Evolution of microstructure and electrical properties of Aurivillius phase (CaBi4Ti4O15)1-x(Bi4Ti3O12)x ceramics

(CaBi₄Ti₄O₁₅)_1-x(Bi₄Ti₃O₁₂)_x (CBT-xBIT) Aurivillius phase ceramics were synthesized by the conventional solid reaction method. The evolution of the structure and the electrical properties of CBT-xBIT ceramics were systematically investigated. Due to the enhanced spontaneous polarization induced by internal stresses on the Bi₂O₂ layers in the CBT-xBIT structure, the optimal piezoelectric coefficient (d₃₃ ~ 13?pC/N) was obtained in the ceramics with x?=?0.3 while exhibiting a relatively good thermal stability in the temperature range of 20–700?°C. The dc resistivity (ρ_dc) of the CBT-xBIT ceramics exhibited a higher value (≥?10⁹ Ω?cm) at room temperature, and the tan δ value of CBT-xBIT (x= 0, 0.1 and 0.3) within the temperature range of 20–500?°C maintained stability as a result of the domain structure and point defect concentration in the ceramics. In addition, a distinctive double dielectric peak anomaly was observed in the ε_r-T curves of the CBT-xBIT (x= 0.3, 0.5 and 0.7) ceramics, and it plays a remarkable role in the thermal stability of the piezoelectricity of CBT-xBIT ceramics. As a result, such research can benefit high temperature practical piezoelectric devices.     

Crystal structure,microwave dielectric properties and low temperature sintering of (Al0.5Nb0.5)4+ co-substitution for Ti4+ of LiNb0.6Ti0.5O3 ceramics

The phase composition, microstructure, microwave dielectric properties of (Al_0.5Nb_0.5)⁴⁺ co-substitution for Ti site in LiNb_0.6Ti_0.5O₃ ceramics and the low temperature sintering behaviors of Li₂O-B₂O₃-SiO₂ (LBS) glass were systematically discussed. XRD patterns and EDS analysis result confirmed that single phase of Li_1.075Nb_0.625Ti_0.45O₃ solid solution was formed in all component. The increase of dielectric constant (ε_r) is ascribed to the improvement of bulk density. The restricted growth of grain has a negative influence on quality factor (Q×f) value. The τ_f value could be continuously shifted to near zero as the doping content increases. Great microwave dielectric properties were obtained in LiNb_0.6Ti_(0.5-x)(Al_0.5Nb_0.5)_xO₃ ceramics (x?=?0.10) when sintered at 1100?℃ for 2?h: ε_r =?70.34, Q×f =?5144?GHz, τ_f =?4.8?ppm/℃. The sintering aid, LBS glass, can effectively reduce the temperature and remain satisfied microwave performance. Excellent microwave dielectric properties for x?=?0.10 were obtained with 1.0?wt% glass: ε_r =?70.16, Q×f =?4153?GHz (at 4?GHz), τ_f =?-0.65?ppm/℃ when sintered at 925?℃ for 2?h.     

Enhanced dielectric and piezoelectric properties in Na0.5Bi4.5Ti4O15 ceramics with Pr-doping

The bismuth layer-structured Na_0.5Bi_4.5-xPr_xTi₄O₁₅ (x?=?0, 0.1, 0.2, 0.3, 0.4, and 0.5) (NBT-xPr³⁺) ceramics were fabricated using the traditional solid reaction process. The effect of different Pr³⁺ contents on dielectric, ferroelectric and piezoelectric properties of Na_0.5Bi_4.5Ti₄O₁₅ ceramics were investigated. The grain size of Pr³⁺-doping ceramics was found to be smaller than that of pure one, the maximum dielectric constant and Curie temperature T_c gradually decreased with increasing Pr³⁺ contents, and the dielectric loss decreased at high temperature by Pr³⁺-doping. Moreover, the activation energy (E_a), resistivity (Z’), remanent polarization (2P_r) and piezoelectric constant (d₃₃) increased by Pr³⁺-doping. The NBT-xPr³⁺ ceramics with x?=?0.3 achieved the optimal properties with the maximum dielectric constant of 1109.18, minimum loss of 0.00822 (250?kHz), E_a of 1.122?eV, Z’ of 7.9?kΩ?cm (725 ºC), d₃₃ of 18 pC/N, 2P_r of 12.04 μC/cm². The enhancement was due to the addition of Pr³⁺ which suppressed the decreasing of resistivity at high temperature and made it possible for NBT-xPr³⁺ ceramics to be poled in perpendicular direction, implying that it is a great improvement for Na_0.5Bi_4.5Ti₄O₁₅ ceramics in electrical properties.     

Low-temperature sintering and microwave dielectric properties of CaSnxSiO(3+2x)-based positive τf compensator

The sinterability, phase compositions, and microwave dielectric properties of LiF-doped nonstoichiometric CaSn_xSiO_(3+2x) ceramics prepared by the solid-state reaction were investigated. LiF addition effectively reduced the sintering temperature of CaSn_xSiO_(3+2x) ceramics and inhibited the volatilization of Sn. A pure monoclinic CaSnSiO₅ phase was achieved in the 1.0?wt% LiF-doped CaSn_0.94SiO_4.88 ceramics sintered at 1175?°C, which exhibited good microwave dielectric properties of ε_r =?11.6, Q?×?f?=?34000?GHz, and τ_f =?+73.2?ppm/°C. The positive τ_f value was an atypical and important phenomenon for low-permittivity microwave dielectric ceramics, which could be a promising τ_f compensator.     

Cation distribution of high-performance Mn-substituted ZnGa2O4 microwave dielectric ceramics

In current study, only 5?mol% Mn²⁺ was applied to fabricate high performance microwave dielectric ZnGa₂O₄ ceramics, via a traditional solid state method. The crystal structure, cation distribution and microwave dielectric properties of as-fabricated Mn-substituted ZnGa₂O₄ ceramics were systematically investigated. Mn²⁺-substitution led to a continuous lattice expansion. Raman, EPR and crystal structure refinement analysis suggest that Mn²⁺ preferentially occupies the tetrahedral site and the compounds stay normal-spinel structure. The experimental and theoretical dielectric constant of Zn_1-xMn_xGa₂O₄ ceramics fit well. In all, this magnetic ion, Mn²⁺, could effectively adjust the τ_f value to near zero and double the quality factor from 85,824?GHz to 181,000?GHz of Zn_1-xMn_xGa₂O₄ ceramics at the meantime. Zn_1-xMn_xGa₂O₄ (x?=?0.05) ceramics sintered at 1400?°C for 2?h exhibited excellent microwave dielectric properties, with ε_r =?9.7(@9.85?GHz), Q?×?f?=?181,000?GHz, tanδ?=?5.44?×?10^?5,and τ_f =???12?ppm/°C.     

Enhanced electrical properties in Nd and Ce co-doped CaBi4Ti4O15 high temperature piezoceramics

Lead-free piezoelectric material with excellent piezoelectric properties and high Curie temperature is necessary for practical applications. In this work, (Nd, Ce) co-doped CaBi₄Ti₄O₁₅ (CBT) ceramics were prepared by the conventional solid-state reaction technique. The effect of (Nd, Ce) co-doping on the structure and resulting electrical properties of CBT ceramics was systematically investigated. The optimized comprehensive performances were obtained at x?=?0.075 with a large piezoelectric coefficient (19 pC/N), a low dielectric loss (0.073%) and a high Curie temperature (794?°C). More importantly, the ceramic also maintained a very high resistance and a low dielectric loss even at 400?°C (ρ?=?2.5?×?10⁸ Ω?cm, tan δ?=?1.96%) and the d₃₃ showed no sign of waning after annealed at 400?°C, which shows great potential for high temperature piezoelectric device applications. Related mechanisms for the enhancement of electrical properties were discussed.     

High piezoelectric coefficient of Pr2O3-doped Ba0.85Ca0.15Ti0.90Zr0.10O3 ceramics

Pr₂O₃-doped Ba_0.85Ca_0.15Ti_0.90Zr_0.10O₃ (BCTZ-xPr) ceramics were prepared by the conventional solid-state method. A tetragonal phase is only observed in these ceramics, and the introduction of Pr₂O₃ decreases their sintering temperature without affecting negatively the piezoelectric constant. Enhanced ferroelectric properties were obtained in these BCTZ-xPr ceramics. The ceramic with x=0.06 wt% exhibits a good electrical behavior of d₃₃∼460 pC/N, k_p∼47.6%, ε_r∼4638, and tan δ∼0.015 when sintered at a low temperature of ∼1400 °C. As a result, the BCTZ-xPr ceramic is a promising candidate for lead-free piezoelectric ceramics.     

Effects of structural characteristics on microwave dielectric properties of low-loss (Zn1-xNix)ZrNbTaO8 ceramics

Low-loss (Zn_1-xNi_x)ZrNbTaO₈ (0.02?≤?x?≤?0.10) ceramics possessing single wolframite structure are initiatively synthesized by solid-state route. Based on the results of Rietveld refinement, complex chemical bond theory is used to establish the correlation between structural characteristics and microwave performance in this ceramic system. A small amount of Ni²⁺ (x?=?0.06) in A-site with the fixed substitution of Ta⁵⁺ in B-site can effectually raise the Q?×?f value of ZnZrNb₂O₈ ceramic, embodying a dense microstructure and high lattice energy. The dielectric constant and τ_f are mainly affected by bond ionicity and the average octahedral distortion. The (Zn_0.94Ni_0.06)ZrNbTaO₈ ceramic sample sintered at 1150?°C for 3?h exhibits an outstanding combination of microwave dielectric properties: ε_r =?27.88, Q?×?f?=?128,951?GHz, τ_f =?–39.9?ppm/°C. Thus, it is considered to be a candidate material for the communication device applications at high frequency.     

Effect of Eu doping on structure and electrical properties of lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 ceramics

Eu-doped (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ (BNBT6-xEu, x=0.00–2.00 at%) lead-free piezoelectric ceramics have been synthesized by the solution combustion method. The effect of Eu doping concentration on the phase structure, microstructure and electrical properties of BNBT6 ceramics has been investigated. The XRD analysis confirms that the europium additive incorporates into the BNBT6 lattice and results in a phase transition from the coexistence of rhombohedral and tetragonal phases to a more symmetric pseudocubic phase. The SEM images indicate that the europium additive has little effect on the ceramic microstructure and the average grain size is about 2.0 μm. The electrical properties of BNBT6 ceramics can be improved by appropriate Eu doping. The 0.25 at% Eu doped BNBT6 ceramic presents excellent electrical properties: piezoelectric constant d₃₃=149 pC/N, remnant polarization P_r=40.27 μC/cm², coercive field E_c=2.95 kV/mm, dielectric constant ε_r=1658 and dissipation factor tan δ=0.0557 (10 kHz).     

Tailored electrical properties in ternary BiScO3-PbTiO3 ceramics by composition modification

Ternary 0.99(0.36BiScO₃-0.64PbTiO₃)-0.01Bi(M₁M₂)_0.5O₃ (BS-PT-BM₁M₂) ceramics were prepared by the solid-state reaction method, where M₁ and M₂ respectively stand for bivalent and quadrivalent elements (M₁=Sn, Pb, Ni, Sr, Ba, Ca, Cu, Mg and Mn, M₂ = Hf, Sn, Zr, Si, Ce and Mn). Effects of different elements on their structure and electrical properties were studied in detail. It was found that the formation of MPB by optimizing the doped elements can enhance electrical properties (d₃₃ = 500 pC/N, ?_r = 2013, tan δ = 0.024 at 100?kHz). Interestingly, different electrical properties can be induced by choosing the doped elements. For example, a high d₃₃ can be realized by doping M₁ = Sn, Pb or Sr (M₂ = Ti) as well as M₂ = Hf, Sn or Zr (M₁ = Zn), and the dielectric loss can be suppressed by doping Ce or Mn. In addition, large bipolar strain (S = 0.25–0.46%) as well as high remanent polarization (P_r = 34.7–46.4?µC/cm²) can be observed for all doped elements, which were superior to pure BS-PT (P_r = 32?µC/cm² and S = 0.18%), and high T_C (T_C = 417–443?°C) can be attained in all the ceramics. We believe that the addition of ABO₃-type compounds with optimum elements can enhance electrical properties of BS-PT ceramics.     

High energy storage performance of [(Bi0.5Na0.5)0.94Ba0.06]0.97La0.03Ti1-x(Al0.5Nb0.5)xO3 ceramics with enhanced dielectric breakdown strength

Novel lead-free [(Bi_0.5Na_0.5)_0.94Ba_0.06]_0.97La_0.03Ti_1-x(Al_0.5Nb_0.5)_xO₃ ceramics (BNBLT-xAN) were prepared by the conventional solid state sintering method. The dielectric, ferroelectric, ac impedance and energy-storage performance were systematically investigated. Temperature dependent permittivity curves showed that relaxation properties of sintered ceramics gradually diminished with the increase of AN. The introduction of AN gave rise to a slimmer polarization hysteresis loop (P-E) and an enhanced dielectric breakdown strength (DBS). Therefore, the optimum energy-storage performance were realized at x?=?0.05 with the energy-storage density (W_rec) of 1.72?J/cm³ and energy-storage efficiency (η) of 85.6% at 105?kV/cm, accompanied with the excellent temperature stability and fatigue performance. The results demonstrated that BNBLT-xAN system was a promising lead-free candidate for energy-storage applications.     

Effect of HfO2 content on the microstructure and piezoelectric properties of (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics

(Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃–xHfO₂ [BNBT–xHfO₂] lead-free ceramics were prepared using the conventional solid-state reaction method. Effects of HfO₂ content on their microstructures and electrical properties were systematically studied. A pure perovskite phase was observed in all the ceramics with x=0–0.07 wt%. Adding optimum HfO₂ content can induce dense microstructures and improve their piezoelectric properties, and a high depolarization temperature was also obtained. The ceramics with x=0.03 wt% possess optimum electrical properties (i.e., d₃₃~168 pC/N, k_p~32.1%, Q_m~130, ε_r~715, tan δ~0.026, and T_d~106 °C, showing that HfO₂-modified BNBT ceramics are promising materials for piezoelectric applications.     

Sintering and electrical properties of La-modified (Na0.52K0.45Li0.03)1−3xLax(Nb0.88Sb0.09Ta0.03)O3 lead-free ceramics

(Na_0.52K_0.45Li_0.03)_1−3xLa_x(Nb_0.88Sb_0.09Ta_0.03)O₃ (NKLL_xNST) lead-free ceramics were prepared by normal sintering and their dielectric and piezoelectric properties were investigated. The X-ray methods indicate that the NKLL_xNST ceramics with x≤0.003 present a pure perovskite phase at room temperature. The bulk density of NKLL_xNST ceramics increases with proper amount of La₂O₃ contents, and reaches its highest value of 4.544 g/cm³ with the addition of 0.3 mol% La₂O₃. At x=0.003, remnant polarization P_r, piezoelectric constant d₃₃ and planar mode electromechanical coupling factor k_p of NKLL_xNST ceramics reach the highest values of 37.80 μC/cm², 346 pC/N and 40%, respectively, exhibiting excellent “soft” piezoelectric characteristics, demonstrating a tremendous potential of the compositions studied for device applications.     

The effect of pre-annealing on the microstructure of (K,Na)NbO3 ceramics

The effects of pre-annealing on the microstructure development and piezoelectric properties for 0.95(K_0.5Na_0.5)NbO₃–0.05LiSbO₃ (0.95KNN–0.05LS) ceramics were investigated. The pre-annealing suppressed the abnormal grain growth in both the undoped and Mn-doped 0.95KNN–0.05LS ceramics. The pre-annealed samples possessed smaller abnormal grains, larger matrix grains, and a broader grain size distribution compared to the samples sintered without a pre-annealing step. The pre-annealed samples presented better dielectric and piezoelectric properties, a larger dielectric constant (ε_r) and electromechanical coupling factor (k_p), and a smaller dielectric loss factor (tan δ).     

High energy-storage properties of [(Bi1/2Na1/2)0.94 Ba0.06] La(1−x) ZrxTiO3 lead-free anti-ferroelectric ceramics

Energy-storage properties of [(Bi_1/2Na_1/2)_0.94Ba_0.06]La_(1−x)Zr_xTiO₃ (BNT-BLZT, x=0, 0.02, 0.04, and 0.06) lead-free anti-ferroelectric ceramics fabricated via the conventional sintering technique were first investigated. Calculation from the X-ray diffraction results reveals that BNT-BLZT ceramic possesses a single perovskite structure phase. In addition, the P–E hysteresis loops measured at room temperature show that the BNT-BLZT (x=0.02) ceramics obtain the maximum P value of 37.5 μC/cm² and the largest energy-storage density W_max is 1.58 J/cm³. The temperature dependence of dielectric permittivity ε_r and dielectric loss tanδ illustrate that the addition of Zr can improve the piezoelectric properties of BT-BLZT ceramics. These properties indicate that BNT-BLZT ceramics might be a promising lead-free anti-ferroelectric material for energy storage application.     

Enhanced ferroelectric,magnetic and magnetoelectric properties of multiferroic BiFeO3–BaTiO3–LaFeO3 ceramics

A lead–free multiferroic ceramic 0.7BiFeO₃–0.3BaTiO₃ showed strong ferroelectric and piezoelectric properties, but weak magnetic and magnetoelectric properties. We herein expected that the electrical and magnetic properties of 0.7BiFeO₃–0.3BaTiO₃ ceramics could be enhanced by introducing LaFeO₃. (0.7–x) BiFeO₃–0.3BaTiO₃–xLaFeO₃ (x?=?0–0.2) were synthesized by solid-state reaction. All the ceramics formed a perovskite structure, and a morphotropic phase boundary (MPB) between rhombohedral and orthorhombic phases formed at x?=?0.025. The ceramics with MPB composition had high unipolar strain (S_max = 0.14%), piezoelectricity (d₃₃ = 223 pC/N, d₃₃ * = 350?pm/V), ferroelectricity (P_r = 25.67 mC/cm²) and magnetoelectricity (a_ME = 466.6?mV/cm·Oe), which can be attributed to addition of La ions. The improved phase angle also demonstrated augmentation of ferroelectricity on the microscopic view. The ferromagnetism was evidently improved after LaFeO₃ doping, and the remanent magnetization M_r increased from 0.0207 to 0.0622?emu/g with rising x from 0 to 0.075. In conclusion, with strong magnetoelectric properties, the prepared ceramics may be applicable as promising lead–free multiferroic ceramic materials for novel electronic devices.     

Remarkable piezoelectricity and stable high‐temperature dielectric properties of quenched BiFeO3–BaTiO3 ceramics

Effects of quenching process on dielectric, ferroelectric, and piezoelectric properties of 0.71BiFeO₃?0.29BaTiO₃ ceramics with Mn modification (BF–BT?xmol%Mn) were investigated. The dielectric, ferroelectric, and piezoelectric properties of BF–BT?xmol%Mn were improved by quenching, especially to the BF–BT?0.3 mol%Mn ceramics. The dielectric loss tanδ of quenched BF–BT?0.3 mol%Mn ceramics was only 0.28 at 500°C, which was half of the slow cooling one. Meanwhile, the remnant polarization P_r of quenched BF–BT?0.3 mol%Mn ceramics increased to 21 μC/cm². It was notable that the piezoelectric constant d₃₃ of quenched BF–BT?0.3 mol%Mn ceramics reached up to 191 pC/N, while the T_C was 530°C, showing excellent compatible properties. The BF–BT?xmol%Mn system ceramics showed to obey the Rayleigh law within suitable field regions. The Rayleigh law results indicated that the extrinsic contributions to the dielectric and piezoelectric responses of quenched BF–BT?xmol%Mn ceramics were larger than the unquenched ceramics. These results presented that the quenched BF–BT?xmol%Mn ceramics were promising candidates for high‐temperature piezoelectric devices.     

Composite microstructures and piezoelectric properties in tantalum substituted lead-free K0.5Na0.5Nb1-xTaxO3 ceramics

K_0.5Na_0.5Nb_1-xTa_xO₃ (KNNT) (with x?=?0.00, 0.05, 0.10, 0.20, 0.30, 0.50 and 1) ceramics are prepared by ball milling and two calcinations at 830?°C for 5?h. Subsequent sintering of centimeter size pellets, 1–2?mm thick, is studied using conventional and spark plasma sintering techniques with various conditions. X-Ray diffraction and Raman spectroscopy phase identification reveal orthorhombic to tetragonal phase transitions occurring at about x?=?0.50, associated to chemical disorder. Scanning electron microscope observations and associated energy dispersive X-ray spectroscopy analysis reveal some composite aspect of the ceramics. Substitution of niobium by tantalum, corresponding to x increase, decreases significantly the grain size but also the densification of the ceramics sintered by conventional sintering, while, enhancement of the piezoelectric properties is observed for both sintering techniques. Thanks to parameters optimization of the spark plasma sintering process, temperature-time-pressure, significant improvement of the relative density over 96%, is obtained for all the compositions sintered between 920 and 960?°C, under 50?MPa, for 5–10?min with heating rates of 100?°C/min. High relative permittivity (ε_r =?1027), piezoelectric charge coefficient (d₃₃ =?160 pC/N) and piezoelectric coupling factor (k_p =?46%) are obtained in spark plasma sintered K_0.5Na_0.5Nb_1-xTa_xO₃ composite ceramics, for x ranging between 0.10 and 0.30 and for some specific spark plasma sintering conditions. Thus, tantalum single element substitution on niobium site, combined with spark plasma sintering, is revealed to be a powerful combination for the optimization and the reliability of piezoelectric properties in KNN system.     

Structural,dielectric, piezoelectric,ferroelectric and electro-caloric properties of Ba1−xCaxTi0.975(Nb0.5Yb0.5)0.025O3 lead-free ceramics

Polycrystalline samples of Ba_1?xCa_xTi_0.975(Nb_0.5Yb_0.5)_0.025O₃ (where x = 0.15, 0.2 and 0.3, abbreviated as BCTYN) were prepared by the conventional solid state reaction method. The effect of calcium (Ca) substitution in BaTi_0.975(Nb_0.5Yb_0.5)_0.025O₃ (abbreviated as BTYN25) on the structural, dielectric, piezoelectric and ferroelectric properties and electro-caloric effects (ECE) was investigated. X-ray diffraction (XRD) results at room temperature showed that the BCTYN samples in the composition x < 0.3 exhibited a pure tetragonal perovskite structure. Dielectric measurements showed a classical ferroelectric behavior for all samples. With the increase of the Ca content, the Curie temperature (T_C) was still maintained with a small shift towards low temperature. The evolution of the Raman spectra was studied as a function of compositions and temperatures. The Raman bands confirmed the structure and the phase transition of the BCTYN ceramics. By adding Ca, the piezoelectric properties and the remanent polarization (P_r) are relatively maintained for the compositions x = 0.15 and x = 0.2. A piezoelectric coefficient of d₃₃ = 130 pC/N and a planar electromechanical coupling factor of k_p = 28% were obtained for these compositions. Two different methods were used to calculate the electro-caloric coefficients of the BCTYN ceramics. The incorporation of Ca was found to enhance the electro-caloric strength (ξ = ΔT/ΔE) within a broad temperature range with a best value of ξ = 0.2?Kmm/kV for x = 0.2.