高难度集成电容器制造技术在探索中推进

电容器、电阻器和电感器等这类无源元件是电子线路中进行各项功能如信号去耦、开关噪声抑制、滤波和调谐的重要部件。电子工业持续小型化发展非常需要将这类无源元件集成到印制线路板(PCB)或多芯片组件里芯片下面的介质层上。在约8000亿块无源元件/年的市场里,目前只有不到3％是采用集成形式。 在各种无源元件中,电容器在节省实用面积方面需要特别关注,因为它用量相对较大,占用面积较多。除了节省实用面积之外,集成电容器具有寄生电容少、电     

Effectiveness of multiple decoupling capacitors

The effectiveness of using the parallel combination of large-value and small-value capacitors to increase the frequency coverage of either one and overcome the effect of lead inductance is examined. Computed and experimental results are given that show this scheme is not significantly effective. The improvement at high frequencies is at most 6 dB over the use of only the large-value capacitance     

Cubic paraelectric (nonferroelectric) perovskite PLT thin filmswith high permittivity for ULSI DRAMs and decoupling capacitors

Polycrystalline paraelectric perovskite thin films in the Pb-La-Ti-O or PLT (28 mol.% La) system have been studied. Thin (0.5-μm) films were integrated onto 3-in Pt/Ti/SiO₂/(100) Si wafers by the sol-gel processing technique. Low-field dielectric measurements yielded dielectric permittivity and loss tangent of 1400 and 0.015, respectively, while high-field Sawyer-Tower measurements (P-E) showed linear behavior up to 40 kV/cm, which approached saturation at 200 kV/cm. Pulse charging transient and current-voltage measurements indicated a high charge storage density (15.8 μC/cm²) and low leakage current density (0.50 μA/cm²) under a field of 200 kV/cm. The charging time for a 1-μm² PLT capacitor at 200 kV/cm was estimated to be 0.1 ns. The preliminary data demonstrate that paraelectric PLT thin films have excellent potential for use in ULSI DRAMs and as decoupling capacitors     

高压电力电容器的可听噪声研究

高压电力电容器是变电站高效输送电能或提高电能质量的重要设备,但是电容器在运行过程中所产生大量的声音可能影响周围环境,甚至干扰周围电子设备的正常运行。为此文中提出了一种能够基于参考电压预测变电站环境中高压电力电容器可听噪声的模型。实验室和现场实验的结果表明,基于该模型的噪声预测具有良好的准确度。     

Plasma-anodized thin-film capacitors for integrated circuits

This paper presents the characteristics of Al2O3capacitors formed by the relatively new technique of gaseous plasma anodization. This process can be incorporated into a thin-film deposition process cycle thereby providing the advantage of minimizing contamination possibilities. The formation technique is briefly described and device properties are presented in detail.     

Ceramic capacitors for hybrid integrated circuits

Ruggedness, wide capacitance range, high volumetric efficiency, and relatively attractive cost have been the main reasons for the popularity of ceramic chip capacitors. Continuing improvements in most of these categories promise to keep the ceramic chip in its present position of prominence. This article considers multilayer, single-layer, and screened-on configurations. In addition, relationships between size, capacitance, and cost are covered for three common ceramic formulations (NPO, W5R, and Z5U).     

Electrical behavior of decoupling capacitors embedded inmultilayered PCBs

We describe the modeling of prototype capacitors embedded in multilayered printed circuit boards. We present the design of these devices. We also report measurement and characterization results. The emphasis is on the modeling of via hole connections to the embedded capacitor, not on the technology of buried capacitors. Several designs have been compared with respect to their electrical behavior. In particular, several via hole configurations have been studied, because they are the main cause of parasitic behavior. With these buried capacitors, we obtained a reduction of the parasitic inductance of 80% compared to an equivalent discrete capacitor. This work has been carried out under a European Brite-EuRAM funded project COMPRISE (BE 96-3371). The objective of this project was to develop new materials and manufacturing processes to embed passive components (R, L, and C) within printed wiring structures fabricated from laminate materials. This technology enables the manufacture of space efficient and radio frequency (RF) optimal performing types of modules or board assemblies particularly suited to the market domain of portable and handheld communication and information technology products     

电源用电容器的选择

电容器是实现电源的宽范围电压和电流组合的最关键的无源元件之一。尽管每种电容器都能储存电能，但对于特定的应用来说，电介质技术在电容器的选择中起着重要的作用。电容器在电源中最重要的应用是在存储能量、浪涌电压保护、EMI抑制和控制电路等方面。我们可以通过图1了解到针对不同的应用领域，这些电介质技术彼此竞争或互为补充的关系。储能储能型电容器通过整流器收集电荷，并将存储的能量通过变换器引线传送至电源的输出端。电压额定值为40～450Vdc、电容值在220～150 000μF之间的铝电解电容器（如EPCOS公司的B43504或B43505）…     

Modeling and simulation of power electronic converters

This paper reviews some of the major approaches to modeling and simulation in power electronics, and provides references that can serve as a starting point for the extensive literature on the subject. The major focus of the paper is on averaged models of various kinds, but sampled-data models are also introduced. The importance of hierarchical modeling and simulation is emphasized     

用于激光无线能量传输的MPPT集成仿真系统

在激光无线能量传输（LWPT）中,传能激光波长、光功率和光电池温度对光电池的输出特性有显著影响,最大功率跟踪（MPPT）技术可解决上述等因素造成的功率失配问题,提升系统的DC-DC效率。构建了针对LWPT的MPPT集成仿真系统,耦合了波长、光功率和温度对GaAs光电池输出特性的综合影响,可以同时分析光电池在功率匹配、功率失配和MPPT调制等多种条件下的输出特性。基于该仿真系统,研究了光电池在不同波长、光功率和温度条件下的物理规律。波长增大时,在850 nm左右转换效率η_max达到最大值为50%,波长继续增大,光子能量小于GaAs禁带宽度导致η_max迅速下降。功率增大时,η_max基本不变,最大功率匹配电阻R_Lmax减小。温度升高时,η_max和R_Lmax均持续下降。此外,研究了光电池在功率失配时的输出特性,此时光电池的转换效率对比功率匹配时均有不同程度的下降。根据光电池的输出特性在仿真系统设计了MPPT电路,利用时间扰动算法进行最大功率跟踪。光电池在MPPT系统调制后均可工作在功率匹配时的最大功率点,且光电池能源利用率达到99.93%。研究结果对用于激光输能有重要指导意义。     

火电机组仿真一体化集成辅助系统的实现

针对现有的火电机组仿真机启动时操作的复杂,一套火电机组仿真机不能同时运行不同等级不同类型的火电机组仿真机,以及一套火电机组仿真机不能分成多组进行同时运行的问题,本集成辅助系统提供了一种用于火电机组仿真的一体化集成及其实现方法,它能够很好地解决上面提到的一些问题,使得启动操作变得简单。本集成辅助系统大大地方便了用户的使用,节省了时间,具有新颖性和实用性。在实际使用中证明本集成辅助系统提高了工作效率。     

Negative inductors and capacitors for SPICE simulation

It is explained that to simulate circuits containing negative inductances and capacitances using general-purpose simulators like SPICE, the networks under consideration must be transformed into suitable SPICE-compatible circuits. Criteria that the portion of the network containing the negative elements should meet are given. The SPICE network realizing these elements, when L and C are independent of frequency and time, is shown. An example of a Brune network is given     

Modeling ferroelectric capacitors for memory applications

The ferroelectric capacitor model is the foundation for accurate simulation of ferroelectric hysteresis loops and minor loops, transitions between the loops under arbitrary voltage patterns, transient responses of ferroelectric capacitors to short voltage pulses with widths in the nano-second range, and temperature behaviors of ferroelectric capacitors. The simulation speed is the same as that for a typical nonlinear capacitor. To the circuit designers, a ferroelectric capacitor is represented as a two-port device like a capacitor. The parameters are extracted easily and reliably by curve fitting the measured hysteresis loops. The model is applicable to fast circuit simulations for large ferroelectric memory designs.     

Gate-level power and current simulation of CMOS integrated circuits

In this paper, we present a new gate-level approach to power and current simulation. We propose a symbolic model of complementary metal-oxide-semiconductor (CMOS) gates to capture the dependence of power consumption and current flows on input patterns and fan-in/fan-out conditions. Library elements are characterized and their models are used during event-driven logic simulation to provide power information and construct time-domain current waveforms. We provide both global and local pattern-dependent estimates of power consumption and current peaks (with accuracy of 6 and 10% from SPICE, respectively), while keeping performance comparable with traditional gate-level simulation with unit delay. We use VERILOG-XL as simulation engine to grant compatibility with design tools based on Verilog HDL. A Web-based user interface allows our simulator (PPP) to be accessed through the Internet using a standard web browser     

并联混合型有源电力滤波器的建模仿真

为了达到抑制谐波污染的目的,采用了并联混合型有源滤波器的方法,并在Matlab／Simulink平台针对并联混合型有源滤波器的各个组成部分建立了仿真模型,并对该APF进行了详尽的动态仿真。通过频谱图分析数据结果,说明了谐波得到有效的补偿,获得了比较满意的仿真效果,为并联混合型有源滤波器应用于实际提供了设计依据。     

An overview to integrated power module design for high power electronics packaging

In recent years, there has been an explosion in demand for smaller and lighter, more efficient, and less expensive power electronic supplies and converters. There are a number of reasons for this recent necessity, ranging from the need for smaller and cheaper power converters for consumer electronics (such as laptop computers and cellular phones) to the need for highly reliable power electronics for such items as satellite and military craft power systems, which are required to be highly efficient, light in weight, smaller in volume, and low cost. This paper discusses the concept of Integrated Power Modules (IPMs), in which the electronic control circuitry and the high power electronics of the converter are integrated into a single compact standardized module. The advantages and disadvantages of such an approach will be discussed in reference to the current industry standard for power electronics design and packaging. The researchers will then take the readers through the IPM design, including basic circuit topology layout, module fabrication processes, and finally thermal considerations.     

Tantalum oxide capacitors for GaAs monolithic integrated circuits

The performance of a high-yield tantalum oxide capacitor for use in GaAs monolithic microwave integrated circuits is described. The integral metal-insulator-metal sandwich structure is reactively sputter-deposited at low temperatures, compatible with a photoresist lift-off process, on semi-insulating GaAs substrate. Dielectric constants of 20-25 were achieved in the capacitors fabricated. An initial application of this process as an interstage coupling capacitor for a two-stage preamplifier is given.     

Electro-thermal characterization and simulation of integrated multi-trenched XtreMOSTM power devices

This paper presents a new methodology to characterize and simulate the electro-thermal aspects of packaged power drivers using multi-trenched XtreMOS^TM devices. Electrical device data is collected by pulsed and DC measurements. Thermal data is collected through on-chip sensors and through a full surface high resolution transient interferometric mapping (TIM). For the first time a data driven segmented electro-thermal transient model is proposed to accurately describe the thermal profile behavior for the mutli-trenched devices. Further investigations of the thermal heating impact on the driver due to the low thermal conductivity of the trenches (SiO₂) have been carried out. The results of the investigations have been discussed for two different gate to source (VGS) bias conditions: VGS below the temperature compensation point (TCP), which is a bias condition that might lead to a thermal runaway, and VGS above TCP.     

Grounding of capacitors in integrated circuits

Fabrication techniques indicate that it is easier to obtain earthed capacitors than unearthed ones in integrated circuits. To take advantage of these techniques, a method to earth all capacitors, by replacing them with earthed gyrator-capacitor combinations, is described here.     

太阳能主流乘用车动力总成建模及仿真

文中提出一款以太阳能为主要能源的新能源主流乘用车,以单轴并联混合动力汽车底盘为基础,采用燃油发动机和电动/发电机为汽车的动力系统,搭载薄膜太阳能电池板和蓄电池为能源系统。基于ADVISOR 2002仿真软件,搭建单轴并联混合动力汽车模型,对发动机和电机参数进行选择,并采用电机辅助控制策略。仿真结果表明,整车的动力性能达到传动主流乘用车的标准。在城市短途工况下,太阳能主流乘用车具有低使用成本、零排放的优势。