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1.
A. Duarte  M. Vila  F.M. Costa 《Vacuum》2009,83(10):1291-1294
The deposition of titanium diboride (TiB2) films over tool steel substrates (AISI H13 premium/EN X40 CrMoV 5-1-1) is being investigated due to its excellent corrosion resistance and chemical stability against liquid aluminium. The use of nitrided steels as substrates for TiB2 deposition may contribute to increase its adhesion and the overall steel resistance in applications such as forging, extrusion and die casting of aluminium. Duplex coatings were obtained by the PVD deposition of TiB2 films over heat treated and nitrided steel using non-reactive DC magnetron sputtering from a TiB2 target, varying the substrate bias voltage. Well structured and crystalline TiB2 films were obtained for the selected deposition conditions, the best crystalline coatings being obtained for the positively biased substrates. Selected films produced over die-casting pins at a bias voltage of +50 V were tested for resistance to liquid aluminium soldering by immersion tests, and compared with the nitrided steel. The duplex TiB2 coating has a much larger chemical resistance to attack by molten aluminium alloy than the just nitrided steel. Where there is soldering, steel is rapidly attacked and a complex Al-Fe-Si intermetallic forms.  相似文献   

2.
Titanium oxide thin films (1–4 μm) were deposited on the porous Hastelloy-X substrates using the pulsed – DC magnetron sputtering technique and characterized by X–ray diffraction (XRD) and scanning electron microscopy (SEM) methods. Firstly, the films were deposited at different distances between the magnetron and the substrate, as magnetron current and pressure in the deposition chamber were constant. The distance between the magnetron and the substrate was changed from 3 cm to 7 cm, and the deposition rate varied between 10.1 nm/min to 6.0 nm/min. Secondly, pressure influence for the deposition rate was investigated. The deposition rate decreased nearly 15% with the decrease of oxygen pressure from 1.3 to 6.0 Pa. Finally, the influence of the bias (applied to the substrate for the increase of deposition rate) on thin films phase and microstructure was investigated.The experimental results showed that formation of pure titanium oxide thin films was observed in all experimental cases. Only crystallite sizes and orientation were changed. The results showed that there is a possibility to change porosity and uniformity of the growing film by changing oxygen partial pressure during deposition or bias application to the substrate. The existence of columnar boundaries and nanocrystalline structure in the films was observed.  相似文献   

3.
FeS2 polycrystalline films were prepared on amorphous glass, monocrystalline Si (1 0 0), polycrystalline Al and microcrystalline TiO2 film substrates by sulfuration annealing of magnetron sputtered iron films. The crystal microstructure and orientation distribution of the films were investigated. The FeS2 films formed on Si (1 0 0) and glass substrates have relatively fine and uniform grains and small lattice distortion at the interface between the film and substrate but insignificant preferred orientation. The FeS2 films formed on Al or TiO2 substrates have relatively inhomogeneous microstructure, large lattice distortion at the interface and a (2 0 0) or (2 2 0) preferred orientation. High strain energy at the interface should be responsible for the preferred orientation and inhomogeneous microstructure in the films.  相似文献   

4.
In this work, sputtered TiC/amorphous C thin films have been developed in order to be applied as potential barrier coating for interfering of Ti ions from pure Ti or Ti alloy implants. Our experiments were based on magnetron sputtering method, because the vacuum deposition provides great flexibility for manipulating material chemistry and structure, leading to films and coatings with special properties. The films have been deposited on silicon (001) substrates with 300 nm thick oxidized silicon sublayer at 200 °C deposition temperature as model substrate. Transmission electron microscopy has been used for structural investigations. Thin films consisted of ~ 20 nm TiC columnar crystals embedded by 5 nm thin amorphous carbon matrix. MG63 osteoblast cells have been applied for in vitro study of TiC nanocomposites. The cell culture tests give strong evidence of thin films biocompatibility.  相似文献   

5.
《Materials Research Bulletin》2003,38(14):1841-1849
Thin films of TaOx were deposited on Si(1 0 0) by radio-frequency magnetron sputtering at substrate temperatures of 25, 100, 200, 300, 400, and 500 °C. The properties of TaOx thin films deposited with different oxygen-to-argon gas ratios and substrate temperatures were evaluated. The results show that the films with lowest leakage current density were obtained at ambient temperature with an oxygen mixture ratio (OMR) of 60% and the oxygen-to-tantalum ratio has a minimum with increasing deposition substrate temperature. From the current–voltage (IV) characteristics of the TaOx thin films as a function of deposition substrate temperature, we found that the leakage current density in the TaOx thin films increases with increasing deposition substrate temperature. The higher leakage current density in the TaOx films is correlated to the oxygen deficiency in TaOx films and crystallization at higher deposition temperature.  相似文献   

6.
《Thin solid films》2006,494(1-2):161-167
The chromium nitride coatings have been prepared by the bipolar symmetric pulsed DC magnetron reactive sputtering process at 2 kHz and 20 kHz pulse frequencies, respectively. Different substrate bias was applied with a pulsed DC bias unit with 50 kHz pulse frequency. Oscilloscope traces of the IV waveforms indicate high power and high current density outputs during the symmetric bipolar pulsed mode. It is concluded that the (200) orientation of CrN films is observed. The grain size decreases with increasing pulse frequency and substrate bias. The substrate bias has a strong influence on the mechanical properties of CrN films. The scratch tests of the CrN coatings show that almost only tiny chipping failure is occurred. Sufficient adhesion strength quality of the coating is also observed. The substrate bias for the deposition of CrN films with sufficient hardness and adhesion properties combination is − 290 V at 20 kHz and − 408 V at 2 kHz pulse frequency, respectively.  相似文献   

7.
A RF magnetron sputter system was used to deposit lithium niobate (LiNbO3) thin films on (1 1 1)-oriented Si substrates. An optimal sputtering condition with RF power of 100 W, Ar/O2 ratio of 1 and substrate temperature of 575 °C was investigated. The smallest surface roughness of 6.0 nm for the deposited LiNbO3 was measured using atomic force microscopy. The crystallinity was examined by low angle X-ray diffractometer. Using the SOPRA GES5 spectroscopic ellipsometer, the associated refractive index and extinction coefficient as a function of wavelength were measured. High optical performance with crystallinity structure of the deposited LiNbO3 thin films was demonstrated.  相似文献   

8.
The article reports on the oxide nanocomposite coatings reactively sputtered by a pulsed dual magnetron and is divided into two parts. The first part briefly describes main problems in the reactive sputtering of oxides, i.e. low deposition rate aD and arcing at the target surface and then focuses on the discharge of the dual magnetron. The ways how aD can be increased and arcing eliminated are shown. The second part is devoted to transparent oxide coatings. Two types of oxide coatings are described in detail: (1) Si–Zr–O coatings containing ≤5 at.% of Zr and (2) Zr–Al–O coatings with Zr/Al > 1. It is shown that (a) Si–Zr–O coatings exhibit high thermal stability up to 1500 °C, almost 100% optical transparency and can be deposited with very high aD  800 nm/min from a molten magnetron target and (b) Zr–Al–O coatings with relatively high hardness H  18–19 GPa, low effective Young’s modulus E1 satisfying the ratio H/E1 > 0.1 are highly elastic (the elastic recovery We > 70%) and exhibit an enhanced resistance to cracking. The last finding is of key importance for development of new hard coatings with enhanced toughness.  相似文献   

9.
《Thin solid films》2006,494(1-2):53-57
Thin films of cubic boron nitride (c-BN) and B4C/BCN/c-BN multilayers, were deposited by r.f. (13.56 MHz) multi-target magnetron sputtering from high-purity (99.99%) h-BN and a (99.5%) B4C targets, in an Ar (90%)/N2 (10%) gas mixture. Films were deposited onto silicon substrates with (100) orientations at 300 °C, with r.f. power density near 7 W/cm2. In order to obtain the highest fraction of the c-BN phase, an r.f. substrate bias voltage between − 100 and − 300 V was applied during the initial nucleation process and − 50 to − 100 V during the film growth. Additionally, B4C and BCN films were deposited and analyzed individually. For their deposition, we varied the bias voltage of the B4C films between − 50 and − 250 V, and for the BCN coatings, the nitrogen gas flow from 3% to 12%. A 300-nm-thick TiN buffer layer was first deposited to improve the adhesion of all samples. X-ray diffraction patterns revealed the presence of c-BN (111) and h-BN phases. FTIR spectroscopy measurements indicate the presence of a peak at 780 cm 1 referred to as “out-of-plane” h-BN vibration mode; another peak at 1100 cm 1 corresponds to the c-BN TO mode and the “in-plane” vibration mode of the h-BN at 1400 cm 1. BN films deposited at 300 °C at a pressure of 4.0 Pa and under − 150 V of nucleation r.f. bias, applied for 35 min, presented the highest c-BN fraction, near 85%. By using 32 layers, it was possible to deposit a 4.6-μm-thick c-BN film with adequate mechanical properties and good adhesion to the substrate.  相似文献   

10.
FePt multilayer films were deposited on Si(1 0 0) substrate with thermally grown SiO2 film and sputtered Ag underlayer at room temperature by dc magnetron sputtering and subsequently annealing in vacuum. Experimental results suggest that proper thickness of Ag underlayer and slightly rich of Fe content can effectively induce the (0 0 1) texture of FePt films. A Fe57.4Pt42.6 thin film on the 8 nm Ag underlayer exhibits a large perpendicular coercivity of 7.6 kOe with magnetic remanence close to 1.  相似文献   

11.
TiO2 and (NdyTi1  y)Ox thin films were deposited by reactive magnetron sputtering process from mosaic Ti–Nd targets and characterised by X-ray diffraction (XRD), Raman optical spectroscopy and nanoindentation technique. XRD measurements revealed that as-prepared titanium dioxide and TiO2 thin films with 4 and 7 at.% of Nd had nanocrystalline rutile structure, while coatings with larger amount of Nd were amorphous. Raman spectroscopy investigations showed that the increase of the neodymium concentration caused amorphisation of the coatings and hindered their crystal growth. All as-prepared coatings were transparent in the visible wavelength range with a transmittance of approximately 80%. The refractive index and extinction coefficient of the thin films gradually decreased with the increase of the neodymium concentration. Micro-mechanical properties, i.e. hardness and elastic modulus, were determined using traditional load-controlled nanoindentation testing and continuous stiffness measurements. The highest hardness and elastic modulus values were obtained for thin films with 7 at.% of Nd and were approximately 14.8 GPa and 166.3 GPa, respectively.  相似文献   

12.
LiCoO2 thin films were fabricated on Al substrate by direct current magnetron sputtering method. The effects of Ar/O2 gas rates and annealing temperatures were investigated. Crystal structures and surface morphologies of the deposited films were investigated by X-ray diffraction, Raman scattering spectroscopy and field emission scanning electron microscopy. The as-deposited LiCoO2 thin films exhibited amorphous structure. The crystallization starts at the annealing temperature over 400 °C. However, the annealed films have the partially disordered structure without completely ordered crystalline structure even at 600 °C annealing. The electrochemical properties of the LiCoO2 films were investigated by the charge–discharge and cycle measurements. The 500 °C annealing film has the highest capacity retention rate of 78.2% at 100th cycles.  相似文献   

13.
Multi-element (AlCrTaTiZr)N films were deposited on cemented carbide and M2 steel substrates by reactive RF magnetron sputtering. Prior to nitride film deposition, an interlayer between the film and the substrate was introduced to improve adhesion property. The influence of interlayer materials (Ti, Cr, and AlCrTaTiZr alloy) and interlayer thickness (0–400 nm) on the adhesion and tribological properties of films was investigated. In this study, the nitride film deposited at RN = 20% exhibited the highest hardness (35.2 GPa) and the lowest residual compressive stress (? 1.52 GPa), and was prepared as the top layer for further testing. The interlayer materials can effectively improved the film adhesion onto the cemented carbide substrates, and the adhesive failure was not observed even under the normal load of 100 N. For M2 steel substrates, only the Cr interlayer can slightly improve the film adhesion, and the cohesive and adhesive failure can be found at relatively lower applied load. The optimal interlayer thickness was 100–200 nm for the 1 µm-thick (AlCrTaTiZr)N film and can be related to the stress evolution. The friction coefficient and wear rate for the (AlCrTaTiZr)N film were 0.82 and 4.9 × 10? 6 mm3/Nm, respectively, and almost kept constant under different interlayer materials and thickness. The worn-through event of the nitride film during tribological test occurred easily owing to its poor adhesion behavior, and can be improved by interlayer additions.  相似文献   

14.
《Materials Letters》2006,60(13-14):1617-1621
Cuprous oxide (Cu2O) thin films were deposited by dc reactive magnetron sputtering technique onto glass substrates by sputtering of pure copper target in a mixture of argon and oxygen gases under various oxygen partial pressures in the range 8 × 10 3–1 × 10 1 Pa at a constant substrate temperature of 473 K and a sputtering pressure of 4 Pa. The dependence of cathode potential on the oxygen partial pressure was explained in terms of cathode poisoning effect. The influence of oxygen partial pressure on the structural and optical properties of Cu2O films was systematically studied. Single phase films of Cu2O were obtained at an oxygen partial pressure of 2 × 10 2 Pa. The films formed at an oxygen partial pressure of 2 × 10 2 Pa were polycrystalline with cubic structure and exhibited an optical band gap of 2.04 eV.  相似文献   

15.
BaTi2O5 thin films were prepared on MgO (1 0 0) substrates by pulsed laser deposition. The effect of substrate temperature (Tsub) on the structural and optical properties of the films, such as crystal phase, preferred orientation, crystallinity, surface morphology, optical transmittance and bandgap energy, was investigated. The preferred orientation of the films changed form (7 1 0) to (0 2 0) depending on Tsub, and the b-axis oriented BaTi2O5 thin film could be obtained at Tsub = 973–1023 K. The surface morphology of the films was different with changing Tsub, which showed a dense surface with an elongated granular texture at Tsub = 973–1023 K. The crystallinity and surface roughness increased at the elevated substrate temperatures. The as-deposited BaTi2O5 thin films were highly transparent with an optical transmittance of ~70%. The bandgap energy was found to decrease with increasing substrate temperature, from 3.76 eV for Tsub = 923 K to 3.56 eV for Tsub = 1023 K.  相似文献   

16.
The performance of tribological coatings depends greatly on the adhesion strength between the coatings and substrates. In this work, we investigated the influence of the ion implantation energy of nitrogen on the adhesion and surface properties of TiN deposited on aluminum substrate. Aluminum samples were implanted with 15 keV, 30 keV and 40 keV nitrogen ions before TiN films were deposited using magnetron sputtering in a custom-designed multi-functional ion implanter. The adhesion properties of the implanted TiN films were assessed using nano-scratch tests and were observed to vary with the nitrogen ion implantation energy. Our frictional test results show that an appropriate ion implantation energy and dose can improve the frictional behavior of TiN films deposited on aluminum.  相似文献   

17.
Lead-free ferroelectric (K, Na)NbO3 (KNN) thin films (~200 nm thickness) were prepared using a modified sol–gel method by mixing K and Na acetates with the Nb–tartarate complex, deposited by spin-coating method on Pt/Al2O3 and Pt/SiO2/Si substrates and sintered at 650 °C. Pure perovskite phase of K0.65Na0.35NbO3 in film on silicon were revealed, while film on alumina contained also small amount of secondary pyrochlore Na2Nb8O21 phase. Homogenous microstructure of film on Si substrate was smoother with the lower roughness (~7.4 nm) and contained spherical (~50 nm) particles. The mechanical properties of films were characterized by nanoindentation. The modulus and hardness of KNN films were calculated from their composite values of film/substrate systems using discontinuous and modified Bhattacharya model, respectively. The KNN film modulus was higher on alumina substrate (91 GPa) in comparison with silicon substrate (71 GPa) and values of film hardness were the same (4.5 GPa) on both substrates.  相似文献   

18.
In the present research, self-cleaning Al2O3–TiO2 thin films were successfully prepared on glass substrate using a sol–gel technique for photocatalytic applications. We investigated the phase structure, microstructure, adhesion and optical properties of the coatings by using XRD, SEM, scratch tester and UV/Vis spectrophotometer. Four different solutions were prepared by changing Al/Ti molar ratios such as 0, 0.07, 0.18 and 0.73. Glass substrates were coated by solutions of Ti-alkoxide, Al-chloride, glacial acetic acid and isopropanol. The obtained gel films were dried at 300 °C for 10 min and subsequently heat-treated at 500 °C for 5 min in air. The oxide thin films were annealed at 600 °C for 60 min in air. TiO2, Ti3O5, TiO, Ti2O, α-Al2O3 and AlTi phases were determined in the coatings. The microstructural observations demonstrated that Al2O3 content improved surface morphology of the films and the thickness of film and surface defects increased in accordance with number of dipping. It was found that the critical load values of the films with 0, 0.07, 0.18 and 0.73 Al/Ti molar ratios were found to be 11, 15, 22 and 28 mN, respectively. For the optical property, the absorption band of synthesized powders shifted from the UV region to the visible region according to the increase of the amount of Al dopant. The oxide films were found to be active for photocatalytic decomposition of methylene blue.  相似文献   

19.
《Thin solid films》2006,494(1-2):13-17
A radiofrequency Ar/O2 magnetron discharge is used to deposit silicon suboxide (SiOx, 0  x  2) films. In this paper we demonstrate how we can apply the high-energy ion beam technique elastic recoil detection (ERD) on-line, i.e. in situ during deposition, to continuously monitor the growing layer thickness and depth resolved composition. From the ERD data the deposition rates of distinctly silicon and oxygen and the composition of the growing film are determined. Using this method several growth conditions can be investigated and compared in a fast and reliable manner on a single substrate. In this work we report the variation of the growth rate and of the composition of the growing layer as a result of the variation of the rf power and show the consequence of keeping the O2 flow constant in comparison to keeping the O2 partial pressure constant.  相似文献   

20.
Ultrathin bismuth titanate films (Bi2Ti2O7, 5–25 nm) are deposited onto SiO2/Si substrates by aqueous chemical solution deposition and their evolution during annealing is studied. The films crystallize into a preferentially oriented, pure pyrochlore phase between 500 and 700 °C, depending on the film thickness and the total thermal budget. Crystallization causes a strong increase of surface roughness compared to amorphous films. An increase of the interfacial layer thickness is observed after anneal at 600 °C, together with intermixing of bismuth with the substrate as shown by TEM-EDX. The band gap was determined to be ~3 eV from photoconductivity measurements and high dielectric constants between 30 and 130 were determined from capacitance voltage measurements, depending on the processing conditions.  相似文献   

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