电流控制模式白光LED驱动电路的频率补偿研究

白光LED由于其工作寿命长和能耗低的特点，为无线通讯产品的应用提供了完美的背光方案，其驱动芯片的设计大部分采用电压模式和电流模式两类控制方案。电流控制型白光LED驱动电路因为线性调整率和负载调整率非常好的优点成为目前设计的热点。基于1 MHz开关频率的电流控制型白光LED驱动芯片，结合相关的研究，对电流控制型白光LED驱动芯片进行了小信号分析，根据得出的回路增益提出了具体的频率补偿方案，并给出了实现频率补偿的方案．必须满足的参数设计方法。补偿方案能有效提高白光LED驱动芯片的小信号稳定性。     

用于LED驱动芯片的高低边电流检测电路

本文介绍了一种适用于大功率LED驱动芯片的高低边电流检测电路.该检测电路可以根据实际应用系统不同实现高低边检测电路的自动切换,不需要额外设置,并且采用该电流检测电路的LED驱动芯片能支持升压、降压以及升-降压等多种拓扑结构的应用,为LED驱动芯片提供更广阔的应用市场.芯片采用CSMC 0.6μm 60VBCD工艺实现,测试结果显示当基准电压VREF为1.217V时,LED电流为371.3mA,采样比例与设计的基本一致,从而验证了该高低边电流检测电路的可行性.     

采用光反馈控制白光LED的降压稳压器

由于大功率、高效率白光（以及其它颜色）LED的实现,采用LED的照明更受关注（参考文献1）。由于LED是一种电流控制器件,典型控制电路是调节通过LED的电流来保持一致的亮度。为了最好地利用电能,用户经常将开关转换电路用于LED,根据输入直流电压的不同,可以是降压（Buck）或升压转换器。图1是典型的降压和升压转换器白光LED驱动电路的结构。白光LED增加了串接电阻R,     

双输出升压型转换器LT3466

LT3466是凌特公司生产的一款全功能双输出升压型DC／DC转换器．可驱动多达20个白光LED，并具有软启动、LED开路保护及欠压闭锁等功能。文中介绍了LT3466芯片的结构特点、工作原理、设计方法及应用电路。     

一种高效低功耗DC2DC升压稳压器的设计

文章设计了一种高效率、低电流、低功耗的DC2DC升压稳压器,通过采用PWM、同步整流、软开关、电流限幅保护等多种技术,使该电路具有较大的输入电压范围、快速瞬态响应、输入欠压/过压保护、输出过流/过压保护和过热保护等功能.最后芯片采用1.5μm的P衬N阱数模混合1P2M BiCMOS工艺流片成功,可用于便携设备显示屏的白光LED背光.     

Allegro推出全新高性能容错LED驱动器

Allegro推出一款用于消费类和工业显示LCD背光的多输出白光LED驱动器。Allegro的新款A8515设备拥有先进的保护功能,可提供最佳视野。它整合了电流模式升压转换器与内部电源开关和两个电流变换器。该升压转换器可驱动多达24个LED,电流为120mA。     

TI针对车载音频推出D类放大器

凌特公司（Linear）目前宣布推出同步降压＋升压型DC／DC转换器LTC3454，法器件可优化从单节锂离子电池输入以1A电流驱动单个大申流白光LED。根据输入电压和LED岛高正向电压的不同，该稳压器自动工作在同步降压、同步升压或降压一升压模式。这在大电流LED应用中尤其重要，因为根据电流值的不同，LED正向电压可能在2．7～4．9V的范围内变化。     

利用电荷泵驱动器优化白光LED背光应用效率

白光LED通常由一个恒定直流电流源驱动,以保持恒定的亮度。在采用单节锂离子电池供电的便携式应用中,白光LED与电流源上的电压降之和可以比电池电压高或低,这意味着白光LED某些时候需要对电池电压进行升压。实现这样应用的最好办法是使用升压DC/DC转换器。这种方法大大地优化了     

利用EL7516制作高效、高电流的白光LED驱动器

随着白光LED的发展,它的应用越来越广。从前,白光LED最常见的应用是作为小尺寸LCD彩屏的背光光源。现在,当白光LED的亮度加大后,它的应用已普及到其他方面,例如手电筒或手机照相辅助照明。下文将介绍一种利用普通的升压芯片来驱动大电流LED的高效电路。     

内嵌EEPROM的升压LED驱动器控制芯片设计

设计了一款集成了输入串行数字接口、内嵌EEPROM单元的同步整流升压式DC-DC转换芯片,用于手机背光灯的白光发光二极管(LED)驱动控制.通过内嵌的8位EEPROM存储阵列电路对芯片进行配置可得到3个不同型号的芯片系列,分别驱动3、4、5个串联白光二极管,并依次对应三种过压保护阈值(14.5、18.5和23.5V).该芯片可采用1、1.2、1.4和1.6MHz高频开关频率,具体频率可通过EEPROM进行配置,给芯片外围电路的设计带来了极大的灵活性.同时,可利用EEPROM单元对芯片中的参考电压基准电路进行校准,提升芯片性能.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks