有机薄膜晶体管（OTFT）的研究进展

近几年来，有机薄膜晶体管（OTFT）有了飞跃的发展，可望在某些方面与无机晶体管电子元件进行竞争。本文综述了有机薄膜晶体管的优势、材料类型、器件制作方法的最新进展，以及目前需要解决的问题。     

Relieving the Photosensitivity of Organic Field-Effect Transistors

It is generally believed that the photoresponse behavior of organic field-effect transistors (OFETs) reflects the intrinsic property of organic semiconductors. However, this photoresponse hinders the application of OFETs in transparent displays as driven circuits due to the current instability resulting from the threshold voltage shift under light illumination. It is necessary to relieve the photosensitivity of OFETs to keep the devices stable. 2,6-diphenyl anthracene thin-film and single-crystal OFETs are fabricated on different substrates, and it is found that the degree of molecular order in the conducting channels and the defects at the dielectric/semiconductor interface play important roles in determining the phototransistor performance. When highly ordered single-crystal OFETs are fabricated on polymeric substrates with low defects, the photosensitivity (P) decreases by more than 10⁵ times and the threshold voltage shift (ΔV_T) is almost eliminated compared with the corresponding thin-film OFETs. This phenomenon is further verified by using another three organic semiconductors for similar characterizations. The decreased P and ΔV_T of OFETs ensure a good current stability for OFETs to drive organic light-emitting diodes efficiently, which is essential to the application of OFETs in flexible and transparent displays.     

含氟有机场效应晶体管材料的研究进展

在空气中稳定的n型有机半导体材料是当前有机场效应晶体管(OFET)研究的重要方向.分子中引入氟取代基和三氟甲基/全氟烷基可能会将有机半导体材料从p型转变成n型,同时还可提高有机半导体材料的稳定性.从分子结构的角度出发介绍了含氟类有机半导体材料的最新进展及其在场效应晶体管中的应用,并进一步提出了该领域的研究前景.     

A Methodology of Fabricating Novel Electrodes for Semiconductor Devices: Doping and Van der Waals Integrating Organic Semiconductor Films

Electrodes are indispensable components in semiconductor devices, and now are mainly made from metals, which are convenient for use but not ideal for emerging technologies such as bioelectronics, flexible electronics, or transparent electronics. Here the methodology of fabricating novel electrodes for semiconductor devices using organic semiconductors (OSCs) is proposed and demonstrated. It is shown that polymer semiconductors can be heavily p- or n-doped to achieve sufficiently high conductivity for electrodes. In contrast with metals, the doped OSC films (DOSCFs) are solution-processable, mechanically flexible, and have interesting optoelectronic properties. By integrating the DOSCFs with semiconductors through van der Waals contacts different kinds of semiconductor devices can be constructed. Importantly, these devices exhibit higher performance than their counterparts with metal electrodes, and/or excellent mechanical or optical properties that are unavailable in metal-electrode devices, suggesting the superiority of DOSCF electrodes. Given the existing large amount of OSCs, the established methodology can provide abundant electrode choices to meet the demand of various emerging devices.     

Organic Semiconductor Growth and Morphology Considerations for Organic Thin‐Film Transistors

Analogous to conventional inorganic semiconductors, the performance of organic semiconductors is directly related to their molecular packing, crystallinity, growth mode, and purity. In order to achieve the best possible performance, it is critical to understand how organic semiconductors nucleate and grow. Clever use of surface and dielectric modification chemistry can allow one to control the growth and morphology, which greatly influence the electrical properties of the organic transistor. In this Review, the nucleation and growth of organic semiconductors on dielectric surfaces is addressed. The first part of the Review concentrates on small‐molecule organic semiconductors. The role of deposition conditions on film formation is described. The modification of the dielectric interface using polymers or self‐assembled mono­layers and their effect on organic‐semiconductor growth and performance is also discussed. The goal of this Review is primarily to discuss the thin‐film formation of organic semiconducting species. The patterning of single crystals is discussed, while their nucleation and growth has been described elsewhere (see the Review by Liu et. al). 1 The second part of the Review focuses on polymeric semiconductors. The dependence of physico‐chemical properties, such as chain length (i.e., molecular weight) of the constituting macromolecule, and the influence of small molecular species on, e.g., melting temperature, as well as routes to induce order in such macromolecules, are described.     

Organic Light‐Emitting Transistors: Materials,Device Configurations,and Operations

Organic light‐emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field‐effect transistors (OFETs) and the light‐generation capability of organic light‐emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state‐of‐the‐art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source‐drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs.     

When Flexible Organic Field-Effect Transistors Meet Biomimetics: A Prospective View of the Internet of Things

The emergence of flexible organic electronics that span the fields of physics and biomimetics creates the possibility for increasingly simple and intelligent products for use in everyday life. Organic field-effect transistors (OFETs), with their inherent flexibility, light weight, and biocompatibility, have shown great promise in the field of biomimicry. By applying such biomimetic OFETs for the internet of things (IoT) makes it possible to imagine novel products and use cases for the future. Recent advances in flexible OFETs and their applications in biomimetic systems are reviewed. Strategies to achieve flexible OFETs are individually discussed and recent progress in biomimetic sensory systems and nervous systems is reviewed in detail. OFETs are revealed to be one of the best systems for mimicking sensory and nervous systems. Additionally, a brief discussion of information storage based on OFETs is presented. Finally, a personal view of the utilization of biomimetic OFETs in the IoT and future challenges in this research area are provided.     

Impact of Narrowing Density of States in Semiconducting Polymers on Performance of Organic Field-Effect Transistors

To improve the performance of organic field-effect transistors (OFETs) employing π-conjugated polymers, a basic understanding of the relationships between the material properties and device characteristics is crucial. Although the density of states (DOS) distribution is one of the essential material properties of semiconducting polymers, insights into how the DOS shape affects the mobility (µ), subthreshold swing (S), and contact resistance (R_C) in OFETs remain lacking. In this study, by combining sensitive DOS measurements and multilayered OFET structures, it is experimentally demonstrated that narrower DOS widths in the polymer channels lead to higher µ, smaller S, and lower R_C. By contrast, variation of the DOS in the bulk layer does not affect the performance. These results demonstrate a direct relationship between the polymer properties and OFET performance and highlight the importance of controlling the DOS width in π-conjugated polymers.     

Large Modulation of Charge Carrier Mobility in Doped Nanoporous Organic Transistors

Molecular doping of organic electronics has shown promise to sensitively modulate important device metrics. One critical challenge is the disruption of structure order upon doping of highly crystalline organic semiconductors, which significantly reduces the charge carrier mobility. This paper demonstrates a new method to achieve large modulation of charge carrier mobility via channel doping without disrupting the molecular ordering. Central to the method is the introduction of nanopores into the organic semiconductor thin films via a simple and robust templated meniscus‐guided coating method. Using this method, the charge carrier mobility of C₈‐benzothieno[3,2‐b]benzothiophene transistors is boosted by almost sevenfold. This paper further demonstrates enhanced electron transport by close to an order of magnitude in a diketopyrrolopyrrole‐based donor–acceptor polymer. Combining spectroscopic measurements, density functional theory calculations, and electrical characterizations, the doping mechanism is identified as partial‐charge‐transfer induced trap filling. The nanopores serve to enhance the dopant/organic semiconductor charge transfer reaction by exposing the π‐electrons to the pore wall.     

On the Role of Contact Resistance and Electrode Modification in Organic Electrochemical Transistors

Contact resistance is renowned for its unfavorable impact on transistor performance. Despite its notoriety, the nature of contact resistance in organic electrochemical transistors (OECTs) remains unclear. Here, by investigating the role of contact resistance in n‐type OECTs, the first demonstration of source/drain‐electrode surface modification for achieving state‐of‐the‐art n‐type OECTs is reported. Specifically, thiol‐based self‐assembled monolayers (SAMs), 4‐methylbenzenethiol (MBT) and pentafluorobenzenethiol (PFBT), are used to investigate contact resistance in n‐type accumulation‐mode OECTs made from the hydrophilic copolymer P‐90, where the deliberate functionalization of the gold source/drain electrodes decreases and increases the energetic mismatch at the electrode/semiconductor interface, respectively. Although MBT treatment is found to increase the transconductance three‐fold, contact resistance is not found to be the dominant factor governing OECT performance. Additional morphology and surface energy investigations show that increased performance comes from SAM‐enhanced source/drain electrode surface energy, which improves wetting, semiconductor/metal interface quality, and semiconductor morphology at the electrode and channel. Overall, contact resistance in n‐type OECTs is investigated, whilst identifying source/drain electrode treatment as a useful device engineering strategy for achieving state of the art n‐type OECTs.