RTD与PHEMT集成的几个关键工艺

在新型的共振隧穿二极管(RTD)器件与PHEMT器件单片集成材料结构上，研究和分析了分立器件的制作工艺，给出了分立器件的制作工艺参数．利用上述工艺成功制作了RTD和PHEMT器件，并在室温下分别测试了RTD器件和PHEMT器件的电学特性．测试表明：在室温下，RTD器件的峰电流密度与谷电流密度之比提高到1.78;PHEMT器件的最大跨导约为120mS/mm,在Vgs＝0.5V时的饱和电流约为270mA/mm．这将为RTD集成电路的研制奠定工艺基础．     

国外光电子产品平台及能力概述

依照光电子器件的典型分类,对国外光电子器件的产品平台及能力 进行了整体概述。系统分析了激光器、发射器件及组件、显示器件、探测器件及组件、传 输器件及组件、连接器的平台研制与生产能力,并对其产品的发展趋势进行了展望。     

Application of charge-coupled devices to infrared detection and imaging

A review of infrared sensitive charge-coupled devices (IRCCD) is presented. Operational requirements of typical IRCCD applications are briefly introduced. IRCCD devices are divided into two major categories: a) Monolithic devices, which essentially extend the original CCD concept into the IR. Monolithic IRCCD's discussed include inversion-mode devices (with narrow bandgap semiconductor substrate), accumulation-mode devices (extrinsic wide bandgap semiconductor substrate), and Schottky-barrier devices (internal photoemission), b) Hybrid devices, in which the functions of detection and signal processing are performed in separate but integratable components by an array of IR detectors and a silicon CCD shift register unit. Hybrid IRCCD's discussed include both direct injection devices (in conjunction with photovoltaic IR detectors) and indirect injection devices (in conjunction with pyroelectric and photoconductive devices).     

毫米波固体器件的研究发展动态

——本文概述了目前国际上毫米波固体器件的发展动态.毫米波固体器件是实现毫米波系统固态化和小型化的关键.文中详细评述了毫米波固体功率器件、接收器件和单片集成电路,并介绍了毫米波超导器件以及某些新原理、新结构的毫米波固体器件.最后简要地报导了国内毫米波固体器件的研制情况.     

纳电子器件

随着电子器件的小型化 ,器件的尺寸已经到了介观尺寸 ,传统的器件日益接近其物理机理的禁区 ,一些新的介观器件随之出现。本文根据介观系统的新特点 ,介绍了几种典型的纳电子器件 ,并简单地介绍了量子干涉器件、共振隧穿器件、单电荷转移器件 ,量子点元胞自动机的工作机理和各自所体现的介观效应     

可穿戴设备安全威胁与防护措施

随着信息通信技术日新月异地发展,信息通信产品的设备形态和业务功能不断演进,可穿戴设备正在成为信息通信技术的发展热点。一方面,可穿戴设备极大地方便了人们的工作和生活;另一方面,伴随其El益开放的体系架构和不断壮大的业务功能,可穿戴设备同时给人们带来越来越多的安全威胁。本文首先介绍可穿戴设备发展现状,然后分析可穿戴设备面临的安全威胁,继而提出可穿戴设备需要的安全措施,最后展望了可穿戴设备安全的未来发展。     

Graphene‐Based Devices for Thermal Energy Conversion and Utilization

Thermal energy conversion and utilization of integrated circuits is a very important research topic. Graphene is a new 2D material with superior electrical, mechanical, thermal, and optical properties, which is expected to continue Moore's law and make breakthroughs in the direction of “More than Moore.” Graphene‐based functionalized devices are applied in various aspects, including breakthroughs in thermal devices, due to their high thermal conductivity and thermal rectification. According to the coupling of different physical quantities, graphene‐based thermal devices can be divided into four categories: uncoupled thermal devices, thermoacoustic coupling devices, thermoelectric coupling devices, and thermo‐optical coupling devices. The structure, working mechanism, and performance of these devices are discussed, as well as the coupling methods of physical quantities. Moreover, scale‐up production of graphene and prospect for future graphene‐based thermal devices are summarized. In‐depth study of the development tendency of these graphene‐based thermal devices is expected to contribute to the development of new high‐performance thermal nanoelectronic devices in the future.     

Flexible energy storage devices for wearable bioelectronics

With the growing market of wearable devices for smart sensing and personalized healthcare applications,energy stor-age devices that ensure stable power supply and can be constructed in flexible platforms have attracted tremendous research in-terests.A variety of active materials and fabrication strategies of flexible energy storage devices have been intensively studied in recent years,especially for integrated self-powered systems and biosensing.A series of materials and applications for flex-ible energy storage devices have been studied in recent years.In this review,the commonly adopted fabrication methods of flex-ible energy storage devices are introduced.Besides,recent advances in integrating these energy devices into flexible self-powered systems are presented.Furthermore,the applications of flexible energy storage devices for biosensing are summar-ized.Finally,the prospects and challenges of the self-powered sensing system for wearable electronics are discussed.     

Small signal properties of field effect devices

The small signal properties of field effect devices are treated analytically. The analysis is based upon an active, distributed transmission line analogy to the conductive channel of field effect devices. Within the limitations of the gradual channel approximation, a general analysis is presented which is applicable to both junction and MOS field effect devices. Equivalent circuits are obtained which describe field effect device characteristics in the region below saturation as well as in the current saturation region. Effects of parasitic elements on the terminal y parameters in practical devices are considered. Specific device models are considered for junction devices and MOS devices and the more important equivalent circuit parameters are evaluated in terms of the dc terminal voltages.     

数字信息时代的显示器件

本文简要介绍了目前显示器件的技术发展特点。随着数字信息技术的迅速发展，显示器件已经呈现出向越来越小和越来越大的两个不同应用方向。因此，无论是适用于手机和PDA的小型显示器件，还是适用于壁挂影视图像的大型显示器件，都对当今的电子显示器件提出不同的技术要求。本文通过对技术特征的分析和比较，探讨了显示器件的未来发展趋势。     

Reliability considerations of III-nitride microelectronic devices

The success of III-nitride optoelectronic devices paths the way towards emerging devices in microelectronics. These devices are currently at the threshold to commercialization, therefore reliability considerations are becoming increasingly important. This paper reviews the material and process technology of III-nitride microelectronic devices in the scope of reliability. Since statistical reliability data are lacking in the current state of research the review starts with a summary of how reliability can be designed into process modules being relevant for microelectronic devices. This includes a discussion of the most important issues of material growth, metallization, implantation, dry etching and surface passivation. The subsequent chapter focuses to microelectronic devices and highlights technological challenges that have to be met in order to obtain reliable devices. Finally, results of lifetime experiments (thermal aging) demonstrate that III-nitride devices have the potential for reliable operation even at elevated temperatures up to 400°C.     

A comparison of semiconductor devices for high-speed logic

The bipolar transistor and FET are compared, considering both today's most advanced implementations and "ultimate" scaled-down devices. The differences between the devices are quantified in terms of transconductance and intrinsic speed. Old limits are re-examined and ways of extending the devices toward their ultimate in performance are proposed. While the major emphasis is on silicon, a comparison is made with the GaAs MESFET. Other semiconductor devices are discussed in the context of "bipolar-like" and "FET-like" devices, and the HEMT is considered a very promising candidate for high-speed logic. While Josephson junction logic is not discussed at length, it is a continual point of reference. In addition to comparing devices, the on-chip wiring environment is discussed, especially concerning its impact on power-delay products.     

基于UWB、ZigBee的WPAN与WLAN的干扰

目前,大量的无线设备应用在2.4GHz这一开放频段,很明显各种设备之间存在着潜在的干扰问题,在将来的办公或家庭环境中,如何避免或减少各种WPAN设备与WLAN的相互射频干扰变得日益重要。分析了分别由UWB、ZigBee技术构成的2种新型WPAN设备和WLAN之间的影响,分别从WLAN设备链路的吞吐量和信噪比(RSN)等角度分析了802.11bWLAN与2种短距离技术设备的干扰,并进行了WPAN设备的工程实验和模拟仿真。     

基于智能接口的音频系统设计

在传统的底层硬件体系结构中,一个接口只能连接同种设备。在此,提出智能型接口技术的解决方案,使同一个接口可以连接异种异构设备,将音频系统与智能接口技术结合在一起,进一步完善了当前设备的应用,提高了现有资源的利用率。支持常用的USB存储设备和SD存储设备。     

金刚石薄膜半导体器件

介绍了金刚石薄膜的性质、当今金刚石薄膜半导体器件的技术、水平和性能。分析了金刚石薄膜作为半导体器件的优异性能、金刚石相对于硅的半导体器件性能的改善和存在的问题，并指出实现金刚石薄膜半导体器件的障碍。     

Nonvolatile semiconductor memory devices

An attempt is made to survey and assess the nonvolatile semiconductor memory devices including charge-storage devices and FET's with ferroelectric gate insulators. The charge-storage devices are further divided into two groups: 1) charges-trapping devices such as the MNOS and the MAOS, and 2) floating-gate devices such as the FAMOS and the DDC. Approaches for achieving virtual nonvolatility in otherwise volatile semiconductor memories are briefly disscused. Novel structures which provide nonvolatility as well as the theoretical limit of memory array density are also explored.     

微米纳米新型微电子器件可靠性技术发展方向研讨

介绍了新型微电子器件发展现状和主要技术，分析了微电子器件可靠性技术发展趋势，提出我国半导体器件可靠性技术发展对策和建议。     

纳米电子器件

概述了用于超高密度集成电子计算机的纳米尺寸电子开关器件的研究进展。讨论了场效应晶体管的两类替代物： （１） 量子效应和单电子固态器件, （２） 分子电子器件。提出了每一类器件的分类方法, 描述了其工作原理并对各种器件进行了比较     

Displaying a bright future [vacuum microelectronics]

Recent technical and market advances have created a resurgence of interest in miniature vacuum devices based on field-emission vacuum microelectronics. For several operational conditions, these new devices have inherent advantages over their solid-state counterparts. Vacuum microelectronic devices are less sensitive to temperature variations, provide high-speed switching capabilities, and are less susceptible to radiation damage. In addition, electron beams can be steered with external electric and magnetic fields, and electron devices are capable of operation with high current densities. In this article, we describe the development of this new generation of vacuum microelectronic devices and showcase some exciting applications arising from this technology, ranging from flat-panel displays to electron beam devices     

Digital CMOS IC's in 6H-SiC operating on a 5-V power supply

A CMOS technology in 6H-SiC utilizing an implanted p-well process is developed. The p-wells are fabricated by implanting boron ions into an n-type epilayer. PMOS devices are fabricated on an n-type epilayer while the NMOS devices are fabricated on implanted p-wells using a thermally grown gate oxide. The resulting NMOS devices have a threshold voltage of 3.3 V while the PMOS devices have a threshold voltage of -4.2 V at room temperature. The effective channel mobility is around 20 cm ²/Vs for the NMOS devices and around 7.5 cm²/Vs for the PMOS devices. Several digital circuits, such as inverters, NAND's, NOR's, and 11-stage ring oscillators are fabricated using these devices and exhibited stable operation at temperatures ranging from room temperature to 300°C. These digital circuits are the first CMOS circuits in 6H-SiC to operate with a 5-V power supply for temperatures ranging from room temperature up to 300°C