Anode oxidation of HCHO in THPED-containing electroless copper plating solution

The electrochemical mechanism of anode oxidation of HCHO in electroless copper plating solution with N, N, N', N'-tetrakis(2-hydroxypropyl)ethylenediamine (THPED) was investigated by measuring cyclic voltammetry curves and anodic polarization curves. Three different oxidation peaks occur at the potentials of-0.62V (Peak 1), -0.40V (Peak 2) and -0.17V (Peak 3) in the anode oxidation process of THPED-containing solution. The reaction at Peak 1, a main oxidation reaction, is the irreversible reaction of adsorbed HCHO with hydrogen evolution. The reaction at Peak 2, a secondary oxidation reaction, is the quasi-reversible reaction of adsorbed HCHO without hydrogen evolution. The reaction at Peak 3 is the irreversible oxidation of anode copper. The current density of Peak 1 increases gradually, that of Peak 2 remains constant and that of Peak 3 decreases with the increase of HCHO concentration. The current density of Peak 3 increases with the increase of THPED concentration and the complexation of THPED promotes the dissolution of anode copper.     

Preparation of copper-coated fine molybdenum powders with electroless technique

The molybdenum powders with average particle size of 3 μm were coated with copper by electroless plating. The influence of pretreatment,solution composition and plating conditions on electroless copper plating was studied. The copper-coated molybdenum powders were examined by SEM and XRD. Results indicate that a series of optimization methods is used to add activated sites before electroless copper plating. Taking TEA and EDTA as chief and assistant complex agents respectively,2,2’-bipyridyl and PEG as double stabilizers,the Mo powders are coated with copper successfully with little Cu2O contained,at the same time,Mo-Cu composite powders with copper content of 15-85 wt% can be obtained. The optimal values of pH,temperature and HCHO concentration are 12-13,60-65 ℃ and 22-26 mL/L,respectively.     

Growth behavior of electroless copper on silicon substrate

The growth behavior containing deposit morphology, growth rate, activation energy, and growth mechanism of copper on silicon substrate, especially at the initial stage, in the electroless plating process was studied. Copper was deposited on the surface of the silicon substrate in an electloless plating bath containing formalin （CH2O 37vol%） as a reducing agent at a pH value of 12.5 and a temperature of 50-75℃. The copper deposit was characterized using a field emission scanning electron microscope and transmission electron microscope. The results showed that after the activation process, nanoscale Pd particles were distributed evenly on the surface of the silicon; in the deposition process, copper first nucleated at locations not only near the Pd particles but also between the Pd particles; the growth rate of electroless Cu ranged from 0.517 nm/s at 50℃ to 1.929 nm/s at 75℃. The activation energy of electroless Cu on Si was 52.97 kJ/mol.     

化学镀铜的物理化学

实验确定了化学镀铜的最佳工艺与配方，研究了化学镀铜的热力学及动力学机理.结果表明：从热力学数据分析看，还原剂的电极电位皆比铜离子负，用甲醛、次亚磷酸钠做还原剂还原Cu²⁺在热力学上是可行的，在碱性溶液中对化学镀铜反应有利；从阴极极化曲线的Tafel斜率分析看，Cu²⁺=Cu⁺步骤为阴极反应的速度控制环节；从镀液的旋转圆盘电极测试结果分析看，电子跃迁步骤H₂C(OH)O^-→HCOOH+1/2H₂+e^-为镀液中阳极反应速度的控制性步骤.     

Electroless copper plating process of N, N, N, N′-tetrakis (2-hydroxypropyl) ethylenediamine system with high plating rate

Electroless copper plating process of N, N, N′, N′-tetrakis (2-hydroxypropyl)ethylenediamine(THPED) chelating agent was researched comprehensively. The results indicate that plating rate decreases with the 3H2O has a bad effect on deposits quality, but 2, 2′-dipyridyl and PEG make deposits quality improve greatly. Low concentration of 2-mercaptobenzothiozole (2-MBT) increases plating rate and improves deposits quality, but decreases plating rate and worsens deposits quality when 2-MBT reaches 5 mg/L. The optimal conditions of this electroless MBT are 16.8 g/L, 16.0 mL/L, 13.3 g/L, 0.5 g/L, 5.0 mg/L and 2.0 mg/L, respectively, pH value is 12.75,bath temperature is 30 ℃. Plating rate reaches 9.54 μm/h plating for 30 min in the bath. The SEM images demonstrate that the surface of copper film is smooth and the crystal is fine.     

NdFeB磁性材料化学镀Ni-W-P合金及其电化学行为研究

采用化学镀方法在NdFeB磁性材料表面施镀Ni-W-P合金镀层,利用扫描电子显微镜（SEM）、X射线衍射仪对Ni-W-P合金镀层的组织形貌、结构进行了分析,并用电化学方法对合金镀层的耐腐蚀性能进行了测试.结果表明,Ni-W-P合金镀层是由大量不同尺寸的颗粒状或胞状突起组成,随着P含量的逐渐增多,镀层结构由晶态结构逐渐转变为非晶态结构,非晶态Ni-W-P合金镀层的抗腐蚀性能明显好于晶态镀层.     

Characterization and Electrochemical Properties of LiMn2O4 Thin Films Prepared by Solution Deposition

1 IntroductionThin-filmlithium-ion batteries have attracted greatattention of researchfor possible use inimplantable medi-cal devices , CMOS-based integrated circuits ,radio fre-quency (RF) identification tags for inventory control andanti-theft protection[1],etc. Li Mn2O4thin films , aspromising cathode materials for thin-filmlithium-ion bat-teries, have been prepared by a few methods such aspulsedlaser deposition[2 ,3],electrospraying[4-9],RF mag-netron sputtering[10], laser ablation[11]…     

Additive-aided electrochemical deposition of bismuth telluride in a basic electrolyte

A new basic electrolyte with two cationic plating additives,polydiaminourea and polyaminosulfone,was investigated for the electrochemical deposition of the bismuth telluride film on a nickel-plated copper foil.Tellurium starts to deposit at a higher potential(-0.35 V) than bismuth(-0.5 V) in this electrolyte.The tellurium-to-bismuth ratio increases while the deposition potential declines from-1 to-1.25 V, indicating a kinetically quicker bismuth deposition at higher potentials.The as-deposited film featu...     

液相沉积法制备掺银TiO2薄膜及光催化性能

为了提高TiO2薄膜光催化剂的活性,通过在氟钛酸铵、硼酸混合溶液中加入硝酸银,应用液相沉积法(LPD)制备了掺银TiO2薄膜.采用XRD、SEM、XPS、UV-vis等手段对其组成、表面形貌和结构进行了测试表征;并以甲基橙为模型物,进行降解实验评价Ag-TiO2薄膜的光催化性能.实验结果表明:硼酸/氟钛酸铵摩尔比为2～4,热处理温度为400℃,硝酸银掺杂量为0.03 mol/L时,Ag-TiO2薄膜具有良好的锐钛矿相晶型,同时具有较高的光催化性能.     

Ni-Zn-P三元合金沉积速率的研究

Ni-Zn-P合金具有优良的化学、物理性能,已在工业上广泛应用.但是对Ni-Zn-P合金沉积速率的研究,目前还未见报道.在确定化学镀Ni-Zn-P镀液组成的条件下,研究工艺参数如pH值、温度、主盐浓度、施镀时间和稳定剂对沉积速率的影响,并且用点滴实验法对合金镀层的耐蚀性进行测试.结果表明:在其它条件不变的情况下,控制pH值为9,温度98℃,NiSO4浓度35g/L,施镀2h,并加少量稳定剂,能获得800～1000mg/(dm2·h)的镀速,并且镀层有良好的耐蚀性.     

化学镀镍溶液中络合剂对镀速影响的研究

本文研究了化学镀Ni P合金镀液中络合剂对沉积速度的影响 ,结果表明不同络合剂对镀速的影响各不相同 ,本实验研究出的 3 L复合络合剂 ,它的加入使镀液稳定而镀速较高 .     

离子辅助沉积对 Nb2O5薄膜特性的影响

为了提高Nb2O5薄膜的聚集密度,改善氧化铌薄膜的光学特性和机械特性,采用霍尔源离子辅助沉积(IDA)技术在K9玻璃基板上制备了Nb2O5单层薄膜,并与常规沉积条件下制备的Nb2O5薄膜作了比较.由于IAD技术使Nb2O5膜的聚集密度提高了14%,膜层折射率从常规工艺的2.03上升到2.18,膜层的附着力和牢固度从常规工艺的1.0×107N/m2提高到129.7×107N/m2.     

Preparation and Properties of IrO2 Thin Films Grown by Pulsed Laser Deposition Technique

Highly conductive IrO2 thin films were prepared on Si （100） substrates by means of pulsed laser deposition technique from an iridium metal target in an oxygen ambient atmosphere. Emphasis was put on the effect of oxygen pressure and substrate temperature on the structure, morphology and resistivity of IrO2 films. It was found that the above properties were strongly dependent on the oxygen pressure and substrate temperature. At 20 Pa oxygen ambient pressure, pure polycrystalline IrO2 thin films were obtained at substrate temperature in the 300-500℃ range with the preferential growth orientation of IrO2 films changed with the substrate temperature. IrO2 films exhibited a uniform and densely packed granular morphology with an average feature size increasing with the substrate temperature. The room-temperature resistivity variations of IrO2 films correlated well with the corresponding film morphology changes. IrO2 films with the minimum resistivity of （42 ±6）μΩ·cm was obtained at 500℃.     

Microstructure and optical absorption properties of Au/NiO thin films

Au nanoparticles dispersed NiO composite films were prepared by a chemical solution method.The phase structure,microstructure,surface chemical state,and optical absorption properties of the films were characterized by X-ray diffraction,transmission electron microscopy,X-ray photoelectron spectroscopy,and Uv-vis spectrometer.The results indicate that Au particles with the average diameters of 35-42 nm are approximately spherical and disperse in the NiO matrix.The optical absorption peaks due to the surface p...     

光学薄膜低压反应离子镀技术初探

光学薄膜低压大电流反应离子镀技术是近年来光学镀膜技术领域中的最新进展。在国内系统地开展这方面的研究尚未见报。本文叙述了低压大电流反应离子镀技术的基本原理与成膜特点，介绍了我们建立的实验系统，特别是有关低压大电流等离子体源的各种实验参数，给出了应用该技术制备的两种常用薄膜的光学和机械特性的初步结果。     

化学镀Ni-P合金的热力学及动力学研究

将Ｂｏｃｋｒｉｓ方程应用于化学镀ＮｉＰ合金铁沉积反应当中,通过测定单位时间、单位面积的沉积量,从而求得化学Ｎｉ－Ｐ合金呱应的热力学函数△Ｇθｄｅｐ、△Ｈ＾θｄｅｐ、△Ｓ＾θｄｅｐ。此外,通过各种因素对化学镀Ｎｉ－Ｐ合金沉积速度的影响的试验,分别确定上述诸因素所对应的动力学参数,从而得出了镀液沉积速度的经验方程。     

Preparation and magnetic properties of Co-P thin films

Magnetic Co-P thin films were prepared by electroless deposition. The experiment results show that the film thickness has a significant influence on the coercivity. While the film thickness varied from 300 nm to 5 μm,the coercivity dropped sharply from 45.36 to 22.28 kA/m. As the film thickness increased further,the coercivity varied slowly. When the thickness of the film was 300 nm,the deposited film could realize the coercivity as high as 45.36 kA/m,and the remanent magnetization as high as 800 kA/m .The ...     

纳米针状金刚石膜的制备

利用高功率微波等离子体化学气相沉积方法在硅衬底上沉积了多晶金刚石薄膜,然后利用电子束蒸发方法在金刚石薄膜表面上沉积了5 nm厚的Pt薄膜.利用Pt的自组织化效应,再通过氢等离子体照射、氧等离子体刻蚀、王水处理等手段,使金刚石薄膜表面形成了纳米针.利用拉曼光谱和扫描电子显微镜(SEM)表征金刚石薄膜的结构,拉曼光谱显示在1 315 cm^-1处出现纳米金刚石特征峰,SEM显示纳米针均匀地直立在金刚石薄膜表面,每平方厘米大约含有10⁸个纳米针,纳米针的平均高度约为1 μm.     

纳米粒子对复合化学镀镍层性能的影响

在化学镀镍溶液中添加银纳米粒子,在钢铁基体上制备Ni-P／Ag纳米复合镀层。研究了添加银纳米粒子前后镀液的镀速、镀层的厚度、镀态和热处理态的硬度变化,分析了银纳米粒子对镀层性能的影响。研究结果表明,银纳米粒子使得镀层的沉积速率加快,厚度增加,硬度提高。镀层的表面形貌也由于银纳米粒子的存在而发生了改变。