CdS/TiO_2球棒结构异质结的合成及其光电化学性能研究

利用循环伏安电沉积法将CdS纳米颗粒沉积在TiO2纳米棒阵列上制备了CdS/TiO2复合薄膜,采用XRD、SEM和UV-Vis分光光度计对样品的晶体结构、微观形貌和光学性质进行了表征,并研究了紫外光预处理TiO2对复合薄膜的结构和光电化学性能的影响。结果表明,制备的TiO2薄膜为沿c轴择优取向的金红石单晶,CdS成功电沉积到TiO2纳米棒的顶部形成了CdS/TiO2球棒结构异质结,所制复合薄膜的光吸收边均扩展到了可见光区域。特别是对TiO2纳米棒阵列进行紫外线照射预处理后,复合薄膜中CdS的含量显著提高,其表现出更好的光电化学性能。     

PbS量子点的化学制备及其太阳能光伏特性

通过化学溶液体系中反应温度与原料配比的控制合成了第一吸收峰在833～1700 nm范围内可调的PbS量子点.利用X射线衍射(XRD)、透射电子显微镜(TEM)和高分辨透射电子显微镜(HRTEM) 、吸收光谱等手段研究了化学溶液法制备的PbS量子点形貌、尺寸分布以及近红外吸收等特性.所获得的量子点尺寸分布均匀, 直径在2.6 ～7.0 nm范围内可调.基于PbS量子点的红外吸收特性, 通过表面修饰方法在原子层沉积技术(ALD)生长的TiO2薄膜上构筑了FTO/TiO2/PbS/Au光伏器件结构, 并初步研究了光电流与量子点特征吸收的关系等光电转换特性.     

酞菁染料ZnPc和Q-PbS复合敏化纳米晶ZnO薄膜电极的研究

利用溶胶-凝胶旋涂镀膜法结合热处理工艺在FTO玻璃上制备了ZnO薄膜,并通过X射线衍射(XRD)、扫描电子镜(SEM)对其晶相及表面形貌进行了表征;以酞菁染料ZnPc和窄禁带半导体PbS量子点(Q-PbS)为敏化剂,分别制备了FTO/ZnO/ZnPc电极、FTO/ZnO/Q-PbS电极和FTOZnO/Q-PbS/ZnPc电极,结果表明,ZnPc和Q-PbS对ZnO纳米颗粒膜产生了良好的敏化作用,且两者的复合敏化效果最好;制备了FTO/ZnO/Q-PbS/ZnPc为光阳极的染料敏化太阳能电池(DSSC),在模拟太阳光下,电池的开路电压为304mV,短路电流为1.42mA,光电转换效率为0.696%,填充因子为0.348。     

对NpHR光敏感蛋白具有刺激作用的光电极研制

光电极是研究光遗传学不可或缺的工具之一。波长为460nm的蓝光可以对ChR2神经蛋白产生刺激,而波长为580nm的黄光可以刺激NpHR神经蛋白,对生物体的反应产生抑制。目前,蓝光波段的光电极具有很高的功率密度,可以满足光遗传学的研究,而黄光波段半导体发光器件的发光效率较低,因此对黄光波段的光电极研究较少。在蓝宝石衬底蓝光光电极研制的基础上,通过激发黄色荧光粉和量子点两种形式获得黄光,并通过沉积SiO2/TiO2分布式布拉格反射镜（DBR）有效滤除了蓝光波段的激发光,最后通过沉积Ag金属反射镜增强黄光信号,制备出荧光粉基和量子点基黄光光电极。与荧光粉基黄光光电极相比,量子点基黄光光电极具有更高的功率密度、更窄的光谱半宽和更薄的厚度。在1～10mA的注入电流下,量子点基黄光光电极的功率密度为4.46～15.37mW/mm2,满足刺激NpHR神经蛋白的要求。     

纳米NiCo_2O_4电极材料的结构表征及超级电容性能研究

本文通过电沉积法在泡沫镍上沉积了绿色(Co,Ni)氢氧化物前驱体,并通过退火处理制备了纳米NiCo2O4电极材料。利用扫描电子显微镜(SEM)和透射电子显微镜(TEM)表征了生长在泡沫镍上的纳米NiCo2O4电极材料的形貌特征,成分和显微结构。通过对这些样品进行恒流密度充放电以及循环伏安测试对纳米NiCo2O4电极材料进行了电化学性能评价。结果表明,电化学性能最佳的纳米Ni Co2O4生长厚度为2.80μm,纳米片长度在390~785 nm之间,该电极材料在1 m A/cm2的充放电电流密度下比容量达到了1.4 F/cm2,在30 m A/cm2电流密度下比容量依然保持了0.68 F/cm2。该样品在5 m A/cm2的充放电电流密度下循环充放电2 000次之后依然保持了94%的初始比容量,显示出了较高的循环稳定性。     

TiO2纳米棒光阳极的制备及性能改进

首先采用水热法制备 TiO2纳米棒光阳极,并引入 Au@SiO2纳米颗粒对其性能进行改善。结果表明,Au@SiO2纳米颗粒的引入虽然增强了光吸收,但同时减少了染料在 TiO2纳米棒上的吸附量,反而导致了电池器件性能的下降。因此,在 TiO2纳米棒/Au@SiO2纳米颗粒结构上进一步生长一层 TiO2钝化层：一方面可增加染料吸附量;另一方面有利于减少电荷复合。基于这种光阳极组装的染料敏化太阳能电池获得了 2.34%的光电转换效率,较单一 TiO2纳米棒光阳极组装的电池效率提高了 60%。     

SiO2膜的薄层化对自组织生长Si纳米量子点发光特性的影响

采用低压化学气相沉积方法,依靠纯SiH4气体的热分解反应,在SiO2表面上自组织生长了Si纳米量子点.实验研究了SiO2膜的薄层化对Si纳米量子点光致发光特性的影响.结果表明,当SiO2膜厚度减薄至6nm以下时,Si纳米量子点中的光生载流子会量子隧穿超薄SiO2层,并逃逸到单晶Si衬底中去,从而减少了光生载流子通过SiO2/Si纳米量子点界面区域内发光中心的辐射复合效率,致使光致发光强度明显减弱.测试温度的变化对Si纳米量子点光致发光特性的影响,则源自于光生载流子通过SiO2/Si纳米量子点界面区域附近非发光中心的非辐射复合所产生的贡献.     

SiO2膜的薄层化对自组织生长Si纳米量子点发光特性的影响

采用低压化学气相沉积方法,依靠纯SiH4气体的热分解反应,在SiO2表面上自组织生长了Si纳米量子点.实验研究了SiO2膜的薄层化对Si纳米量子点光致发光特性的影响.结果表明,当SiO2膜厚度减薄至6nm以下时,Si纳米量子点中的光生载流子会量子隧穿超薄SiO2层,并逃逸到单晶Si衬底中去,从而减少了光生载流子通过SiO2/Si纳米量子点界面区域内发光中心的辐射复合效率,致使光致发光强度明显减弱.测试温度的变化对Si纳米量子点光致发光特性的影响,则源自于光生载流子通过SiO2/Si纳米量子点界面区域附近非发光中心的非辐射复合所产生的贡献.     

电沉积法制备ZnO薄膜的结构与光电性能研究

以硝酸锌和硝酸钾混和溶液为电解液,采用两电极体系在SnO2;F(FTO)片和p-Si(100)衬底上用不同沉积电压制备了c轴取向的ZnO薄膜.用X-射线衍射、扫描电子显微镜和分光光度计分析了薄膜的相结构,晶粒尺寸和光吸收特性.发现薄膜的(002)衍射峰强度随着沉积电压的增加而显著增强;薄膜中晶粒为典型的六方柱状结构,且基本与衬底垂直,晶粒尺寸为200～400 nm;薄膜的光学禁带宽度为3.34 eV.光照时,ZnO/Si异质结二极管呈明显的光生电流效应.     

Pt负载型TiO2纳米管阵列的制备及其紫外探测性能

首先利用电化学阳极氧化方法在钛箔上合成整齐有序的TiO2纳米管阵列(TNA);然后采用电化学沉积的方法在纳米管表面均匀沉积高功函数的Pt纳米颗粒以构建Pt/TNA肖特基结,通过SEM、EDS和XRD等表征方法研究了Pt/TNA肖特基结的表面形貌和结构;最后通过测试不同光照强度下的电压-电流(V-I)和电流-时间(I-t)曲线研究了Pt/TNA肖特基结的紫外光电性能。实验发现,在1V偏压和光照强度为1.37mW/cm2的375nm紫外光照射下,Pt/TNA肖特基结的光电流可达3.71μA,响应度为0.015A/W,外量子效率为5.11%,光响应因子高达1 892.8,表明紫外光电探测性能得到显著提高。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first