Effect of B2O3-Bi2O3-SiO2-ZnO glass on the sintering and microwave dielectric properties of 0.83ZnAl2O4-0.17TiO2

The 0.83ZnAl₂O₄-0.17TiO₂ (ZAT) ceramics were synthesized by solid state ceramic route. The effect of 27B₂O₃-35Bi₂O₃-6SiO₂-32ZnO (BBSZ) glass on the microwave dielectric properties of ZAT was investigated. The crystal structure and the microstructure of the ceramic-glass composites were studied by X-ray diffraction and scanning electron microscopic techniques. The low frequency dielectric loss was measured at 1 MHz. The dielectric properties of the sintered samples were measured in the microwave frequency range by the resonance method. Addition of 0.2 wt% of BBSZ improved the dielectric properties with quality factor (Q_u × f) > 120,000 GHz, temperature coefficient of resonant frequency (τ_f) = −7.3 ppm/°C and dielectric constant (?_r) = 11.7. Addition of 10 wt% of BBSZ lowered the sintering temperature to about 950 °C with Q_u × f > 10,000 GHz, ?_r = 10 and τ_f = −23 ppm/°C. The reactivity of 10 wt% BBSZ added ZAT with silver was also studied. The results show that ZAT doped with suitable amount of BBSZ glass is a possible material for low-temperature co-fired ceramic (LTCC) application.     

Growth and electrical performance of Pb(Mg1/3Nb2/3)O3-PbTiO3-Pb(Fe1/2Nb1/2)O3 single crystals

For the first time, we have grown ferroelectric single crystals Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃-Pb(Fe_1/2Nb_1/2)O₃ (PMN-PT-PFN) from the melt by the simple slow cooling process. The chemical composition of the single crystals PMN-PT-PFN (0.59/0.31/0.10) is near the morphotropic phase boundary (MPB). X-ray diffraction (XRD) was used to study phase structure of the as-grown crystals, energy dispersive X-ray spectrometer (EDS) and electron probe micro-analyzer (EPMA) were employed to confirm the chemical composition and element distribution of the as-grown crystals, respectively. The ferroelectric, dielectric and piezoelectric properties of the as-grown PMN-PT-PFN (0.59/0.31/0.10) single crystal oriented along the (0 0 1) axis were measured, which showed that the remnant polarization (P_r), coercive electric fields (E_c), the Curie temperature (T_c) and the piezoelectric coefficient (d₃₃) were 50.2 μC/cm², 13.9 kV/cm, 158 °C and about 1800 pC/N, respectively. All the results indicated that the PMN-PT-PFN (0.59/0.31/0.10) single crystals are promising for applying to field of high frequency.     

The influence of carbon nanotubes on the PVC glass transition temperature

The suspension poly(vinyl chloride) with the K number 70 (PVC S-70) compound was applied as a matrix of the nanocomposite, and the multi-wall carbon nanotubes (MWCNT) in the concentration range between 0.01 wt.% and 0.05 wt.% as a nanofiller. The T_g determination was realized by means of DMTA, dielectric losses measurements and DSC measurements. In all cases the PVC matrix revealed lower T_g comparing with corresponding composites with CNTs, and a clear relationship between the frequency, CNT contain and the T_g was found. With an increase of the charging frequency an increase of T_g of about 3 °C by DMTA measurements, realized by frequencies f = 1 Hz and f = 10 Hz, and of 9 °C by f = 1000 Hz, was noted. Independent on the frequency a maximum of the T_g increase was observed by the CNT concentration of about 0.01–0.02 wt.%.     

Dielectric anisotropy and electrical properties of the copper phthalocyanine (CuPc): 4–4′-n-Heptylcyanobiphenyl (7CB) composite liquid crystals

Dielectric anisotropy and electrical properties of the copper phthalocyanine (CuPc): 4–4′-n-heptylcyanobiphenyl (7CB) composite liquid crystals have been investigated. Liquid crystals exhibit dielectrically-controlled positive dielectric anisotropy (p-type Δɛ) and the dielectric anisotropy changes from positive to negative dielectric anisotropy (n-type Δɛ) behavior with frequency of applied electrical field. The critical frequency f_c values for the 7CB and CuPc doped 7CB liquid crystals were found to be 602 kHz and 518 kHz, respectively. This indicates that CuPc doping causes a decrease in the critical frequency. The splay elastic coefficients of the 7CB and CuPc doped 7CB liquid crystals were determined and CuPc doping increases the splay elastic coefficient of 7CB liquid crystal. The 7CB liquid crystal exhibits a voltage-controlled differential negative resistance (VCNR) behavior and CuPc doping affects significantly VCNR behavior of 7CB.     

Synthesis of nanocrystalline magnesium titanate by an auto-igniting combustion technique and its structural, spectroscopic and dielectric properties

Nanocrystalline magnesium titanate was synthesized through an auto-ignited combustion method. The phase purity of the powder was examined using X-ray diffraction, thermo gravimetric analysis, differential thermal analysis, Fourier transform infrared spectroscopy and Raman spectroscopy. The transmission electron microscopy study showed that the particle size of the as-prepared powder was in between 20 and 40 nm. The nanopowder could be sintered to 98% of the theoretical density at 1200 °C for 3 h. The microstructure of the sintered surface was examined using scanning electron microscopy. The dielectric constant (?_r) of 16.7 and loss factor (tan δ) of the order of 10⁻⁴ were obtained at 5 MHz when measured using LCR meter. The quality factor (Q_u × f) 73,700 and temperature coefficient of resonant frequency (τ_f) −44.3 ppm/°C, at 6.5 GHz are the best reported values for sintered pellets obtained from phase pure nanocrystalline MgTiO₃ powder.     

Structural, spectroscopic and dielectric investigations on Ba8Zn(Nb6−xSbx)O24 microwave ceramics

Ba₈Zn(Nb_6−xSb_x)O₂₄ (x = 0, 0.3, 0.6, 0.9, 1.2, 1.5, 1.8 and 2.4) ceramics were prepared through the conventional solid-state route. The materials were calcined at 1250 °C and sintered in the range 1400-1425 °C. The structure of the system was analyzed by X-ray diffraction, Fourier transform infrared and Raman spectroscopic methods. The theoretical and experimental densities were calculated. The microstructure of the sintered pellets was analyzed using scanning electron microscopy. The low frequency dielectric properties were studied in the frequency range 50 Hz-2 MHz. The dielectric constant (?_r), temperature coefficient of resonant frequency (τ_f) and the unloaded quality factor (Q_u) are measured in the microwave frequency region using cavity resonator method. The τ_f values of the samples reduced considerably with the increase in Sb concentration. The materials have intense emission lines in the visible region. The compositions have good microwave dielectric properties and photoluminescence and hence are suitable for dielectric resonator and ceramic laser applications.     

Synthesis and microwave dielectric properties of CaO-MgO-SiO2 submicron powders doped with Li2O-Bi2O3 by sol-gel method

Using Ca(NO₃)₂·4H₂O, Mg(NO₃)₂·6H₂O, Si(OC₂H₅)₄, LiNO₃ and Bi(NO₃)₃·5H₂O as raw materials, CaO-MgO-SiO₂ submicron powders were prepared at low temperature by sol-gel method. The crystallization temperature was decreased enormously by the introduction of Li-Bi liquid phase sintering aids into Ca-Mg-Si sol, and the powders with average particle sizes of 80-100 nm and 200-400 nm were obtained at the calcining temperature of 750 °C and 800 °C, respectively. The sintering characteristic and dielectric properties of powders calcined at 750 °C with different content of powders calcined at 800 °C were studied. When the content of powders calcined at 800 °C was 10 wt%, the dielectric ceramic sintered at 890 °C had compact structure, and possessed excellent microwave dielectric properties: ?_r = 7.16, Q × f = 25630 GHz, τ_f = −69.26 ppm/°C.     

Microwave dielectric properties and microstructures of CuO- and ZnO-doped LaAlO3 ceramics

The microwave dielectric properties and the microstructures of 0.25 wt.% CuO-doped LaAlO₃ ceramics with ZnO additions have been investigated. The sintered LaAlO₃ ceramics are characterized by X-ray diffraction spectra and scanning electron microscopy (SEM). Tremendous reduction in sintering temperature can be achieved with the addition of sintering aids CuO and ZnO. The ceramic samples show that dielectric constants (ε_r) of 22−24 and Q×f values of 33,000−57,000 (at 9.7 GHz) can be obtained at low sintering temperatures 1340−1460°C. The temperature coefficient of resonant frequency varies from −24 to −48 ppm/°C. At the level of 0.25 wt.% CuO and 1 wt.% ZnO additions, LaAlO₃ ceramics possesses a dielectric constant (ε_r) of 23.4, a Q×f value of 57,000 (at 9.7 GHz) and a τ_f value of −38 ppm/°C at 1400°C for 2 h.     

Synthesis of (1 − x)Ca2/5Sm2/5TiO3-xLi1/2Nd1/2TiO3 ceramic powder via ethylenediaminetetraacetic acid precursor

(1 − x)Ca_2/5Sm_2/5TiO₃-xLi_1/2Nd_1/2TiO₃ (CSLNT) ceramic powder was prepared by a liquid mixing method using ethylenediaminetetraacetic acid (EDTA) as the chelating agent. TG, DTA, XRD and TEM characterized the precursors and derived oxide powders. When x = 0.3, perovskite CSLNT was synthesized at 1000 °C for 3 h in air. The CSLNT (x = 0.3) ceramics sintered at 1200 °C for 3 h show excellent microwave dielectric properties of ?_r = 99, Q_f = 6200 GHz and τ_f = 9 × 10⁻⁶ °C⁻¹.     

Dielectric properties of a new ceramic system (1 − x)Mg4Nb2O9-xCaTiO3 at microwave frequency

The microstructures and the microwave dielectric properties of the (1 − x)Mg₄Nb₂O₉-xCaTiO₃ ceramic system were investigated. In order to achieve a temperature-stable material, CaTiO₃ (τ_f ∼ 800 ppm/°C) was chosen as a τ_f compensator and added to Mg₄Nb₂O₉ (τ_f ∼ −70 ppm/°C) to form a two phase system. It was confirmed by the XRD and EDX analysis. By appropriately adjusting the x-value in the (1 − x)Mg₄Nb₂O₉-xCaTiO₃ ceramic system, near-zero τ_f value can be achieved. A new microwave dielectric material, 0.5Mg₄Nb₂O₉-0.5CaTiO₃ applicable in microwave devices is suggested and possesses the dielectric properties of a dielectric constant ?_r ∼ 24.8, a Q × f value ∼82,000 GHz (measured at 9.1 GHz) and a τ_f value ∼−0.3 ppm/°C.     

Characterization and dielectric behavior of CuO-doped ZnTa2O6 ceramics at microwave frequency

The effects of CuO addition on the microstructures and microwave dielectric properties of ZnTa₂O₆ ceramics were investigated. CuO was selected as a liquid-phase sintering aid to lower the sintering temperature of ZnTa₂O₆ ceramics. With CuO addition, the sintering temperature of ZnTa₂O₆ can be effectively reduced from 1350 to 1230 °C. The crystalline phase exhibited no phase difference and no second phase was detected at low addition levels (0.25-1 wt.%). The quality factors Q × f were strongly dependent upon the CuO concentration. A Q × f value of 65,500 GHz was obtained for specimen with 0.25 wt.% CuO addition at 1230 °C. For all levels of CuO concentration, the relative dielectric constants were not significantly different and ranged from 34.2 to 35.7. Tunable temperature coefficient of resonant frequency (τ_f) can be adjusted to zero by appropriately turning the CuO content.     

Improved high-Q microwave dielectric resonator using CuO-doped MgNb2O6 ceramics

The microwave dielectric properties and the microstructures of MgNb₂O₆ ceramics with CuO additions (1-4 wt.%) prepared with conventional solid-state route have been investigated. The sintered samples exhibit excellent microwave dielectric properties, which depend upon the liquid phase and the sintering temperature. It is found that MgNb₂O₆ ceramics can be sintered at 1140 °C due to the liquid phase effect of CuO addition. At 1170 °C, MgNb₂O₆ ceramics with 2 wt.% CuO addition possesses a dielectric constant (ε_r) of 19.9, a Q×f value of 110,000 (at 10 GHz) and a temperature coefficient of resonant frequency (τ_f) of −44 ppm/°C. The CuO-doped MgNb₂O₆ ceramics can find applications in microwave devices requiring low sintering temperature.     

Low-temperature sintering of temperature-stable LaNbO4 microwave dielectric ceramics

We demonstrate the correlation between sintering behavior and microstructural observations in low-temperature sintered, LaNbO₄ microwave ceramics. Small CuO additions to LaNbO₄ significantly lowered the sintering temperature from 1250 to 950 °C. To elucidate the sintering mechanism, the internal microstructure of the sample manipulated by a focused ion beam (FIB) was investigated using transmission electron microscopy (TEM) and energy-dispersive spectroscopy (EDS). LaNbO₄ with 3 wt% CuO sintered at 950 °C for 2 h possessed the following excellent microwave dielectric properties: a quality factor (Qxf) of 49,000 GHz, relative dielectric constant (?_r) of 19.5, and temperature coefficient of resonant frequency (τ_f) of 1 ppm/°C. The ferroelastic phase transformation was also investigated using in situ X-ray diffraction (XRD) to explain the variation of τ_f in low-temperature sintered LaNbO₄ as a function of CuO content.     

Microwave dielectric properties and microstructures of the 11Li2O-3Nb2O5-12TiO2 ceramics with B2O3 addition

The effects of B₂O₃ addition, as a sintering agent, on the sintering behavior, microstructure and microwave dielectric properties of the 11Li₂O-3Nb₂O₅-12TiO₂ (LNT) ceramics have been investigated. With the low-level doping of B₂O₃ (≤2 wt.%), the sintering temperature of the LNT ceramic could be effectively reduced to 900 °C. The B₂O₃-doped LNT ceramics are also composed of Li₂TiO₃ss and “M-phase” phases. No other phase could be observed in the 0.5-2 wt.% B₂O₃-doped ceramics sintered at 840-920 °C. The addition of B₂O₃ induced no obvious degradation in the microwave dielectric properties but increased the τ_f values. Typically, the 0.5 wt.% B₂O₃-doped ceramics sintered at 900 °C have better microwave dielectric properties of ?_r = 49.2, Q × f = 8839 GHz, τ_f = 57.6 ppm/°C, which suggest that the ceramics could be applied in multilayer microwave devices requiring low sintering temperatures.     

Improved microwave dielectric properties of B2O3-doped Nd(Co1/2Ti1/2)O3 ceramics with near zero temperature coefficient of resonant frequency

The microwave dielectric properties and the microstructures of Nd(Co_1/2Ti_1/2)O₃ ceramics prepared by conventional solid-state route have been studied. The prepared Nd(Co_1/2Ti_1/2)O₃ exhibited a mixture of Co and Ti showing 1:1 order in the B-site. It is found that low-level doping of B₂O₃ (up to 0.75 wt.%) can significantly improve the density and dielectric properties of Nd(Co_1/2Ti_1/2)O₃ ceramics. Nd(Co_1/2Ti_1/2)O₃ ceramics with additives could be sintered to a theoretical density higher than 98.5% at 1320 °C. Second phases were not observed at the level of 0.25-0.75 wt.% B₂O₃ addition. The temperature coefficient of resonant frequency (τ_f) was not significantly affected, while the dielectric constants (?_r) and the unloaded quality factors Q were effectively promoted by B₂O₃ addition. At 1320 °C/4 h, Nd(Co_1/2Ti_1/2)O₃ ceramics with 0.75 wt.% B₂O₃ addition possesses a dielectric constant (?_r) of 27.2, a Q × f value of 153,000 GHz (at 9 GHz) and a temperature coefficient of resonant frequency (τ_f) of 0 ppm/°C. The B₂O₃-doped Nd(Co_1/2Ti_1/2)O₃ ceramics can find applications in microwave devices requiring low sintering temperature.     

Dielectric properties of barium strontium titanate thick films prepared by electrophoretic deposition

Ba_xSr_1−xTiO₃ (x = 0.5, 0.6, 0.7) thick films were prepared by electrophoretic deposition (EPD) technique on platinum metallic foils using BaTiO₃ and SrTiO₃ nanoparticles with different molar proportion of 1:1, 3:2 and 7:3, respectively. An isostatic pressure method was used to increase density of the thick films before high temperature sintering. Microstructures of the deposited films were examined with XRD and SEM techniques. Porosity of the thick films decreased after the isostatic pressure process. The Ba_0.5Sr_0.5TiO₃ thick films of 10 μm, 15 μm and 20 μm showed a tunability of 28.8%, 33.3% and 33.9%, respectively, at room temperature and at a biasing field of 2 kV/mm. The dielectric constant was from 2138 to 3446 and dielectric loss was from 0.016 to 0.011 at zero bias field at 10 kHz. The temperature dependence of dielectric constant was also measured and the effect of porosity and thickness on the electrical performance of the thick films was discussed.     

Temperature compensated Sr2Al2SiO7 ceramic for microwave applications

The Sr–Gehlenite (Sr₂Al₂SiO₇) ceramic has been prepared by the conventional solid-state ceramic route. Phase pure Sr₂Al₂SiO₇ (SAS) ceramic sintered at 1525 °C for 4 h has ?_r = 7.2 and Q_u × f = 33,000 GHz. The SAS showed large negative τ_f of −37.0 ppm/ °C. A low value of τ_f was achieved by preparing SAS–CaTiO₃ composite. The composite with 0.04 volume fractions (V_f) CaTiO₃ sintered at 1500 °C for 4 h showed good microwave dielectric properties: ?_r = 8.6, Q_u × f = 20,400 GHz and τ_f = +8.5 ppm/°C.     

Low loss Sr1−xCaxLa4Ti5O17 microwave dielectric ceramics

Microwave dielectric ceramics in the Sr_1−xCa_xLa₄Ti₅O₁₇ (0 ≤ x ≤ 1) composition series were prepared through a solid state mixed oxide route. All the compositions formed single phase ceramics within the detection limit of in-house X-ray diffraction when sintered in the temperature range 1450-1580 °C. Theoretical density and molar volume decreased due to the substitution of Ca²⁺ for Sr²⁺ which was associated with a decrease in the dielectric constant (?_r) and temperature coefficient of resonant frequency (τ_f) but an increase in quality factor, Qf_o. Optimum properties were achieved for Sr_0.4Ca_0.6La₄Ti₅O₁₇ which exhibited, ?_r ∼ 53.7, Qf_o ∼ 11,532 GHz and τ_f ∼ −1.4 ppm/°C.     

Specific heat, electrical resistivity and thermoelectric power of YbNi4Si

The studies of the specific heat, electrical resistivity and thermoelectric power of YbNi₄Si are reported. These studies are supported by magnetic susceptibility and X-ray photoemission spectroscopy (XPS) measurements. YbNi₄Si does not order magnetically down to 4 K. Nearly in the whole temperature range studied the magnetic susceptibility follows a Curie law with μ_eff = 4.15 μ_B/f.u. This effective magnetic moment is close to the value expected for the 4f¹³ configuration (4.54 μ_B). The Yb²⁺ and Yb³⁺ peaks observed by XPS in the valence band region confirm the domination of the Yb³⁺ valence state. Based on the specific heat measurements, the electronic specific heat coefficient γ = 25 mJ/mol/K² and the Debye temperature θ_D = 320 K were derived. A quadratic dependence of electrical resistivity at low temperatures has been observed. The Kadowaki-Woods ratio has been discussed. The thermoelectric power has been analyzed in the framework of the two band model.     

Elastic properties and Vickers hardness of optically transparent glass-ceramics with fresnoite Ba2TiSi2O8 nanocrystals

Optically transparent glass-ceramics (40BaO-20TiO₂-40SiO₂ (mol%)) consisting of nonlinear optical fresnoite Ba₂TiSi₂O₈ (BTS) nanocrystals (diameter: 100-200 nm) are fabricated, and their elastic properties and deformation behavior are examined as a function of the volume fraction (f) of BTS nanocrystals using cube resonance and Vickers indentation techniques. The elastic properties such as Young's modulus (E) increases linearly with increasing the volume fraction of nanocrystals, e.g., E = 84 GPa for f = 0% (glass) to E = 107 GPa for f = 54.5%. The Vickers hardness (H_v) and indentation fracture toughness (K_c) increase from 5.0 to 6.0 GPa for H_v and 0.48 to 1.05 MPa m^−1/2 for K_c with increasing the volume fraction (from f = 0% to f = 54.5%), but they do not change linearly against the volume fraction of nanocrystals. It is suggested that BTS nanocrystals themselves induce a high resistance against deformation during Vickers indenter loadings.