多通道A/D转换控制模块的设计与实现

提出了利用MC143150 Neuron芯片和Burr-Brown公司生产的12位串行模数转换器ADS7844实现多通道A/D转换控制模块的设计与实现方法。介绍了MC143150 Neuron芯片和12位串行模数转换器ADS7844的硬件结构与工作原理,以及运用Neuron C语言开发多通道A/D转换控制模块,对数据转...     

基于激光二极管的智能循迹小车的硬件设计

介绍了一种基于红外激光二极管的智能循迹模型车硬件系统的设计方法。该系统以MC9S12XS128为控制核心,采用红外激光二极管及红外接收传感器采集路径信息,同时应用内部集成H桥电路的MC33886芯片进行电机驱动,并运用LM331芯片来设计测速电路。此系统可对采集到的路径信息及反馈的车速数据进行分析和处理,能及时控制舵机转向和调整电机转速,从而实现小车的自动循迹功能。     

LonWorks节点中主从处理器之间I2C接口的设计

为提高LonWorks总线的控制能力,设计了以单片机AT89S51为主的处理器、神经元芯片MC143150为从处理器的LonWorks节点,主处理器和从处理器之间的接口采用I2C通信总线,节省了神经元芯片的I/O硬件资源,同时也减小了节点的体积。LonWorks节点利用Neuron芯片中声明的I2C对象和单片机AT89S51模拟的I2C总线完成主、从处理器间的数据交换。测试证明,主从处理器采用I2C总线的节点,具有良好的通信性能。     

用MC3371/MC3372设计的滤波器

文章介绍了Motorola公司生产的FM通信芯片MC3371/MC3372的特性、结构、原理及典型应用,给出了利用MC3371/MC3372芯片设计的一种高灵敏度电力线载波通信滤波器的实际应用电路。     

基于Host-Base结构的电力线智能节点设计

传统的LonWorks节点以Neuron芯片为核心,但其处理能力难以胜任复杂的计算任务。针对此问题,提出一种基于单片机AT89S51的Host-Base节点的解决方案。依据电力线通信的优势,研究了由AT89S51,神经元芯片MC143150及电力线收发器PLT-22所组成的智能节点的软硬件设计。实验表明,在现有的低压电网上进行通信,数据传输可靠,系统运行稳定。     

电子测速芯片MC33039及其应用

MC33039是美国Motorola公司研制的闭环速度测试与控制芯片，它可使直流无刷电机平稳地启动、加速或减速。文章介绍了MC33039的结构特点、引脚功能和工作原理，给出了其在无刷直流电机控制中的应用控制电路。由于MC33039无需电磁、光电转速计就能实现高精度的速度控制，故可广泛应用于电动车、电梯等需要直流无刷电机的场合。     

基于MC9S12XS128单片机的智能循迹小车的硬件设计

给出了一种基于MC9S12XS128单片机的智能模型车硬件系统的设计方法,该系统的核心控制器采用MC9S12XS128芯片,并采用数字摄像＆OV6620采集路面信息,电机驱动模块则采用MC33886H桥芯片。整个系统根据对所采集图像信息的分析和处理来控制舵机转向并调整后轮驱动电机的速度,从而实现小车自动循迹的功能。     

基于MC9S12的智能车系统设计

基于MC9S12XS128芯片构建了太阳能智能车系统，可以实现循迹、避障、速度检测与控制、太阳能充电等功能。叙述了各个模块的硬件设计，并对智能车避障的常用方法进行了比较，通过简化模糊控制的应用方案，提高了避障的实时性。     

一种低功率SSB收发信机的设计

低功率业余无线电收发信机是业余无线电爱好者们急需的低功率通信设备.本文介绍了一种低功率SSB收发信机的设计方法及其工作原理.该收发信机提供15 m和20 m两个波段,利用芯片MC1596实现SSB信号的产生及检波,利用芯片NE602完成混频,固定中频为9 MHz.该机体积小、重量轻、成本低、性能好,在低功率业务无线电通信领域中,具有较高的实用价值和广阔的应用前景.     

基于MC33035的煤矿用无刷直流电机控制器设计

本文在分析煤矿用无刷直流电机原理和专用控制芯片（MC33035）功能的基础上,设计了以MC33035为核心的煤矿用无刷直流电机控制器,对控制系统整体结构、电子测速单元和脉宽调制单元进行详细设计。煤矿用无刷直流电机控制器具有结构简单、性能稳定即安全特性好等特点,利用CAN通讯技术与上位机之间进行通讯,为实现煤矿用无刷直流电机智能控制技术奠定基础。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.