Mechanical and thermal properties and microstructural evolution of Ta-doped Nb4AlC3

(Nb_1-xTa_x)₄AlC₃ (x = 0–0.5) ceramics were prepared by the hot press sintering method. The XRD results show that the second phase (Nb_1-xTa_x)C is formed when the Ta content increases to 25 mol%. The SEM micrographs show that (Nb_1-xTa_x)C has a core/rim structure, whose formation mechanism was also investigated. Substituting some Ta for Nb can significantly improve the mechanical properties of Nb₄AlC₃. (Nb_0.75Ta_0.25)₄AlC₃ exhibits an excellent fracture toughness of 8.3 ± 0.3 MPa m^1/2 at room temperature (RT). The highest Young's modulus (349 ± 16 GPa) and Vickers hardness (4.5 ± 0.3 GPa) at RT are exhibited by the (Nb_0.5Ta_0.5)₄AlC₃ sample, which correlate to increases of 18% and 80%, respectively, compared with those of Nb₄AlC₃. The flexural strengths of (Nb_0.5Ta_0.5)₄AlC₃ are 439 ± 18 MPa at RT and 344 ± 22 MPa at 1100 °C, which correlate to increases of 27% and 45%, respectively, compared with those of Nb₄AlC₃. The solid solution of Ta and the formation of (Nb_1-xTa_x)C are beneficial to the strengthening of Nb₄AlC₃. The coefficient of thermal expansion (CTE) increases slightly from 7.08 × 10⁻⁶ K⁻¹ for Nb₄AlC₃ to 7.24 × 10⁻⁶ K⁻¹ for (Nb_0.75Ta_0.25)₄AlC₃ at 25–1400 °C. The thermal conductivity of (Nb_0.75Ta_0.25)₄AlC₃ (28.4–29.8 W/m·K) is higher than that of Nb₄AlC₃ (18.1–21.2 W/m·K) over the whole test range (25–1000 °C). Owing to their excellent mechanical and thermal properties, Ta-doped Nb₄AlC₃ ceramics have good potential as structural materials.     

Two-dimensional Nb-based M4C3Tx MXenes and their sodium storage performances

The MAX phases and MXenes are attractive materials for diverse applications. In this work, the two-dimensional Nb_3.5Ta_0.5C₃T_x and Nb_3.9W_0.1C₃T_x MXenes and the based phase Nb₄C₃T_x (where T_x is a surface termination) were synthesized by selective etching off aluminum, Al, from their corresponding MAX phase ceramics Nb_3.5Ta_0.5AlC₃, Nb_3.9W_0.1AlC₃ and Nb₄AlC₃. The XRD results indicate that the intermediate Al layers have been removed as the intensity of the major peaks of all MAX ceramics were reduced. The typical multilayered structure also confirms the successful synthesis of MXenes. X-ray photoelectron spectroscopy (XPS) shows that Nb⁰ exists in the three MAX ceramics owing to the metallic Nb-Nb bonding, which is inherent in the MAX ceramics. Since oxidation in the etching process is inevitable, there are some high-valent oxidation states exhibiting in the M-site elements. The electrochemical performance of the as-prepared MXenes towards sodium-ion batteries (SIBs) was further examined by cyclic voltammetry (CV), galvanostatic charge-discharge and rate performance tests. The results exhibit that the based phase Nb₄C₃T_x shows better electrochemical performance than Nb_3.5Ta_0.5C₃T_x and Nb_3.9W_0.1C₃T_x.     

Effects of Sb content on electrical properties of lead-free piezoelectric (K0.4425Na0.52Li0.0375) (Nb0.9625−xSbxTa0.0375)O3 ceramics

Lead-free (K_0.4425Na_0.52Li_0.0375) (Nb_0.9625−xSb_xTa_0.0375)O₃ piezoelectric ceramics were prepared by the conventional sintering method. The effects of the Sb content on the phase structure, microstructure, dielectric, piezoelectric, and ferroelectric properties of the (K_0.4425Na_0.52Li_0.0375) (Nb_0.9625−xSb_xTa_0.0375)O₃ ceramics were investigated. The much higher Pauling electronegativity of Sb compared with Nb makes the ceramics more covalent. By increasing x from 0.05 to 0.09, all samples exhibit a single perovskite structure with an orthorhombic phase over the whole compositional range, and the bands in the Raman scattering spectra shifted to lower frequency numbers. The grain growth of the ceramics was improved by substituting Sb⁵⁺ for Nb⁵⁺. Significantly, the (K_0.4425Na_0.52Li_0.0375) (Nb_0.8925Sb_0.07Ta_0.0375)O₃ ceramics show the peak values of the piezoelectric coefficient (d₃₃), electromechanical coupling coefficient (k_p), and dielectric constant (?), which are 304 pC/N, 48% and 1909, respectively, owing to the densest microstructure of typical bimodal grain size distributions. Besides, the underlying mechanism for variations of the electrical properties due to Sb⁵⁺ substitution was explained in this work.     

High dielectric permittivity and electrostrictive strain in a wide temperature range in relaxor ferroelectric (1-x)[Pb(Mg1/3Nb2/3)O3-PbTiO3]-xBa(Zn1/3Nb2/3)O3 solid solutions

High electric field-induced strain with ultralow hysteresis, which is often generated based on electrostrictive effects in ferroelectric materials, is highly desired due to its potential applications in high-precision displacement actuators. In this paper, (1-x)[Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃]-xBa(Zn_1/3Nb_2/3)O₃ [(1-x)(PMN-PT)-xBZN] ceramics were fabricated by a solid-state reaction method. The effect of Ba(Zn_1/3Nb_2/3)O₃ (BZN) content on dielectric and electrostrictive properties in relaxor ferroelectric PMN-PT solid solutions was investigated in detail by dielectric spectra, polarization-electric field (P-E) hysteresis loops and strain-electric field (S-E) curves. With an increasing BZN content, the temperature stability of the dielectric permittivity of (1-x)(PMN-PT)-xBZN is improved due to the formation of two coexistent phases. A high electrostrictive strain (~0.17% at 60?kV/cm) with an ultralow hysteresis (<10%) characteristic is obtained in a composition where x?=?0.1725. The strain versus polarization (S-P) curves measured from 30?°C to 130?°C can be well fitted based on a quadratic relation, suggesting the dominating role of the electrostrictive effect. The longitudinal electrostrictive coefficient Q₃₃ for this system ranges from 0.0254?m⁴/C² to 0.0318?m⁴/C². Our results suggest that (1-x)(PMN-PT)-xBZN ferroelectric ceramics are potential candidates for applications in capacitors and high-precision displacement actuators.     

Low-temperature preparation of Si3N4/SiC porous ceramics via foam-gelcasting and microwave-assisted catalytic nitridation

Si₃N₄/SiC porous ceramics were fabricated by a novel foam-gelcasting and microwave-assisted catalytic nitridation method at a temperature as low as 1273?K for 60?min or after only 10?min at 1373?K utilizing commercial Si and SiC with trace of impurity Fe (0.33?wt%) as starting materials. The Si₃N₄/SiC porous ceramics containing porosity of 68.54?±?0.73% which were fabricated at 1373?K for 10?min had flexural and compressive strengths of 5.28?±?0.17?MPa and 12.86?±?1.55?MPa.     

High-temperature thermoelectric properties of polycrystalline CaMn1-xNbxO3-δ

The structural and thermoelectric (TE) properties of polycrystalline CaMn_1-xNb_xO_3-δ (0.025?≤?x?≤?0.25) were studied with X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and electrical transport measurements, with an emphasis placed on the Nb⁵⁺ content. The CaMn_1-xNb_xO_3-δ crystallized in an orthorhombic perovskite structure of the Pnma space group. The density and grain size of the CaMn_1-xNb_xO_3-δ samples gradually decreased when Nb⁵⁺ ions substituted Mn⁴⁺ ions. The CaMn_0.95Nb_0.05O_3-δ sample contained charge-ordered domains, stacking faults, and micro-twins. The substitution of Nb⁵⁺ for Mn⁴⁺ up to x?=?0.15 led to an increase in electrical conductivity, mainly due to an increased electron concentration. The CaMn_1-xNb_xO_3-δ samples with low Nb⁵⁺ contents (0.025?≤?x?≤?0.15) showed metallic behavior, whereas those with high Nb⁵⁺ contents (0.2?≤?x?≤?0.25) showed semiconducting behavior. The Nb⁵⁺ substitution lowered the absolute value of the Seebeck coefficient for the CaMn_1-xNb_xO_3-δ samples due to an increased electron concentration. The largest power factor (1.19?×?10^?4 W?m^?1 K^?2) was obtained for CaMn_0.95Nb_0.05O_3-δ at 800?°C. The partial substitution of Nb⁵⁺ for Mn⁴⁺ in CaMnO_3-δ proved to be highly effective for improving high-temperature TE properties.     

In situ synthesis,mechanical properties,and microstructure of reactively hot pressed WB4 ceramic with Ni as a sintering additive

In this study, tungsten tetraboride (WB₄) ceramics were synthesized in situ from powder mixtures of W and amorphous B with Ni as a sintering aid by reactive hot pressing method. The as-synthesized ceramics exhibited porosity as low as 0.375% and ultra-high Vickers hardness (H_v), as much as 49.808?±?1.683?GPa (for the low load of 0.49?N). It was seen that the addition of Ni greatly improved the sinterability of WB₄ ceramic. Besides, the flexural strength and fracture toughness of WB₄ ceramic were measured for the first time to be 332.857?±?36.763?MPa and 4.136?±?0.259?MPa?m^1/2, respectively, suggesting that the ceramic has good mechanical properties. The effects of sintering temperature and holding time on the densification, Vickers hardness, and mechanical properties of WB₄ ceramics were also investigated systematically as part of our study. The results indicated that increasing the sintering temperature can obviously improve the densification and mechanical properties of the ceramics. The bulk density and Vickers hardness of WB₄ ceramic sintered at 1650?°C for 60?min under 30?MPa revealed the highest values of 6.366?g?cm^?3 and 27.948?±?0.686?GPa (for the high load of 9.8?N), respectively. The flexural strength increased to the highest value of 332.857?±?36.763?MPa for sintering temperature up to 1550?°C, but decreased slightly as the sintering temperature further increased to 1650?°C. On the other hand, the fracture toughness increased gradually with increasing temperature. It was also found that Vickers hardness showed a similar trend as the densification of the samples with increasing temperature and holding time. Besides, no obvious improvements in the densification, mechanical properties, and Vickers hardness of the samples with sintering time were observed in this study. The microstructure and fracture behaviours of the as-synthesized WB₄ ceramic were also revealed, and the toughening mechanism has been discussed.     

Microwave dielectric properties of ultra-low loss Li2MgTi0.7(Mg1/3Nb2/3)0.3O4 ceramics sintered at low temperature by LiF addition

In this work, ultra-low loss Li₂MgTi_0.7(Mg_1/3Nb_2/3)_0.3O₄ ceramics were successfully prepared via the conventional solid-state method. X-ray photoelectron spectroscopy (XPS), thermally stimulated depolarization current (TSDC) and bond energy were used to determine the distinction between intrinsic and extrinsic dielectric loss in (Mg_1/3Nb_2/3)⁴⁺ ions substituted ceramics. The addition of (Mg_1/3Nb_2/3)⁴⁺ ions enhances the bond energy in unit cell without changing the crystal structure of Li₂MgTiO₄, which results in high Q·f value as an intrinsic factor. The extrinsic factors such as porosity and grain size influence the dielectric loss at lower sintering temperature, while the oxygen vacancies play dominant role when the ceramics densified at 1400?°C. The Li₂MgTi_0.7(Mg_1/3Nb_2/3)_0.3O₄ ceramics sintered at 1400?°C can achieve an excellent combination of microwave dielectric properties: ε_r =?16.19, Q·f?=?160,000?GHz and τ_f =??3.14?ppm/°C. In addition, a certain amount of LiF can effectively lower the sintering temperature of the matrix, and the Li₂MgTi_0.7(Mg_1/3Nb_2/3)_0.3O₄-3?wt% LiF ceramics sintered at 1100?°C possess balanced properties with ε_r?=?16.32, Q·f?=?145,384?GHz and τ_f =??16.33?ppm/°C.     

High energy storage performance of [(Bi0.5Na0.5)0.94Ba0.06]0.97La0.03Ti1-x(Al0.5Nb0.5)xO3 ceramics with enhanced dielectric breakdown strength

Novel lead-free [(Bi_0.5Na_0.5)_0.94Ba_0.06]_0.97La_0.03Ti_1-x(Al_0.5Nb_0.5)_xO₃ ceramics (BNBLT-xAN) were prepared by the conventional solid state sintering method. The dielectric, ferroelectric, ac impedance and energy-storage performance were systematically investigated. Temperature dependent permittivity curves showed that relaxation properties of sintered ceramics gradually diminished with the increase of AN. The introduction of AN gave rise to a slimmer polarization hysteresis loop (P-E) and an enhanced dielectric breakdown strength (DBS). Therefore, the optimum energy-storage performance were realized at x?=?0.05 with the energy-storage density (W_rec) of 1.72?J/cm³ and energy-storage efficiency (η) of 85.6% at 105?kV/cm, accompanied with the excellent temperature stability and fatigue performance. The results demonstrated that BNBLT-xAN system was a promising lead-free candidate for energy-storage applications.     

Effect of TiO2 on sinterability and physical properties of pressureless sintered Ti3AlC2 ceramics

TiO₂ was selected as effective sintering aid for pressureless sintering of Ti₃AlC₂ ceramics in this study. The addition of only 5?wt% TiO₂ largely promotes the densification and nearly dense Ti₃AlC₂ ceramic was obtained by pressureless sintering at 1500?°C. Significant strengthening and toughening effects were observed with the addition of TiO₂. High Vickers hardness, flexural strength and fracture toughness of 3.22?GPa, 298?MPa and 6.2?MPa?m^?1/2, respectively, were achieved in specimen pressureless sintered with 10?wt% TiO₂. Additionally, the addition of 5?wt% TiO₂ had no deleterious effect on the excellent oxidation resistance of Ti₃AlC₂ ceramic under 1200?°C water vapor atmosphere, while addition of 10?wt% TiO₂ accelerates the oxidation rate by two orders of degree.     

Microstructure and mechanical properties of Nb4AlC3 MAX phase synthesized by reactive hot pressing

The present study aims at synthesizing the Nb₄AlC₃ MAX phase by reactive hot pressing using Nb:Al:NbC as starting materials. In order to identify the reaction path, interrupted tests at intermediate temperatures were performed as well as differential thermal analyses (DTA) of powders. Coupling between DTA and XRD data and SEM/EDS analyses of the samples allows a better understanding of the reaction mechanisms. Pure and fully dense Nb₄AlC₃ samples were obtained and characterized for the first time by EBSD and SEM to assess, using an original method, grain size and microstructure. For instance, in the present study, an average grain length of 5–7?µm was obtained.Standard mechanical characterizations showed interesting properties: K_Ic≈?6?MPa?m^1/2, E?≈?350?GPa and α?≈?7.10^?6 °C^?1. Oxidation performance of Nb₄AlC₃ was evaluated at 1100?°C under cyclic conditions. A breakaway regime was instantaneously established for this condition, thus demonstrating the impossibility of using such an unprotected material for structural applications at high temperature in air environment.     

Phase composition,Raman spectra,infrared spectra and dielectric properties of Li2MgTi1-x(Mg1/3Nb2/3)xO4 ceramics at microwave frequency

The Li₂MgTi_1-x(Mg_1/3Nb_2/3)_xO₄ (0?≤x?≤?0.5) ceramics were prepared by the conventional solid-state method. The relationship among phase composition, substitution amount and microwave dielectric properties of the ceramics was symmetrically investigated. All the samples possess the rock salt structure with the space group of Fm-3m. As the x value increases from 0 to 0.5, the dielectric constant linearly decreases from 16.75 to 15.56, which can be explained by the variation of Raman spectra and infrared spectra. The Q·f value shows an upward tendency in the range of 0?≤x?≤?0.3, but it then decreases when x?>?0.3. In addition, the temperature coefficient of resonant frequency (τ_f) is shifted toward zero with the increasing (Mg_1/3Nb_2/3)⁴⁺ addition. By comparison, the Li₂MgTi_0.7(Mg_1/3Nb_2/3)_0.3O₄ ceramics sintered at 1400?°C can achieve an excellent combination of microwave dielectric properties: ε_r=?16.19, Q·f =?160,000?GHz and τ_f =??3.14?ppm/°C.     

Microwave dielectric properties of Ba3Ti4−x(Zn1/3Nb2/3)xNb4O21 for low temperature co-fired ceramics

The effects of substitution of (Zn_1/3Nb_2/3) for Ti on the sintering behavior and microwave dielectric properties of Ba₃Ti_4−x(Zn_1/3Nb_2/3)_xNb₄O₂₁ (0 ≤ x ≤ 4) ceramics have been investigated. The dielectric constant (?_r) and the temperature coefficient of the resonant frequency (τ_f) of Ba₃Ti_4−x(Zn_1/3Nb_2/3)_xNb₄O₂₁ ceramics decreased with increasing x. However, the Q × f values enhanced with the substitution of (Zn_1/3Nb_2/3) for Ti. It was found that a small amount of MnCO₃-CuO (MC) and ZnO-B₂O₃-SiO₂ (ZBS) glass additives to Ba₃Ti_4−x(Zn_1/3Nb_2/3)_xNb₄O₂₁ (x = 2) ceramics lowered the sintering temperature from 1250 to 900 °C. And Ba₃Ti_4−x(Zn_1/3Nb_2/3)_xNb₄O₂₁ (x = 2) ceramics with 1 wt% MC and 1 wt% ZBS sintered at 900 °C for 2 h showed excellent dielectric properties: ?_r = 53, Q × f = 14,600 GHz, τ_f = 6 ppm/°C. Moreover, it has a chemical compatibility with silver, which made it as a promising material for low temperature co-fired ceramics technology application.     

Combining high energy efficiency and fast charge-discharge capability in novel BaTiO3-based relaxor ferroelectric ceramic for energy-storage

Compared with the other types of ceramic capacitors, relaxor ferroelectric ceramics demonstrate superior potential in energy-storage fields due to their higher energy efficiency, faster charge-discharge rate, and better temperature stability. In this study, we designed and synthesized a novel high performance BaTiO₃-based ((1-x)BaTiO₃-xBi(Ni_2/3Nb_1/3)O₃, x?=?0.08, 0.10, 0.12, and 0.14) energy-storing ceramics through ferroelectric properties modulation, which display typical relaxor characteristics. The optimum energy storage properties, i.e. ultrahigh energy efficiency (95.9%), high energy-storage density (2.09?J?cm^?3) and good temperature stability (the fluctuations in energy-storage properties are less than 5% over 20–120?°C) are obtained at x?=?0.12 (0.88BT-0.12BNN). The 0.88BT-0.12BNN relaxor ferroelectric ceramic demonstrates obviously superior comprehensive energy-storage properties than most of other unleaded ceramics. Besides, investigation efforts were also spent on the pulsed charge-discharge performance of the 0.88BT-0.12BNN ceramic to evaluate its feasibility as energy-storage devices. More importantly, the 0.88BT-0.12BNN ceramic also exhibits outstanding charge-discharge performance with fast discharge rate (t_0.9 <?100?ns), a high level of power density (36.9?MW?cm^?3), and good temperature stability. These excellent performance parameters qualify this novel and environmentally friendly BaTiO₃-based ceramic as a promising alternative option in energy-storage section. Meanwhile, this study also provides an effective approach to attain high energy-storage density as well as energy efficiency in BaTiO₃-based relaxor ferroelectric ceramics.     

Decreasing polar-structure size: Achieving superior energy storage properties and temperature stability in Na0.5Bi0.5TiO3-based ceramics for low electric field and high-temperature applications

It is a grand challenge to achieve high energy density (W) and efficiency (η) simultaneously under a low electric field (LE) to obtain new high energy storage capacitors. Similar to anti-ferroelectrics, the (1-x)NBT-xBaMg_1/3Nb_2/3O₃ relaxor material exhibits a non-linear dependence on electric field, which is caused by a reversible field-induced phase transition. This leads to high W (2.37 J/cm³) and η (81.5 %) under a LE of 155 kV/cm, which makes it superior to other bulk ceramics. Combining large polarizability of Ba²⁺ in A-site and local structural heterogeneity on the B-site by Mg_1/3Nb_2/3⁴⁺, enhanced relaxor behavior and decreased polar-structure size were induced in (1-x)NBT-xBaMg_1/3Nb_2/3O₃ ceramics. The permittivity, nevertheless, stays high at ～2273±15 %. Furthermore, the electrical properties become stable in a wide temperature range from 44?396 °C for the sample with x=0.15. In addition, high current density/C_D (450 A/cm²), power density/P_D (23 MW/cm³) and discharge density/W_D (0.57 J/cm³) were realized tested with pulse discharge testing. Our work will provide a development guidance for dielectric energy storage ceramics at low field and high fields with excellent temperature stability.     

Enhanced electrical properties of NaBi modified CaBi2Nb2O9-based Aurivillius piezoceramics via structural distortion

Two-layer structured ferroelectric ceramics, Ca_1-x(NaBi)_0.5xBi₂Nb₂O₉ (x?=?0.0–0.5; CNBN-x), were prepared by solid-state sintering. An artificial pseudo-morphotropic phase boundary was formed by the substitution of Ca with NaBi, and the crystal structure tended to crystallise in the pseudo-tetragonal phase as the increase of NaBi content. Curie temperature (T_c) slightly reduce and remain high value with the increase of NaBi content, which is in the range of 880–935?°C. Moreover, enhanced piezoactivity (d₃₃) and ferroelectricity (P_r) accompanying with decreased dielectric loss can be acquired in NaBi-modified CaBi₂Nb₂O_9. The CNBN-0.1 had the best performance, and its T_c, d₃₃ and P_r was 925?°C, 14.4 pC/N and 6.0 μC/cm², respectively. Thermal annealing measurement exhibited that the piezoelectric properties of Ca_1-x(NaBi)_0.5xBi₂Nb₂O₉ had good temperature stability up to 800?°C. Therefore, the NaBi-modified CaBi₂Nb₂O₉ ceramics are perceived to be of promising candidates for high-temperature applications.     

Enhanced piezoelectric properties and electrical resistivity in W/Cr co-doped CaBi2Nb2O9 high-temperature piezoelectric ceramics

W/Cr co-doped Aurivillius-type CaBi₂Nb_2-x(W_2/3Cr_1/3)_xO₉ (CBN) (x?=?0.025, 0.050, 0.075, 0.100, and 0.150) piezoelectric ceramics were prepared by the conventional solid-state reaction method. The crystal structure, microstructure, dielectric properties, piezoelectric properties, and electrical conductivity of these ceramics were systematically investigated. After optimum W/Cr modification, the CBN ceramics showed both high d₃₃ and T_C. The ceramic with x?=?0.1 showed a remarkably high d₃₃ value of ~15 pC/N along with a high T_C of ~931?°C. Moreover, the ceramic also showed excellent thermal stability evident from the increase in its planar electromechanical coupling factor k_p from 8.14% at room temperature to 11.04% at 600?°C. After annealing at 900?°C for 2?h, the ceramic showed a d₃₃ value of 14?pC/N. Furthermore, at 600?°C, the ceramic also showed a relatively high resistivity of 4.9?×?10⁵ Ω?cm and a low tanδ of 9%. The results demonstrated the potential of the W/Cr co-doped CBN ceramics for high-temperature applications. We also elucidated the mechanism for the enhanced electrical properties of the ceramics.     

Cation distribution of high-performance Mn-substituted ZnGa2O4 microwave dielectric ceramics

In current study, only 5?mol% Mn²⁺ was applied to fabricate high performance microwave dielectric ZnGa₂O₄ ceramics, via a traditional solid state method. The crystal structure, cation distribution and microwave dielectric properties of as-fabricated Mn-substituted ZnGa₂O₄ ceramics were systematically investigated. Mn²⁺-substitution led to a continuous lattice expansion. Raman, EPR and crystal structure refinement analysis suggest that Mn²⁺ preferentially occupies the tetrahedral site and the compounds stay normal-spinel structure. The experimental and theoretical dielectric constant of Zn_1-xMn_xGa₂O₄ ceramics fit well. In all, this magnetic ion, Mn²⁺, could effectively adjust the τ_f value to near zero and double the quality factor from 85,824?GHz to 181,000?GHz of Zn_1-xMn_xGa₂O₄ ceramics at the meantime. Zn_1-xMn_xGa₂O₄ (x?=?0.05) ceramics sintered at 1400?°C for 2?h exhibited excellent microwave dielectric properties, with ε_r =?9.7(@9.85?GHz), Q?×?f?=?181,000?GHz, tanδ?=?5.44?×?10^?5,and τ_f =???12?ppm/°C.     

Evolution of microstructure and electrical properties of Aurivillius phase (CaBi4Ti4O15)1-x(Bi4Ti3O12)x ceramics

(CaBi₄Ti₄O₁₅)_1-x(Bi₄Ti₃O₁₂)_x (CBT-xBIT) Aurivillius phase ceramics were synthesized by the conventional solid reaction method. The evolution of the structure and the electrical properties of CBT-xBIT ceramics were systematically investigated. Due to the enhanced spontaneous polarization induced by internal stresses on the Bi₂O₂ layers in the CBT-xBIT structure, the optimal piezoelectric coefficient (d₃₃ ~ 13?pC/N) was obtained in the ceramics with x?=?0.3 while exhibiting a relatively good thermal stability in the temperature range of 20–700?°C. The dc resistivity (ρ_dc) of the CBT-xBIT ceramics exhibited a higher value (≥?10⁹ Ω?cm) at room temperature, and the tan δ value of CBT-xBIT (x= 0, 0.1 and 0.3) within the temperature range of 20–500?°C maintained stability as a result of the domain structure and point defect concentration in the ceramics. In addition, a distinctive double dielectric peak anomaly was observed in the ε_r-T curves of the CBT-xBIT (x= 0.3, 0.5 and 0.7) ceramics, and it plays a remarkable role in the thermal stability of the piezoelectricity of CBT-xBIT ceramics. As a result, such research can benefit high temperature practical piezoelectric devices.     

Crystal structure,microwave dielectric properties and low temperature sintering of (Al0.5Nb0.5)4+ co-substitution for Ti4+ of LiNb0.6Ti0.5O3 ceramics

The phase composition, microstructure, microwave dielectric properties of (Al_0.5Nb_0.5)⁴⁺ co-substitution for Ti site in LiNb_0.6Ti_0.5O₃ ceramics and the low temperature sintering behaviors of Li₂O-B₂O₃-SiO₂ (LBS) glass were systematically discussed. XRD patterns and EDS analysis result confirmed that single phase of Li_1.075Nb_0.625Ti_0.45O₃ solid solution was formed in all component. The increase of dielectric constant (ε_r) is ascribed to the improvement of bulk density. The restricted growth of grain has a negative influence on quality factor (Q×f) value. The τ_f value could be continuously shifted to near zero as the doping content increases. Great microwave dielectric properties were obtained in LiNb_0.6Ti_(0.5-x)(Al_0.5Nb_0.5)_xO₃ ceramics (x?=?0.10) when sintered at 1100?℃ for 2?h: ε_r =?70.34, Q×f =?5144?GHz, τ_f =?4.8?ppm/℃. The sintering aid, LBS glass, can effectively reduce the temperature and remain satisfied microwave performance. Excellent microwave dielectric properties for x?=?0.10 were obtained with 1.0?wt% glass: ε_r =?70.16, Q×f =?4153?GHz (at 4?GHz), τ_f =?-0.65?ppm/℃ when sintered at 925?℃ for 2?h.