Hard/soft effects of multivalence co-dopants in correlation with their location in PZT ceramics

Piezoelectric hard/soft effects of multivalence co-dopants (Sb and Mn) in correlation with their location in the lattice, were investigated in PZT ceramics, prepared by conventional ceramic technology, with the following compositions: Pb_0.98Sr_0.02 ((Ti_0.49Zr_0.51)_1-0.015-xMn_0.015Sb_x)O₃ with x = 0, 0.005, 0.01, 0.02, 0.03, where antimony was initially assumed to substitute for Ti/Zr ions. The antimony valence state was found to be +3 in all samples by X-ray Photoelectron Spectroscopy investigations. The Electron Paramagnetic Resonance spectra evidenced a steep enhancement of the Mn²⁺ concentration upon increasing antimony doping level, explained by a charge compensation mechanism, between the Sb³⁺ ions substituting Pb²⁺ at the A-sites and the Mn²⁺ ions, localized at the B-sites. The incorporation of Sb³⁺ at the A-site of the PZT lattice is also supported by the variation of the lattice parameters, determined by X-ray Diffraction, with the increasing Sb concentration. The investigation of the dielectric, electromechanical and ferroelectric properties evidenced a hard piezoelectric behavior, mainly attributed to the presence of large sized Mn²⁺ ions, localized at B-sites. Our results prove that the piezoelectric hard/soft response is decisively influenced by the interplay between multiple valence states and locations of the co-dopants, on one hand, and the charge compensation mechanisms, on the other hand. This provides indirect information about the location of some co-dopants which can substitute for both cationic sites in the PZT based ceramics.     

Crystal structures and microwave dielectric properties of low-firing Ca5Zn4-xMgxV6O24 ceramics

Ca₅Zn_4-xMg_xV₆O₂₄ (x?=?0–3) microwave dielectric ceramics with low sintering temperature were synthesized via the conventional solid-state reaction. Effects of the substitution of Mg²⁺ for Zn²⁺ on crystal structures and microwave dielectric properties were investigated. XRD and Rietveld refinement showed the solid solution single phase formed when 0?≤?x?≤?2, but a few ZnO was observed when x?=?3. Meanwhile, the lattice parameters were found to decrease monotonously with Mg content increasing. The vibration modes of Raman were confirmed and the relationship with microwave dielectric properties was analyzed. Appropriate substitution of Mg²⁺ improved the packing fraction, the cation ordering degree, and the Y-site bond valence, contributing to high Q×f and low | τ_f |. However, the ε_r reduced with the increasing content of Mg²⁺ due to the decrease of ion polarizability. Finally, the best microwave dielectric properties were achieved at x?=?2 with ε_r =?11.0, Q?×?f?=?66,365?GHz (at 10.0?GHz), and τ_f =??80.4?ppm/°C.     

Mechanical and thermal expansion studies on Ca0.5Sr0.5Zr4-xTixP6O24 ceramics

Ca_0.5Sr_0.5Zr_4-xTi_xP₆O₂₄ (x?=?0?0.2) ceramics belonging to the NZP family were prepared and dense ceramics with no microcracks were obtained. All of the ceramic samples were still composed of the typical NZP structure with a small amount of Ti⁴⁺ substitution for Zr⁴⁺. The mechanical and thermal expansion properties of the ceramics were characterized and the result showed that the flexural strength monotonically increased to 66.5?MPa. The thermal expansion coefficient varied from 1.8 to 3.4?×?10^?6/°C with Ti⁴⁺ content increasing. Thus, it was clear that the substitution of Ti⁴⁺ for Zr⁴⁺ had obvious effects on the sinterability, mechanical and thermal expansion properties of Ca_0.5Sr_0.5Zr_4-xTi_xP₆O₂₄ ceramics, which were discussed in detail.     

Structure and electrical properties of Ca2+-doped (Na0.47Bi0.47Ba0.06)TiO3 lead-free piezoelectric ceramics

The lead-free piezoelectric ceramics (Na_.47Bi_.47Ba_.06)_1-xCa_xTiO₃ (x?=?0, 0.01, 0.02, 0.03, 0.05, and 0.08, abbreviated as BNBTC/0, BNBTC/1, BNBTC/2, BNBTC/3, BNBTC/5, and BNBTC/8, respectively) were obtained using the solid-state reaction method. The structure, electric conductivity, and dielectric, ferroelectric, and piezoelectric properties of the Ca²⁺-doped (Na_.47Bi_.47Ba_.06)TiO₃ ceramics were thoroughly investigated. The ceramics sintered at 1200?°C exhibit dense microstructures, having relative densities higher than 96%. The X-ray diffraction results demonstrate that all ceramics have a pure perovskite structure. The mean grain sizes of the ceramics are related to the Ca²⁺ quantity. A small quantity of Ca²⁺ ions (x?≤?0.03) improves the piezoelectric and ferroelectric properties of the samples. The dielectric behavior of the samples is sensitive to the Ca²⁺ content and electric poling. The results demonstrate that the electrical properties of the (Na_.47Bi_.47Ba_.06)TiO₃ lead-free ceramics can be well tuned by varying the Ca²⁺ quantity.     

Improved non-ohmic and dielectric properties of Cr3+ doped CaCu3Ti4O12 ceramics prepared by a polymer pyrolysis solution route

CaCu_3-xCr_xTi₄O₁₂ (x?=?0.00–0.20) ceramics were prepared via a polymer pyrolysis solution route. Their dielectric properties were improved by Cr³⁺ doping resulting in an optimal dielectric constant value of 7156 and a low tanδ?value of 0.092 in a sample with x?=?0.08. This might have resulted from a decrease in oxygen vacancies at grain boundaries. XANES spectra confirmed the presence of Cu⁺ ions in all ceramic samples with a decreasing Cu⁺/Cu²⁺ ratio due to an increased content of Cr³⁺ ions. All CaCu_3-xCr_xTi₄O₁₂ ceramics showed nonlinear characteristic with improvement in both the breakdown field (E_b) and its nonlinear coefficient (α). Interestingly, the highest values of α, ～ 114.4, and that of E_b, ～8455.0?±?123.6?V?cm^?1, were obtained in a CaCu_3-xCr_xTi₄O₁₂ sample with x?=?0.08. The improvement of dielectric and nonlinear properties suggests that they originate from a reduction of oxygen vacancies at grain boundaries.     

Effects of (Cr0.5Ta0.5)4+ on structure and microwave dielectric properties of Ca0.61Nd0.26TiO3 ceramics

The Ca_0.61Nd_0.26Ti_1-x(Cr_0.5Ta_0.5)_xO₃ (CNT-CTx) ceramics with orthorhombic perovskite structure were prepared using the conventional solid-state method. The X-ray diffraction (XRD), Raman spectra and X-ray photoelectron spectra (XPS) were employed to investigate the correlations between crystal structure and microwave dielectric properties of CNT-CTx ceramics. The XRD results showed that all CNT-CTx samples were crystallized into the orthorhombic perovskite structure. The SEM micrographs indicated that the average grain size of samples depended on the sintering temperature. As (Cr_0.5Ta_0.5)⁴⁺ concentration increased, there was a significant decrease in the average grain size of samples. The short range order (SRO) structure and structural distortion of oxygen octahedra proved to exist in CNT-CTx crystals according to the analysis of Raman spectra results. The microwave dielectric properties highly depended on the full width at half maximum (FWHM) of Raman spectra, oxygen octahedra distortion, reduction of Ti⁴⁺ to Ti³⁺ and bond valence. At last, the CNT-CT0.05 ceramic sintered at 1420?°C for 4?h exhibited the good and stable comprehensive microwave dielectric properties: relative permittivity of 96.5, quality factor of 14,360?GHz, and temperature coefficient of resonant frequency of +153.3?ppm/°C.     

Investigation on the anti-reduction mechanism of Ti4+ in high dielectric constant system Ca0.9La0.067TiO3 by doping with Al2O3

Ca_0.9La_0.067TiO₃ (abbreviated as CLT) ceramics doped with different amount of Al₂O₃ were prepared via the solid state reaction method. The anti-reduction mechanism of Ti⁴⁺ in CLT ceramics was carefully investigated. X-ray diffraction (XRD) was used to analyze the phase composition and lattice structure. Meanwhile, the Rietveld method was taken to calculate the lattice parameters. X-ray photoelectron spectroscopy (XPS) was employed to study the valence variation of Ti ions in CLT ceramics without and with Al₂O₃. The results showed that Al³⁺ substituted for Ti⁴⁺ to form solid solution and the solid solubility limit of Al³⁺ is near 1.11 mol%. Furthermore, the reduction of Ti⁴⁺ in CLT ceramics was restrained by acceptor doping process and the Q × f values of CLT ceramics were improved significantly. The CLT ceramic doped with 1.11 mol% Al₂O₃ exhibited good microwave dielectric properties: ε_r = 141, Q × f = 6848 GHz, τ_f = 576 ppm/°C.     

Structure,electrical and dielectric properties of Ca substituted BaTiO3 ceramics

BaTi_1-xCa_xO_3-x [BTC100x] ceramics were synthesized via solid-state reaction method. Effect of Ca substitution on the structure, electrical and dielectric properties of BTC100x ceramics was systematically investigated. Calcined BTC100x powders were in tetragonal phase when x?≤?0.01, whereas transformed to cubic at x?>?0.01. Additionally, the diffraction peak (200) shifted to lower angles with increasing x, indicating increased unit cell volume. Meanwhile, Ba_0.97Ca_0.03TiO₃ [BC3T] ceramic was prepared and studied, to compare with BaTi_0.97Ca_0.03O_2.97 (BTC3). It was found that pure BaTiO₃ [BT] and BC3T ceramics had the similar structural and dielectric properties, whereas BTC3 ceramic showed much difference，XRD patterns, Raman spectrum, impedance spectra and dielectric-temperature spectra provided strong evidence of Ca²⁺ substitution at Ti site in BT lattice. Finally, BTC100x ceramics were produced and dielectric properties were investigated. With increasing x, the Curie temperature decreased from 128?°C (BT) to 42?°C (BTC5).     

Correlations between the structural characteristics and enhanced microwave dielectric properties of V–modified Li3Mg2NbO6 ceramics

Novel low-temperature fired Li₃Mg₂Nb_1-xV_xO₆ (x?=?0.02??0.08) microwave dielectric ceramics were synthetized by the partial substitution of V⁵⁺ ions on the Nb⁵⁺ sites. The effects of V⁵⁺ substitution on structure and microwave dielectric properties were investigated in detail. XRD patterns and Rietveld refinement demonstrated that all of the samples exhibited a single orthorhombic structure. The structural characteristics such as the polarizability, packing fraction and NbO₆ octahedron distortion were determined to establish the correlations between the structure and the microwave dielectric characteristics. The ?_r values presented a tendency similar to that of the polarizability. The high Q×f values were mainly attributed to the effects of the grain sizes and density rather than the packing fraction. The variation in the τ_f values was attributed to NbO₆ octahedron distortion. Notably, the Li₃Mg₂Nb_1-xV_xO₆ (x?=?0.02) ceramics sintered at 900?°C had outstanding microwave dielectric properties: ε_r=?16, Q×f=?131,000?GHz (9.63?GHz), and τ_f=???26?ppm/°C, making these ceramics promising ultralow loss candidates for low temperature co-fired ceramics (LTCC) applications.     

Effects of Yb3+ doping on phase structure,thermal conductivity and fracture toughness of (Nd1-xYbx)2Zr2O7

To investigate the effects of Yb³⁺ doping on phase structure, thermal conductivity and fracture toughness of bulk Nd₂Zr₂O₇, a series of (Nd_1-xYb_x)₂Zr₂O₇ (x?=?0, 0.2, 0.4, 0.6, 0.8, 1.0) ceramics were synthesized using a solid-state reaction sintering method at 1600?°C for 10?h. The phase structures were sensitive to the Yb³⁺ content. With increasing doping concentration, a pyrochlore-fluorite transformation of (Nd_1-xYb_x)₂Zr₂O₇ ceramics occurred. Meanwhile, the ordering degree of crystal structure decreased. The substitution mechanism of Yb³⁺ doping was confirmed by analyzing the lattice parameter variation and chemical bond of bulk ceramics. The thermal conductivities of (Nd_1-xYb_x)₂Zr₂O₇ ceramics decreased first and then increased with the increase of Yb³⁺ content. The lowest thermal conductivity of approximately 1.2?W?m^?1 K^?1 at 800?°C was attained at x?=?0.4, around 20% lower than that of pure Nd₂Zr₂O₇. Besides, the fracture toughness reached a maximum value of ~1.59?MPa?m^1/2 at x?=?0.8 but decreased with further increasing Yb³⁺ doping concentration. The mechanism for the change of fracture toughness was discussed to result from the lattice distortion and structure disorder caused by Yb³⁺ doping.     

Structural dependence of microwave dielectric properties in ilmenite-type Mg(Ti1-xNbx)O3 solid solutions by Rietveld refinement and Raman spectra

Mg(Ti_1-xNb_x)O₃ (x = 0–0.09) ceramics were prepared by the conventional solid-state reaction method. The phase composition, sintering characteristics, microstructure and dielectric properties of Ti⁴⁺ replacement by Nb⁵⁺ in the formed solid solution Mg(Ti_1-xNb_x)O₃ (x = 0–0.09) ceramics were systematically studied. The structural variations and influence of Nb⁵⁺ doping in Mg(Ti_1-xNb_x)O₃ were also systematically investigated by X-ray diffraction and Raman spectroscopy, respectively. X-ray diffraction and its Rietveld refinement results confirmed that Mg(Ti_1-xNb_x)O₃ (x = 0–0.09) ceramics crystallised into an ilmenite-type with R-3 (148) space group. The replacement of the low valence Ti⁴⁺ by the high valence Nb⁵⁺ can improve the dielectric properties of Mg(Ti_1-xNb_x)O₃ (x = 0–0.09). This paper also studied the different sintering temperatures for Mg(Ti_1-xNb_x)O₃ (x = 0–0.09) ceramics. The obtained results proved that 1350 °C is the best sintering temperature. The permittivity and Q × f initially increased and then decreased mainly due to the effects of porosity caused by the sintering temperature and the doping amount of Nb₂O₅, respectively. Furthermore, the increased Q × f is correlated to the increase in Ti–O bond strength as confirmed by Raman spectroscopy, and the electrons generated by the oxygen vacancies will be compensated by Nb⁵⁺ to a certain extent to suppress Ti⁴⁺ to Ti³⁺, which was confirmed by XPS. The increase in τ_f from ?47 ppm/°C to ?40.1 ppm/°C is due to the increment in cell polarisability. Another reason for the increased τ_f is the reduction in the distortion degree of the [TiO₆] octahedral, which was also confirmed by Raman spectroscopy. Mg(Ti_0.95Nb_0.05)O₃ ceramics sintered at 1350 °C for 2 h possessed excellent microwave dielectric properties of ε_r = 18.12, Q × f = 163618 GHz and τ_f = ?40.1 ppm/°C.     

Disappearance and recovery of colossal permittivity in (Nb+Mn) co-doped TiO2

We investigate the effects of doping and annealing on the dielectric properties of metal ions doped TiO₂ ceramics. Colossal permittivity (CP) above 10⁴ was observed in single Nb ion doped TiO₂, which was dominated by electron transport related interfacial polarization. Moreover, the CP can be dropped to 120 when simultaneously introducing Mn ion into the sample. The disappearance of CP behaviors maybe due to the multivalence of Mn which would inhibit the reduction of Ti⁴⁺ to Ti³⁺, and thus reduce delocalized electrons. Interestingly, the CP was recovered for the (Nb+Mn) co-doped TiO₂ after post-sintering heat treatment in N₂ atmosphere. The recovery of CP in the sample after annealing can be ascribed to the semiconducting grain and the insulating grain boundary, according to impedance spectroscopy. We therefore believe that this work can help us understand the mechanism of CP from a new perspective.     

Higher permittivity of Ni-doped lead zirconate titanate,Pb[(Zr0.52Ti0.48)(1-x) Nix]O3, ceramics

The paper reports highest obtained dielectric constant for Ni-doped Lead Zirconate Titanate [PZT, Pb(Zr_0.52Ti_0.48)O₃] ceramics. The Ni-doped PZT ceramic pellets were prepared via conventional solid-state reaction method with Ni content chosen in the range 0–20?at%. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy were employed to investigate the crystal structure of the prepared ceramics. The X-ray diffraction analysis indicated that the ceramic pellets had crystallized into tetragonal perovskite structure. A minute displacement of XRD peaks was detected in the diffraction spectra of Ni-doped PZT ceramic samples which when examined by size-strain plot (SSP) method revealed presence of homogenous strain that decreased with increase in concentration of Ni. In FTIR the maximum absorption at 597?cm^?1, 608?cm^?1, 611?cm^?1, 605 and 613?cm^?1 for Ni?=?0, 5, 10, 15 and 20?at%, respectively, confirmed the formation of perovskite structure in all the compositions and the slight shift suggests decrease in cell size on doping. The values of dielectric constant (ε′) & tanδ as a function of frequency and temperature were measured for the prepared ceramics and it revealed highest ever reported dielectric constant for Ni - doped PZT with Ni?=?5?at%. The dielectric variation with temperature exhibited a diffused type ferroelectric–paraelectric phase transition for the doped samples. Also, the maximum dielectric constant value (ε′_max) decreased while the phase transition temperature increased with increase in doping concentration of Ni. The estimated activation energy of different compositions was found to increase from 0.057 to 0.068?eV for x?=?0.00 to x?=?0.20 in ferroelectric phase. The piezoelectric, ferroelectric and magnetic properties were also investigated.     

Composition-dependent xBa(Zr0.2Ti0.8)O3-(1-x)(Ba0.7Ca0.3)TiO3 bulk ceramics for high energy storage applications

This work reports the composition dependent microstructure, dielectric, ferroelectric and energy storage properties, and the phase transitions sequence of lead free xBa(Zr_0.2Ti_0.8)O₃-(1-x)(Ba_0.7Ca_0.3)TiO₃ [xBZT-(1-x)BCT] ceramics, with x?=?0.4, 0.5 and 0.6, prepared by solid state reaction method. The XRD and Raman scattering results confirm the coexistence of rhombohedral and tetragonal phases at room temperature (RT). The temperature dependence of Raman scattering spectra, dielectric permittivity and polarization points a first phase transition from ferroelectric rhombohedral phase to ferroelectric tetragonal phase at a temperature (T_R-T) of 40?°C and a second phase transition from ferroelectric tetragonal phase - paraelectric pseudocubic phase at a temperature (T_T-C) of 110?°C. The dielectric analysis suggests that the phase transition at T_T-C is of diffusive type and the BZT-BCT ceramics are a relaxor type ferroelectric materials. The composition induced variation in the temperature dependence of dielectric losses was correlated with full width half maxima (FWHM) of A₁, E(LO) Raman mode. The saturation polarization (P_s) ≈8.3?μC/cm² and coercive fields ≈2.9?kV/cm were found to be optimum at composition x?=?0.6 and is attributed to grain size effect. It is also shown that BZT-BCT ceramics exhibit a fatigue free response up to 10⁵ cycles. The effect of a.c. electric field amplitude and temperature on energy storage density and storage efficiency is also discussed. The presence of high T_T-C (110?°C), a high dielectric constant (ε_r ≈?12,285) with low dielectric loss (0.03), good polarization (P_s ≈?8.3?μC/cm²) and large recoverable energy density (W?=?121?mJ/cm³) with an energy storage efficiency (η) of 70% at an electric field of 25?kV/cm in 0.6BZT-0.4BCT ceramics make them suitable candidates for energy storage capacitor applications.     

Defect chemistry and dielectric behavior of Sr0.99Ce0.01Ti1−xO3 ceramics with high permittivity

Sr_0.99Ce_0.01Ti_1-xO₃ (SCT, x?=?0, ±?0.0025, ±?0.0050, 0.0075) ceramics were prepared by solid state reaction methods and sintered in air atmosphere at different temperatures, with a soaking time of 2?h. The dielectric properties of all samples presented excellent temperature independence over a broad temperature range from 25 to 330?℃ and frequency independence between 10?kHz and 1?MHz. Sr_0.99Ce_0.01Ti_0.9925O₃ (SCT0.9925) ceramics sintered in air atmosphere exhibited a high permittivity (~5400) and a low dielectric loss (~0.01) measured at room temperature and 1?kHz. XPS and complex impedance spectroscopy analysis confirmed that the high permittivity and low dielectric loss were attributed to the fully ionized oxygen vacancies and giant defect-dipoles in Ti-deficient samples. However, a higher dielectric loss of Ti-rich samples is owing to the destruction of giant defect dipoles, in which highly localized electrons were transformed into hopping electrons.     

MgO-modified Sr0.7Ba0.3Nb2O6 ceramics for energy storage applications

We explored the phase structure, microstructure, dielectric and energy storage properties of MgO-modified strontium barium niobate Sr_0.7Ba_0.3Nb₂O₆-xwt%MgO (SBNMx; x?=?0–5) ceramics fabricated via conventional solid-state sintering precess. X-ray diffraction analysis indicates Mg²⁺ incorporates into lattice at x?=?0.5 and secondary phases come into formation for samples at x?≥?1, which results in the decrease of dielectric constant. There is also significant reduction of dielectric loss up to 0.002. Compared with pure SBN ceramics, the grain size of SBNMx ceramics becomes denser and more uniform, moreover, the dielectric breakdown strength shows increasing trend from 137?kV/cm to 226?kV/cm, which is in favor of the energy storage. SBNM0.5 ceramics presents the optimal energy storage performance: energy storage density of 0.93?J/cm³ and energy storage efficiency of 89.4% at 157?kV/cm, indicating that SBNM ceramics are prospective candidates for high voltage capacitor applications.     

Structural and dielectric properties,and nonlinear electrical response of the CaCu3-xZnxTi4O12 ceramics: Experimental and computational studies

CaCu_3-xZn_xTi₄O₁₂ ceramics (x = 0, 0.05, 0.10) were successfully prepared by a conventional solid-state reaction method. Their structural and dielectric properties, and nonlinear electrical response were systematically inspected. The X-ray diffraction results indicated that single-phase CaCu₃Ti₄O₁₂ (JCPDS no. 75–2188) was obtained in all sintered ceramics. Changes in the lattice parameter are well-matched with the computational result, indicating an occupation of Zn²⁺ doping ions at Cu²⁺ sites. The overall tendency shows that the average grain size decreases when x increases. Due to a decrease in overall grain size, the dielectric permittivity of CaCu_3-xZn_xTi₄O₁₂ decreases expressively. Despite a decrease in the dielectric permittivity, it remains at a high level in the doped ceramics (~3,406–11,441). Besides retention in high dielectric permittivity, the dielectric loss tangent of x = 0.05 and 0.10 (~0.074–0.076) is lower than that of x = 0 (~0.227). A reduction in the dielectric loss tangent in the CaCu_3-xZn_xTi₄O₁₂ ceramics is closely associated with the enhanced grain boundary response. Increases in grain boundary resistance, breakdown electric field, and conduction activation energy of grain boundary as a result of Zn²⁺ substitution are shown to play a crucial role in improved grain boundary response. Furthermore, the XPS analysis shows the existence of Cu⁺/Cu²⁺ and Ti³⁺/Ti⁴⁺, indicating charge compensation due to the loss of oxygen lattice. Based on all results of this work, enhanced dielectric properties of the Zn-doped CCTO can be explained using the internal barrier layer capacitor model.     

Significant reduction of dielectric loss of Ba0.51Sr0.34TiO3 film modified by Y/Mn alternate doping and preheating

To achieve significant reduction of dielectric loss and enhancement of dielectric tunability for actual applications, a Ba_0.51Sr_0.34TiO₃ film modified by Y/Mn alternate doping (Y/Mn-BST_0.85) is prepared by an improved sol-gel method, where the film is composed of 12 layers, and odd number layers are preheated. For comparison, BST_0.85, Y-BST_0.85 and Mn-BST_0.85 films are also prepared. XRD shows four films are ABO₃ cubic perovskite structures. The BST_0.85 film shows the smallest lattice parameter and donor doping because rich Ti⁴⁺ ions enter into A sites to replace some Sr²⁺ and Ba²⁺ ions. Besides the donor doping, three doped BST_0.85 films exhibit slightly larger lattice parameters and acceptor doping because Y³⁺ or Mn²⁺ ions replace some Ti⁴⁺ ions at A sites. The Y/Mn-BST_0.85 film shows the largest lattice parameter and the strongest crystallinity because Y-BST_0.85 layer and Mn-BST_0.85 layer match well in lattice structure. Compared to stoichiometric films, four nonstoichiometric films show markedly decreased dielectric losses. The Y/Mn-BST_0.85 film exhibits the lowest dielectric loss with 0.45 ~ 0.54% under the conditions of ??40 to 40V and 100?kHz, and 0.43 ~ 2.29% under the conditions of 10?Hz ~ 1?GHz and 0?V, thus can satisfy actual applications including tunable microwave application at high frequencies. The related mechanisms are studied by measuring leakage current density, observing AFM and analyzing XPS besides analyzing the XRD patterns.     

Photoluminescence behavior on Sr2+ modified CaCu3Ti4O12 based ceramics

Sr²⁺ modified CaSr_xCu_3-xTi₄O₁₂ceramic powders with x?=?ranging from 0.00 to 3.00 were prepared by solid-state reaction. The effects of Sr²⁺ CCTO powders were evaluated by X-ray diffraction (XRD) with Rietveld refinement revealing a mixture of multiple phases. The Raman spectroscopy analysis pointed out that Sr²⁺ addition produces an emission in the blue region, associated to TiO₆ clusters. Optical properties by means of PL analysis showed emission near to blue region for the samples with x?=?0.00, x?=?0.15, x?=?0.30, corresponding to oxygen vacancies. The emission in the violet region is associated to deep defects while emission in the other samples is linked to shallow defects typical of disordered crystalline structures. Less prominent emission in the green region with the increase of Sr²⁺ corresponds to less self-trapped charges, less interaction between electron and hole, and donor–acceptor recombination.     

Influence of Mn doping on electrical conductivity of lead free BaZrTiO3 perovskite ceramic

Mn doped barium zirconate titanate lead free ceramic with formula BaZr_.045(Mn_xTi_1-x) _.955 O₃ for x?=?0.00, 0.01, 0.02 and 0.03 has been prepared by solid-state reaction method. The single phase tetragonal structure was confirmed by X-ray diffraction (XRD) pattern using Rietveld refinement. Scanning electron microscopy (SEM) shows an inhomogeneous distribution of randomly oriented grains with some voids. Electrical conductivity of Mn doped BZT ceramics was studied using impedance analyzer in the temperature range 493K–673K over wide frequency window. The dispersion behaviour in electrical conductivity obeys Jonscher's double power law for Mn free compound, while it follows single power law for Mn doped compositions. Various parameters viz. dc conductivity (σ_dc), pre-exponential factor (A), frequency exponent (s) and activation energy (E_a) have been estimated by the theoretical fitting of experimental data. The reciprocal temperature dependence of dc conductivity follows the Arrhenius law and specifies thermally activated conduction mechanism. The obtained value of activation energy (E_a) evidences the conduction mechanism is induced by the migration of oxygen vacancies and oxide ions. All samples shows Negative temperature coefficient of resistance (NTCR) and hence exhibit semiconducting behaviour. The environmental friendly lead free ceramic can be exploit to design advanced materials and suitable for the fuel cell electrolyte/electrode applications.