Printable CsPbI3 Perovskite Solar Cells with PCE of 19% via an Additive Strategy

All-inorganic CsPbI₃ holds promise for efficient tandem solar cells, but reported fabrication techniques are not transferrable to scalable manufacturing methods. Herein, printable CsPbI₃ solar cells are reported, in which the charge transporting layers and photoactive layer are deposited by fast blade-coating at a low temperature (≤100 °C) in ambient conditions. High-quality CsPbI₃ films are grown via introducing a low concentration of the multifunctional molecular additive Zn(C₆F₅)₂, which reconciles the conflict between air-flow-assisted fast drying and low-quality film including energy misalignment and trap formation. Material analysis reveals a preferential accumulation of the additive close to the perovskite/SnO₂ interface and strong chemisorption on the perovskite surface, which leads to the formation of energy gradients and suppressed trap formation within the perovskite film, as well as a 150 meV improvement of the energetic alignment at the perovskite/SnO₂ interface. The combined benefits translate into significant enhancement of the power conversion efficiency to 19% for printable solar cells. The devices without encapsulation degrade only by ≈2% after 700 h in air conditions.     

In Situ Back‐Contact Passivation Improves Photovoltage and Fill Factor in Perovskite Solar Cells

Organic–inorganic hybrid perovskite solar cells (PSCs) have seen a rapid rise in power conversion efficiencies in recent years; however, they still suffer from interfacial recombination and charge extraction losses at interfaces between the perovskite absorber and the charge–transport layers. Here, in situ back‐contact passivation (BCP) that reduces interfacial and extraction losses between the perovskite absorber and the hole transport layer (HTL) is reported. A thin layer of nondoped semiconducting polymer at the perovskite/HTL interface is introduced and it is shown that the use of the semiconductor polymer permits—in contrast with previously studied insulator‐based passivants—the use of a relatively thick passivating layer. It is shown that a flat‐band alignment between the perovskite and polymer passivation layers achieves a high photovoltage and fill factor: the resultant BCP enables a photovoltage of 1.15 V and a fill factor of 83% in 1.53 eV bandgap PSCs, leading to an efficiency of 21.6% in planar solar cells.     

Efficient and Stable CsPbI3 Solar Cells via Regulating Lattice Distortion with Surface Organic Terminal Groups

All‐inorganic cesium lead iodide perovskites (CsPbI₃) are promising wide‐bandgap materials for use in the perovskite/silicon tandem solar cells, but they easily undergo a phase transition from a cubic black phase to an orthorhombic yellow phase under ambient conditions. It is shown that this phase transition is triggered by moisture that causes distortion of the corner‐sharing octahedral framework ([PbI₆]^4?). Here, a novel strategy to suppress the octahedral tilting of [PbI₆]^4? units in cubic CsPbI₃ by systematically controlling the steric hindrance of surface organic terminal groups is provided. This steric hindrance effectively prevents the lattice distortion and thus increases the energy barrier for phase transition. This mechanism is verified by X‐ray diffraction measurements and density functional theory calculations. Meanwhile, the formation of an organic capping layer can also passivate the surface electronic trap states of perovskite absorber. These modifications contribute to a stable power conversion efficiency (PCE) of 13.2% for the inverted planar perovskite solar cells (PSCs), which is the highest efficiency achieved by the inverted‐structure inorganic PSCs. More importantly, the optimized devices retained 85% of their initial PCE after aging under ambient conditions for 30 days.     

Dual Passivation of CsPbI3 Perovskite Nanocrystals with Amino Acid Ligands for Efficient Quantum Dot Solar Cells

Inorganic CsPbI₃ perovskite quantum dot (PQD) receives increasing attention for the application in the new generation solar cells, but the defects on the surface of PQDs significantly affect the photovoltaic performance and stability of solar cells. Herein, the amino acids are used as dual‐passivation ligands to passivate the surface defects of CsPbI₃ PQDs using a facile single‐step ligand exchange strategy. The PQD surface properties are investigated in depth by combining experimental studies and theoretical calculation approaches. The PQD solid films with amino acids as dual‐passivation ligands on the PQD surface are thoroughly characterized using extensive techniques, which reveal that the glycine ligand can significantly improve defect passivation of PQDs and therefore diminish charge carrier recombination in the PQD solid. The power conversion efficiency (PCE) of the glycine‐based PQD solar cell (PQDSC) is improved by 16.9% compared with that of the traditional PQDSC fabricated with Pb(NO₃)₂ treating the PQD surface, owning to improved charge carrier extraction. Theoretical calculations are carried out to comprehensively understand the thermodynamic feasibility and favorable charge density distribution on the PQD surface with a dual‐passivation ligand.     

Interface Engineering for All‐Inorganic CsPbI2Br Perovskite Solar Cells with Efficiency over 14%

In this work, a SnO₂/ZnO bilayered electron transporting layer (ETL) aimed to achieve low energy loss and large open‐circuit voltage (V_oc) for high‐efficiency all‐inorganic CsPbI₂Br perovskite solar cells (PVSCs) is introduced. The high‐quality CsPbI₂Br film with regular crystal grains and full coverage can be realized on the SnO₂/ZnO surface. The higher‐lying conduction band minimum of ZnO facilitates desirable cascade energy level alignment between the perovskite and SnO₂/ZnO bilayered ETL with superior electron extraction capability, resulting in a suppressed interfacial trap‐assisted recombination with lower charge recombination rate and greater charge extraction efficiency. The as‐optimized all‐inorganic PVSC delivers a high V_oc of 1.23 V and power conversion efficiency (PCE) of 14.6%, which is one of the best efficiencies reported for the Cs‐based all‐inorganic PVSCs to date. More importantly, decent thermal stability with only 20% PCE loss is demonstrated for the SnO₂/ZnO‐based CsPbI₂Br PVSCs after being heated at 85 °C for 300 h. These findings provide important interface design insights that will be crucial to further improve the efficiency of all‐inorganic PVSCs in the future.     

Tailoring C60 for Efficient Inorganic CsPbI2Br Perovskite Solar Cells and Modules

Although inorganic perovskite solar cells (PSCs) are promising in thermal stability, their large open-circuit voltage (V_OC) deficit and difficulty in large-area preparation still limit their development toward commercialization. The present work tailors C₆₀ via a codoping strategy to construct an efficient electron-transporting layer (ETL), leading to a significant improvement in V_OC of the inverted inorganic CsPbI₂Br PSC. Specifically, tris(pentafluorophenyl)borane (TPFPB) is introduced as a dopant to lower the lowest unoccupied molecular orbital (LUMO) level of the C₆₀ layer by forming a Lewis acidic adduct. The enlarged free energy difference provides a favorable enhancement in electron injection and thereby reduces charge recombination. Subsequently, a nonhygroscopic lithium salt (LiClO₄) is added to increase electron mobility and conductivity of the film, leading to a reduction in the device hysteresis and facilitating the fabrication of a large-area device. Finally, the as-optimized inorganic CsPbI₂Br PSCs gain a champion power conversion efficiency (PCE) of 15.19%, with a stabilized power output (SPO) of 14.21% (0.09 cm²). More importantly, this work also demonstrates a record PCE of 14.44% for large-area inorganic CsPbI₂Br PSCs (1.0 cm²) and reports the first inorganic perovskite solar module with the excellent efficiency exceeding 12% (10.92 cm²) by a self-developed quasi-curved heating method.     

基于对氯苄胺的2D/3D钙钛矿太阳能电池

三维(3D)有机–无机金属卤化物钙钛矿薄膜的表面和晶界处存在大量缺陷,容易导致载流子的非辐射复合并加快3D钙钛矿分解,进而影响钙钛矿太阳能电池(PSCs)能量转换效率(PCE)及稳定性.本研究通过引入对氯苄胺阳离子,与3D钙钛矿薄膜及其表面过剩的碘化铅反应后原位形成了二维(2D)钙钛矿,实现了对3D钙钛矿薄膜表面和晶界...     

High Performance Inverted RbCsFAPbI3 Perovskite Solar Cells Based on Interface Engineering and Defects Passivation

Lead halide-based perovskites solar cells (PSCs) are intriguing candidates for photovoltaic technology due to their high efficiency, low cost, and simple fabrication processes. Currently, PSCs with efficiencies of >25% are mainly based on methylammonium (MA)-free and bromide (Br) free, formamide lead iodide (FAPbI₃)-based perovskites, because MA is thermally unstable due to its volatile nature and Br incorporation will induce blue shift in the absorption spectrum. Therefore, MA-free, Br-free formamidine-based perovskites are drawing huge research attention in recent years. The hole transporting layer (HTL) is crucial in fabricating highly efficient and stable inverted p-i-n structured PSCs by enhancing charge extraction, lowering interfacial recombination, and altering band alignment, etc. Here, this work employs a NiO_x/PTAA bi-layer HTL combined with GuHCl (guanidinium hydrochloride) additive engineering and PEAI (phenylethylammonium iodide) passivation strategy to optimize the charge carrier dynamics and tune defects chemistry in the MA-free, Br-free RbCsFAPbI₃-based perovskite absorber, which boosts the device efficiency up to 22.78%. Additionally, the device retains 95% of its initial performance under continuous 1 sun equivalent LED light illumination at 45 °C for up to 500 h.     

Dual Interfacial Design for Efficient CsPbI2Br Perovskite Solar Cells with Improved Photostability

A synergic interface design is demonstrated for photostable inorganic mixed‐halide perovskite solar cells (PVSCs) by applying an amino‐functionalized polymer (PN4N) as cathode interlayer and a dopant‐free hole‐transporting polymer poly[5,5′‐bis(2‐butyloctyl)‐(2,2′‐bithiophene)‐4,4′‐dicarboxylate‐alt‐5,5′‐2,2′‐bithiophene] (PDCBT) as anode interlayer. First, the interfacial dipole formed at the cathode interface reduces the workfunction of SnO₂, while PDCBT with deeper‐lying highest occupied molecular orbital (HOMO) level provides a better energy‐level matching at the anode, leading to a significant enhancement in open‐circuit voltage (V_oc) of the PVSCs. Second, the PN4N layer can also tune the surface wetting property to promote the growth of high‐quality all‐inorganic perovskite films with larger grain size and higher crystallinity. Most importantly, both theoretical and experimental results reveal that PN4N and PDCBT can interact strongly with the perovskite crystal, which effectively passivates the electronic surface trap states and suppresses the photoinduced halide segregation of CsPbI₂Br films. Therefore, the optimized CsPbI₂Br PVSCs exhibit reduced interfacial recombination with efficiency over 16%, which is one of the highest efficiencies reported for all‐inorganic PVSCs. A high photostability with a less than 10% efficiency drop is demonstrated for the CsPbI₂Br PVSCs with dual interfacial modifications under continuous 1 sun equivalent illumination for 400 h.     

Defect‐Engineering‐Enabled High‐Efficiency All‐Inorganic Perovskite Solar Cells

The emergence of cesium lead iodide (CsPbI₃) perovskite solar cells (PSCs) has generated enormous interest in the photovoltaic research community. However, in general they exhibit low power conversion efficiencies (PCEs) because of the existence of defects. A new all‐inorganic perovskite material, CsPbI₃:Br:InI₃, is prepared by defect engineering of CsPbI₃. This new perovskite retains the same bandgap as CsPbI₃, while the intrinsic defect concentration is largely suppressed. Moreover, it can be prepared in an extremely high humidity atmosphere and thus a glovebox is not required. By completely eliminating the labile and expensive components in traditional PSCs, the all‐inorganic PSCs based on CsPbI₃:Br:InI₃ and carbon electrode exhibit PCE and open‐circuit voltage as high as 12.04% and 1.20 V, respectively. More importantly, they demonstrate excellent stability in air for more than two months, while those based on CsPbI₃ can survive only a few days in air. The progress reported represents a major leap for all‐inorganic PSCs and paves the way for their further exploration in order to achieve higher performance.     

Small Molecules Functionalized Zinc Oxide Interlayers for High Performance Low-Temperature Carbon-Based CsPbI2Br Perovskite Solar Cells

The charge recombination resulting from bulk defects and interfacial energy level mismatch hinders the improvement of the power conversion efficiency (PCE) and stability of carbon-based inorganic perovskite solar cells (C-IPSCs). Herein, a series of small molecules including ethylenediaminetetraacetic acid (EDTA) and its derivatives (EDTA-Na and EDTA-K) are studied to functionalize the zinc oxide (ZnO) interlayers at the SnO₂/CsPbI₂Br buried interface to boost the photovoltaic performance of low-temperature C-IPSCs. This strategy can simultaneously passivate defects in ZnO and perovskite films, adjust interfacial energy level alignment, and release interfacial tensile stress, thereby improving interfacial contact, inhibiting ion migration, alleviating charge recombination, and promoting electron transport. As a result, a maximum PCE of 13.94% with a negligible hysteresis effect is obtained, which is one of the best results reported for low-temperature CsPbI₂Br C-IPSCs so far. Moreover, the optimized devices without encapsulation demonstrate greatly improved operational stability.     

TiO2形态对MAPbBr3太阳电池转化效率影响机制的研究

二氧化钛(TiO₂)是钙钛矿太阳电池中最常用的电子传输材料, 研究发现其形态对MAPbBr₃太阳电池的器件转化效率可产生直接影响。研究不同形态TiO₂对钙钛矿太阳电池转化效率的影响机制对进一步认识此类太阳电池的工作机理十分必要。本工作使用旋涂法制备了不同形态的TiO₂, 而后采用反溶剂室温结晶的方法在TiO₂基底上进一步制备MAPbBr₃(MA = CH₃NH₃)薄膜, 并通过X射线光电子能谱(XPS)详细研究了TiO₂与MAPbBr₃接触界面的能级位置关系。研究结果表明: 不同形态的TiO₂ 在与钙钛矿接触后形成的导带差异不同; 不同的导带能级差可直接影响MAPbBr₃钙钛矿电池中电子的传递与收集, 进而影响电池的转化效率。     

Bridging the Buried Interface with Piperazine Dihydriodide Layer for High Performance Inverted Solar Cells

Given that it is closely related to perovskite crystallization and interfacial trap densities, buried interfacial engineering is crucial for creating effective and stable perovskite solar cells. Compared with the in-depth studies on the defect at the top perovskite interface, exploring the defect of the buried side of perovskite film is relatively complicated and scanty owing to the non-exposed feature. Herein, the degradation process is probed from the buried side of perovskite films with continuous illumination and its effects on morphology and photoelectronic characteristics with a facile lift-off method. Additionally, a buffer layer of Piperazine Dihydriodide (PDI₂) is inserted into the imbedded bottom interface. The PDI₂ buffer layer is able to lubricate the mismatched thermal expansion between perovskite and substrate, resulting in the release of lattice strain and thus a void-free buried interface. With the PDI₂ buffer layer, the degradation originates from the growing voids and increasing non-radiative recombination at the imbedded bottom interfaces are suppressed effectively, leading to prolonged operation lifetime of the perovskite solar cells. As a result, the power conversion efficiency of an optimized p-i-n inverted photovoltaic device reaches 23.47% (with certified 23.42%) and the unencapsulated devices maintain 90.27% of initial efficiency after 800 h continuous light soaking.     

Morphology and Performance Enhancement through the Strong Passivation Effect of Amphoteric Ions in Tin-based Perovskite Solar Cells

Despite the optoelectronic similarities between tin and lead halide perovskites, the performance of tin-based perovskite solar cells remains far behind, with the highest reported efficiency to date being ≈14%. This is highly correlated to the instability of tin halide perovskite, as well as the rapid crystallization behavior in perovskite film formation. In this work, l -Asparagine as a zwitterion plays a dual role in controlling the nucleation/crystallization process and improving the morphology of perovskite film. Furthermore, tin perovskites with l -Asparagine show more favorable energy-level matching, enhancing the charge extraction and minimizing the charge recombination, leading to an enhanced power conversion efficiency of 13.31% (from 10.54% without l -Asparagine) with remarkable stability. These results are also in good agreement with the density functional theory calculations. This work not only provides a facile and efficient approach to controlling the crystallization and morphology of perovskite film but also offers guidelines for further improved performance of tin-based perovskite electronic devices.     

Modifying PTAA/Perovskite Interface via 4-Butanediol Ammonium Bromide for Efficient and Stable Inverted Perovskite Solar Cells

Inverted perovskite solar cells (IPSCs) have witnessed an impressive development in recent years. However, their efficiency is still significantly behind theoretical limits, and device instabilities hinder their commercialization. Two main obstacles to further enhancing their performance via one-step deposition are: 1) the unsatisfactory film quality of perovskite and 2) the poor surface contact. To address the above issues, 4-butanediol ammonium Bromide (BD) is utilized to passivate Pb²⁺ defects by forming Pb N bonds and fill vacancies of formamidinium ions at the buried surface of perovskite. The wettability of poly [bis (4-phenyl) (2,4,6-triMethylphenyl) amine] films is also improved due to the formation of hydrogen bonds between PTAA and BD molecules, resulting in better surface contacts and enhanced perovskite crystallinity. As a result, BD-modified perovskite thin films show a significant increase in the mean grain size, as well as a dramatic enhancement in the PL decay lifetime. The BD-treated device exhibits an efficiency of up to 21.26%, considerably higher than the control device. Moreover, the modified devices show dramatically enhanced thermal and ambient stability compared to the control ones. This methodology paves the way to obtain high-quality perovskite films for fabricating high-performance IPSCs.     

Pb–Sn–Cu Ternary Organometallic Halide Perovskite Solar Cells

Exploiting organic/inorganic hybrid perovskite solar cells (PSCs) with reduced Pb content is very important for developing environment‐friendly photovoltaics. Utilizing of Pb–Sn alloying perovskite is considered as an efficient route to reduce the risk of ecosystem pollution. However, the trade‐off between device performance and Sn substitution ratio due to the instability of Sn²⁺ is a current dilemma. Here, for the first time, the highly efficient Pb–Sn–Cu ternary PSCs are reported by partial replacing of PbI₂ with SnI₂ and CuBr₂. Sn²⁺ substitution results in a redshift of the absorption onset, whereas worsens the film quality. Interestingly, Cu²⁺ introduction can passivate the trap sites at the crystal boundaries of Pb–Sn perovskites effectively. Consequently, a power conversion efficiency as high as 21.08% in inverted planar Pb–Sn–Cu ternary PSCs is approached. The finding opens a new route toward the fabrication of high efficiency Pb–Sn alloying perovskite solar cells by Cu²⁺ passivation.     

Dopant-Free Polymer Hole Transport Materials for Highly Stable and Efficient CsPbI3 Perovskite Solar Cells

All-inorganic perovskite CsPbI₃ contains no volatile organic components and is a thermally stable photoactive material for wide-bandgap perovskite solar cells (PSCs); however, CsPbI₃ readily undergoes undesirable phase transitions due to the hygroscopic nature of the ionic dopants used in commonly used hole transport materials. In the current study, the popular donor material PM6 in organic solar cells is used as a hole transport layer (HTL). The benzodithiophene-based backbone-conjugated polymer requires no dopant and leads to a higher power conversion efficiency (PCE) than 2,2′,7,7′-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene (Spiro-OMeTAD). Moreover, PM6 also shows priorities in hole mobility, hydrophobicity, cascade energy level alignment, and even defect passivation of perovskite films. With PM6 as the dopant-free HTL, the PSCs achieve a champion PCE of 18.27% with a competitive fill factor of 82.8%. Notably, the present PCE is based on the dopant-free HTL in CsPbI₃ PSCs reported thus far. The PSCs with PM6 as the HTL retain over 90% of the initial PCE stored in a glovebox filled with N₂ for 3000 h. In contrast, the PSCs with Spiro-OMeTAD as the HTL maintain ≈80% of the initial PCE under the same conditions.     

Chemically Stable Black Phase CsPbI3 Inorganic Perovskites for High-Efficiency Photovoltaics

Research on chemically stable inorganic perovskites has achieved rapid progress in terms of high efficiency exceeding 19% and high thermal stabilities, making it one of the most promising candidates for thermodynamically stable and high-efficiency perovskite solar cells. Among those inorganic perovskites, CsPbI₃ with good chemical components stability possesses the suitable bandgap (≈1.7 eV) for single-junction and tandem solar cells. Comparing to the anisotropic organic cations, the isotropic cesium cation without hydrogen bond and cation orientation renders CsPbI₃ exhibit unique optoelectronic properties. However, the unideal tolerance factor of CsPbI₃ induces the challenges of different crystal phase competition and room temperature phase stability. Herein, the latest important developments regarding understanding of the crystal structure and phase of CsPbI₃ perovskite are presented. The development of various solution chemistry approaches for depositing high-quality phase-pure CsPbI₃ perovskite is summarized. Furthermore, some important phase stabilization strategies for black phase CsPbI₃ are discussed. The latest experimental and theoretical studies on the fundamental physical properties of photoactive phase CsPbI₃ have deepened the understanding of inorganic perovskites. The future development and research directions toward achieving highly stable CsPbI₃ materials will further advance inorganic perovskite for highly stable and efficient photovoltaics.     

Efficient Bifacial Passivation with Crosslinked Thioctic Acid for High-Performance Methylammonium Lead Iodide Perovskite Solar Cells

Defects, inevitably produced within bulk and at perovskite-transport layer interfaces (PTLIs), are detrimental to power conversion efficiency (PCE) and stability of perovskite solar cells (PSCs). It is demonstrated that a crosslinkable organic small molecule thioctic acid (TA), which can simultaneously be chemically anchored to the surface of TiO₂ and methylammonium lead iodide (MAPbI₃) through coordination effects and then in situ crosslinked to form a robust continuous polymer (Poly(TA)) network after thermal treatment, can be introduced into PSCs as a new bifacial passivation agent for greatly passivating the defects. It is also discovered that Poly(TA) can additionally enhance the charge extraction efficiency and the water-resisting and light-resisting abilities of perovskite film. These newly discovered features of Poly(TA) make PSCs herein achieve among the best PCE of 20.4% ever reported for MAPbI₃ with negligible hysteresis, along with much enhanced ultraviolet, air, and operational stabilities. Density functional theory calculations reveal that the passivation of MAPbI₃ bulk and PTLIs by Poly(TA) occurs through the interaction of functional groups ( COOH,  C S) in Poly(TA) with under-coordinated Pb²⁺ in MAPbI₃ and Ti⁴⁺ in TiO₂, which is supported by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy.     

Dual Defect-Passivation Using Phthalocyanine for Enhanced Efficiency and Stability of Perovskite Solar Cells

Semiconducting molecules have been employed to passivate traps extant in the perovskite film for enhancement of perovskite solar cells (PSCs) efficiency and stability. A molecular design strategy to passivate the defects both on the surface and interior of the CH₃NH₃PbI₃ perovskite layer, using two phthalocyanine (Pc) molecules (NP-SC₆-ZnPc and NP-SC₆-TiOPc) is demonstrated. The presence of lone electron pairs on S, N, and O atoms of the Pc molecular structures provides the opportunity for Lewis acid–base interactions with under-coordinated Pb²⁺ sites, leading to efficient defect passivation of the perovskite layer. The tendency of both NP-SC₆-ZnPc and NP-SC₆-TiOPc to relax on the PbI₂ terminated surface of the perovskite layer is also studied using density functional theory (DFT) calculations. The morphology of the perovskite layer is improved due to employing the Pc passivation strategy, resulting in high-quality thin films with a dense and compact structure and lower surface roughness. Using NP-SC₆-ZnPc and NP-SC₆-TiOPc as passivating agents, it is observed considerably enhanced power conversion efficiencies (PCEs), from 17.67% for the PSCs based on the pristine perovskite film to 19.39% for NP-SC₆-TiOPc passivated devices. Moreover, PSCs fabricated based on the Pc passivation method present a remarkable stability under conditions of high moisture and temperature levels.