Microstructure and Crystal Structure of Bismuth Oxide Phases in Zinc Oxide Varistor Ceramics

The microstructure and crystal structure of bismuth oxide phases of as-sintered and additionally heat-treated ZnO varistor ceramics was examined by means of transmission electron microscopy and X-ray powder diffraction. Grains of β-Bi₂O₃ present in as-sintered samples were found to consist of two types of domains which have the same basic tetragonal lattice. They can, however, be distinguished by the contrast between local strain centers due to microdefects present in one domain. Some multiple-grain junctions contained both α- and β-Bi₂O₃ grains. Heat treatment induces a transformation of the α- and β-Bi₂O₃ phases into γ-Bi₂O₃. A clear crystallographic relationship between the transforming phases β to γ is shown. The β-Bi₂O₃ phase was also found to transform into the non-stoichiometric crystalline Bi₂O_2.33 phase.     

Grain Growth in Sintered ZnO and ZnO-Bi2O3 Ceramics

Grain growth in a high-purity ZnO and for the same ZnO with Bi₂O₃ additions from 0.5 to 4 wt% was studied for sintering from 900° to 1400°C in air. The results are discussed and compared with previous studies in terms of the phenomenological kinetic grain growth expression: G ⁿ— G ⁿ₀= K ₀ t exp(— Q/RT ). For the pure ZnO, the grain growth exponent or n value was observed to be 3 while the apparent activation energy was 224 ± 16 kJ/mol. These parameters substantiate the Gupta and Coble conclusion of a Zn²⁺ lattice diffusion mechanism. Additions of Bi₂O₃ to promote liquidphase sintering increased the ZnO grain size and the grain growth exponent to about 5, but reduced the apparent activation energy to about 150 kJ/mol, independent of Bi₂O₃ content. The preexponential term K ₀ was also independent of Bi₂O₃ content. It is concluded that the grain growth of ZnO in liquid-phase-sintered ZnO-Bi₂O₃ ceramics is controlled by the phase boundary reaction of the solid ZnO grains and the Bi₂O₃-rich liquid phase.     

Low Breakdown Voltage Varistors by Grain Boundary Diffusion of Molten Bi2O3 in ZnO

Diffusion of molten Bi₂O₃ into the grain boundaries of sintered, alumina-doped (0.23 and 0.7 mol%) ZnO pellets resulted in varistors with breakdown voltages in the 3–5 V range and nonlinearity coefficients of 10–24. The varistors were fabricated by spreading a thin layer of Bi₂O₃ powder on the surface of ZnO pellets and heating the combination to various temperatures (860–1155°C) and different times. The highest nonlinearity coefficients (20–24) and lowest breakdown voltages (3–5 V) were recorded in samples annealed at 860°C for 35 min. Longer annealing times and/or higher temperatures resulted in progressively higher breakdown voltages. Eventually the devices became insulating, which was attributed to the formation of an insulating Bi₂O₃ layer between the grains. Separate wetting experiments have shown that the penetration of Bi₂O₃ into ZnO grain boundaries was a strong function of alumina doping —the penetration rate was decreased by a factor of 5–7 as the ZnO was doped with as little as 0.2 mol% alumina. It is this slowing down of the penetration of the ZnO grain boundaries that is believed to be critical in the development of the low breakdown voltages observed.     

Pore–Boundary Separation Behavior during Sintering of Pure and Bi2O3-Doped ZnO Ceramics

Pore–boundary separation in ZnO and 99.95ZnO·0.05Bi₂O₃ (in mol%) specimens during sintering at 1200°C was investigated. In pure ZnO specimens, pores were attached to the grain boundaries and disappeared during the final stage of sintering. In the Bi₂O₃-doped specimens, on the other hand, many pores were separated from the boundaries and trapped inside the grains. Observation using transmission electron microscopy showed that a thin layer of Bi₂O₃-rich phase existed at the boundaries in the Bi₂O₃-doped specimens. The pore separation in 99.95ZnO·0.05Bi₂O₃ specimens was explained in terms of the dihedral angle change and the high mobility of a liquid film boundary.     

Nature of Intergranular Phase in Nonohmic ZnO Ceramics Containing 0.5 Mol% Bi2O3

The intergranular phase obtained by sintering a binary mixture of ZnO + 0.5 mol% Bi₂O₃ was isolated by using a dilute solution of HCIO₄, which etches ZnO preferentially. The combined results of selected-area electron diffraction and microscopy, microprobe analysis, and X-ray diffraction strongly indicate that the intergranular material is a polycrystalline phase of tetragonal β-Bi₂O₃ ( P 42₁ c ), rather than the amorphous ZnO-Bi₂O₃ phase reported earlier. It appears that the nonohmic behavior in this prototype metal-oxide varistor must be an interfacial property associated with the semiconducting ZnO grains separated by thin layers of high-resistivity Bi₂O₃.     

Dielectric Properties of the Fluorite-like Bi2O3–Nb2O5 Solid Solution and the Tetragonal Bi3NbO7

Our analysis of the microwave dielectric properties of the δ-Bi₂O₃–Nb₂O₅ solid solution (δ-BN_ss) showed a continuous increase in permittivity and dielectric losses with an increasing concentration of Nb₂O₅. The only discontinuity was found for the temperature coefficient of resonant frequency, which is negative throughout the entire homogeneity range but reaches a minimum value for the sample with 20 mol% Nb₂O₅. At the same composition there is a discontinuity in the grain size of the δ-BN_ss ceramics. For the sample containing 25 mol% Nb₂O₅ two structural modifications were observed. A single-phase tetragonal Bi₃NbO₇, in the literature referred to as a Type-III phase, is formed in a very narrow temperature range from 850° to 880°C. A synthesis performed below or above this temperature range resulted in the formation of the end member of the δ-BN_ss homogeneity range. Compared with the δ-BN_ss the Bi₃NbO₇ ceramics exhibit lower microwave dielectric losses, an increased conductivity, and a positive temperature coefficient of resonant frequency.     

Microstructure of Varistors Prepared with Zinc Oxide Nanoparticles Coated with Bi2O3

Zinc oxide (ZnO) nanoparticles coated with 1–5 wt% Bi₂O₃ were prepared by precipitating a Bi(NO₃)₃ solution onto a ZnO precursor. Transmission electron microscopy showed that a homogeneous Bi₂O₃ layer coated the surface of the ZnO nanoparticles and that the ZnO particle size was ∼30–50 nm. Scanning electron microscopy showed that ZnO grains sintered at 1150°C were homogeneous in size and surrounded by a uniform Bi₂O₃ layer. When the ZnO grains were surrounded fully by Bi₂O₃ liquid phases, further increases in the ZnO grain size were not affected by the Bi₂O₃ content. This predesigned ZnO nanoparticle structure was shown to promote homogeneous ZnO grains with perfect crystal growth.     

Temperature/Composition Phase Diagram of the System Bi2O3-PbO

The Bi₂O₃-PbO phase diagram was determined using differential thermal analysis and both room- and high-temperature X-ray powder diffraction. The phase diagram contains a single eutectic at 73 mol% PbO and 635°C. A body-centered cubic solid solution exists above ∼600°C within a composition range of 30 to 65 mol% PbO. The compounds α-Bi₂O₃, σ5-Bi₂O₃, and γ-PbO (litharge) have wide solubility ranges. Four compounds, 6Bi₂O₃·PbO, 3Bi₂O₃·2PbO, 4Bi₂O₃,5PbO, and Bi₂O₃·3PbO, are formed in this system and the previously unreported X-ray diffraction patterns of the latter three compounds are reported. Diffraction patterns for some of these mixed oxides have been observed in ZnO-based varistors grown using Bi₂O₃ and PbO as sintering aids.     

Grain Growth of ZnO during Bi2O3 Liquid-Phase Sintering

Grain growth of ZnO during the liquid-phase sintering of binary ZnO–Bi₂O₃ ceramics has been studied for Bi₂O₃ contents from 3 to 12 wt% and sintering from 900° to 1400°C. The results are considered in combination with previously published studies of ZnO grain growth in the ZnO–Bi₂O₃ system. For the Bi₂O₃ contents of the present study, the rate of ZnO grain growth is found to decrease with increasing Bi₂O₃. Activation analysis, when combined with the results of similar analyses of the previous studies, reveals a change in the rate-controlling mechanism for ZnO grain growth. Following a low-Bi₂O₃-content region of nearly constant activation energy values of about 150 kJ/mol, further Bi₂O₃ additions cause an increase of the activation energy to about 270 kJ/mol. consistent with accepted models of liquid-phase sintering, it is concluded that the rate-controlling mechanism of ZnO grain growth during liquid-phase sintering in the presence of Bi₂O₃ changes from one of a phase-boundary reaction at low Bi₂O₃ levels to one of diffusion through the liquid phase at about the 5 to 6 wt% Bi₂O₃ level and above.     

Microstructural Development in SnO2-Doped ZnO–Bi2O3 Ceramics

The effects of adding small quantities of SnO₂ to the basic ZnO–Bi₂O₃ varistor composition were studied in terms of phase reactions, microstructural development, and the formation of inversion boundaries. Scanning and transmission electron microscopy studies showed that the inversion boundaries, triggered by the addition of SnO₂, cause anisotropic grain growth in the early stages of sintering. ZnO grains that include inversion boundaries grow exaggeratedly, at the expense of normal grains, until they dominate the microstructure. Higher additions of SnO₂ lead to an increase in number of grains with inversion boundaries and to a more fine-grained microstructure. The increasing amount of secondary phases is also related to a higher level of SnO₂ addition; however, the influence of these phases on ZnO grain growth is subordinate to the role of inversion boundaries.     

Grain Growth of ZnO in ZnO-Bl2O3 Ceramics with Ai2O3 Additions

Grain growth of ZnO during liquid-phase sintering of a ZnO-6 wt% Bi₂O₃ ceramic was investigated for A1₂O₃ additions from 0.10 to 0.80 wt%. Sintering in air for 0.5 to 4 h at 900° to 1400°C was studied. The AI₂O₃ reacted with the ZnO to form ZnAl₂O₄ spinel, which reduced the rate of ZnO grain growth. The ZnO grain-growth exponent was determined to be 4 and the activation energy for ZnO grain growth was estimated to be 400 kJ/mol. These values were compared with the activation parameters for ZnO grain growth in other ceramic systems. It was confirmed that the reduced ZnO grain growth was a result of ZnAl₂O₄ spinel particles pinning the ZnO grain boundaries and reducing their mobility, which explained the grain-growth exponent of 4. It was concluded that the 400 kJ/mol activation energy was related to the transport of the ZnAl₂O₄ spinel particles, most probably controlled by the diffusion of O^2- in the ZnAl₂O₄ spinel structure.     

Phase Relations and Dielectric Properties in the Bi2O3–ZnO–Ta2O5 System

Dielectric properties and phase formation of Bi-based pyrochlore ceramics were evaluated for the Bi₂O₃–ZnO–Ta₂O₅ system. The compositional range r Bi₂(Zn_1/3Ta_2/3)₂O₇· (1− r )(Bi_3/2Zn_1/2)(Zn_1/2Ta_3/2)O₇ (0 ≤ r ≤ 1) in Bi₂O₃–ZnO–Ta₂O₅ was investigated to determine the relative solubility of BZT cubic (α-BZT, r = 0) and the pseudo-orthorhombic (β-BZT, r = 1) end members. It was found that extrinsic factors, such as kinetically limited phase formation and bismuth loss, contribute to apparent phase boundaries in addition to thermodynamic stability of each phase. Considering this, the locations of true phase boundaries were r < 0.30 and r ≥ 0.74 for α and β phases, respectively. Dielectric constants between 58 and 80 and low dielectric loss (tan δ < 0.003) were measured for the complete compositional range. The temperature coefficient of capacitance was controlled by composition, which was found to be <30 ppm/°C at the edge of β-phase solid solution. In addition to the excellent dielectric properties these materials can be sintered at low temperatures, which make Bi-based pyrochlores promising candidates for high-frequency electronic applications.     

Bi2O3 Vaporization in Microwave-Sintered ZnO Varistors

Vaporization of Bi₂O₃ in microwave-sintered ZnO varistors is discussed in this study. The Bi₂O₃ vaporization of ZnO varistors sintered by a conventional electric furnace is also studied for comparison. The results show that the Bi₂O₃ vaporization in microwave-sintered ZnO varistors is more homogenous from the surface to the inside of the sample, which results from the special thermal gradient inside the microwave-sintered samples, and we also find out that the Bi₂O₃ vaporization directly affects the electrical properties of ZnO varistors. Microwave-sintered samples exhibit more excellent electrical properties than the conventional ones because the homogenous Bi₂O₃ vaporization leads to more uniform microstructures.     

Effect of Bi2O3 on Impurity Ion Distribution and Electrical Resistivity of Li-Zn Ferrites

Preventing the incorporation of impurities in Li-Zn ferrite grains during sintering is essential for production of ceramics with reproducible magnetic and electrical properties. Li-Zn ferrites of composition Li_0.3Zn_0.4Mn_0.05Fe_2.25O₄ were prepared with Bi₂O₃ and borosilicate sintering additives. The distribution of impurity ions in the sintered ferrites was investigated using transmission electron microscopy (TEM) coupled with energy dispersive spectroscopy (EDS). Ceramics prepared with Bi₂O₃ contained Si, Ca, and S impurities, located at grain boundaries and triple point regions. The low viscosity and good wetting properties of the Bi₂O₃ and to a lesser extent the borosilicate liquid phase allowed impurities to be selectively removed from the growing ferrite phase during sintering, thus improving sample resistivities.     

Grain Growth of Zinc Oxide During the Sintering of Zinc Oxide—Antimony Oxide Ceramics

Grain growth in a high-purity ZnO with systematic additions of Sb₂O₃ from 0.29 to 2.38 wt% was studied for sintering in air from 1106° to 1400°C. The results are discussed and compared with previous studies of pure ZnO and ZnO with Bi₂O₃ additions in terms of the kinetic grain growth expression: Gⁿ – Gⁿ ₀= K ₀ t exp(— Q/RT ). Additions of Sb₂O₃ inhibited the grain growth of ZnO and increased the grain growth exponent ( n -value) to 6 from 3 for pure ZnO and 5 for the ZnO—Bi₂O₃ ceramic. The apparent activation energy for the grain growth of ZnO also increased to about 600 kJ/mol from 220 kJ/mol for pure ZnO and 150 kJ/mol for the ZnO—Bi₂O₃ ceramics. Both the grain growth exponent and the activation energy were independent of the Sb₂O₃ content. Particles of the Zn₇Sb₂O₁₂ spinel were observed on the grain boundaries and at the grain triple point junctions. It was also observed that the Sb₂O₃ additions caused twin formation in each ZnO grain. It is concluded that both the Zn₇Sb₂O₁₂ particles and the twins are responsible for the ZnO grain growth inhibition by Sb₂O₃.     

Microstructure and Grain Boundary Structure of Na+-Diffused (Sr,Ca)TiO3 Capacitor-Varistor Ceramics

The microstructure of (Sr,Ca)TiO₃ capacitor-varistor materials has been investigated by employing electron microscopy techniques (TEM, STEM, HREM, EDX, and EPA). The material is found to contain (Sr,Ca)TiO₃ grains (∼30 μm) having perovskite crystal structure with domains, a Na⁺-diffused layer at the grain boundaries which is dependent on thermal diffusion conditions, and multiple-grain junctions in which the Ti _n O_2n–1 Magneli phase coexists with an amorphous intergranular phase. In addition, wider grain boundaries (10–30 nm), thin grain boundaries (∼1 nm), and clean grain boundaries which are free from intergranular phase were observed, and the effects of different grain boundaries on the diffusion of Na⁺are discussed.     

Microstructures of SrTiO3 Internal Boundary Layer Capacitors During and After Processing and Resultant Electrical Properties

The microstructure of strontium titanate internal boundary layer capacitors at various stages in their processing was studied by transmission electron microscopy of rapidly quenched and normally cooled samples. Compositions containing excess TiO₂, Al₂O₃, and SiO₂ have a completely wetting liquid phase at the sintering temperature; during cooling Ti_nO_{2 n −1}, Magneli phases precipitate at multiple grain junctions. Diffused metal oxides and flux (Bi₂O₃, PbO, CuO, and B₂O₃) rapidly penetrate as a liquid phase along boundaries in postsintering heat treatment. This liquid phase disappears during slow cooling.     

Low-Temperature Sintering, Densification, and Properties of Z-type Hexaferrite with Bi2O3 Additives

The effect of the addition of Bi₂O₃ on the densification, low-temperature sintering, and electromagnetic properties of Z-type planar hexaferrite was investigated. The results show that Bi₂O₃ additives can improve the densification and promote low-temperature sintering of Z-type hexaferrite prepared by a solid-state reaction method. The presence of Bi₂O₃ in the grain boundaries and the generation of Fe²⁺ degrade the initial permeability of the samples but make the quality factor and cut-off frequency increase. Various possible mechanisms involved in generating these effects were also discussed.     

Electrical Properties of ZnO-Bi2O3 Ceramics

The nonlinear volt-ampere characteristics and small-signal ac capacitance and resistance of sintered ZnO containing 0.5 mol% Bi₂O₃ were measured. Many of the electrical properties are related directly to the microstructure, which consists of conductive ZnO grains separated by a continuous amorphous Bl₂O₃, phase. The origin of the nonlinear conduction in the intergranular phase was confirmed by experiments with evaporated thin films. The proposed conduction mechanism in varistors containing ZnO and Bi₂O₃ is a combination of hopping and tunneling in the amorphous phase.     

Grain Growth Control in Sb2O3-Doped Zinc Oxide

Microstructure development in Sb₂O₃-doped ZnO was studied to evaluate the influence of inversion boundaries (IBs) on ZnO grain growth. In general, the addition of Sb₂O₃ is believed to inhibit the ZnO grain growth via the formation of spinels and IBs, but we have shown that even the conditions of exaggerated grain growth can be created in this system. We designed an experiment for diffusional doping of ZnO under slightly increased partial pressure of Sb₂O₃. In the high-concentration regime we observed no spinels, and yet the ZnO grains were small and inhibited in growth, while in the low-concentration regime we found huge grains, several times larger than normal ZnO grains, showing an obvious exaggerated growth. By controlling the number of nuclei with IBs we can design coarse-grained microstructures even with Sb₂O₃ doping, which has far-reaching implications in the production of low-voltage varistor devices.