Al2O3/BaxSr1-xTiO3复相陶瓷的凝胶注模制备与微观结构

采用凝胶注模工艺制备出了Al2O3/Ba0.6Sr0.4TiO3复相陶瓷坯体.重点研究了料浆的流变学特性和凝胶化机理.研究表明,Al2O3/Ba0.6Sr0.4TiO3复相陶瓷水基料浆呈现“剪切变稀“行为,单体和交联剂含量和引发剂、催化剂的加入量都对固化速度有着直接的影响.在对Al2O3/Ba0.6Sr0.4TiO3烧结体研究时发现:由于Ba0.6Sr0.4TiO3的加入,内部晶粒最终都形成规则的平面六角结构.     

凝胶注模成型法制备高纯细晶粒氧化铝陶瓷

介绍了采用高纯超细氧化铝粉料，用凝胶注模成型方法制备高纯细晶粒氧化铝陶瓷的工艺，采用适当的分散剂，制备出了固相体积含量为57％，具有良好流动性的氧化铝浆料。在较低的温度(1480～1510℃)下利用无压烧结工艺，制备了弯曲强度为516MPa，断裂韧性为6．40MPa．m^1/2，微观结构均匀细晶粒的氧化铝陶瓷。     

凝胶注模成型氧化铝陶瓷反射体的制备

以微米级氧化铝为原料,采用AM-MBAM凝胶体系,制备出了流动性良好、高固相体积比的浆料,然后采用凝胶注模成型工艺制备出了中空氧化铝陶瓷反射体。研究了分散剂、引发剂、单体浓度及固相含量等关键因素对凝胶注模成型氧化铝陶瓷反射体的影响。结果表明:当分散剂、引发剂、单体的质量分数分别为0.4%,0.08%,7%时,浆料的固相体积分数为55%,黏度达到710 mPa.s,并可制备出表观形貌好,结构致密的氧化铝陶瓷反射体。     

精细氧化铝陶瓷水基凝胶注模成型工艺

研究高性能氧化铝陶瓷的水基凝胶注模成型过程,探讨了pH值、分散剂、有机单体、交联剂以及球磨等诸因素对料浆浓悬浮体的流变性的影响。通过控制成型过程中的温度(50~70℃)和时间等因素,成功制出了固相含量达58%的料浆,以及强度20MPa以上,显微结构十分均匀的坯体。发现该工艺所制坯体的一种新颖特性——坯体可以在胶状柔韧态(吸水)和坚硬态(脱水)之间反复变化。它将大大改善陶瓷部件的可加工性,提高其生产效率。     

水基料浆注模凝胶法制备氧化铝陶瓷高压真空开关管壳

采用水基料浆注模凝胶法制备出了高质量的96％Al2O3瓷高压真空开关管壳。解决了高固相含量水基料浆的配制，注模凝胶化和脱模操作等问题。研究结果表明，其尺寸精度和表面质量良好，密度达到3．79g/cm^3，多项机电性能均超过产品技术要求。证实了水基料浆注模凝胶法制备高压真空开关管壳是一种新的低成本制备技术，值得推广应用。     

凝胶注模法制备热释电PLCT陶瓷研究

为探索无毒性凝胶注模成型法在制备热释电陶瓷方面中的应用,对Pb0.8La0.1Ca0.1TiO3(PLCT)热释电材料的成型实验、水解液配置、烧结温度对介电性能和热释电性能的影响进行了研究。结果表明:乙醇含量为3%,水解液pH值为2,烧结温度为1 150℃时,烧结成的PLCT热释电陶瓷性能最优,其平均热释电系数达8.0×10-4C/m2.℃,而探测率优值高达7.65×10-5Pa-0.5。     

Al2O3-SiO2/纤维素复合气凝胶的制备及其阻燃性能

针对纤维素气凝胶隔热性能差、易燃烧等问题,基于液氮定向冷冻及真空冷冻干燥技术,以低成本、环境友好的微晶纤维素为原材料,Al₂O₃-SiO₂溶胶为阻燃剂,去离子水为溶剂,加入硼酸作为催化剂控制共水解进程,制备出隔热阻燃性能良好的Al₂O₃-SiO₂/纤维素复合气凝胶。采用扫描电子显微镜、傅里叶变换红外光谱仪、热重分析仪、锥形量热仪等研究了Al₂O₃-SiO₂溶胶含量对材料结构与性能的影响,并分析了复合气凝胶的阻燃机制。结果表明,随着Al₂O₃-SiO₂溶胶含量的增加,Al₂O₃-SiO₂/纤维素复合气凝胶从蜂窝状结构向多孔三维网络结构转变,孔径减小。Al₂O₃-SiO₂溶胶与微晶纤维素溶液体积比为2...     

Bi1.5Zn1.0Nb1.5O7/Ba0.5Sr0.5TiO3复合薄膜介电性能的频率特性研究

采用射频磁控溅射法在蓝宝石基片上制备了Bi1.5Zn1.0Nb1.5O7(BZN)/Ba0.5Sr0.5TiO3(BST)双层复合薄膜,并研究了该薄膜在100 kHz~6 GHz频率范围内的介电性能。研究结果表明,BZN/BST复合薄膜的介电性能具有良好的频率稳定性。该复合薄膜的介电常数在研究的频率范围内基本与频率无关;其介电损耗在频率低于1 GHz时与频率无关,在频率高于1 GHz时随频率的上升而略微增大;薄膜在研究的频率范围内具有稳定的介电调谐率。     

低温常压烧成工艺制备Al2O3-SiC复相材料

将6H-SiC和α-Al2O3以质量比7:3混合,添加质量分数0~10%的MgO-CaO作为烧结助剂,球磨后的粉体压制成生坯,在1 200℃预氧化1 h后在氢气氛下常压烧结1 h制备Al2O3-SiC复相材料。研究了烧成温度和MgO-CaO含量对该复相材料烧结性能和相组成的影响。结果表明:1 500℃下,随着烧结助剂含量的增加,烧结致密性明显提高,当烧结助剂质量分数为10%时,显气孔率降至0.1%。预氧化时,添加烧结助剂MgO-CaO,方石英和α-Al2O3与之反应,生成CaAl2Si2O8和Mg2Al4Si5O18,促进6H-SiC的进一步氧化。烧成过程中,CaAl2Si2O8和MgAl2O4溶解生成玻璃相促进烧结,同时α-Al2O3从玻璃相中析出,1 500℃烧结试样所含物相为6H-SiC和α-Al2O3。     

Li2CO3掺杂BST的制备及复合薄片的能量收集研究

将水基流延技术与低温烧结陶瓷技术相结合,用于BST挠曲电陶瓷的研制和能量的收集。为了降低BST的烧结温度,在BST水基流延浆料中添加了质量分数1%～4%的Li₂CO₃,将浆料流延成薄片后进行烧结。研究了Li₂CO₃掺杂量对烧结温度的影响以及BST薄片厚度对材料电性能的影响。实验结果表明,适量的Li₂CO₃掺杂能够将BST的烧结温度降低约250℃。在烧结后的薄片两面涂上银电极和适当厚度的PDMS,得到“三明治结构”的BST复合薄片,用于介电、挠曲电测试和能量收集实验。当Li₂CO₃掺杂量为质量分数2%时,300μm厚的BST复合薄片在1100℃烧结后介电性能最优,其介电常数为3200,介质损耗为0.05。而200μm厚的复合薄片表现出最高的横向挠曲电系数,达到0.24μC/m。此外,40μm厚的复合薄片表现出最好的电流输出能力,达到1.2 nA。     

A new high performance phase shifter using BaxSr1-xTiO3 thin films

In this paper, a new device topology has been proposed to implement parallel plate capacitors using Ba_xSr_1-xTiO₃ (BST) thin films. The device layout utilizes a single parallel capacitor and minimizes conductor losses in the base electrode. The new design simplifies the monolithic process and overcomes the problems associated with electrode patterning. An X-band 180° phase shifter has been implemented using the new device design. The circuit provided 240° phase shift with an insertion loss of only 3 dB at 10 GHz at room temperature. We have shown a figure of merit 93°/dB at 6.3 GHz and 87°/dB at 8.5 GHz. To our knowledge, these are the best figure of merit results reported in the literature for distributed phase shifters implemented using BST films at room temperature     

Ce-Ba_xSr_(1-x)Nb_2O_6全息照相性能与应用研究

本文报导 Ce-Ba_xSr_(1-x)Nb_2O_6单晶的全息照相性能及某些应用试验的结果。晶体组分配比、Ce 杂质含量、曝光功率及晶面取向等因素都对全患照相性能有影响。Ce-Ba_xSr_(1-x)Nb_2O_6的最高衍射效率可大于90%;当衍射效率为10%时,曝光量为14毫焦耳/厘米~2。用 Ar~+激光记录时,光存储灵敏度较高,用 He-Ne 激光亦可记录、读出和擦除。     

Tunable Solidly Mounted Thin Film Bulk Acoustic Resonators Based on BaxSr1−xTiO3 Films

Electrically tunable solidly mounted thin film bulk acoustic resonators based on Ba_xSr_1-xTiO₃ films are reported for the first time. The films are acoustically isolated from the silicon substrate by a Bragg reflector stack. Applying DC bias induces piezoelectric effect and an acoustic resonance at approximately 4 GHz. Under 10 V applied DC bias the resonance frequency of the resonators based on Ba_0.25Sr_0.75TiO₃ films is tuned 1.2% to lower frequencies. The Q-factor of these resonators is approximately 120, and the electromechanical coupling coefficient is 0.5%. The resonant frequency of the BaTiO₃ based resonators shifts upwards 1.3% under 10 V DC bias, and the -factor is approximately 30, with an electromechanical coupling coefficient of 6.2%.     

MgO-Y_2O_3对热压烧结Al_2O_3性能的影响

以高纯的硫酸铝氨分解的无定形Al2O3为原料,MgO-Y2O3为烧结助剂,在N2气氛下热压烧结制备Al2O3陶瓷。研究了烧结助剂掺量对Al2O3材料的相组成、显微结构、烧结性能、力学性能、热导率和介电性能的影响。结果表明:所制Al2O3陶瓷具有细晶的显微结构特征和超高的抗弯强度。随着MgO-Y2O3掺量的增加,晶粒尺寸、抗弯强度和热导率先增大后减小,而介电损耗则呈现先减小后增大的变化规律。当MgO和Y2O3掺量均为质量分数2%时,Al2O3陶瓷呈现为较佳的综合性能:抗弯强度达最大值为603 MPa,热导率为36.47 W.m–1.K–1,介电损耗低至6.32×10–4。     

Layered Al2O3-TiO2 compositedielectric resonators

Aluminium oxide displays a very low tanδ at microwave frequencies. It also possesses a remarkably high thermal conductivity, ideal for heat dissipation in high power satellite filters. However, its temperature coefficient of the resonant frequency (τ_f) is approximately 60 ppm/K. It is shown that the application of a film of titanium oxide which has a T_f of opposite sign (45O ppm/K) produces a composite in which the τ_f can be tuned to be zero over a wide temperature range. The tanδ of the composite at zero T_f is 3.3×10⁵ (Q=30000) at room temperature and at 10 GHz     

Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator

The structural and electrical characteristics of a novel nanolaminate Al₂O₃/ZrO₂/Al₂O₃ high-k gate stack together with the interfacial layer (IL) formed on SiGe-on-insulator (SGOI) substrate have been investigated. A clear layered Al₂O₃ (2.5 nm)/ZrO₂ (4.5 nm)/Al₂O₃ (2.5 nm) structure and an IL (2.5 nm) are observed by high-resolution transmission electron microscopy. X-ray photoelectron spectroscopy measurements indicate that the IL contains Al-silicate without Ge atom incorporation. A well-behaved C–V behavior with no hysteresis shows the absence of Ge pileup or Ge segregation at the gate stack/SiGe interface.     

ZrO2-13%Al2O3陶瓷薄壁件激光近净成形实验

采用同轴送粉激光近净成形系统,在纯钛基体上进行激光近净成形(LENS)ZrO2-13%Al2O3(质量分数)复合陶瓷的基础实验研究。分析了激光功率和扫描速度对激光近净成形陶瓷薄壁宏观质量(宽高、表面平整性和宏观裂纹)的影响规律,获得致密、无宏观裂纹的陶瓷薄壁件。利用扫描电镜观察了成形件的微观组织,结合电子探针(EPMA)和X射线衍射仪(XRD)分析了微观组织成分和ZrO2陶瓷激光加工前后相成分的变化。结果表明,激光功率和扫描速度对激光近净成形陶瓷单层高度和表面宏观质量具有重要影响,通过精确控制该两个参数能够获得良好的表面质量;不同的激光功率和扫描速度下,会产生横向和纵向两种不同的宏观裂纹;激光近净成形技术能够制备出致密并具有细小枝状晶组织的陶瓷;少量的Al2O3主要存在于晶界中,有利于抑制裂纹扩展。     

Ti~(3+):Al_2O_3激光特性的研究

本文详细报道了Ti~(3+):Al_2O_3激光器的实验结果.用一台Q开关脉冲Nd~(3+):YAG激光器的倍频光作泵浦源,获得了677～987nm调谐范围内O.5MW的峰值输出功率和13.9%的能量转换效率的TEM_(00)模输出.对实验结果进行了分析.l     

Preparation of nanocomposite thin films by sol-gel and photochemical metal–organic deposition of Ba0.5Sr0.5TiO3 and PbZr0.48Ti0.52O3

The process for generating nanocomposite films constructed from alternate thin film layers of Ba_0.5Sr_0.5TiO₃ and PbZr_0.48Ti_0.52O₃ by photochemical metal–organic deposition and sol-gel has been investigated. By spin coating the appropriate metal organic precursors to Ba_0.5 Sr_0.5TiO₃ followed by photolysis a single layer of amorphous Ba_0.5Sr_0.5TiO₃, is produced. Subsequent spin coating of the appropriate metal organic precursors of PbZr_0.48Ti_0.52O₃ and photolysis led to the formation of a layer of amorphous PbZr_0.48Ti_0.52O₃. By repeating this procedure a material composed of alternating layers of BST and PZT was constructed. In an analogous process alternate coating and heating of the appropriate sol-gel precursors was used to make similar structures. These nanocomposite materials were formed as amorphous layered materials but could be made to crystallize by heat treatment. Heat treatment resulted in crystallization of the films although the resultant diffraction pattern was dependent upon the thickness of the layers. X-ray diffraction patterns of both BST and PZT were apparent in crystalline films formed from layers of more than 25 nm in thickness. The crystallization of films formed from layers less than 25 nm in thickness showed only a lattice constant intermediate between that expected for BST and PST consistent with the interdiffusion of these components. Atomic force microscopy indicated that the amorphous nanocomposite films were near featureless while the crystalline films had a much higher surface roughness.