专利技术

锗烷气体的提纯收集系统和方法申请（专利）号：201110230532.0公开（公告）日：2012-03-28申请（专利权）人：福建博纯材料有限公司摘要：本发明公开了一种锗烷气体的提纯收集系统和方法,利用冷凝装置对含锗烷气体进行冷凝;利用排空装置将未被所述冷凝装置冷凝的气体排除;利用加注装置将被所述冷凝装置冷凝提纯的锗烷气体注入钢瓶.     

二维气相色谱法快速分析高纯锗烷中杂质

采用二维气相色谱技术与脉冲氦离子化检测器相结合,测定高纯锗烷中杂质,并探讨了不同阀事件时间程序对分析结果的影响.该方法实现了通过一次进样完成锗烷中微量氢、氧(氩)、氮、一氧化碳、二氧化碳和甲烷杂质分析,结果表明该方法的重复性和准确性好.     

锗烷气体制备装置及利用其制备单锗烷气体的方法

<正>申请(专利)号:201380043627.9公开(公告)日:2015-05-13申请(专利权)人:奥瑟亚新材料股份有限公司摘要:本发明涉及一种锗烷气体制备装置及利用其制备单锗烷气体的方法。本发明尤其涉及一种如下的锗烷气体制备装置及利用其制备单锗烷气体     

云南省锗资源现状及开发利用对策研究

介绍了锗资源的特性与锗的主要用途,综述了云南省铅锌矿含锗和褐煤含锗资源的分布及特点,分析了从含锗铅锌矿和含锗褐煤中提取锗的工艺现状以及锗常规产品和精、深产品加工现状,指出了目前云南省锗资源开发利用存在的主要问题:资源利用率低、环境污染严重、精深产品少、锗产品附加值低以及对锗作为一种战略物质的认识不足.对开发利用云南省丰富的锗资源,从多个方面提出了建议.     

专利文摘

正一种砷烷在线检测装置和检测方法申请(专利)号:201910623198.1公开(公告)日:2021-01-12申请(专权)人:东泰高科装备科技有限公司摘要:本发明提供了一种砷烷在线检测装置和检测方法。该在线检测装置包括:砷烷浓度检测器;水分检测器,与砷烷浓度检测器相连;气质联用仪,与水分检测器相连,气质联用仪配置第一色谱柱、第二色谱柱、脉冲放电氦离子化检测器和质量选择检测器,第一色谱柱用于分离砷烷中的氧气、一氧化碳和二氧化碳,第二色谱柱用于分离砷烷中的硅烷、锗烷、磷烷、羰基硫和硫化氢,脉冲放电氦离子化检测器用于检测砷烷中的氧气、一氧化碳和二氧化碳,质量选择检测器用于检测砷烷中的硅烷、锗烷、磷烷、羰基硫和硫化氢。上述在线检测装置可以实时对砷烷中各组分的准确检测。     

特气分解爆炸的危险性

一、绪言在半导体元件制造过程中,使用以硅烷为主的各种原料气,其中,大多数是毒性大、易燃、易爆的气体,处理时必须考虑安全性。日本高压气体保安协会为防止以往不经常使用的危险性大的高压气体发生事故,规定了特气防灾标准。1984年11月,在日本神奈川县发生锗烷高压容器破裂事故,进口的锗烷容器在卸车时突然发生破裂。从以后的调查中得知,破裂的原因是锗烷分解产生爆炸所引起的。以前,几乎没有这些气体分解引起爆炸     

锗烷钢瓶的爆炸

1984年，在日本发生了一起锗烷钢瓶爆炸事故。随后，日本有关部门对这次事故进行了全面的调查，并写出了调查报告。为了引以为戒，把调查报告的有关内容介绍如下。     

黑龙江宇大特种气体科技开发有限公司

现将从国外引进的一套年产5t6N高纯硅烷提纯设备(在哈尔滨),及其生产高纯硅烷(6N)、高纯磷烷(6N)、高纯砷烷(6N)、高纯锗烷(6N)、高纯硼烷(6N)的提纯技术和高纯硅烷(6N)、高纯磷烷(6N)、高纯砷烷(6N)、高纯     

锗掺杂二氧化钛薄膜的溶胶凝胶法制备和性能研究

二氧化钛是一种无毒、廉价、稳定的半导体材料,被广泛用作光电化学太阳能电池的电极材料,适当掺杂可以增强其光电性能.以钛酸丁酯和四正丁氧基锗烷为主要原料,采用溶胶-凝胶提拉涂膜法制备了Ge掺杂的TiO_2薄膜.通过X射线衍射、扫描电镜、紫外-可见吸收光谱、电流-电压曲线等测试手段研究了薄膜的结晶性能、微观结构和光电性能随Ge掺杂量的变化规律.结果表明,Ge掺杂量x=0.10时,形成Ti_(1-x)Ge_xO_2固溶体,x=0.15时,形成非晶态.掺锗后薄膜表面颗粒密度增大,薄膜比较致密.随着Ge掺杂量的增加,吸收光谱吸收边蓝移,光电化学性能也得到一定提高.在Ge掺杂量为0.05时,光电流达到最大值17A/m~2.同时,研究了锗掺杂对光电流的影响.     

锗烷的分解爆炸：爆炸火焰的传播及爆炸极限压力

锗烷的分解爆炸──爆炸火焰的传播及爆炸极限压力堀口贞兹，近藤重雄，浦野洋吉１序言在半导体工业中，使用的气体种类很多，其中有的气体毒性和爆炸危险性很高，处理时必须注意。锗烷（ＧｅＨ４）是其中的一种。在硅系半导体制造中，它被用于ＣＶＤ过程、外延过程、扩散...     

Stranski-Krastanow growth of germanium on silicon nanowires

There have been extensive studies of germanium (Ge) grown on planar silicon (Si) substrates by the Stranski-Krastanow (S-K) mechanism. In this study, we present S-K growth of Ge on Si nanowires. The Si nanowires were grown at 500 degrees C by a vapor-liquid-solid (VLS) method, using silane (SiH4) as the gaseous precursor. By switching the gas source from SiH4 to germane (GeH4) during the growth and maintaining the growth conditions, epitaxial Ge islands deposited on the outer surface of the initially formed Si nanowires. Transmission electron microscopy (TEM), scanning TEM, and energy-dispersive X-ray spectroscopy techniques were utilized to identify the thin wetting layer and the three-dimensional Ge islands formed around the Si core nanowires. Cross-sectional TEM verified the surface faceting of the Si core nanowires as well as the Ge islands.     

Growth and thermal annealing of amorphous germanium carbide obtained by X-ray chemical vapor deposition

The growth of amorphous hydrogenated germanium carbide (a-GeCx:H) alloys was performed with high deposition rates by radiolysis chemical vapor deposition (X-ray) of germane/allene (GeH₄/C₃H₄, 70/30 %) mixtures at different irradiation times. The experimental deposition parameters were correlated to the composition, the structural features, and the optical coefficients of the films, as studied by different spectroscopic techniques, namely, IR, Raman, and UV–Vis. It was observed that the increase of irradiation time yields a more hydrogenated and more disordered material, with abundant formation of sp³ CH₂ groups, characterized by high band-gap values. In addition, we report the effects of thermal annealing on bonding structures and optical properties of the amorphous germanium carbon alloys. The decrease of hydrogen extent, together with the enhancement of sp² C bonds present and amorphous-to-crystalline germanium phase transition, contribute to a larger structural order of the material and to the reduction of the optical gap at higher temperatures.     

Sol-gel approach to preparing germanium disulphide

A sol-gel route to germanium disulphide reported in the literature, via dihydrogen sulphide treatment of germanium tetra-ethoxide, has been re-examined. It has been found that the reported X-ray diffraction pattern of the product previously obtained coincides with germanium dioxide and not disulphide. A repetition of the synthesis, and investigation of the product by infrared spectroscopy and X-ray diffractometry, shows that germanium disulphide is indeed formed but contamination by oxide is difficult to avoid.     

First principles total energy studies of the adsorption of germane on Ge(001)-c(2 × 4)

We perform first principles total energy calculations to study the energetics, and the atomic structure of the adsorption of germane (GeH₄) molecules on the Ge(001)-c(2 × 4) surface. The adsorption of a GeH₄ unit occurs after its dissociation into a germanium trihydride (GeH₃) and a hydrogen atom and a subsequent decomposition into a germanium dihydride (GeH₂) subunit and H atoms. Consequently, we first consider the adsorption of GeH₂ in two different configurations; the on-dimer and the intra-row geometries. Similar to the adsorption of SiH₂ and GeH₂ on Si(001), it is found that the on-dimer site is more stable than the intra-row geometry by 0.13 eV. However, in the adsorption of a GeH₂ fragment together with two H atoms we find that the intra-row geometry is energetically more favorable, again, similar to the adsorption of SiH₂ and GeH₂ (plus two H atoms) on the Si(001) surface.     

SiGe epitaxy on a 300 mm batch furnace

This work reports the feasibility of silicon and silicon germanium epitaxy using an ASM A412(TMa) LPCVD all quartz, hot wall, vertical batch furnace reactor using 100 wafer product loads. The very same furnace can be used for 25 wafer and 200 wafer load size, without any hardware changes, dependant on production needs. Following this approach a significant cost reduction for epitaxy in 300 mm high volume manufacturing is possible and enables new applications. The native oxide of the substrate was removed by wet chemical cleaning with time coupling of less than 1 h and subsequent in-situ low pressure hydrogen anneal prior to Si or SiGe deposition. The epitaxial layers were grown using silane and germane. The Si and SiGe layers have been characterized with ToFSIMS, XRD, Raman, AFM and TEM confirming excellent crystalline quality, layer thickness and within wafer SiGe stoichiometry uniformity.     

Synthesis of Multiple Anti-reflection Films by the Rational Function Method

Exact synthesis of three to six component quarter-wave broad-band anti-reflection systems for substrates of the germanium type (n-4.0) was performed by the rational function method. Frequency transformations were used to match the prototype Butterworth and Chebyshev functions to the rationalized transmissivities.     

Controlled synthesis of germanium nanowires and nanotubes with variable morphologies and sizes

We report on the controlled growth of germanium (Ge) nanostructures in the form of both nanowire (NW) and nanotube (NT) with ultrahigh aspect ratios and variable diameters. The nanostructures are grown inside a porous anodic aluminum oxide (AAO) template by low-temperature chemical vapor deposition (CVD) assisted by an electrodeposited metal nanorod catalyst. Depending on the choice of catalytic metals (Au, Ni, Cu, Co) and germane (GeH(4)) concentration during CVD, either Ge NWs or NTs can be synthesized at low growth temperatures (310-370 °C). Furthermore, Ge NWs and NTs with two or more branches can be grown from the same stem while using AAO with branched channels as templates. Transmission electron microscopy studies show that NWs are single crystalline and that branches grow epitaxially from the stem of NWs with a crystalline direction independent of diameter. As-grown NTs are amorphous but can crystallize via postannealing at 400 °C in Ar/H(2) atmosphere, with a wall thickness controllable between 6 and 18 nm in the CVD process. The yield and quality of the NTs are critically dependent on the choice of the catalyst, where Ni appears the best choice for Ge NT growth among Ni, Cu, Co, and Au. The synthesis of structurally uniform and morphologically versatile Ge nanostructures may open up new opportunities for integrated Ge-nanostructure-based nanocircuits, nanodevices, and nanosystems.     

Extraction of single <Superscript>71</Superscript>Ge atoms from the gallium target of a Ga-Ge neutrino detector

A method has been developed for the extraction of single ⁷¹Ge atoms from the gallium target of a Ga-Ge neutrino detector. The key features of this chemical process stem from the extremely low content of the element to be extracted in the sample (n × 10⁻²⁷ at %), the large sample weight (up to n × 10³ kg), the limited time available for the extraction and measurement of the extracted atoms (≤20 h), and small permissible loss (≤0.1%) of the target material at high degrees of ⁷¹Ge extraction (≥90%). The method involves forced generation and maintenance of a disperse system of liquid gallium droplets with an oxide surface film in an acid-peroxide solution. The small droplet size ensures a rapid ⁷¹Ge transfer from the bulk target to a small amount of gallium oxide. The ⁷¹Ge passes from the oxide film to the solution, is concentrated, and converts to germane, which is delivered to a proportional counter. We have assessed the completeness of germanium extraction in relation to process conditions. The results, in particular the completeness of extraction, have been verified in experiments with Ga + Ge mixtures at germanium concentrations of 10⁻⁴ and 10⁻¹⁷ to 10⁻¹⁶ wt %. The adequacy of the approaches used to develop the technology of the Ga-Ge detector is supported by satisfactory agreement between the solar neutrino fluxes obtained with gallium and gallium-chloride detectors.     

Potential energy of two structures of Σ = 110 1 1 tilt grain boundary in silicon and germanium with empirical potentials and tight-binding methods

Two atomic structures A and B of the Σ = 110 1 1 grain boundary were observed in silicon and germanium. We have performed a complete study of the stability of these two grain boundaries using some empirical potentials and also the semiempirical, tight-binding (TB) method. The TB method has confirmed the experimental observations at low temperatures. The A structure is more stable in silicon whereas for germanium the B structure is obtained. The empirical potentials, such as those of Keating (1966), Baraff et al. (1980) and of Stillinger and Weber (1985), give the A structure as the most stable for both germanium and silicon. The non-ability of these empirical potentials to make a difference between germanium and silicon and the advantage of TB method are discussed.