共查询到19条相似文献,搜索用时 125 毫秒
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评论了Ⅱ-Ⅵ族半导体HgCdTe的化学束-气源外延生长系统的设计和研制,介绍了生长HgCdTe外延层和气体源掺碘CdTe外延层的最新结果,这些结果表明了用这种技术生长用于制备先进红外探测器的优质材料的可能性. 相似文献
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HgCdTe是制造焦平面阵列最受关注的材料,注入掺杂又是研制焦平面阵列极有前途的工艺方法。但HgCdTe特性“娇嫩”,如Hg易分凝,因此研究这种的注入工艺成为首要的条件。考察了注入功率引起样品升温的影响,研究了不同注入能量、束流密度、剂量、元素等与材料之间性能变化的关系。通过离子注入HgCdTe的热学分析,实验研究了HgCdTe注入的工艺条件,束流与注入能量是Hg分弟的主要因素。 相似文献
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参照Si的电导率与杂质能级热激发的关系,提出了一种新的微型温度计。它可以测量HgCdTe注入过程中温度变化,精度为±0.1℃。实验表明注入靶流I=5μA,注入能量E=150keV为宜。 相似文献
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采用红外透射法测n型HgCdTe晶片的组分x.范德堡法测晶片的载流子浓度n0。用实测值x和n0计算出在相同低温热处理条件下不同组分(0.190<x<0.230)的n型HgCdTe晶片77K时本征浓度ni和杂质浓度nd.得到比值nd/ni与组分x的关系曲线。对此曲线分析可知,77K时HgCdTe(0.190<X<0230)并不处于杂质电离饱和区,而是处于过渡区,故不可以将霍耳系数R确定的载流于浓度n0视为杂质浓度nd。 相似文献
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利用剥层分析技术对已知失效的HgCdTe光导探测器进行逆向分析,研究了器件制造过程中主要工艺引入的缺陷以及形貌,寻找器件失效原因,并分析了工艺损伤与器件电性能的关系。 相似文献
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文中报道了碲镉汞的反常高电子迁移率。变磁霍尔测量和小光点扫描红外透射测量结果表明,反常高电子迁移率碲镉汞样品中存在导电非均匀性,这种导电非均匀性是横向组分严重偏析形成的负径向电子浓度梯度(电子浓度从晶片中心向周边减小)造成的。负径向电子浓度梯度的导电非均匀性使HgCdTe电子迁移率的测量值反常地高。 相似文献
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Minority carrier recombination lifetime calculations for narrow-gap semiconductors are of direct practical interest in establishing
whether a material’s recombination is extrinsically or intrinsically limited, and therefore in guiding research and development
programs regarding material quality improvements. We describe efforts to obtain accurate electronic band structures of HgCdTe
alloy-based materials with infrared energy gaps and employ them to evaluate Auger recombination lifetimes. We use a 14-band
k · p formalism to compute and optimize electronic band structures, and use the obtained electronic energies and matrix elements
directly in the numerical evaluation of Auger and radiative lifetimes. 相似文献
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光数载流子扫出效应是限制碲镉汞(HgCdTe)光导器件性能提高的重要因素之一。交叠结构的光导器件能有效地消除少数载流子扫出效应,就结构的尺寸问题,进行了理论分析和实验,实验结果与理论符合,器件呼应率有较大的提高。 相似文献
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通过碲镉汞液相外延薄膜的典型缺陷的研究,结合国内外的研究现状,综述了各种缺陷的特征、起因、消除方法等。通过对HgCdTe液相外延层中常见的缺陷进行归纳和总结,探讨各种缺陷的可能起因,以达到提高液相外延工艺水平的目的。 相似文献
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P. Mitra T. R. Schimert F. C. Case R. Starr M. H. Weiler M. Kestigian M. B. Reine 《Journal of Electronic Materials》1995,24(5):661-668
Metalorganic chemical vapor depositon (MOCVD) in situ growth of p-on-n junctions for long wavelength infrared (LWIR) and medium
wavelength infrared (MWIR) photodiodes is reported. The interdiffused multilayer process was used for the growth of the HgCdTe
junctions on CdTe and CdZnTe substrates. The n-type region was grown undoped while the p-type layer was arsenic doped using
tertiarybutylarsine. Following a low temperature anneal in Hg vapor, carrier densities of (0.2-2) x 1015 cm3 and mobilities of (0.7-1.2) x 105 cm2/V-s were obtained for n-type LWIR (x ~ 0.22) layers at 80K. Carrier lifetimes of these layers at 80 K are ~l-2 μs. For the
p-type region arsenic doping was controlled in the range of (1-20) x 1016 cm-3. Arsenic doping levels in the junctions were determined by calibrated secondary ion mass spectroscopy depth profile measurements.
Composition and doping of the p-on-n heterojunctions could be independently controlled so that the electrical junction could
be located deeper than the change in the composition. The graded composition region between the narrow and wide (x = 0.28-0.30)
bandgap regions are 1–2 μm depending on the growth temperature. Backside-illuminated variable-area circular mesa photodiode
arrays were fabricated on the grown junctions as well as on ion implanted n-on-p MWIR junctions. The spectral responses are
classical in shape. Quantum efficiencies at 80K are 42–77% for devices without anti-reflection coating and with cutoff wavelengths
of 4.8–11.0 μm. Quantum efficiencies are independent of reverse bias voltage and do not decrease strongly at lower temperatures
indicating that valence band barrier effects are not present. 80K RoA of 15.9 Ω-cm2 was obtained for an array with 11.0 μm cutoff. Detailed measurements of the characteristics of the MOCVD in situ grown and
implanted photodiodes are reported. 相似文献
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通过改变碲锌镉衬底的表面加工方法及溴-甲醇腐蚀液的浓度,研究衬底的表面状态对碲镉汞薄膜表面起伏情况的影响。利用傅里叶红外透射(FTIR)光谱议、晶片扫描成像系统、光学显微镜等工具对不同条件下的碲镉汞薄膜的表面起伏情况进行观察和比较。研究初步发现碲锌镉衬底不经过化学抛光,以及不经过腐蚀直接进行外延的情况下得到的碲镉汞薄膜的表面起伏状况会得到一定程度的改善,但是考虑溴-甲醇腐蚀液对机械抛光造成的表面应力的释放作用以及外延过程中的衬底回熔的相互作用会使得外延所得碲镉汞薄膜表面起伏情况更加复杂。因此,仍需要对衬底使用前的化学抛光对薄膜表面起伏的作用以及确定合适的溴-甲醇腐蚀液的浓度进行进一步的研究。 相似文献