纳米K2Ti6O13W合成中的形态演化和生长机理

以纳米TiO2为原料,通过煅烧反应制备了纳米K2Ti6O13晶须,对晶须合成中温度和时间诱导的相变、形态演化和生长机理等进行了原位研究.结果表明:纳米TiO2作原料可显著降低晶须合成温度,适宜的煅烧温度为900～1100℃.形态演化观察和高温XRD分析表明:K2Ti6O13晶须的相变及生长对温度极为敏感,形态演化是基于初期爆发式的相变和随后串并联式的长大.K2Ti6O13晶须的生长遵守本研究提出的串并联机制,晶须轴向的生长台阶是串并联生长的直接结果.     

钛合金表面K2Ti6O13w涂层的制备及其生物活性

K2Ti6O13晶须不仅具有优越的力学性能和良好的生物学特性,而且具有与常规Ti合金相近的膨胀系数。本研究尝试选用K2Ti6O13晶须（K2Fi6O13w）作为生物活性涂层材料,利用BCC方法（混合-包埋-煅烧）在Ti合金基体上成功制备了K2Ti6O13w涂层,并对涂层的表面形态、结合强度和生物活性进行了研究。结果表明,涂层由K2Ti6O13晶须和少量的TiO2和K2Ti6O9组成,其表面粗糙多孔。由于膨胀系数的良好匹配,涂层与基体之间具有较高的结合强度,达24MPa。模拟体液培养后,涂层表面沉积了一层多孔的骨状羟基磷灰石,它由平均直径20nm,长200nm的羟基磷灰石纳米线组成,这表明钛酸钾涂层具有良好的生物活性。涂层较高的生物活性与其独特的生化特性和组分密切相关。     

反应合成六钛酸钾晶须的微结构及其晶体学生长研究

通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)等测试方法分析反应合成的六钛酸钾(K2Ti6O13)晶须的形态、晶体结构及其结晶生长。结果表明,采用烧结法一次反应合成的K2Ti6O13晶须为柱状单晶,在确定的工艺条件下获得的晶须表面质量很好,内部原子排列规则,没有晶体缺陷存在,外侧面和断面有一层紊乱的过渡层,晶须沿轴向和径向生长,且沿轴向生长快,其轴向生长方向平行于[010]方向。     

钛酸钾晶须水热合成多形体TiO2及结构演变

从不同种类的钛酸钾晶须(K2Ti6O13,K2Ti4O9和K2Ti8O17)出发,通过水热条件下转晶得到了多形体TiO2晶粒,其中K2Ti6.O13晶须通过酸性条件下水热反应得到形貌规整的孪晶金红石TiO2.并借助XRI)、SEM和TEM等手段,考察了水热反应过程中的晶体结构演变,证明了前驱物中的弱结合晶面是发生晶体结构转变的关键因素,K2Ti6O13.通过{100}和{201-}晶面上的原子重排,生成孪晶金红石型TiO2.     

纤维及晶须增强PTFE复合材料的摩擦磨损性能研究

利用MHK－500型环－块磨损试验机,对炭纤维,玻璃纤维及钛酸钾（K2Ti6O13)晶须增强聚四氟乙烯（PTFE）复合材料在干摩擦条件下与GCr15轴承钢对磨时的摩擦学性能进行了较为系统的研究,并利用扫描电子显微镜（SEM）和光学显微镜对其磨屑和摩擦表面进行了观察。结果表明,炭纤维,玻璃纤维及K2Ti6O13晶须虽增大了PTFE的摩擦系数,但均可将PTFE的磨损量降低2个数量级,其中玻璃纤维的减磨效果最好,K2TiO13晶须的减磨效果最差,由于K2TiO13晶须的承载能力较差,致使K2Ti6O13晶须增强PTFE复合材料的磨损表面发生了明显的挤压变形,因而该复合材料具有较高的摩擦和磨损。     

纳米Li4Ti5O12/C复合材料的制备与性能

基于煅烧温度对Li4 Ti5O12粒径与反应性的影响,采用两步固相反应制备了纳米Li4 Ti5 O12/C复合材料,并采用XRD、SEM、TG/DTA、电化学阻抗谱(EIS)及充放电测试进行了表征.结果显示,无定形TiO2和Li2 CO3原料于600℃反应生成Li2TiO3和金红石TiO2复合物,晶粒基本无生长;高于700℃煅烧,复合物转化为Li4 Ti5 O12,但晶粒生长增速.在原料中掺入蔗糖于800℃一步固相反应制备Li4 Ti5O12/C复合材料,可显著抑制晶粒生长,但产物中含有金红石TiO2杂相,电化学性能不佳.采用两步固相反应,原料于600℃预热处理得到Li2TiO3/TiO2复合物,然后掺入蔗糖于800℃高温煅烧,可制得粒径约100～200nm的纯相Li4 Ti5O12/C复合材料,0.2C放电容量达167.3mAh/g,1C放电容量达163.1mAh/g,1C循环30周后容量保持率达96％.     

耐高温Al2O3/TiO2纳米复合粉体的制备及表征

以TiCl4、Al2(SO4)3为原料,采用液相沉淀法制备了Al2O3/TiO2纳米复合粉体,同时对该纳米复合粉体的相变过程和晶粒生长过程进行了详细的研究,对紫外-可见光吸收进行了检测.结果表明:纳米TiO2粉体经Al2O3复合后,其耐温性能得到极大提高,复合粉体经950℃煅烧后锐钛矿相含量仍然在77%,晶体粒径在20nm左右;锐钛矿向金红石晶型的转变温度在950～1100℃的高温区.复合粉体在低温煅烧后,紫外-可见吸收强度较纯纳米TiO2有较大提高,高温煅烧后,复合晶的紫外光吸收红移.     

纳米Ti0.8Cr0.2OxNy粉体的制备与表征

以沉淀法制备的纳米TiO2／Cr2O3复合粉体为原料，采用氨解法在800℃、氮化8h制备了纳米Ti0.8Cr0.2OxNy粉体．对纳米TiO2／Cr2O3复合粉体和合成的氧氮化物粉体用俄歇电子能谱(AES)、氮吸附比表面积(BET)、X射线衍射(XRD)、透射电子显微镜(TEM)、电子探针显微分析(EPMA)等方法进行了表征．结果表明：沉淀法可以制备出组成均匀的纳米TiO2／Cr2O3复合粉体，该复合粉体在800℃氮化8h可得到粒度为20～30nm的纯立方相Ti0.8Cr0.2OxNy纳米粉体，其比表面积达46．74m^2／g．     

二钛酸钾纳米薄膜的原位合成及其性能研究

以Ti(n-OC4H9)4和CH3COOK为前驱体,采用溶胶-凝胶法在较低温度下原位合成了高光催化活性的K2Ti2O5纳米薄膜;采用TG-DSC,XRD,Raman光谱和AFM研究了K2Ti2O5薄膜的晶体生长过程;采用电化学方法测量了薄膜的光电响应.结果表明:原料在约259℃发生反应,在低于414℃的固态反应阶段生成K2Ti2O5晶核,在414℃～600℃的结晶阶段制得K2Ti2O5纳米薄膜,薄膜的颗粒表面非常平整,薄膜的晶粒是沿着一个晶面取向生长;薄膜均匀、致密、透明;在空气中紫外光照时,K2Ti2O5薄膜能很有效的降解OTS(C18H37SiCl3)单分子膜(SAMs),光催化活性比溶胶-凝胶法制备的TiO2薄膜高,光激发和光电响应能力也比TiO2薄膜强.     

一维β-SiAlON材料可控合成

以Si粉、Al粉和Al2O3粉为原料压制成条样,在1650~1850 K氮气和埋Si3N4颗粒气氛下分别合成了β-SiAlON晶须、带状和柱状晶,并系统研究了一维β-SiAlON材料可控合成条件,进而结合热力学分析了一维β-SiAlON材料的生长机制。结果表明:以Si粉、Al粉和Al2O3为原料,在氮气(纯度99.9%)和埋Si3N4颗粒气氛下在1650~1850 K保温6 h,可以合成不同形貌的一维β-SiAlON材料。生长温度是一维β-SiAlON材料形貌控制的关键因素。生长温度为1650 K时,合成了β-SiAlON晶须,晶须直径200~400 nm,长径比100~1000;生长温度在1700~1800 K时,可以合成β-SiAlON带状晶体,厚度为200 nm,宽度为1~4μm,长宽比在10~20之间;生长温度升高至1800 K时,出现大量柱状晶体。结合晶须显微结构形貌和热力学分析,β-SiAlON晶须的生长机制为气–固(VS)生长机制。     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.     

Tc trend in high-Tc superconductors

In our previous works, we have shown that most existing ceramic superconductors can be considered to be built of superconductor-semiconductor composite and we have estimated the change in phonon spectrum of the intrinsic superconductor unit if a semiconductor unit is attached to it. Moreover, the proximity effect under the size quantization condition has been examined in the superconductor-semiconductor composite. Each of the stated effects by itself could causeT _c enhancement in general as more semiconductor blocks are added to the system. We extend our study in this paper to analyze the combined actions of phonon spectral change and proximity effect without size quantization condition onT _c variation in members of the Tl₁ series of high-T _c superconductors. Our results indicate that an optimumT _c is obtained if the stated effects are included in the idealized unit cells of the superconductors made up of a superconductor-semiconductor array.     

Anomalous Hall Effect in Sn1?x?yMnxEuyTe and Sn1?x?yMnxEryTe Mixed Crystals

The Anomalous Hall Effect (AHE) was investigated in IV–VI ferromagnetic semimagnetic semiconductors of Sn_1–x Mn _x Te codoped with either Eu or Er. The analysis of experimental data is as follows. Hall resistivity and magnetization showed that AHE coefficient R _s depends on temperature and its value decreases with thetemperature increase. We observe that above ferromagnet–paramagnet transition temperature R _s changes sign. We discuss the possible physical mechanisms responsible for observed temperature dependence of R _s , particularly change of the sign.     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Effect of pressure onTc in La2-xBaxCuO4 withx=0.125

The superconducting transition temperature,T _c , of La_2–x Ba _x CuO₄ has been measured under high pressure up to 8 GPa.T _c is found to change drastically at the pressure where the structural phase transition takes place. This finding clearly indicates that there exists an intimate relation between the crystal structure and superconductivity.