in a 0.7 µ standardCMOS process with threshold voltages of about 0.7 V have been done. Theminimum experimental supply voltage is about 1.1 V. The circuit provides a60 dB low frequency voltage gain and about 1.5 MHz unity gain frequency fora total power consumption of about 0.72 mW at a 1.5 V supply voltage.