蔡氏电路中电感阻耗对混沌现象的影响

设计了一个实用的有耗电感蔡氏电路，对有耗电感蔡氏电路中非线性电阻的伏安特性曲线进行了测量，并用示波器观察了电感有效电阻对混沌现象影响情况。基于以上实验结果，建立了有耗电感蔡氏电路的数学模型，对其进行了理论分析，并用Matlab软件进行了模拟仿真研究，发现电感阻耗能改变混沌的不同状态，从而得出电感的阻耗不能忽略的结论。     

蔡氏电路混沌同步保密通讯

两个相同的蔡氏电路(Chua’s Circuit)互相耦合可以实现混沌(Chaos)同步是混沌研究的一个重要成果．也是探索蔡氏电路开发应用的基础。应用蔡氏电路的同步特性实现保密通讯是当前蔡氏电路开发应用研究的一个主要方向。本文在介绍蔡氏电路混沌同步特性的基础上，讨论主—从式蔡氏电路同步保密通讯系统及实现双向通讯和无线传输的可行性．并对这种保密通讯系统的安全性与鲁棒性(Robustness)作了简要的分析.     

一种基于有源模拟电感的单电源蔡氏电路

蔡氏电路是一种结构简单、便于实现的混沌电路,其中蔡氏二极管是蔡氏电路的核心,目前大多采用正负电源供电的运放和电阻来实现。本文在分析蔡氏二极管原理的基础上,通过给运放设置合适的偏置点,采用单电源供电电路实现蔡氏二极管模型。在电路的具体实现中,现有蔡氏电路所采用的线性电感具有价格高、精度不易控制等缺点,为了克服这个问题,本文采用有源模拟电感代替线性电感的设计思想,针对两种有源模拟电感的实现方案,进行了板级电路设计和测试验证。测试结果表明,在+5 V单电源供电下,利用模拟电感代替线性电感不会影响电路的混沌性。     

基于混沌同步的混沌脉冲定位调制研究

随着混沌理论和混沌同步的发展及完善，根据混沌脉冲定位调制（CPPM）的基本原理，提出一种基于混沌同步的混沌脉冲定位调制（CS—CPPM）实现方法，建立以蔡氏混沌同步电路和Logstic映射为例的实现模型，用EWB仿真软件对蔡氏二极管、蔡氏电路以及蔡氏同步电路进行分析和实现，最后用Matlab对整个系统进行仿真，实验结果论证了该方法的可行性．这样使得混沌脉冲定位调制信号可以利用现有的混沌映射实现．从而具有多样性和稳定的混沌特性。也使得混沌脉冲定位调制（CPPM）技术具有更多的实现途径和更深的研究与应用价值。     

非理想信道下Colpitts混沌电路的自适应同步研究

本文研究了Colpitts混沌电路在非理想信道条件下的自适应同步问题。引入自适应控制器对输入到响应部分（response system）的衰变混沌信号进行预处理，来补偿衰落信道对于同步性能的影响。给出了系统的数学模型，对恒定信道衰变和时变信道衰变两种非理想信道条件下的混沌ColpiRs电路的自适应同步进行了数值仿真研究。仿真结果表明，对于恒定或慢变化的时变信道衰变，自适应控制器可以有效的提高Colpitts电路响应部分和驱动部分（Drive system）的同步性能。     

一种单输入控制器下的忆阻混沌同步电路设计与实现

该文提出一种在单输入控制器下基于忆阻器的混沌同步模拟电路设计及其实现方法,并将它应用于基于忆阻混沌同步的保密通信.首先,基于混沌同步理论,构建了混沌同步系统及保密通信模型,并设计实现了一种4阶压控忆阻混沌电路和混沌加密解密电路.其次,将所设计的忆阻混沌电路作为混沌驱动和响应电路,根据它们的误差系统设计了一种单输入混沌同...     

基于模拟电感的蔡氏电路硬件实验

蔡氏电路含有不易调节且成本高的电感元件，在教学实验中较难开展电路设计与硬件实验。对原始电感元件采用里奥登电感等效替换，通过Altium Designer软件绘制电路原理图，开展了基于模拟电感的蔡氏电路硬件实验。结果表明，基于模拟电感的蔡氏电路不仅能重塑经典蔡氏电路的动力学行为，其电感值还更易于调节，为大规模集成电路设计与创新性教学实验提供了优良方案。     

基于Chua电路混沌同步自保持特性的研究

本文介绍了Chua电路及其特性，给出实现非线性电阻的一种电路；利用Chua电路构造出一种驱动-响应混沌同步系统，利用仿真得出此同步系统具有一定鲁捧性，抗干扰等特性；根据此同步系统，仿真发现混沌同步具有自保持特性，并给出仿真结果，这一发现为混沌在保密通信的实际应用提供了依据．     

超混沌电路的广义同步

该文研究了超混沌电路的广义同步,理论分析表明:只要构造出恰当的矩阵和一个与之相对易的矩阵,就可以实现驱动系统与响应系统的广义超混沌同步。文章并以一个四维超混沌振荡电路为例,给出了广义同步的数值模拟结果。     

激光混沌耦合同步及其在保密通信中的应用

建立了外部光注入半导体激光器激光混沌耦合同步系统，导出了耦合条件下的激光扰动方程和激光同步扰动方程。成功模拟了外部光注入波长1．3lμm分布反馈半导体激光器的激光混沌耦合同步，其同步误差小且抗噪声干扰能力强。该同步系统在混沌模拟和数字保密通信中的数值模拟表明，无论是在时域还是在频域，信息都难以被分离，该系统确有较高的保密性能和反破译能力。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.