最高振荡频率为46 GHz的GaInP／GaAs异质结双极晶体管

最高振荡频率为４６　ＧＨｚ的ＧａＩｎＰ／ＧａＡｓ异质结双极晶体管钱峰，陈新宇，肖秀红，姚晓峨，周天舒，潘菁，陈效建（南京电子器件研究所，２１００１６）齐鸣，李爱珍（中科院上海冶金所，２０００５０）Ａｆ＿（ｍａｘ）＝４６ＧＨｚＧａＩｎＰ／ＧａＡｓＨＢＴ...     

异质结双极晶体管的最新进展

八十年代以来，微波半导体技术的迅速发展，应用领域不断扩大，为适应微波、毫米波半导体技术的发展，近年来已出现不少新结构、新器件，如异质结双极晶体管（HBT）、高电子迁移李晶体管（HEMT）、双极反型沟道场效应晶体管（BiCFET）调制掺杂场效应晶体管（MOFET）、谐振隧道晶体管（RTT）、负阻效应晶体管（NBERFET）、毫米波混合隧道雪崩渡越时间（MITATT）二极管、超导器件及量子器件等。本文主要叙述异质结双板晶体管的最新进展及其应用。     

fT为75GHz的SiGe基区异质结双极晶体管

报道了具有最高单位电流增益截止频率（fT)的Si异质结双极晶体管（HBT）的制作，器件的fT值达75GHz，集电极－基极偏压1V，本征基区层电阻（Rbi)17kΩ/□，发射极宽0．9um，该器件用SiGe作基底材料，采用多发射极双极工艺制作，其75GHZ的性能指标几乎比Si双极晶体管的速度提高一倍，45nm基区中的Ge是缓变的，这样就产生了约为20kV/cm的漂移电场，因而本征渡越时间仅为1．9ps。     

SiGe／Si异质结双极晶体管

介绍了ＳｉＧｅ／Ｓｉ异质结双极晶体管的特点，自对准ＨＢＴ、非自对准ＨＢＴ的结构以及通过低温热循环、ＳＰＯＴＥＬ、重硼掺杂等工艺使ｆＴ从２０ＧＨｚ增至１１０ＧＨｚ的方法。     

准泡发射区基区SiGe异质结双极晶体管

本文报道一种新开发的与Ｓｉ平面工艺兼容的准泡发射区基区工艺，以及由此工艺制备的适于大功率微波应用的ＳｉＧｅ异质结双极晶体管（ＨＢＴ）．ＳｉＧｅＨＢＴ的电流增益为５０，ＢＶＣＢＯ为２８Ｖ，ＢＶＥＢＯ为５Ｖ．在９００ＭＨｚ共射Ｃ类工作状态下，连续波输出功率５Ｗ，集电极转化效率６３％，功率增益７．４ｄＢ．     

InP／InGaAs异质结双极晶体管研究

阐述了ＩｎＰ／ＩｎＧａＡｓ异质结双极晶体管的最新发展动态，重点讨论了ＨＢＴ的结构与性能以及ＨＢＴ ＩＣ的高速性能与可靠性问题。     

自对准AlGaAs/GaAs微波异质结双极晶体管(HBT)

本文提出了一种制作HBT采用的垂直台面结构自对准工艺.利用该工艺及对A1GaAs/GaAs具有高选择比的化学湿法腐蚀剂,已研制成微波HBT.发射区台面与基极电极间隙为0.1μm,最大直流电流增益为40,截止频率f_T为10GHz.     

硅锗基区异质结双极晶体管的研究进展

叙述了硅锗基区异质结双极晶体管的研究发展现状，分析了该晶体管的结构机理，特点及制造技术，并且阐述了该器的发展前景。     

Heavily doped base GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy

The first demonstration of a GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy is reported. A common-emitter current gain of 30 at a current density of 110 A/cm/sup 2/ is obtained for a beryllium base doping as high as 8*10/sup 19/ cm/sup -3/. The base sheet resistance of 140 Omega / Square Operator is among the lowest reported values.<>     

A CDMA InGaP/GaAs-HBT MMIC Power Amplifier Module Operating With a Low Reference Voltage of 2.4 V

This paper describes circuit design and measurement results of our newly developed InGaP/GaAs-HBT MMIC power amplifier (PA) module which can operate with 2.4-V low reference and low supply voltages of its on-chip bias circuits. To achieve the low-reference voltage operation, the following two new circuit design techniques are incorporated into the power amplifier: 1) AC-coupled, divided power stage configuration with two different kinds of bias feeding (voltage and current drive and only current drive) and 2) successful implementation of a diode linearizer built in the power stage. Theses two techniques allow the PA to offer smooth output transfer characteristics over a wide temperature range. Measurement results done under the conditions of 900 MHz, a 3.5-V collector voltage for power stage, and 2.4-V reference and collector voltages for the bias circuits show that the PA module meets J-/W-CDMA power and distortion requirements sufficiently over a wide temperature range from -10degC to 90degC while keeping a low quiescent current of less than 65 mA. For J-CDMA modulation, the module can deliver a 27.5-dBm output power (P_out), a 40% PAE, and a -50-dBc ACPR, while a 28-dBm P_out, a 42% PAE, and a -42-dBc ACLR are achieved for W-CDMA modulation.     

Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 × 10¹⁵ cm⁻² has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.     

Microwave performance of a self-aligned GaInP/GaAs heterojunctionbipolar transistor

The microwave performance of a self-aligned GaInP/GaAs heterojunction bipolar transistor (HBT) is presented. At an operating current density of 2.08×10⁴ A/cm², the measured cutoff frequency is 50 GHz and the maximum oscillation frequency extrapolated from measured unilateral gain and the maximum available gain are 116 and 81 GHz, respectively, all using 20-dB/decade slopes. These results are compared with other reported high-frequency performances of GaInP HBTs. In addition, these results are compared with AlGaAs/GaAs HBTs having a similar device structure     

Thermal stability of C-doped GaAs/AlAs DBR structures

Thermal stability of heavily carbon-doped and undoped DBRs has been investigated by reflectivity measurements and Raman spectroscopy. These analytical techniques are used to study the effect of heavy C-doping on Al–Ga interdiffusion during subsequent high-temperature anneals. Reflectivity spectra around the DBR stop-band wavelength clearly show that the growth-rate is reduced due to etching associated with the CBr₄ precursor used, but they also indicate that no Al–Ga interdiffusion that could significantly degrade the DBR performance takes place for any samples during annealing. The results are supported by Raman spectra, which indicate the positions of the LO and LOPC modes do not change when the DBRs are annealed, whether the DBRs are doped or not. Simulations of Al–Ga interdiffusion at GaAs/AlAs DBR interfaces indicates that intermixing up to ～15 nm on either side of each interface will not affect the reflectivity of the DBR stack significantly. The observed small changes in the stop-band central wavelength and peak reflectivity due to annealing is most likely a consequence of increased surface roughness resulted from annealing.     

Si掺杂的AlGaInP/GaInP多量子阱光学特性

低压MOCVD方法生长了掺Si与不掺Si的AlGaInP/GaInP多量子阱结构,运用X射线双晶衍射与光荧光技术研究了掺Si对量子阱性能的影响.测试结果表明掺Si使量子阱的生长速度增加,掺Si量子阱的光荧光强度比未掺Si量子阱的光荧光强度改善了一个数量级.     

A high-frequency GaInP/GaAs heterojunction bipolar transistor withreduced base-collector capacitance using a selective buriedsub-collector

A C-doped GaInP/GaAs HBT using a selective buried sub-collector has been fabricated by two growth steps. The device was fabricated with minimum overlap of the extrinsic base and the sub-collector region to reduce base-collector capacitance. The experiment shows that the base collector capacitance is reduced to about half of that of an HBT without selective buried sub-collector while the base resistance remains unchanged. A current gain of 35, f_T of 50 GHz and f_max of 140 GHz are obtained with this technology     

Design and optimization of a monolithic GaInP/GaInAs tandem solar cell

We have theoretically calculated the photovoltaic conversion efficiency of a monolithic dual-junction GaInP/GaInAs device,which can be experimentally fabricated on a binary GaAs substrate.By optimizing the bandgap combination of the considered structure,an improvement of conversion efficiency has been observed in comparison to the conventional GaInP_2/GaAs system.For the suggested bandgap combination 1.83 eV/1.335 eV,our calculation indicates that the attainable efficiency can be enhanced up to 40.45%(30...     

MOVPE growth of AlGaAs/GaInP diode lasers

GaAs-based diode lasers for emission wavelengths between 800 nm and 1060 nm with AlGaAs-cladding and GaInP-waveguide layers were grown by MOVPE. For wavelengths above 940 nm broad area devices with InGaAs QWs show state-of-the-art threshold current densities. Ridge-waveguide lasers fabricated by selective etching achieve 200 mW CW monomode output powers. (In)GaAsP QW-based diode lasers with an emitting wavelengths around 800 nm suffer from problems at the upper GaInP/AlGaAs interface. Asymmetric structures with a lower AlGaAs/GaInP and an upper AlGaAs/AlGaAs waveguide not only avoid this interface but also offer better carrier confinement. Such structures show very high slope efficiencies and a high T₀. Maximum output powers of 7 W CW are obtained from 4 mm long devices.