一种基于二氧化钒材料的可调谐吸波器设计

为了在THz波段获得TE波下的可调谐吸收频谱, 采用全波仿真的方法, 设计了一款基于二氧化钒材料的可调谐THz吸波器, 对该吸波器的吸收频谱、电场图、表面电流图以及能量损耗图进行分析, 并讨论了结构参量h₄, k以及入射角度θ对吸收频域和吸收带宽的影响。结果表明, 通过外部温控的方式改变二氧化钒谐振单元的物理特性可以获得可调谐的吸收频谱并改善吸波器的吸收性能, 该吸波器在温度T≥68℃时, 可以实现在2.70THz~3.36THz频段的宽带吸收(吸收率在90%以上), 相对带宽达到21.8%;在T＜68℃时, 可以实现多个单频点的吸收; 改变结构参量h₄, k可以改变吸收频点的位置以及吸收带宽, 改变入射角度θ可以影响吸波器的吸收效果。该研究对可调谐太赫兹器件的进一步探究是有帮助的。     

State filling in InAs quantum-dot laser structures

We have measured the passive modal absorption, modal gain, and spontaneous emission spectra of a quantum-dot system where the inhomogeneous broadening is sufficiently small so that the ground- and excited-state transitions can be spectrally resolved. Absorption by ground- and excited-state transitions is in the ratio 1:1.88 which is close to the ratio of 2 expected for dots with similar dimensions in two directions. The absorption cross section per dot is measured to be 1.1 /spl times/ 10/sup -14/ cm/sup 2/. Optical gain from the ground-state saturates with current at a maximum value of one third of that predicted from the measured absorption if the system is fully inverted. The measured population inversion factor spectrum shows that the carrier distributions cannot be described only by a single global Fermi distribution and that the system is not in overall equilibrium. However, using parameters obtained by fitting the absorption spectrum, we find that for these particular samples the inversion factor spectrum can be described by a possible model where the ground- and excited-state occupancies are each described by a Fermi distribution but with different quasi-Fermi energy separations. We speculate that photon mediation within the homogeneous linewidth could be one possible process which establishes quasi-equilibrium within each of the ground- and excited-state inhomogeneous distributions.     

Optical absorption of thin film on a Lambertian reflector substrate

A formula is derived for calculating the optical absorption of thin films deposited on a Lambertian reflector substrate. It is shown that compared with the case of flat reflecting substrate, the incoherent absorption is enhanced by a factor ofmepsilon_{1}in the weak absorption limit, where ε1is the real part of the film dielectric constant andm simeq 2is a slightly varying function of ε1. For a 0.5-µm a-SiHx(bandgap 1.7 eV) solar cell with a Lambertian reflector substrate, the total absorption in terms of the short-circuit current is calculated to be 18.63 mA/cm².     

Simultaneous measurement of the two-photon coefficient and free-carrier cross section above the bandgap of crystalline silicon

We report what is to our knowledge the first simultaneous measurement of the two-photon absorption coefficient and the free-carrier cross section above the bandgap in a semiconductor. This is also the first observation of two-photon absorption of 1 μm radiation in single-crystal Si at room temperature in a regime where a two-photon stepwise process involving indirect absorption followed by free-carrier absorption is usually dominant. A critical pulsewidth (and fluence) is established below (and above) which two-photon absorption cannot be neglected. Pulses that range from 4 to 100 ps in duration are then used to isolate the irradiance-dependent two-photon absorption from the fluence-dependent free-carrier absorption. We obtain an indirect two-photon absorption coefficient of 1.5 cm/GW and extract a free-carrier cross section of5 times 10^{-18}cm²by using a simple technique that does not require a knowledge of the actual carrier density.     

The effect of band-tails on the design of GaAs/AlGaAs bipolartransistor carrier-injected optical modulator/switch

The variations in the absorption coefficient and the refractive index in the waveguide region of a double-heterostructure N-AlGaAs/p-GaAs/N-AlGaAs bipolar transistor carrier-injected optical modulator/switch are calculated theoretically using a band-tail model. The refractive index change is calculated by a Kramers-Kronig analysis of the absorption curve, which changes in the vicinity of the absorption edge primarily because of the effect of band-filling, band-gap shrinkage, and plasma dispersion associated with the presence of free carriers. The performance of bipolar transistor carrier-injected optical modulator/switch is analyzed on the basis of the calculated results, including the alpha-parameter and the maximum modulation depth. It is shown that small frequency chirping and high modulation depth with low absorption loss can be achieved by properly selecting the optimum operating conditions     

Accurate determination of waveguide-fed p-i-n photodiode absorption

Experimental and theoretical determinations of the absorption of a waveguide fed GaInAs photodiode are presented. The absorption is determined as a function of the propagation length using μ-p-i-n diodes regularly spaced along the GaInAs absorbing layer. The detector absorption is as high as 2060 dB/cm. However, for propagation lengths longer than ~200 μm it falls to about 120 dB/cm. The results are analyzed using two different approaches. The first consists in determining the eigenmodes of both the passive waveguide and the detector/waveguide structure. The second is the beam propagation method (BPM). Both methods demonstrate that the absorption curve can be fully explained by the existence of two modes, of which the one with the lowest absorption is induced by the presence of an undoped InP buffer layer. Both eigenmode decomposition and BPM are in quantitative agreement with the experimental data     

Silicon temperature measurement by infrared absorption. Fundamentalprocesses and doping effects

The fundamental absorption mechanisms in silicon at 1.30 and 1.55 μm have been investigated in the temperature range of 500-800°C. For lightly doped wafers in this temperature range, the absorption at 1.55 μm is by free carriers. and that at 1.30 μm is predominantly by bandgap absorption. The effect of heavy substrate doping on infrared absorption at an elevated temperature has also been studied, and it was found that doping has little effect below levels of 7×10¹⁷ cm^-3. Above that level, the temperature dependence of free carrier absorption strongly affects the transmission as a function of temperature. The knowledge of the fundamental absorption processes is then used to predict the ultimate temperature ranges over which the technique will be useful     

Energy absorption mechanism by biological bodies in the near fieldof dipole antennas above 300 MHz

The energy absorption mechanism in the close near field of dipole antennas is studied by numerical simulations. All computations are performed and validated applying the three-dimensional multiple multipole software package. The numerical model of the plane phantom is additionally checked by accurate as possible experimental measurements. For the plane phantom, the interaction mechanism can be described well by H-field induced surface currents. The spatial peak specific absorption rate can be approximated within 3 dB by a formula given here based on the incident H-field or antenna current and on the conductivity and permittivity of the tissue. These findings can be generalized to heterogeneous tissues and larger biological bodies of arbitrary shape for frequencies above 300 MHz. The specific absorption rate is mainly proportional to the square of the incident H-field, which implies that in the close near field, the spatial peak specific absorption rate is related to the antenna current and not to the input power     

Intraband Radiation Absorption by Holes in InAsSb/AlSb and InGaAsP/InP Quantum Wells

Microscopic analysis of intraband radiation absorption by holes with their transition to the spin-split band for InAsSb/AlSb and InGaAsP/InP semiconductor quantum wells is performed in the context of the four-band Kane model. The calculation is performed for two incident-radiation polarizations: along the crystal-growth axis and in the quantum-well plane. It is demonstrated that absorption with transition to the discrete spectrum of spin-split holes has a higher intensity than absorption with transitions to the continuous spectrum. The dependences of the intraband absorption coefficient on temperature, hole density, and quantum- well width are thoroughly analyzed. It is shown that intraband radiation absorption can be the main mechanism of internal radiation losses in lasers based on quantum wells.     

Numerical Device Simulation of Double-Heterostructure Organic Laser Diodes Including Current-Induced Absorption Processes

We investigate the impact of induced absorption caused by injected charge carriers and excited states on the threshold current density of an organic laser diode using numerical simulations. The electrical properties of the device are described by a self consistent drift-diffusion model. The optical properties are calculated using a transfer matrix method. Nonradiative annihilation processes are included employing typical rate constants. In our approach, a three-layer double-heterostructure (DH) with typical organic material properties is studied, which exhibits a threshold current density of 564 A/cm². For this virtual device, upper limits for the charge carrier and triplet-triplet absorption cross section sigma_carrier=1.53times10^-3middotsigma_SE and sigmaT ₁ TN=4.34times10^-3middotsigma_SE have been calculated as a function of the stimulated emission cross section sigma_SE. Additionally, the role of device geometry and material properties concerning induced absorptions is studied. It is shown that the impact of absorption processes is not strongly influenced by the device geometry. By increasing the charge carrier mobilities to mu = 2 cm²/Vmiddots in the transport layers and mu = 0.2 cm²/Vmiddots in the emission layer, the impact of polaron absorption can be greatly reduced. In this case, laser operation might still be possible if sigma_carrier and sigma_SE are within the same order of magnitude. Decreasing the triplet lifetime tau T ₁ is a promising way to reduce the impact of triplet-triplet absorption. For sigmaT ₁ TN and sigma_SE being within the same order of magnitude, the triplet lifetime tau T ₁ has to be reduced to 1 ns for laser operation.     

Ga_xIn_(1-x)P/AlGaInP多量子阱的吸收/反射光谱:多光束干涉的影响与消减

通过测量GaAs基GaxIn1-xP/AlGaInP多量子阱的光学吸收谱 ,揭示出采用吸收谱研究该量子阱系统所遭遇的困难 ,并判明吸收谱中高频振荡干扰的来源为多光束干涉 ,从而指出消减振荡干扰的有效途径在于降低量子阱样品的有效厚度 .提出了适用于反射光谱测量的样品结构 ,并在实验中观察到激子跃迁 .通过对反射谱进行导数操作 ,达到了准确测定激子跃迁能量的目的 ,为采用反射谱法研究该量子阱系统的光学特性提供了技术基础     

高平坦度可调谐多通道吸收器的优化设计

为了提升多通道吸收器的平坦度和光谱特性的可调性,本文构建了一种硅基底/铝底板/银单缝/石墨烯/二氧化硅(SiO₂)介质层的五层结构多通道吸收器。不但吸收光谱特性易调谐,各通道平坦度也可提升到2.84 dB。基于电磁场时域有限差分法(finite-difference time-domain, FDTD)从理论上分析了结构设计尺寸对吸收光谱的影响规律,同时优化了设计结构。模拟结果证明,吸收器顶层设置SiO₂介质层和单缝内填充Au均可显著增大吸收通道的平坦度,同时通过调节顶层SiO₂或上层石墨烯的宽度,可有效调谐吸收光谱通道数、通道间隔和单通道带宽;尤其可通过改变石墨烯费米能级实施吸收频段和吸收率的需求选择,在生化检测、环境监测和智能传感等领域均具有较好的应用前景。     

Analysis and design of surface-normal Fabry-Perot electroopticmodulators

Design equations relating the refractive index shift, absorption change, cavity length, and grating properties of Fabry-Perot modulators are derived. Experimental results of reflection modulators with GaAs/AlGaAs multiple-quantum-well active regions are given. The design equations are applied by investigating the optimization of the reflectivity modulation and the sensitivity of the performance on the operating conditions. The modulation is found to be determined mainly by the index shift and is less sensitive to the accompanying absorption change for a chirp greater than one where the chirp is defined as the ratio of the real part of index change to the imaginary part. Modulation can also be obtained via absorption modulation when the chirp is small. However, the residual loss in the cavity with multiple quantum wells should be kept lower than 500 cm^-1     

P-GN/Ni复合材料的制备及其微波吸收性能研究

本文采用一步溶剂热法成功制备了磷掺杂石墨烯/Ni纳米复合材料(P-GN/Ni),并系统研究了其微纳结构和微波吸收性能。透射电镜(TEM)结果显示Ni纳米颗粒呈海胆状,并均匀地负载在半透明褶皱的磷掺杂石墨烯(P-GN)上。相比单独的海胆状Ni纳米颗粒,P-GN/Ni纳米材料表现出优异的微波吸收能力。在厚度仅为1.5 mm时,复合材料在17.3 GHz下反射损耗值(RL)达到了-34.8 dB且有效吸收带宽(RL<-10 dB)为3.7 GHz。复合材料的厚度为1.5-5.0 mm时,其有效吸收带宽为14.9 GHz(3.1-18 GHz),覆盖S波段到X波段,在微波吸收领域具有潜在的应用价值。微波吸收机制研究表明P-GN的引入,一方面利用磁损材料与电损材料的协同效应优化了阻抗匹配,另一方面极大地增加了材料的电导率和界面极化能力,提高了复合材料对电磁波的衰减能力。     

Determination of Power Absorption in Man Exposed to High Frequency Electromagnetic Fields by Thermographic Measurements on Scale Models

When the body of man, small compared to a wavelength, is exposed to high frequency (HF) electromagnetic (EM) fields, the absorbed power density patterns and total absorbed power may be approximated by the simple superposition of the internal electric fields obtained from the quasistatic coupling characteristics of the electric and magnetic field components determined independently. These characteristics were obtained for full scale man by thermographic studies of power absorption in scale models of man exposed to fields at frequencies scaled up inversely proportional to the model size. A VHF resonant cavity was used to provide the necessary field strengths for producing measurable power absorption patterns under simulated HF exposure conditions. The results indicate that peak power absorption densities as high as 5.63 W/kg can be produced in man exposed to 10 mW/cm2 31 MHz radiation fields. The results show that the absorption decreases as the square of the frequency as predicted by theory for frequencies below 31 MHz.     

Study of the XeCl laser pumped by a high-intensity electron beam

We present the results of a detailed experimental study of the XeCl laser pumped by a high-intensity electron beam. The laser system was optimized as an oscillator for mixtures of Xe and HCl with Ne, Ar, and Kr diluents. The peak intrinsic efficiency (laser energy out/electron-beam energy deposited) was near 4.5 percent for each of these diluents. Small-signal gain and background absorption were measured as a function of electron-beam deposition rate from 0.4 to 6 MW/ cm³. The ratio of small-signal gain to absorption was found to be constant over this range with a value of ∼5. Measurements of absorption in the presence of a large photon flux indicated that there was no appreciable saturable contribution to the absorption. Measurements of fluorescence from theBandCstates indicate that collisional mixing between these states is very rapid. The formation efficiencies of theBandCstates are estimated to be 0.15 and 0.05, respectively. A vibrational relaxation rate of between 1 and1.5 times 10^{-10}cm³. s^-1was determined. The effect of this finite relaxation rate is to reduce the energy available to the stimulated process by a factor of 0.67-0.75. Estimates of the XeCl* deactivation rates by HCl and electrons were also obtained. A value of1.7 times 10^{-9}cm³. s^-1was obtained for quenching by HCl, and a value ofsim 1 times 10^{-7}cm³. s^-1was estimated for electron deactivation.     

Gain measurements on uniformly excited HF/DF TEA lasers

The gain of a uniformly excited HF/DF TEA laser was measured to be 76 dB/m for HF and 39 dB/m for DF. The gain is followed by an absorption which decays with10-50mus time constants attributed to V-T and V-R relaxation processes, Limited measurements on the HCl system show similar absorption that persists for about 50 ms, limiting the pulse repetition rate.     

Nonlinear absorption in n-i-p-i-MQW structures

Absorptive nonlinearity in a GaAs/AlGaAs n-i-p-i-MQW (multiple quantum well) structure consisting of alternating n-AlGaAs, i-GaAs/AlGaAs MQW, and p-AlGaAs layers is investigated. A change in the absorption coefficient of more than 4000/cm is obtained in the i-MQW layer with an extremely low excitation intensity on the order of 1 mW/cm ². The figure of merit for absorptive nonlinearity, σ _ch, defined as the change in the absorption coefficient induced by excitation of an electron-hole pair per unit volume, is experimentally evaluated to be 7×10^-13 cm², which is an order of magnitude larger than that for saturation of excitonic absorption in a conventional MQW structure. This experimental value agrees well with the theoretical estimation, which is calculated assuming an optical nonlinear process