基于电荷流动晶体管的新型气敏传感器

在通常的MOSFET基础上,根据电荷流动电容器原理,设计了一种新型的栅区开槽的电荷流动场效应管(CFT),并以一种新型有机半导体材料--三明治型稀土金属元素镨双酞菁配合物(Pr[Pc(OC8H17)8]2为气敏材料,取代栅极中的间隙位置.利用LB超分子薄膜技术,将Pr[Pc(OC8H17)8]2以1∶3的配比与十八烷醇(OA)混合的LB多层膜(Pr[Pc(OC8H17)8]2-OA)拉制在CFT上,形成了一种新型的具有CFT结构的LB膜NO2气敏传感器.当对该器件加一栅压VGS时(大于阈值电压),由于高阻敏感膜充电达VGS需要一段时间,因而漏电流出现延迟现象.这种弛豫与NO2气体浓度有关,室温下探测灵敏度可达5ppm NO2.     

一种新型气敏传感器的研究

本文以一种新型有机半导体材料——三明治型稀土金属元素镨双酞菁配合物(Pr ₂) 为气敏材料,利用Langmuir-Blodgett(LB)超薄膜技术,将Pr ₂以1:3的配比与十八烷醇(OA)的混合LB多层膜(Pr ₂/OA)拉制在自行设计的场效应晶体管上,形成了一种新型的以LB膜取代通常的MOSFET中栅金属的化学场效应管器件.将该器件放入NO₂气体中,随着气体浓度和LB膜层数的变化,器件的漏电流I_DS将产生0.05×10^-6A~1.5×10^-6A的变化,探测灵敏度可达到5ppmNO₂,这种气敏传感器的气敏特性受到FET的电流放大作用和LB膜有序性的影响.     

一种二次镀银光纤光栅气敏传感器

为了更加有效地实时检测井下硫化氢(H₂S)气体,提出一种在光纤Bragg光栅(FBG)上二次 涂镀银(Ag)膜的光纤气敏传感器。一方面,采用二次镀Ag的制备方法增加Ag膜的均匀性,提 高气敏元件的灵敏度;另一方面,采用特殊的油气分离、流线型设计,保证了H₂S气体与 气敏元件的有效接触,实 现井下低浓度气体的实时检测。根据实验,当镀Ag的FBG气敏元件置于H₂S气体中时,传入 光 纤的倏逝波能量减小,反射光谱的峰值功率下降2.0dBm。     

栅脉冲下AlGaN/GaN HEMT电流崩塌效应研究

源于AlGaN/GaNHEMT器件的大量测试分析发现,栅脉冲条件下漏极电流比直流情况下减小了47%;随着信号频率的改变,漏极电流按μnCoxW[α (0.13 0.64f)VGS (0.13 0.32 f)VGS2](VGS-Vth)2/L的规律变化;脉冲信号宽度对漏电流崩塌影响较小.基于实验结果的理论分析认为,电子从栅极注入到栅漏之间并被表面态所俘获,在沟道中形成增加的耗尽层,使得沟道二维电子气浓度减小,从而导致形成电流崩塌效应的主要原因之一.该结论有助于AlGaN HEMT器件脉冲条件下电流崩塌效应理论解释和器件应用.     

高温氧化对SiC MOS器件栅氧可靠性的影响

SiC金属氧化物半导体(MOS)器件中SiO2栅氧化层的可靠性直接影响器件的功能.为了开发高可靠性的栅氧化层,将n型4H-SiC (0001)外延片分别在1 200,1 250,1 350,1 450和1 550℃5种温度下进行高温干氧氧化实验来制备SiO2栅氧化层.在室温下,对SiC MOS电容样品的栅氧化层进行零时击穿(TZDB)和与时间有关的击穿(TDDB)测试,并对不同干氧氧化温度处理下的栅氧化层样品分别进行了可靠性分析.结果发现,在1 250℃下进行高温干氧氧化时所得的击穿场强和击穿电荷最大,分别为11.21 MV/cm和5.5×10-4 C/cm2,势垒高度(2.43 eV)最接近理论值.当温度高于1 250℃时生成的SiO2栅氧化层的可靠性随之降低.     

氧化石墨烯覆盖电极的双紫外光离子化传感器

对光离子传感器的结构进行了优化研究,针对光离子化传感器灯面残留物干扰问题采取了自清洁双紫外灯式传感器的新型结构,同时利用有限元法对传感器气流场进行仿真实验。通过对仿真实验的结果进行分析,对微型传感器进行了进一步的气路优化,并最终确定选择轴向流动结构的电离室。采取新型纳米材料氧化石墨烯对传感器的收集极板进行表面修饰,改善了光离子化传感器的气敏特性,提高了灵敏度。通过实验分析,详细阐述了传感器的各项性能指标,测定传感器针对甲苯的最低检测限为2.5×10~(-7),并对线性度响应进行了分析,线性相关系数达到了0.993,通过实验验证了双紫外传感器对整体气敏特性的提升,为可挥发性有机物(VOC)气体检测提供了理想的检测单元。     

h-BN/Al2O3栅介质氢终端金刚石场效应晶体管

金刚石是实现高频大功率器件的理想候选材料,但是其较低的载流子迁移率制约了器件的性能,六方氮化硼(h-BN)作为氢终端金刚石场效应晶体管(FET)的栅介质材料有望提升金刚石材料的载流子迁移率。利用商业化大面积h-BN材料,制备了h-BN/Al₂O₃栅介质的氢终端金刚石FET,h-BN/Al₂O₃/氢终端金刚石材料的载流子迁移率得到提升,达到186 cm²/(V·s)。相较于Al₂O₃栅介质的金刚石FET,h-BN/Al₂O₃栅介质的金刚石FET最大饱和电流密度和最大跨导均得到提升,分别为141 mA/mm和9.7 mS/mm。通过电容-电压(C-V)测试计算了栅介质和金刚石间界面固定电荷密度和陷阱密度,h-BN/Al₂O₃栅介质的金刚石FET界面负固定电荷密度为5.4×10¹² cm^-2·eV^-1...     

SnO_2厚膜与基板附着强度及气敏性能研究

通过溶胶-凝胶法制备了SnO2纳米粉末,用丝网印刷法制备了以氧化铝陶瓷为基板的SnO2厚膜。分别采用SEM、XRD及电化学工作站表征了SnO2的结构与形貌并测试了其气敏性能。结果表明,所制备的SnO2平均颗粒粒径约为60 nm,为四方相结构。与SnO2直接附着在氧化铝基板的厚膜(样品A)相比,以玻璃粉作为SnO2和氧化铝基板粘结剂的厚膜(样品B)附着强度更高,解决了SnO2与氧化铝基板附着强度差的问题;以玻璃粉为粘结剂制备的厚膜对H2具有稳定的气敏性能。     

特制红外窄带干涉滤光片光学性能的研究

资料[1]提出一种制备大相位跃变色散的介质反射板的方法。后来资料[2]研制了这种反射板,其制备方法如下。在由折射率高(H)低(L)交替的λ/4膜组成的典型多层膜系上涂以折射率相差不大l和h交替的1/4膜层。此多层膜系可简略写成:     

150 V电荷耦合功率MOSFET的仿真

电荷耦合是适用于中等电压功率MOSFET设计的先进设计理念之一,该设计思想旨在改善器件阻断态下的电场分布从而提高耐压。针对150 V电荷耦合功率MOSFET双外延漂移区(分别为电荷耦合区N1区与非耦合区N2区)电荷匹配问题进行了仿真优化研究,结果表明:N1区和N2区浓度分别约为2.2×1016cm-3和4.5×101 5cm-3时,电场分布更加均匀、耐压更高,且比导通电阻仅为1.306 mΩ·cm2,即击穿电压和比导通电阻间达到最佳匹配。同时,还针对器件不同槽深进行了静态特性和动态特性的整体仿真优化研究,结果表明:槽深在7~9μm时,器件满足耐压要求且击穿电压随双漂移区掺杂浓度匹配程度变化较为平稳。最后,优化结构与传统槽栅MOSFET相比,其栅漏电容和栅电荷大幅降低,器件优值降低了约87%。     

聚对苯撑苯并双(口恶)唑发光及其器件制备

采用光谱技术,研究了聚对苯撑苯并双(口恶)唑(PBO)溶液的光敏发光特性,并用相对法估算出溶液发光效率在50%范围.结合光谱技术、半导体电学和电化学等研究手段,具体研究了以PBO为发光层的单层电致发光器件,研究结果显示,电致发光与薄膜的光致发光有具有相同的发光中心,峰值位于510 nm左右.同时发现,由于存制备过程中不同处理条件使得不同厚度薄膜残留的掺杂物质浓度不同,从而引起薄膜的导电性的不同.使得器件的阈值场强随PBO厚度的减小而逐渐增加.     

系统级封装新型埋入式电源滤波结构的研究

在高密度小尺寸的系统级封装(SiP)中,对供电系统的完整性要求越来越高,多芯片共用一个电源网路所产生的电压抖动除了会影响到芯片的正常工作,还会通过供电网路干扰到临近电路和其他敏感电路,导致芯片误动作,以及信号完整性和其他电磁干扰问题.这种电压抖动所占频带相当宽,几百MHz到几个GHz的中频电源噪声普通方法很难去除.结合埋入式电容和电源分割方法的特点,提出一种新型高性能埋入式电源低通滤波结构直接替代电源/地平面.研究表明,在0.65～4GHz的频带内隔离深度可达-40～75 dB,电源阻抗均在0.25ohm以下,实现了宽频高隔离度的高性能滤波作用.分别用电磁场和广义传输线两种仿真器模拟,高频等效电路模型分析这种低通滤波器的工作原理以及结构对隔离性能的影响,并进行了实验验证.     

Emerging interconnects: a state-of-the-art review and emerging solutions

Aluminium was a primary material for interconnection in integrated circuits (ICs) since their inception. Later, copper was introduced as interconnect material which has better metallic conductivity and resistance to electromigration. As the aggressive technology scaling continues, the copper resistivity increased because of size effects, which causes increase in delay, power dissipation and electromigration. The need to reduce the resistor-capacitor??????? delay, dynamic power utilisation and the crosstalk commotion is as of now the fundamental main impetus behind the presentation of new materials. The purpose of this paper is to do a survey of interconnect material used in IC from introduction of ICs to till date. This paper studies and reviews new materials available for interconnect application which are optical interconnects, carbon nanotube (CNT), graphene nanoribbons (GNRs) and silicon nanowires which are alternatives to copper. While doing a survey of interconnect material, it is found that multiwalled CNTs, multilayer GNR and mixed CNT bundles are promising candidates and are ultimate choice that can strongly address the problems faced by copper but on integration basis copper would last for coming years.     

Arsenic deposition as a precursor layer on silicon (211) and (311) surfaces

We investigate the properties of arsenic (As) covered Si(211) and Si(311) surfaces by analyzing data from x-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED) images. We then create a model using total surface energy calculations. It was found that both Si(211) and Si(311) had 0.68±0.08 surface As coverage. Si(211) had 0.28±0.04 Te coverage and Si(311) had 0.24±0.04 Te coverage. The Si(211) surface replaces the terrace and trench Si atoms with As for a lower surface energy, while the Si edge atoms form dimers. The Si(311) surface replaces all terrace atoms and adsorbs an As dimer every other edge site. These configurations imply an improvement in the mean migration path from the bare silicon surface by allowing the impinging atoms for the next epitaxial layer, tellurium (Te), to bind at every other pair of edge atoms, and not the step terrace sites. This would ensure a nonpolar, B-face growth.     

光子晶体微腔发光二极管

光子晶体微腔因其具有增强自发辐射、定向输出和单模工作的能力而受到广泛关注。介绍了光子晶体微腔发光二极管的基本原理、设计、特性、制作及其典型器件。     

Comparative study of maximum power point tracking techniques for hybrid renewable energy system

The power generation demand is increasing day-by-day throughout the world, therefore, the use of hybrid systems becomes a significant solution. The hybrid renewable energy system (HRES) is used for delivering power in various regions in order to overcome intermittence of wind and solar resources. Because of increasing environmental problems, for example, greenhouse gas emission and energy cost have interested novel research into substitute methods in favour of electrical power generation. Maximum Power Point Tracking (MPPT) control method is a vast deal of novel research used for enhancing the efficiency of HRES. The authors have revealed that the hybrid techniques i.e. Global MPPT, fuzzy-neuro systems, Adaptive Neuro-Fuzzy Inference System (ANFIS), Perturbed and Observe (P&O) + Adaptive Neural Network (ANN) etc. can provide best results as compared to other MPPT control methods. This paper offering a state of art review of MPPT control techniques for HRES.     

用于单光子TOF测量的时间-幅度变换器

基于新型共源共栅电流源的积分方法,设计了一种用于单光子飞行时间(TOF)测量的时间-幅度变换器(TAC).该方法有效简化了 TAC电路结构,减小了 TAC占用面积,显著提高了TOF的满量程范围(FSR).采用0.18 μm标准CMOS工艺设计.集成TAC的单光子探测器像素单元的填充因子可达到26.8％.后仿真结果表明,...     

Joint estimation of TOA and DOA in IR-UWB system using a successive propagator method

Impulse radio ultra-wideband (IR-UWB) ranging and positioning require accurate estimation of time-of-arrival (TOA) and direction-of-arrival (DOA). With receiver of two antennas, both of the TOA and DOA parameters can be estimated via two-dimensional (2D) propagator method (PM), in which the 2D spectral peak searching, however, renders much higher computational complexity. This paper proposes a successive PM algorithm for joint TOA and DOA estimation in IR-UWB system to avoid 2D spectral peak searching. The proposed algorithm firstly gets the initial TOA estimates in the two antennas from the propagation matrix, then utilises successively one-dimensional (1D) local searches to achieve the estimation of TOAs in the two antennas, and finally obtains the DOA estimates via the difference in the TOAs between the two antennas. The proposed algorithm, which only requires 1D local searches, can avoid the high computational cost in 2D-PM algorithm. Furthermore, the proposed algorithm can obtain automatically paired parameters and has better joint TOA and DOA estimation performance than conventional PM algorithm, estimation of signal parameters via rotational invariance techniques algorithm and matrix pencil algorithm. Meanwhile, it has very close parameter estimation to that of 2D-PM algorithm. We have also derived the mean square error of TOA and DOA estimation of the proposed algorithm and the Cramer-Rao bound of TOA and DOA estimation in this paper. The simulation results verify the usefulness of the proposed algorithm.     

超宽带脉冲信号的光学生成方法研究

近年来超宽带(UWB)通信技术迅猛发展,在测量、雷达技术、民用和军事无线通信中有着重要的应用,UWB-over-fiber技术已经成为目前研究的热点,其中就包括UWB脉冲信号的产生方法。区别于传统的电子学方法,光子学产生方法不受电子瓶颈制约,可以实现很高的带宽,并且具有抗电磁干扰、重量轻、结构紧凑的优点。通过对比国内外本领域研究成果,讨论及总结了以下三种原理的UWB脉冲信号的光学生成方法:1)相位调制-强度调制转换(PM-IM);2)半导体光放大器(SOA)的非线性效应;3)频谱塑形和色散所致频域-时域映射,然后对各种方案进行了对比分析。     

多孔硅发光机制的分析

从量子力学的基本理论出发讨论了量子限制效应，推导出多孔硅有效禁带宽度增量并用量子限制效应和表面态及其物质在发光中作用的理论解释了ＰＳ光致发光的实验现象。