Microwave Dielectric Properties and Low-Temperature Sintering of Ba0.60Sr0.40TiO3 Ceramics

In the present work, the sintering behaviors and dielectric properties of Ba_0.60Sr_0.40TiO₃ (BST) ceramics with the addition of BaCu(B₂O₅) were investigated in detail. The results indicated that the addition reduced the sintering temperature of BST by about 500°C. It was suggested that a liquid phase BaCu(B₂O₅) assisted the densification of BST ceramics at lower temperatures. For a low-level BaCu(B₂O₅) addition (2.0 mol%), the BST sample sintered at 950°C for 5 h displayed good dielectric properties, with a moderate dielectric constant (ɛ=2553) and a low dielectric loss (tan δ=0.00305) at room temperature and at 10 kHz. The sample showed 45.9% tunability at 10 kHz under a dc electric field of 30 kV/cm. At the frequency of 0.984 GHz, BST-added 2.0 mol% BaCu(B₂O₅) possessed a dielectric constant of 2204 and a Q value of 146.7.     

Sintering and Electrical Properties of Lead-Free Na0.5K0.5NbO3 Piezoelectric Ceramics

Lead-free Na_0.5K_0.5NbO₃ (NKN) piezoelectric ceramics were fairly well densified at a relatively low temperature under atmospheric conditions. A relative density of 96%–99% can be achieved by either using high-energy attrition milling or adding 1 mol% oxide additives. It is suggested that ultra-fine starting powders by active milling or oxygen vacancies and even liquid phases from B-site oxide additives mainly lead to improved sintering. Not only were dielectric properties influenced by oxide additives, such as the Curie temperature ( T _c) and dielectric loss ( D ), but also the ferroelectricity was modified. A relatively large remanent polarization was produced, ranging from 16 μC/cm² for pure NKN to 23 μC/cm² for ZnO-added NKN samples. The following dielectric and piezoelectric properties were obtained: relative permittivity ɛ ^T ₃₃/ɛ ₀ =570–650, planar mode electromechanical coupling factor, k _p=32%–44%, and piezoelectric strain constant, d ₃₃=92–117 pC/N.     

K/Na Ratio Dependence of the Electrical Properties of [(KxNa1−x)0.95Li0.05](Nb0.95Ta0.05)O3 Lead-Free Ceramics

[(K _x Na_{1− x} )_0.95Li_0.05](Nb_0.95Ta_0.05)O₃ (K _x NLNT) ( x= 0.40–0.60) lead-free piezoelectric ceramics were prepared by conventional solid-state sintering. The effects of K/Na ratio on the dielectric, piezoelectric, and ferroelectric properties of the K _x NLNT ceramics were studied. The experimental results show that the electrical properties strongly depend on the K/Na ratio in the K _x NLNT ceramics. The K _x NLNT ( x =0.42) ceramics exhibit enhanced properties ( d ₃₃∼242 pC/N, k _p∼45.7%, k _t∼47%, T _c∼432°C, T _o−t =48°C, ɛ_r∼1040, tanδ∼2.0%, P _r∼26.4 μC/cm², E _c∼10.3 kV/cm). Enhanced electrical properties of the K _x NLNT ( x =0.42) ceramics could be attributed to the polymorphic phase transition near room temperature. These results show that the K _x NLNT ( x =0.42) ceramic is a promising lead-free piezoelectric material.     

Microwave Dielectric Properties of Hexagonal 12R-Ba3LaNb3O12 Ceramics

The dielectric properties of dense ceramics of the n =0 member of a newly identified homologous series Ba_{3+ n} LaNb₃Ti _n O_{12+3 n} , where n =0, 1, and 2, are reported. Single-phase powders can be obtained from the mixed-oxide route at 1350°C and dense ceramics (>97% of the theoretical X-ray density) with uniform microstructures (3–5 μm) can be obtained by sintering in air at 1500°C. The ceramics are excellent dc insulators with a band gap >2.6 eV that resonate at microwave frequencies with a relative permittivity, ɛ_r∼44, a quality factor, Q × f _r, of ∼9000 at f _r∼5.5 GHz and a temperature coefficient of resonant frequency, TC_f,∼−100 ppm/K.     

Dielectric Properties of the "Twinned" 8H-Hexagonal Perovskite Ba8Nb4Ti3O24

The dielectric properties of dense ceramics of the "twinned" 8H-hexagonal perovskite Ba₈Nb₄Ti₃O₂₄ are reported. Single-phase powders were obtained from the mixed-oxide route at 1325°C and ceramics (>92% of the theoretical X-ray density) by sintering in air or flowing O₂ at 1400°–1450°C. The ceramics are dc insulators with a band gap >3.4 eV that resonate at microwave frequencies with relative permittivity, ɛ_r∼44–48, quality factor, Q × f _r∼21 000–23 500 GHz (at f _r∼5.5 GHz) and temperature coefficient of resonant frequency, TC _f,∼+115 ppm/K.     

Reduced Dielectric Loss of Modified ZnNb2O6 Ceramics by Substituting Nb5+ with Ta5+

The effects of substituting Nb⁵⁺ with Ta⁵⁺ on the microwave dielectric properties of the ZnNb₂O₆ ceramics were investigated in this study. The forming of Zn(Nb_{1− x} Ta _x )₂O₆ ( x =0–0.09) solid solution was confirmed by the measured lattice parameters and the EDX analysis. By increasing x , not only could the Q × f of the Zn(Nb_{1− x} Ta _x )₂O₆ ( x =0–0.09) solid solution be tremendously boosted from 83 600 GHz at x =0 to a maximum 152 000 GHz at x =0.05, the highest ɛ_r∼24.6 could also be achieved simultaneously. It was mainly due to the uniform grain morphology and the highest relative density of the specimen. A fine combination of microwave dielectric properties (ɛ_r∼24.6, Q × f ∼152 000 GHz at 8.83 GHz, τ_f∼–71.1 ppm/°C) was achieved for Zn(Nb_0.95Ta_0.05)₂O₆ solid solution sintered at 1175°C for 2 h.     

Microstructure and Electrical Properties of [(K0.50Na0.50)0.95−xLi0.05Agx](Nb0.95Ta0.05)O3 Lead-Free Ceramics

[(K_0.50Na_0.50)_{0.95− x} Li_0.05Ag _x ](Nb_0.95Ta_0.05)O₃ (KNLNANT- x ) lead-free piezoelectric ceramics were prepared by normal sintering. Effects of the Ag content on the microstructure and electrical properties of KNLNANT- x ceramics were systematically investigated. It is found that the ceramics with x =0.03 exhibit relatively good electrical properties along with high Curie temperature: ( d ₃₃∼252 pC/N, T _c∼438°C, k _p∼45.4%, P _r∼30.1 μC/cm², E _c∼13.8 kV/cm, ɛ_r∼1030, and tan δ∼2.6%). The related mechanism for enhanced electrical properties of the ceramics was also discussed. These results show that KNLNANT-0.03 ceramic is a promising candidate material for high temperature lead-free piezoelectric ceramics.     

Piezoelectric Properties of (1−x)(Na0.5K0.5)NbO3–xAgSbO3 Lead-Free Ceramics

(1− x )(Na_0.5K_0.5)NbO₃– x AgSbO₃ lead-free piezoelectric ceramics were prepared by normal sintering. The effects of the AgSbO₃ on the phase structure and piezoelectric properties of the ceramics were systematically studied. These results show that the AgSbO₃-modified (K_0.50Na_0.50)NbO₃ lead-free piezoelectric ceramics form stable solution with orthorhombic structure, and the Curie temperature and the polymorphic phase transition of the ceramics decreased with increasing AgSbO₃. The result shows that the piezoelectric properties of the ceramics strongly depend on the AgSbO₃. The ceramics with x =0.05 possess optimum properties ( d ₃₃=192 pC/N, k _p=43%, T _c=348°C, T _o−t =145°C, ɛ_r∼632, and tan δ∼3.5%). These results indicate that the ceramic is a promising candidate material for lead-free piezoelectric ceramics.     

Low-Temperature Sintering of K0.5Na0.5NbO3 Ceramics

The objective of this work was to lower the sintering temperature of K_0.5Na_0.5NbO₃ (KNN) without reducing its piezoelectric properties. The KNN was sintered using 0.5, 1, 2, and 4 mass% of (K, Na)-germanate. The influence of the novel sintering aid, based on alkaline germanate with a melting point near 700°C, on the sintering, density, and piezoelectric properties of KNN is presented. The alkaline-germanate-modified KNN ceramics reach up to 96% of theoretical density at sintering temperatures as low as 1000°C, which is approximately 100°C less than the sintering temperature of pure KNN. The relative dielectric permittivity (ɛ/ɛ₀) and losses (tanδ), measured at 10 kHz, the piezo d ₃₃ coefficient, the electromechanical coupling and mechanical quality factors ( k _p, k _t, Q _m) of KNN modified with 1 mass% of alkaline germanate are 397, 0.02, 120 pC/N, 0.40, 0.44, and 77, respectively. These values are comparable to the best values obtained for KNN ceramics sintered above 1100°C.     

Sr3LaNb3O12: A New Low Loss and Temperature Stable A4B3O12-Type Microwave Dielectric Ceramic

The microwave dielectric properties of dense ceramics of a new A₄B₃O₁₂ type cation-deficient hexagonal perovskite Sr₃LaNb₃O₁₂ are reported. Single-phase powders can be obtained from the mixed-oxide route at 1320°C and dense ceramics (>96% of the theoretical X-ray density) with uniform microstructures (5–12 um) can be obtained by sintering in air at 1430°C. The ceramic exhibits a moderate dielectric constant ɛ_r∼36, a high quality factor Q × f ∼45 327 GHz, and a low temperature coefficient of resonant frequency τ _f of −9 ppm/°C.     

Effect of Cation Substitution and Non-Stoichiometry on the Microwave Dielectric Properties of Sr(B'0.5Ta0.5)O3 [B'=Lanthanides] Perovskites

The Sr(B'_0.5Ta_0.5)O₃ ceramics where B'=La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Er, and Yb have been prepared by the conventional solid-state ceramic route and their microwave dielectric properties have been investigated. The structure and microstructure of the ceramics have been characterized by X-ray diffraction and scanning electron microscope techniques. The relative permittiviy (ɛ_r) varies linearly with B'-site ionic radii, except for La, and the temperature coefficient of resonant frequency (τ_f) varies linearly with the tolerance factor. The Sr(B'_0.5Ta_0.5)O₃ ceramics have ɛ_r in the range 25.9–32, Q _u× f =4500–54 300 GHz, and τ_f=−79 to −42 ppm/°C. A slight deviation from stoichiometry affects the dielectric properties of these double perovskites. Partial substitution of Ba for Sr could tune the dielectric properties. Addition of rutile (TiO₂) lowered the sintering temperature and improved the dielectric properties of Sr(B'_0.5Ta_0.5)O₃ ceramics.     

Effects of Silver Doping on the Sol–Gel-Derived Ba4(Nd0.7Sm0.3)9.33Ti18O54 Microwave Dielectric Ceramics

Tungstenbronze-type Ba₄(Nd_0.7Sm_0.3)_9.33Ti₁₈O₅₄ (BNST) microwave dielectric ceramics doped with 0–10 wt% silver (Ag) particles were successfully fabricated by a citrate sol–gel method. The influence of Ag doping on the sinterability, microstructure, bulk conductivity, and dielectric properties of BNST was investigated. The desired tungstenbronze-type phase was obtained at 900°–950°C. The sintering temperature of BNST decreased to 1100°C with the aid of a small amount of Ag addition (1 wt%). No chemical reaction between the tungsenbronze phase and Ag was detected. The particle size of the powders decreased with increasing Ag content up to 1 wt% and it then increased with a further increase in the Ag content. The dense fine-grained ceramics with submicrometer grains (∼300 nm) were obtained with 1 wt% Ag addition. The submicrometer-grained ceramics had excellent dielectric properties of ɛ_r∼81 and Q × f ∼11 000 GHz. Both the dielectric constant and dielectric loss significantly increased with large additions (>3 wt%) of Ag due to the percolation effect.     

Low-Loss Microwave Dielectrics Using Mg2(Ti1−xSnx)O4 (x=0.01–0.09) Solid Solution

Low-loss ceramics having the chemical formula Mg₂(Ti_{1− x} Sn _x )O₄ for x ranging from 0.01 to 0.09 have been prepared by the conventional mixed oxide route and their microwave dielectric properties have been investigated. X-ray powder diffraction patterns indicate the corundum-structured solid solutions for the prepared compounds. In addition, lattice parameters, which linearly increase from 8.4414 to 8.4441 Å with the rise of x from 0.01 to 0.09, also confirm the forming of solid solutions. By increasing x from 0.01 to 0.05, the Q × f of the specimen can be tremendously boosted from 173 000 GHz to a maximum 318 000 GHz. A fine combination of microwave dielectric properties (ɛ_r∼15.57, Q × f ∼318 000 GHz at 10.8 GHz, τ_f∼−45.1 ppm/°C) was achieved for Mg₂(Ti_0.95Sn_0.05)O₄ ceramics sintered at 1390°C for 4 h. Ilmenite-structured Mg(Ti_0.95Sn_0.05)O₃ (ɛ_r∼16.67, Q × f ∼275 000 GHz at 10.3 GHz, τ_f∼−53.2 ppm/°C) was detected as a second phase. The presence of the second phase, however, would cause no significant variation in the dielectric properties of the specimen, because the second phase properties are very similar to the primary phase. These unique properties, in particular, low ɛ_r and high Q × f , can be utilized as a very promising dielectric material for ultra-high-frequency applications.     

Dielectric Properties and Microstructure of Nb-Co Codoped BaTiO3–(Bi0.5Na0.5)TiO3 Ceramics

X-ray diffractometry, scanning electron microscopy, transmission electron microscopy, and an impedance analyzer were used to examine the Nb–Co codoping effects on the densification, crystalline phase, microstructure development, and dielectric–temperature characteristics of BaTiO₃–(Bi_0.5Na_0.5)TiO₃ ceramics. The results indicate that the Curie temperature shifted to a higher temperature (above 140°C) by adding BNT. The dielectric constant–temperature (ɛ– T ) curve broadened at the Curie temperature due to the small grain size (0.3–0.4 μm). A core-shell structure was developed, which is helpful to flatten the ɛ– T curve of BaTiO₃ ceramics at high temperatures.     

Effect of CuO on the Sintering Temperature and Piezoelectric Properties of (Na0.5K0.5)NbO3 Lead-Free Piezoelectric Ceramics

When a small amount of CuO was added to (Na_0.5K_0.5)NbO₃ (NKN) ceramics sintered at 960°C for 2 h, a dense microstructure with increased grains was developed, probably due to liquid-phase sintering. The Curie temperature slightly increased when CuO exceeded 1.5 mol%. The Cu²⁺ ion was considered to have replaced the Nb⁵⁺ ion and acted as a hardener, which increased the E _c and Q _m values of the NKN ceramics. High piezoelectric properties of k _p=0.37, Q _m=844, and ɛ₃ ^T /ɛ₀=229 were obtained from the specimen containing 1.5 mol% of CuO sintered at 960°C for 2 h.     

A New Low-Loss Microwave Dielectric Ceramic Sr4LaTiNb3O15

A high dielectric constant and low-loss ceramic with composition Sr₄LaTiNb₃O₁₅ has been prepared by the conventional solid-state ceramic route. This compound adopts an A₅B₄O₁₅ cation-deficient hexagonal perovskite structure and crystallizes in the trigonal system with unit cell parameters a =5.6307(2), c =11.3692(3) Å, V =312.16(2) ų, and Z =1. The dielectric properties of dense ceramics sintered in air at 1460°C have been characterized at microwave frequencies. The results show that the material affords a relatively high dielectric constant ɛ_r∼43, a high quality factor Q × f ∼44 718 GHz, and a low temperature coefficient of resonant frequency TC_f∼13 ppm/°C.     

Dielectric Properties of (1−x)CaTiO3–xCa(Zn1/3Nb2/3)O3 Ceramic System at Microwave Frequency

The microwave dielectric properties of the (1− x )CaTiO₃– x Ca(Zn_1/3Nb_2/3)O₃ ceramic system have been investigated. The ceramic samples sintered at 1300°–1450°C for 4 h in air exhibit orthorhombic pervoskite and form a complete solid solution for different x value. When the x value increased from 0.2 to 0.8, the permittivity ɛ_r decreased from 115 to 42, the unloaded quality factor Q × f increased from 5030 to 13 030 GHz, and the temperature coefficient τ_f decreased from 336 to −28 ppm/°C. When x =0.7, the best combination of dielectric properties, a near zero temperature coefficient of resonant frequency of τ_f∼−6 ppm/°C, Q × f ∼10 860 GHz and ɛ_r∼51 is obtained.     

High Q Microwave Dielectric Ceramics in (Ni1−x Znx)Nb2O6 System

(Ni_{1− x} Zn _x )Nb₂O₆, 0≤ x ≤1.0, ceramics with >97% density were prepared by a conventional solid-state reaction, followed by sintering at 1200°–1300°C (depending on the value of x ). The XRD patterns of the sintered samples (0≤ x ≤1.0) revealed single-phase formation with a columbite ( Pbcn ) structure. The unit cell volume slightly increased with increasing Zn content ( x ). All the compositions showed high electrical resistivity (ρ_dc=1.6±0.3 × 10¹¹Ω·cm). The microwave (4–5 GHz) dielectric properties of (Ni_{1− x} Zn _x )Nb₂O₆ ceramics exhibited a significant dependence on the Zn content and to some extent on the morphology of the grains. As x was increased from 0 to 1, the average grain size monotonically increased from 7.6 to 21.2 μm and the microwave dielectric constant (ɛ'_r) increased from 23.6 to 26.1, while the quality factors ( Q _u× f ) increased from 18 900 to 103 730 GHz and the temperature coefficient of resonant frequency (τ_f) increased from −62 to −73 ppm/°C. In the present work, we report the highest observed values of Q _u× f =103 730 GHz, and ɛ'_r=26.1 for the ZnNb₂O₆-sintered ceramics.     

Microstructure and Piezoelectric Properties of 0.95(Na0.5K0.5)NbO3–0.05SrTiO3 Ceramics

The 0.95(Na_0.5K_0.5)NbO₃–0.05SrTiO₃ (0.95NKN–0.05ST) ceramics formed in this study had a porous microstructure with small grains and low piezoelectric properties due to their low density. However, when a small amount of Na₂O was intentionally subtracted from the 0.95NKN–0.05ST ceramics, a liquid phase was formed, which led to increased density and grain size. Piezoelectric properties were also improved for the Na₂O-subtracted 0.95NKN–0.05ST ceramics. The increased density and grain size were responsible for the enhancement of the piezoelectric properties. In particular, the 0.95(Na_0.49K_0.5)NbO_2.995–0.05ST ceramics showed high piezoelectric properties of d ₃₃=220, k _p=0.4, Q _m=72, and ɛ₃^T/ɛ_o=1447, thereby demonstrating their promising potential as a candidate material for application to lead-free piezoelectric ceramics.     

Elastic, Piezoelectric, and Dielectric Properties of 0.71Pb(Mg1/3Nb2/3)O3–0.29PbTiO3 Crystals Obtained by Solid-State Crystal Growth

Single crystals with the composition of 0.71Pb(Mg_1/3Nb_2/3)O₃–0.29PbTiO₃ (PMNT29) were grown using the solid-state crystal growth (SSCG) method. Compared with the conventional Bridgman grown crystals, the SSCG PMNT29 crystals were found to possess comparable piezoelectric, dielectric, and electromechanical properties ( d ₃₃∼1500 pC/N, ɛ^T ₃₃/ ɛ ₀∼5400 and k ₃₃∼90%), with the same Curie temperature ( T _C) and ferroelectric phase transformation temperature ( T _{R – T} ). The full set of elastic, piezoelectric, and dielectric material constants were determined by the resonance method for the SSCG grown PMNT29 crystals according to IEEE standards and compared with Bridgman grown crystals. The dielectric temperature behavior and the strain field characteristics were investigated, demonstrating excellent performance over the temperature range from room temperature to 95°C. Strain behavior at high electric fields was found to be different from Bridgman growth crystals and believed to be attributed to different domain structures.