12 bit 200 MS/s时间交织流水线A/D转换器的设计

介绍了一款应用于无线收发系统的12 bit 200 MS/s的A/D转换器(ADC).流水线型模数转换器是从中频采样到高频采样并且具有高精度的典型结构,多个流水线型模数转换器利用时间交织技术合并成一个模数转换器的构想则是复杂结构和能量利用率之间的折中选择.采用了时间交织、流水线和运算放大器共享等技术,既提高了速度和精度,也节省了功耗.同时为了减小时序失配对时间交织流水线ADC性能的影响,提出了一种对时序扭曲不敏感的采样保持电路.采用SMIC 0.13 μm CMOS工艺进行了电路设计,核心电路面积为1.6 mm×1.3 mm.测试结果表明,在采样速率为200 MS/s、模拟输入信号频率为1 MHz时,无杂散动态范围(SFDR)可以达到67.8 dB,信噪失真比(SNDR)为55.7 dB,ADC的品质因子(FoM)为1.07 pJ/conv.,而功耗为107 mW.     

一种用于流水线ADC的高增益高带宽放大器

介绍了一种适用于高速高精度流水线模数转换器(ADC)的放大器.该放大器使用了增益提升技术,具有高增益、高单位增益带宽的特点,能满足高速高精度ADC对放大器的性能要求.该放大器采用1.8 V 1P6M 0.18 μm CMOS工艺实现,仿真表明直流增益为100 dB,单位增益频率为1.2 GHz(负载电容1.5 pF),功耗16 mW.将该放大器用于10位100 MS/s转换速率的流水线ADC,测试结果表明该放大器性能达到设计要求.     

一种用于高速ADC的采样保持电路的设计

设计了一个用于流水线模数转换器(pipelined ADC)前端的采样保持电路.该电路采用电容翻转型结构,并设计了一个增益达到100dB,单位增益带宽为1 GHz的全差分增益自举跨导运算放大器(OTA).利用TSMC 0.25μm CMOS工艺,在2.5 V的电源电压下,它可以在4 ns内稳定在最终值的0.05%内.通过仿真优化,该采样保持电路可用于10位,100MS/s的流水线ADC中.     

一个用于12位40-MS/s低功耗流水线ADC的MDAC电路设计

文中设计了一个用于12位40MHz采样率低功耗流水线ADC的MDAC电路.通过对运放的分时复用,使得一个电路模块实现了两级MDAC功能,达到降低整个ADC功耗的目的.通过对MDAC结构的改进,使得该模块可以达到12bit精度的要求.通过优化辅助运放的带宽,使得高增益运放能够快速稳定.本设计在TSMC0.35μmmixsignal3.3V工艺下实现,在40MHz采样频率下,以奈奎斯特采样频率满幅(Vpp=2V)信号输入,其SINAD为73dB,ENOB为11.90bit,SFDR为89dB.整个电路消耗的动态功耗为9mW.     

一种10位250 MS/s电荷域流水线ADC

提出了一种高速、低功耗、小面积的10位 250 MS/s 模数转换器(ADC)。该ADC采用电荷域流水线结构,消除了高增益带宽积的跨导运算放大器,降低了ADC功耗。采用流水线逐级电荷缩减技术,降低了后级电路的电荷范围,减小了芯片面积。测试结果表明,在250 MS/s采样速率、9.9 MHz输入正弦信号的条件下,该ADC的无杂散动态范围(SFDR)为64.4 dB,信噪失真比(SNDR)为57.7 dB,功耗为45 mW。     

一种采用4bit MDAC的12bit流水线模数转换器

采用GF 0.18μm标准CMOS工艺,设计并实现了一种12 bit 20 MS/s流水线模数转换器(ADC)。整体架构采用第一级4 bit与1.5 bit/级的相结合的方法。采用改进的增益数模单元(MDAC)结构和带驱动能力的栅自举开关来提高MDAC的线性度和精度。为了降低子ADC的功耗,采用开关电容式比较器。仿真结果表明,优化的带驱动的栅自举开关可减小采样保持电路(SHA)的负载压力,有效降低开关导通电阻,降低电路的非线性。测试结果表明:在20 MS/s的采样率下,输入信号为1.234 1 MHz时,该ADC的微分非线性(DNL)为+0.55LSB/-0.67LSB,积分非线性(INL)为+0.87LSB/-0.077LSB,信噪比(SNR)为73.21 dB,无杂散动态范围(SFDR)为69.72 dB,有效位数(ENOB)为11.01位。芯片面积为6.872 mm2,在3.3 V供电的情况下,功耗为115 mW。     

用于视频图像传感器的12 bit 60 MS/s流水线模数转换器

介绍了一种12 bit 60 MS/s流水线模数转换器(ADC),该转换器使用采样保持电路,将连续变化的模拟信号通过一定时间间隔的采样,以实现信号的准确量化,利用增益自举运放提高信号建立的线性度;采用每级1.5 bit精确度的流水线结构实现冗余编码,降低比较器失调电压对精确度的影响,同时提出一种新型的消除静态功耗的预放大比较器结构。该流水线ADC芯片采用华力55 nm 互补金属氧化物(CMOS)工艺进行电路和版图设计。对后仿真结果进行快速傅里叶变换(FFT)分析得到：动态参数无杂散动态范围(SFDR)为86.18 dB,信噪比(SNR)为72.91 dB,信纳比(SNDR)为72.8 dB,有效位数(ENOB)为11.72 bit。     

一种带有增益提高技术的高速CMOS运算放大器设计

设计了一种用于高速ADC中的高速高增益的全差分CMOS运算放大器。主运放采用带开关电容共模反馈的折叠式共源共栅结构,利用增益提高和三支路电流基准技术实现一个可用于12~14 bit精度,100 MS/s采样频率的高速流水线（Pipelined）ADC的运放。设计基于SMIC 0.25μm CMOS工艺,在Cadence环境下对电路进行Spectre仿真。仿真结果表明,在2.5 V单电源电压下驱动2 pF负载时,运放的直流增益可达到124 dB,单位增益带宽720 MHz,转换速率高达885 V/μs,达到0.1%的稳定精度的建立时间只需4 ns,共模抑制比153 dB。     

用于12位250 MS/s电荷域ADC的2.5位子级电路

提出了一种用于12位250 MS/s电荷域流水线模数转换器(ADC)的2.5位子级电路。采用增强型电荷传输电路,实现电荷传输和余量电荷计算,省去了传统流水线ADC中的高性能运放,大幅降低了ADC的功耗。该2.5位子级电路被应用于一种12位250 MS/s电荷域流水线ADC中,并采用0.18 μm CMOS工艺实现。测试结果表明,在250 MS/s采样率、20.1 MHz输入频率下,该ADC的SNR为65.3 dBFS。     

适用于12 bit流水线ADC采样保持电路的设计

介绍了一种用于12 bit,20 MS/s流水线模数转换器前端的高性能采样/保持电路。该电路采用全差分结构、底极板采样来消除电荷注入和时钟馈通误差。采用栅压自举开关,并通过对电路中的开关进行组合优化,极大地提高了电路的线性性能。同时,运算放大器采用折叠式增益增强结构,以获得较高的增益和带宽。采用CSMC公司的0.5μm CMOS工艺库,对电路进行了仿真和流片。结果表明,在5 V电源电压下,采样频率为20 MHz,采样精度可达到0.012%,在输入信号为奈奎斯特频率时,无杂散动态范围(SFDR)为76 dB。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.