Optical and barrier properties of thin-film encapsulations for transparent OLEDs

We investigate the optical and barrier properties of thin-film encapsulations (TFEs) for transparent organic light-emitting diodes (TOLEDs). To improve the barrier property of OLEDs, the number of dyads (Al₂O₃/polymer) and the thickness of polymer layer in the TFE structure are required to be increased. It is, however, demonstrated that a sharp dip appears in the transmittance of TFE films due to the interference of light caused by organic/inorganic multi-layered configuration, resulting in a dip in the top emission spectrum of TOLEDs. We have found that such a transmittance dip deepens when the number of dyads is large. What is worse, the number of transmittance dips and their sharpness are raised with increased thickness of the polymer layer. When the number of dyads is small, however, the effect of the polymer layer thickness on such a transmittance dip is weak. Therefore, we have addressed that the number of dyads needs to be reduced, but the thickness of the polymer layer should be increased to meet both optical and barrier properties of TOLEDs at the same time.     

Improvement of haptic feedback fidelity for telesurgical applications

A new controller design method for bilateral force-reflecting teleoperators orientated to telesurgical applications is presented. The impedance of the remote environment is estimated online and the parameters of the system controller are adaptively updated accordingly. The proposed method shows quite visible improvement of haptic (force) feedback fidelity under the condition of stability compared to traditional passivity-based approaches.     

AlN/GaN/AlN heterostructures grown on Si substrate by plasma-assisted MBE for MSM UV photodetector applications

The AlN/GaN/AlN heterostructures were successfully grown on silicon substrate by plasma-assisted molecular beam epitaxy (MBE). High purity gallium (7N) and aluminum (6N5) were used to grow GaN and AlN, respectively. The structural and optical properties of the samples have been investigated by high-resolution X-ray diffraction (HR-XRD), photoluminescence (PL), Raman spectroscopy, transmission electron microscopy (TEM), selected area electron diffraction (SAED), dark field scanning transmission electron microscopy (DF STEM), and high-angle annular dark field scanning transmission electron microscopy (HAADF STEM). HR-XRD measurement showed that the sample has a typical diffraction pattern of hexagonal AlN/GaN/AlN heterostructures. Raman spectra revealed all four Raman-active modes, i.e., GaN-like E₂ (H), AlN-like A₁ (TO), AlN-like E₂ (H), and AlN-like A₁ (LO) inside the AlN/GaN/AlN heterostructures. Good thickness uniformity of the layers and high-quality hetero-structures without cracking were confirmed by TEM, SAED, DF STEM and HAADF STEM. The fabricated AlN/GaN/AlN heterostructures based metal-semiconductor-metal (MSM) for the UV photodetector shows a rise and fall of photoresponses, suggesting that the AlN/GaN/AlN heterostructures have good carrier transport and crystallinity properties.     

Reliability aspects of microsensors and micromechatronic actuators for automotive applications

In modern cars microsensors and micromechatronic actuators play an essential and still increasingly important role as the interface between the vehicle with its complex functions of motor management, chassis systems, safety as well as comfort and convenience on the one hand and the respective electronic control units on the other hand. They have to fulfill their task in a harsh environment over the entire lifetime of an automobile. Therefore reliability aspects have moved more and more into the focus of engineering and research activities in microsystem technology. A methodical procedure is described that allows reliability issues to be approached efficiently. The implementation of the methodology is illustrated with real-life examples of reliability aspects of hot film mass air flow sensors, inertial sensors as well as piezoelectric actuators.     

High barrier properties of transparent thin-film encapsulations for top emission organic light-emitting diodes

This paper reported a low-temperature thin film encapsulation (TFE) process based on atomic layer deposition Al₂O₃ layer for top-emission organic light-emitting devices (TE-OLEDs). The barrier characteristics of both H₂O-based and O₃-based Al₂O₃ films were investigated. O₃-based Al₂O₃ TFE showed lower water vapor transmission rate (WVTR) of 8.7 × 10⁻⁶ g/m² day and longer continuous operation lifetime of 5 folds compared to the device with H₂O-based Al₂O₃ TFE under identical environmental and driving conditions. Furthermore, the extraction of emitting light of the devices with barrier layer was enhanced compared to the bared one. The theory simulation data were consistent with our experimental results and showed the potential for the design of TFE structures optimized for enhancing light transmission.     

Demonstration of 4H-SiC CMOS digital IC gates based on the mainstream 6-inch wafer processing technique

In this article, the design, fabrication and characterization of silicon carbide (SiC) complementary-metal-oxide-semiconductor (CMOS)-based integrated circuits (ICs) are presented. A metal interconnect strategy is proposed to fabricate the fundamental N-channel MOS (NMOS) and P-channel MOS (PMOS) devices that are required for the CMOS circuit configuration. Based on the mainstream 6-inch SiC wafer processing technology, the simultaneous fabrication of SiC CMOS ICs and power MOSFET is realized. Fundamental gates, such as inverter and NAND gates, are fabricated and tested. The measurement results show that the inverter and NAND gates function well. The calculated low-to-high delay (low-to-high output transition) and high-to-low delay (high-to-low output transition) are 49.9 and 90 ns, respectively.     

Platinum zone plates for hard X-ray applications

We describe the fabrication and evaluation of platinum zone plates for 5-12 kV X-ray imaging and focusing. These nano-scale circular periodic structures are fabricated by filling an e-beam generated mold with Pt in an electroplating process. The plating recipe is described. The resulting zone plates, having outer zone widths of 100 and 50 nm, show good uniformity and high aspect ratio. Their diffraction efficiencies are 50-70% of the theoretical, as measured at the European Synchrotron Radiation Facility. Platinum shows promise to become an attractive alternative to present hard X-ray zone plate materials due to its nano-structuring properties and the potential for zone-plate operation at higher temperatures.     

High performance top-emitting and transparent white organic light-emitting diodes based on Al/Cu/TcTa transparent electrodes for active matrix displays and lighting applications

It is challenging to obtain broadband emission covering as much of the visible light spectrum as possible in top-emitting white organic light-emitting diodes (TEWOLEDs) due to the well known microcavity effects. In this work, we achieved TEWOLED with three separate peak and negligible angular dependence by employing a high transmittance stack cathode Al (2 nm)/Cu (18)/TcTa (60 nm). The TEWOLED shows an efficiency of 25.6 cd/A, 20.1 Lm/W at 1000 cd/m², and low voltage of 4.2 V for 1222 cd/m². Synchronously, we achieved transparent white organic light-emitting diode (TWOLED) using this high transmittance stack cathode, the TWOLED exhibits similar spectrum and comparable luminance from both sides, and the maximum total efficiencies of the TWOLED are 28.6 cd/A, 24.9 Lm/W.     

蓝宝石衬底上Ka波段AlN/GaN高电子迁移率晶体管

We report the DC and RF characteristics of AlN/GaN high electron mobility transistors(HEMTs) with the gate length of 100 nm on sapphire substrates. The device exhibits a maximum drain current density of 1.29 A/mm and a peak transconductance of 440 m S/mm. A current gain cutoff frequency and a maximum oscillation frequency of 119 GHz and 155 GHz have been obtained, respectively. Furthermore, the large signal load pull characteristics of the AlN/GaN HEMTs were measured at 29 GHz. An output power density of 429 m W/mm has been demonstrated at a drain bias of 10 V. To the authors’ best knowledge, this is the earliest demonstration of power density at the Ka band for Al N/Ga N HEMTs in the domestic, and also a high frequency of load-pull measurements for Al N/Ga N HEMTs.     

Micromachined valves based on multilayer piezoelectric actuators

The design, fabrication and characteristics of a novel micromachined valve based on multilayer piezoelectric actuators (MPAs) are described for accurate fluid control. The micromachined MPA valve, which has a buckling effect, consists of three separate structures: a seat die, an actuator die and an MPA. The fabricated MPA valve shows a flow rate of 9.13 sccm at an applied DC voltage of 100 V with a 50% duty cycle and maximum nonlinearity of 2.24% FS. Therefore, the fabricated MPA valve is suitable for a variety of flow control equipment, a medical bio-system, and the automobile industry.     

Human cooperative wheelchair for haptic interaction based on dual compliance control

A human and a robot will carry out a task which is not attainable by themselves. In particular, a human recognizes environment and plans his trajectory without collision with obstacles. On the other hand, a robot generates a controlled force more than a human. In this paper, the best combination of human ability and robot capacity is considered. Based on force commands from a human, a robot supports it A reaction torque observer is implemented in a robot to observe an environmental disturbance. Environmental disturbance is classified into translational and rotational direction modes. As a result, adaptive force control in each mode is attained. Dual compliance control is applied to a wheelchair. A wheelchair that has the abilities of power-assist and relaxation of contact force is developed in this paper. As a result, operationality and stability are improved. The numerical and experimental results show the viability of the proposed method.     

基于新型压电驱动器的激光扫描器

在激光雷达等领域,通常希望激光光束实现低转动惯量高频率匀速扫描,而目前光束扫描器(如检流计式振镜、多面转镜等)很难达到这种要求,为此设计了一种基于新型压电驱动器的激光扫描器.激光扫描器基于-对新型的位移放大压电驱动器,有限元分析结果表明这种压电驱动器具有比传统杠杆式位移放大压电驱动器更好的高频特性.采用软件补偿和串联硬件陷波器相结合的开环控制方法,补偿压电陶瓷迟滞效应影响和抑制机械谐振,提高了扫描线性度,实现了高频三角波扫描.该扫描器还具有转动惯量低、体积小,结构简单、功耗低等优点.     

Micromachined chromium nitride thin-film pressure sensor for high temperature applications

The fabrication and characteristics of a micromachined chromium nitride (Cr-N) thin-film pressure sensor with high overpressure tolerance for high temperature applications are presented. The proposed pressure sensor consists of a Cr-N thin-film, patterned after a Wheatstone bridge configuration, and then sputter-deposited onto thermally oxidised Si membranes with a buried cavity for overpressure tolerance and an Al interconnection layer. This device is very suitable for high temperature integrated pressure sensors.     

Design of digital loaded-line phase-shift networks for microwave thin-film applications

This paper decribes the design approach, fabrication techniques, and electrical performance for two types of microwave hybrid thin-film phase shifters. Emphasis is placed on the practical aspects of the overall design and fabrication. A simplified set of design equations for loaded-line phase-shift networks is presented and divided into three categories based on the type of loading employed. The two circuits presented are a 4-bit 90° network employing single-section multibits to minimize physical size, and a 4-bit 360° network employing the 45° section as a basic building block.     

Creep modeling and identification for piezoelectric actuators based on fractional-order system

This paper deals with creep modeling and identification for the piezoelectric actuator (PEA). Creep is an essential phenomenon when a PEA operates over long periods of time. A fractional-order model is proposed by representing the PEA as resistocaptance, which is a novel approach. The simplified fractional-order PEA model results in a double-logarithmic creep. Identification methods for PEA parameters are presented. Experimental results validate the effectiveness of the proposed fractional-order creep model.     

基于非相干成像的透明物体波前测量方法

提出一种新的波前测量方法 ,这种方法采用了非相干成像和相移技术 ,通过相移可精确测量位相物体引起的成像光线偏折 ,然后计算波前分布。测量中 ,利用PC机显卡的双屏功能 ,其中一个显示由计算机产生的正弦灰度调制光栅图样 ,CCD记录下经过待测物体后的变形条纹图样 ,根据相移技术可以完成对透明物体波前的测量。在这一技术中 ,由于调制光栅图样是由PC产生 ,因此光栅的周期和方向可以灵活设置 ,并可以实现精确的相移。计算机模拟和实验验证了这一技术的可行性。与传统的波前干涉计量相比较 ,这种方法具有结构简单、成本低、灵活性高等优点。     

Novel two-step SDB technology for high-performance thin-film SOI/MOSFET applications

A novel two-step oxided silicon wafer direct bonding process (TSDB) for fabricating high-quality SOI substrates is presented, which has no contamination, no complex thinning process and no subsurface damage. The fracture strength of the SOI/TSDB material is 180 kg/cm/sup 2/. SOI/TSDB NMOS and PMOS devices (0.8-3 mu m) have shown that the typical values of electron and hole surface channel mobility are 680 and 320 cm/sup 2//Vs, respectively. A high device transconductance and high on-off current ratio have also been obtained.<>     

Friction modeling and compensation for haptic display based on support vector machine

As the presence of friction in a haptic display device seriously affects its performance, proper compensation of the frictional effects in such a device is of practical importance for advanced virtual reality applications where haptic display plays a critical role. This paper addresses the issue of friction modeling and compensation for haptic control system designs. A new method based on the Support Vector Machine (SVM) is developed in a controller design based on a two-port network to achieve accurate haptic display. The approximation model of friction is established offline through SVM learning and is used for online feed forward friction compensation. The advantages of this novel method are demonstrated through the experiments performed.     

In2O5Sn based transparent gate recessed channel MOSFET: RF small-signal model for microwave applications

This paper discusses the small signal RF model of Transparent Gate Recessed Channel (TGRC) MOSFET using a 3D TCAD device simulator. Small signal model is studied in terms of microwave parameters such as S (scattering) parameters, Z (impedance) parameters, Y (admittance) parameters, and h (hybrid) parameters with an aim to analyze the behavior of TGRC MOSFET at microwave frequency. All the results of TGRC-MOSFET have been compared with Conventional Recessed Channel (CRC) MOSFET having aluminum as gate metal electrode. Modeled results have also been compared with simulation results and found good agreement with the 3D-simulation results. Moreover, it is perceived from the results that 99.4% enhancement in the input impedance of TGRC-MOSFET and input admittance is improved by 32.9% in the proposed device (TGRC-MOSFET) in comparison to CRC-MOSFET. It has also been observed that the transit (cut-off) frequency (f_T) and maximum oscillator frequency (f_MAX) enhances significantly by 42.85% and 123% respectively in TGRC MOSFET owing to the remarkable reduction in intrinsic capacitances. Results reveal that the proposed device design improves the small signal behavior thus, may provide detailed insight to RF engineers for microwave applications and testing of RF ports.     

基于噪声调制的薄膜电阻加热温度控制系统

基于脉宽调制（PWM）技术的控制系统广泛应用于工业和日常生活中,随机脉宽调制（RP-WM）技术也已提出.利用耦合到系统的环境噪声和系统本身的噪声经加工处理后调制控制信号,由噪声信号的自相关函数和功率谱密度函数给出噪声调制脉冲的平均开关频率和平均加热功率的计算方法.利用模拟器件设计了一个简单的基于噪声调制的薄膜电阻加热温度控制系统.实验表明：控制系统能够稳定地运行,在一定范围内能抑制噪声,实现了高精度温度控制.