Diamond-like carbon thin films by microwave surface-wave plasma CVD aimed for the application of photovoltaic solar cells

The nitrogen doped diamond-like carbon (DLC) thin films were deposited on quartz and silicon substrates by a newly developed microwave surface-wave plasma chemical vapor deposition, aiming the application of the films for photovoltaic solar cells. For film deposition, we used argon as carrier gas, nitrogen as dopant and hydrocarbon source gases, such as camphor (C₁₀H₁₆O) dissolved with ethyl alcohol (C₂H₅OH), methane (CH₄), ethylene (C₂H₄) and acetylene (C₂H₂). The optical and electrical properties of the films were studied using X-ray photoelectron spectroscopy, Nanopics 2100/NPX200 surface profiler, UV/VIS/NIR spectroscopy, atomic force microscope, electrical conductivity and solar simulator measurements. The optical band gap of the films has been lowered from 3.1 to 2.4 eV by nitrogen doping, and from 2.65 to 1.9 eV by experimenting with different hydrocarbon source gases. The nitrogen doped (flow rate: 5 sccm; atomic fraction: 5.16%) film shows semiconducting properties in dark (i.e. 8.1 × 10^{− 4} Ω^{− 1} cm^{− 1}) and under the light illumination (i.e. 9.9 × 10^{− 4} Ω^{− 1} cm^{− 1}). The surface morphology of the both undoped and nitrogen doped films are found to be very smooth (RMS roughness ≤ 0.5 nm). The preliminary investigation on photovoltaic properties of DLC (nitrogen doped)/p-Si structure show that open-circuit voltage of 223 mV and short-circuit current density of 8.3 × 10^{− 3} mA/cm². The power conversion efficiency and fill factor of this structure were found to be 3.6 × 10^{− 4}% and 17.9%, respectively. The use of DLC in photovoltaic solar cells is still in its infancy due to the complicated microstructure of carbon bondings, high defect density, low photoconductivity and difficulties in controlling conduction type. Our research work is in progress to realize cheap, reasonably high efficiency and environmental friendly DLC-based photovoltaic solar cells in the future.     

Synthesis of nitrogen incorporated diamond-like carbon thin films using microwave surface-wave plasma CVD

Nitrogenated diamond-like (DLC:N) carbon thin films have been deposited by microwave surface wave plasma chemical vapor deposition on silicon and quartz substrates, using argon gas, camphor dissolved in ethyl alcohol composition and nitrogen as plasma source. The deposited DLC:N films were characterized for their chemical, optical, structural and electrical properties through X-ray photoelectron spectroscopy, UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current–voltage characteristics. Optical band gap decreased (2.7 to 2.4 eV) with increasing Ar gas flow rate. The photovoltaic measurements of DLC:N / p-Si structure show that the open-circuit voltage (V_oc) of 168.8 mV and a short-circuit current density (J_sc) of 8.4 μA/cm² under light illumination (AM 1.5 100 mW/cm²). The energy conversion efficiency and fill factor were found to be 3.4 × 10^{− 4}% and 0.238 respectively.     

The role of pressure on thin amorphous carbon films deposited using microwave surface wave plasma CVD

We report the effects of gas composition pressure (GCP) on the optical, structural and electrical properties of thin amorphous carbon (a-C) films grown on p-type silicon and quartz substrates by microwave surface wave plasma chemical vapor deposition (MW SWP CVD). The films, deposited at various GCPs ranging from 50 to 110 Pa, were studied by UV/VIS/NIR spectroscopy, atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and current–voltage characteristics. The optical band gap of the a-C film was tailored to a relatively high range, 2.3–2.6 eV by manipulating GCPs from 50 to 110 Pa. Also, spin density strongly depended on the band gap of the a-C films. Raman spectra showed qualitative structured changes due to sp³/sp² carbon bonding network. The surfaces of the films are found to be very smooth and uniform (RMS roughness < 0.5 nm). The photovoltaic measurements under light illumination (AM 1.5, 100 mW/cm²) show that short-circuit current density, open-circuit voltage, fill factor and photo-conversion efficiency of the film deposited at 50 Pa were 6.4 μA/cm², 126 mV, 0.164 and 1.4 × 10^− 4% respectively.     

Boron-doped hydrogenated amorphous carbon films grown by surface-wave mode microwave plasma chemical vapor deposition

We report the effects of boron (B) doping on optical and structural properties of the hydrogenated amorphous carbon thin films grown by surface-wave mode microwave plasma (SW-MWP) chemical vapor deposition (CVD) on n-type silicon and quartz substrates at room temperature. Argon and acetylene were used as a carrier and carbon source gases respectively. Analytical methods such as X-ray photoelectron spectroscopy (XPS), Nanopics 2100/NPX200 surface profiler, JASCO V-570 UV/VIS/NIR spectroscopy, Fourier transform infrared spectroscopy (FT-IR) and Raman spectroscopy were employed to investigate the properties of the films. Low atomic concentration of B (0.08 at.%) was found in the doped film. The optical band gap of the undoped film was 2.6 eV and it decreased to 1.9 eV for the B-doped film. Structural property shows the crystalline structure of the film and it has changed after incorporating B as a dopant. The structural modifications of the films leading to being more graphite in nature were confirmed by the Raman and FT-IR characterization.     

Nitrogen incorporated diamond-like carbon films by microwave surface wave plasma CVD

Nitrogen incorporated diamond like carbon films have been deposited by microwave surface wave plasma chemical vapor deposition (MW-SWP-CVD), using methane (CH₄) as the source of carbon and with different nitrogen flow rates (N₂ / CH₄ flow ratios between 0 and 3). The influence of the nitrogen incorporation on the optical, structural properties and surface morphology of the carbon films were investigated using different spectroscopic techniques. The nitrogen has been incorporated into DLC:N films which was confirmed by the X-ray photoelectron spectroscopy (XPS) measurement. Moreover, the nitrogen incorporation was accompanied by a variation in the optical gap, which was attributed to the removal or creation of band tail states.     

Characteristics of nitrogen doped diamond-like carbon thin films grown by microwave surface-wave plasma CVD

Nitrogen doped diamond-like carbon (DLC:N) thin films were deposited on p-type silicon (p-Si) and quartz substrates by microwave (MW) surface-wave plasma (SWP) chemical vapor deposition (CVD) at low temperature (< 100 °C). For films deposition, argon (Ar: 200 sccm), acetylene (C₂H₂:10 sccm) and nitrogen (N: 5 sccm) were used as carrier, source and doping gases respectively. DLC:N thin films were deposited at 1000 W microwave power where as gas composition pressures were ranged from 110 Pa to 50 Pa. Analytical methods such as X-ray photoelectron spectroscopy (XPS), UV-visible spectroscopy, FTIR and Raman spectroscopy were employed to investigate the chemical, optical and structural properties of the DLC:N films respectively. The lowest optical gap of the film was found to be 1.6 eV at 50 Pa gas composition pressure.     

Effects of iodine doping on optoelectronic properties of diamond-like carbon thin films deposited by microwave surface wave plasma CVD

We report the effects of iodine (I) doping on the electrical and optical properties of diamond-like carbon (DLC) thin films grown on silicon and quartz substrates by microwave surface wave plasma chemical vapor deposition at low temperature (<100 °C). For film deposition, we used argon gas with methane or camphor dissolved with ethyl alcohol composition as plasma source. The optical gap and photoconductivity measurements of the samples were carried out before and after the iodine doping. The results show that optical gap dropped from 3.4 to 0.9 eV corresponding to nondoping to iodine-doping conditions, respectively. The photovoltaic measurements show that the open-circuit voltage (V_oc) and short-circuit current density (J_sc) of I-doped DLC film deposited on n-type silicon substrate under light illumination (AM1.5, 100 mW/cm²) were approximately 177 mV and 1.15 μA, respectively, and the fill factor was found to be 0.217.     

Mechanical properties of nanocrystalline diamond/amorphous carbon composite films prepared by microwave plasma chemical vapour deposition

Nanocrystalline diamond films (NCD) have been deposited by microwave plasma chemical vapour deposition from CH₄/N₂ mixtures with varying methane content. They consist of diamond nanocrystallites with sizes of 3–5 nm embedded in an amorphous matrix with grain boundary widths of 1–1.5 nm. The CH₄ content in the gas phase has almost no influence on the microscopic structure but a strong effect on the macroscopic structure and morphology. The mechanical and tribological properties of these films have been investigated by nanoindentation, nano tribo tests, and nano scratch tests. The hardness of a 4-μm-thick film deposited with 17% methane was about 40 GPa, the indentation modulus 387 GPa, and the elastic recovery 75%. Ball-on-disk tests against an Al₂O₃ ball revealed, after initially higher values, a friction coefficient of ≤0.1. Tribo tests and scratch tests proved a strong adhesion and a protective effect on silicon substrates. Finally, the correlations between the macroscopic structure of the films and their mechanical and tribological properties are discussed.     

Mechanical properties of DLC films prepared inside of micro-holes by pulse plasma CVD

Diamond-like carbon (DLC) films are metastable amorphous carbon materials with superior tribological characteristics. In order to improve wear resistance of micro-extrusion dies with numerous imperceptible holes, DLC films were deposited on the inner wall surface of model dies with holes of 2 and 0.9 mm in diameter, and 20 mm in depth by using pulse plasma CVD method. This paper will discuss how argon gas, deposition pressure and time affect the characteristics of films deposited on the inner wall surface of dies. This micro-coating method can be applied widely for inner wall surface treatment of components with thin holes.     

Microstructure and optical band gap control of DLC film deposited by pulsed discharge plasma CVD

DLC films were deposited on silicon and quartz glass substrates by pulsed discharge plasma chemical vapor deposition (CVD), where the plasma was generated by pulsed DC discharge in H₂–CH₄ gas mixture at about 90 Torr in pressure, and the substrates were located near the plasma. The repetition frequency and duty ratio of the pulse were 800 Hz and 20%, respectively. When CH₄ / (CH₄ + H₂) ratio, i.e. methane concentration (Cm), increased from 3 to 40%, C₂ species in the plasma was increased, and corresponding to the increase of C₂, deposition rate of the film was increased from about 0.2 to 2.4 μm/h. The absorption peaks of sp³C–H and sp²C–H structures were observed in the FT-IR spectra, and the peak of sp²C–H structure was increased with increasing Cm, showing that sp² to sp³ bonding ratio was increased when Cm was increased. Corresponding to these structural changes due to the increase of Cm, optical band gap (Eg) was decreased from 3 to 0.5 eV continuously when Cm was increased from 3 to 40%.     

The effect of nitrogen addition during high-rate homoepitaxial growth of diamond by microwave plasma CVD

The effect of nitrogen addition on growth rate, morphology and crystallinity during high-rate microwave plasma chemical vapor deposition (MPCVD) of diamond was investigated. Epitaxial diamond was grown on type Ib diamond (100) substrates using a 5-kW, 2.45-GHz microwave plasma CVD system with nitrogen addition in the methane and hydrogen source gases. In order to obtain high growth rates, we designed the substrate holders to generate high-density plasma. The growth rates ranged from 30 to 120 μm/h. The nitrogen addition enhanced the growth rate by a factor of 2 and was beneficial to create a macroscopic smooth (100) face avoiding the growth of hillocks. However, the (100) surfaces looked microscopically rough by bunched steps as the effect of nitrogen addition. The macroscopic smoothing during the growth enabled the long-term stable deposition required to obtain large crystals. The deposited diamond was characterized by optical microscope, Raman spectroscopy, cathodoluminescence spectroscopy and X-ray diffraction.     

Thermal stability of the optical properties of plasma deposited diamond-like carbon thin films

In present paper we studied the optical constants of the diamond-like carbon (DLC) films and their changes with annealing. The multisample modification of combined variable angle spectroscopic ellipsometry and near normal spectroscopic reflectometry was used. The optical constants of the DLC films were simulated by our recently published six-parameter dispersion model employing a parameterization of the density of electronic states (DOS). Based on the dispersion model parameters the density of π and σ electrons were evaluated. We showed that from our model and the independently determined hydrogen atomic fraction of the films before and after annealing the ratio between momentum matrix elements of π → π* and σ → σ* transitions and the correct sp³-to-sp² carbon bonding configuration ratio can be calculated. It is worth to notice that the first quantity is usually assumed to be equal to unity but we showed that this assumption may cause a significant error in the determination of the sp³-to-sp² ratio. Therefore, our suggested method represents a novelty in this field.     

Hall data analysis of heavily boron-doped CVD diamond films using a model considering an impurity band well separated from valence bands

We have performed a detailed analysis of Hall data taken in a temperature (T) region of 100-700 K for heavily boron-doped diamond thin films homoepitaxially grown using high power-density microwave plasma CVD method. Their substrates were composed of a high-quality undoped homoepitaxial CVD layer grown similarly on vicinal (001) high-pressure/high-temperature-synthesized Ib diamond. The atomic ratio of boron to carbon in the source gas was 8000 ppm. Hall data taken from each specimen at various T's demonstrated (1) a metallic behavior in the low T region well below room temperature and (2) a clear peak of the T dependence of positive Hall coefficients around 350 K. The latter suggests the presence of multi groups of holes having substantially different mobilities and energies. In fact, calculated curves based upon a multi-type-carrier transportation model can well reproduce the corresponding experimental data. The T dependences were analyzed through a fitting procedure for the various important parameters employed such as the activation energies from the valence bands to the energy-fluctuated acceptor levels and carrier mobilities averaged over the concerned bands. The present analysis strongly suggests as follows. (1) Almost T-independent density of holes with the lowest average mobility in each heavily boron-doped diamond film move in an impurity band, (2) light holes and heavy holes whose densities increase exponentially with increasing T run in the valence bands in the vicinities of their maxima at substantially higher mobilities than that in the impurity band, and (3) the impurity band is well separated in energy from the valence bands.     

Influence of plasma nitriding treatment on the adhesion of DLC films deposited on AISI 4140 steel by PVD magnetron sputtering

Duplex surface treatments composed of diamond like carbon (DLC) coating followed by plasma nitriding have drawn attention for a while. In this study, AISI 4140 steel substrates were plasma nitrided at different treatment temperatures and times. Then, DLC films were deposited on both untreated and plasma nitrided samples using PVD magnetron sputtering. The effect of different plasma nitriding temperatures and times on the structural, mechanical and adhesion properties of DLC coatings was investigated by XRD, SEM, microhardness tester and scratch tester, respectively. It was found that surface hardness, intrinsic stresses, layer thickness values and phase distribution in modified layers and DLC coating were the main factors on adhesion properties of duplex coating system. The surface hardness and residual stress values of AISI 4140 steel substrates significantly increased with both DLC coating and duplex surface treatment (plasma nitriding + DLC coating). Increasing plasma nitriding temperature and time also increased the diffusion depth and the thickness of modified layers. Hard surface layers led to a significant improvement on load bearing capacity of the substrate material. However, it was also determined that the process parameters, which provided lower intrinsic stresses, improved the adhesion properties of the duplex coating system.     

Thermally Induced Nano-Structural and Optical Changes of nc-Si:H Deposited by Hot-Wire CVD

We report on the thermally induced changes of the nano-structural and optical properties of hydrogenated nanocrystalline silicon in the temperature range 200–700 °C. The as-deposited sample has a high crystalline volume fraction of 53% with an average crystallite size of ~3.9 nm, where 66% of the total hydrogen is bonded as ≡Si–H monohydrides on the nano-crystallite surface. A growth in the native crystallite size and crystalline volume fraction occurs at annealing temperatures ≥400 °C, where hydrogen is initially removed from the crystallite grain boundaries followed by its removal from the amorphous network. The nucleation of smaller nano-crystallites at higher temperatures accounts for the enhanced porous structure and the increase in the optical band gap and average gap.     

Heat treatment effects on the structural and optical properties of thin Bi2(Se1-xTex)3 films

Thin layers of Bi₂-chalcogenides, in the form of Bi₂(Se_1-xTe_x)₃ films, were evaporated on glass substrates by means of the vacuum thermal evaporation. Microstructure of the as prepared layers was investigated by x-ray diffraction (XRD) analysis. Identifications of the surface morphology and roughness were determined via scanning electron microscope (SEM). Optical transmissivity spectra proved that the as prepared films have low transparency with growing trend upon increasing the wavelength beyond the infra-red region. Low transmittance was observed for the as prepared films. Heat treatment, in the form of temperature annealing, was carried out aiming at boosting the structural features and the materials transmissivity. Structural properties and surface features of the annealed films were probed also via XRD and SEM analyses. It was found that the crystal size increases while the micro-strain and the dislocation density decrease obviously due to annealing. It was also observed that the annealing process significantly enhances the materials transmission especially in the range of higher wavelengths. Optical band gap was studied after annealing at various temperatures. Notable change in the band gap value was observed as a result of annealing. The band gap of the undoped (Bi₂Se₃) materials showed significant rise from 0.14 to 1.79 eV due to annealing. Similarly, the Te-doped samples exhibited notable increase in their band gap values after annealing. For example, the optical band gap of the sample doped at x = 0.20 increased from 0.03 to 0.41 eV by annealing. On the other hand, transmittance was also enhanced by annealing. For samples treated at 250 °C for 3 h, their optical transmissivity is enhanced to over 99% at the visible near-IR range. Such significant enhancement can be ascribed to structural enhancements. With such enhancement in the optical transmissivity, optoelectronic applications including transparent electrode can be met.     

Optoelectronic properties of nitrogenated amorphous carbon films synthesized by microwave surface wave plasma chemical vapor deposition system

The n-type nitrogen doped amorphous carbon (a-C:N) thin films have been grown by microwave (MW) surface wave plasma (SWP) chemical vapor deposition (CVD) system on silicon, quartz and ITO substrates at different nitrogen flow rates (1 to 4 sccm). The effects of nitrogen doping on chemical, optical, structural and electrical properties were studied through X-ray photoelectron spectroscopy, Nanopics 2100/NPX200 surface profiler, UV/VIS/NIR spectroscopy, Raman spectroscopy and solar simulator measurements. Argon, acetylene and nitrogen are used as plasma sources. Optical band gap decreased and nitrogen atomic concentration (%) increased with increasing nitrogen flow rate as a dopant. The a-C:N/p-Si based device exhibits photovoltaic behavior under illumination (AM 1.5, 100 mW/cm²), with a maximum open-circuit voltage (V_oc), short-circuit current (J_sc) and fill factor of 4.2 mV, 7.4 μA/cm² and 0.25 respectively.     

Characterization of amorphous carbon films deposited by surface wave plasma CVD

Many dangling bonds in hydrogenated amorphous carbon (a-C:H) films are usually generated by bombardments of high-energy ion precursors in typical chemical vapor deposition (CVD). To generate low dangling bonds, a-C:H films should be deposited from low-energy radical species. Surface wave plasma (SWP) generates low-energy and high-density radicals. We prepare a-C:H films using SWP and investigate the relationship between the plasma characteristics and structures of a-C:H films. The microwave of the TM01 mode was introduced through the dielectric window and SWP generate under the dielectric window. An Ar and C₂H₂ plasma mixture mainly consists of neutral radical species, and the electron temperature is as low as 1 eV. Electron density significantly decreases with increasing distance from the dielectric window. The a-C:H films are prepared from these hydrocarbon and carbon low-energy radicals as main precursors. The sp² bonded network cluster size in a-C:H films increase with electron density in SWP. This structure change is the influence of the termination structure of clusters changing to CH from CH₃ and CH₂.     

Structural,electrical, and linear/nonlinear optical characteristics of thermally evaporated molybdenum oxide thin films

Homogeneous thin films of Molybdenum oxide (MoO₃) were grown on quartz and glass substrates using the thermal evaporation method. XRD results showed that the MoO₃ powder has a polycrystalline structure with an orthorhombic crystal system whereas the MoO₃ thin films have amorphous nature. SEM images showed that the MoO₃ thin films have a nearly uniform surfaces with worm-like shape grains. The film thickness influences on the linear and nonlinear optical characteristics of MoO₃ thin films that were examined using spectrophotometric measurements and from which, the linear optical constants of the MoO₃ thin films were estimated. The electronic transition type was determined as a direct allowed one. The values of the optical band gap were obtained to be in the range of 3.88–3.72 eV. The dispersion parameters, third-order nonlinear optical susceptibility, and the nonlinear refractive index of the MoO₃ thin films were determined and interpreted in the light of the single oscillator model. The temperature dependence of the DC electrical conductivity and the corresponding conduction mechanism for the MoO₃ films were investigated at temperatures ranging from 303 to 463 K.     

A consideration of ternary C-H-O diagram for diamond deposition using microwave in-liquid and gas phase plasma

The purpose of this study is to clarify the mechanism of diamond synthesis using an in-liquid plasma chemical vapor deposition (CVD) method. We investigated the chemical reactions from a liquid mixture of methanol and ethanol (in-liquid plasma CVD) and a gas mixture of methane and hydrogen (gas-phase CVD). Carbon monoxide (CO) is firstly synthesized and then a chemical reaction using the remaining carbon (C) and hydrogen (H) is induced to synthesize a carbon substance. Residual H radicals act as an etchant removing the incompletely binding carbon atom that hinders diamond crystal growth. From spectroscopic measurements, CO peaks were clearly observed when the oxygen component is contained in the raw materials. From the experimental results of carbon deposits using various liquid and gas mixtures as the raw materials, we found that the region of the remaining H and C after CO synthesis satisfying H/C > 20 is necessary to synthesize diamonds using in-liquid plasma CVD method. The region of H/C > 20 in the Bachmann C-H-O diagram nearly agrees with the experimental results of synthesizing diamonds.