应用于DVB—T的0．18μmCMOS工艺数字可编程分频器芯片设计

介绍了用于DVB．T（地面数字视频广播）收发机的频率综合器中可编程分频器的设计。该分频器可实现926～1387范围的分频比，并用改进的分频算法使分频输出波形的占空比更加理想。本设计采用SMIC0．18μm CMOS工艺标准单元的半定制设计方法，按标准的数字集成电路设计流程进行设计，包括Verilog代码编写、逻辑综合、版图规划、布局布线、后端时序仿真分析等过程。后仿真结果表明该分频器功能正确，分频范围宽，利用改进的分频算法改善了分频输出波形的占空比。     

应用于频率合成器的宽分频比CMOS可编程分频器设计

提出一种应用于射频频率合成器的宽分频比可编程分频器设计。该分频器采用脉冲吞吐结构,可编程计数器和吞脉冲计数器都采用改进的CMOS源极耦合（SCL）逻辑结构的模拟电路实现,相对于采用数字电路实现降低了电路的噪声和减少了版图面积。同时,对可编程分频器中的检测和置数逻辑做了改进,提高分频器的工作频率及稳定性。最后,采用TSMC的0.13μm CMOS工艺,利用Cadence Spectre工具进行仿真,在4.5 GHz频率下,该分频器可实现200515的分频比,整个功耗不超过19 mW,版图面积为106μm×187μm。     

应用于26 GHz-41 GHz频率综合器的高速可编程分频器的设计

毫米波频率综合器中的重要模块之一高速可编程多模分频器,它主要用于对VCO的输出信号进行分频从而获得稳定的本振信号,它的性能影响整个毫米波频率综合器性能。本文设计的一种高速、低功耗、分频比可变的分频器具有非常重要的意义[1]。根据26 GHz-41 GHz硅基锁相环频率综合器的系统指标,本文基于TSMC 45nm CMOS工艺,设计实现了一种高速可编程分频器。本文采用注入锁定结构分频结构实现高速预分频,该结构可以实现在0 d Bm的输入功率下实现25 GHz-48 GHz的分频范围、最低功耗为:2.6 m W。基于脉冲吞咽计数器的可编程分频器由8/9双模分频器和可编程脉冲吞咽计数器组成。其中8/9双模分频器由同步4/5分频器和异步二分频构成,工作频率范围10 GHz-27 GHz,最低输入幅度为:300 m V,最低功耗为:1.6 m V。可编程吞咽计数器采用改进型带置数功能的TSPC D触发器,该可编程分频器的最大工作范围:25 GHz;最小功耗为:363μW。本文设计的高速可编程多模分频器,可以实现32-2 062的分频比;当工作于28 GHz时,相位噪声小于-159 dBc/Hz。动态功耗为5.2 m W。     

一种由多级2/3分频单元级联而成的通道可编程分频器设计

介绍了一种由多级2/3分频单元级联的可编程分频器,可应用于扇出缓冲器的通道中.分频器采用0.18μm BiCMOS工艺实现.分频器的电源电压为3.3V,分频比支持1、3、5以及4～4 094的所有偶数分频,且所有分频输出信号的占空比为50％.     

可扩展分频比范围的射频可编程分频器设计

介绍了一种可扩展分频比范围的射频可编程分频器,该电路包括输入放大器、前置2分频电路、4级除2/除3分频单元和15位可编程计数器。该分频器应用于频率合成器中,采用0.35μm BiCMOS工艺实现,电源电压3.3V,电源电流80mA。射频输入12GHz时灵敏度-10~10dBm。分频比从16到219-1可调。     

一种占空比可调的新型整数半整数分频器设计

提出了一种数字分频器,根据分频器外部输入的分频比和占空比控制参数,对源时钟实现任意偶数、奇数和半整数分频,占空比全范围可调,包含50％.电路由Verilog HDL编程实现,并通过Xilinx公司SPARTAN XC3S250E芯片硬件验证.测试表明该分频器结构简单功能稳定,资源占用不足1％,使用灵活,具有较强的可移植性.     

一种0.18 μm CMOS可编程分频器的设计

采用标准0.18 μm CMOS工艺,设计了一种可编程分频器。基于基本分频单元的特殊结构,对除2/除3单元级联式可编程分频器的关键模块进行改进,将普通的CML型锁存器集成为包含与门的锁存器,提高了电路的集成度,有效地降低了电路功耗,提升了整体电路速度,并使版图更为紧凑。后仿真结果表明,在1.8 V电源电压,输入频率f_in=1 GHz的情况下,可实现任意数且步长为1的分频比,相位噪声为-173.1 dBc/Hz @ 1 MHz,电路功耗仅为9 mW。     

一种多模可编程前置分频器的设计

针对目前大多数射频可调谐芯片中前置分频器多为双模结构,设计了一种基于2/3分频单元的可编程多模(64～127)前置分频器.采用0.35 μm SiGe BiCMOS工艺,在工作电源电压Vdd=5 V,输入频率为2.2 GHz的情况下,可实现分频比为64～127之间的可编程多值分频,功耗为37.18 mW.     

一种宽分频范围的CMOS可编程分频器设计

设计了一种基于双模预分频的宽范围可编程分频器。对预分频器的逻辑电路进行了改进,提高了最高工作频率,同时,引入输入缓冲级,增加了低频时分频器的输入敏感性。基于Chartered 0.25μm厚栅CMOS工艺,在SpectreRF中仿真,分频器可在50MHz～2.2GHz频率范围正常工作。流片测试结果表明,该分频器可正常工作在作为数字电视调谐芯片本振源的PLL中,对80～900MHz的VCO输出信号,实现256～32767连续分频。     

5 GHz 0.18-μm CMOS 可编程分频器

提出了一种2.4GHz ZigBee 应用的可编程分频器,其分频模值在2403-2480之间变化。该分频器基于双模分频器和吞咽计数器架构,功耗和面积得到了有效降低。芯片采用0.18-μm CMOS混合信号工艺实现,当输入信号达到7.5dBm时,分频器可正常工作的频率范围覆盖1-7.4 GHz,在100KHz频偏处的输出相位噪声为-125.3dBc/Hz。分频器核心电路消耗电流4.3mA（1.8V电源电压）,核心面积0.015mm2。测试结果表明该可编程分频器能很好的应用在所需的频率综合器中.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.