Enhanced high-temperature dielectric properties and microwave absorption of SiC nanofibers modified Si3N4 ceramics within the gigahertz range

Si₃N₄ ceramics modified with SiC nanofibers were prepared by gel casting aiming to enhance the dielectric and microwave absorption properties at temperatures ranging from 25?°C to 800?°C within X-band (8.2–12.4?GHz). The results indicate that the complex permittivity and dielectric loss are significantly increased with increased weight fraction of SiC nanofibers in the Si₃N₄ ceramics. Meanwhile, both complex permittivity and dielectric loss of SiC nanofibers modified Si₃N₄ ceramics are obviously temperature-dependent, and increase with the higher test temperatures. Increased charges mobility along conducting paths made of self-interconnected SiC nanofibers together with multi-scale net-shaped structure composed of SiC nanofibers, Si₃N₄ grains and micro-pores are the main reason for these enhancements in dielectric properties. Moreover, the calculated microwave absorption demonstrates that much enhanced microwave attenuation abilities can be achieved in the SiC nanofibers modified Si₃N₄ ceramics, and temperature has positive effects on the microwave absorption performance. The SiC nanofibers modified Si₃N₄ ceramics will be promising candidates as microwave absorbing materials for high-temperature applications.     

Laser surface nanostructuring for reliable Si3N4/Si3N4 and Si3N4/Invar joined components

IR pulsed laser radiation in air was applied to Si₃N₄ and Invar to obtain reliable Si₃N₄/Si₃N₄ and Si₃N₄/Invar adhesive bonded components. The laser pre-treatment produced a homogeneous nanostructured oxide layer on the surfaces, which effectively increased the adhesion at the adhesive/adherends interface and led to cohesive failure in the joining material. The mechanical strength of Si₃N₄/ Si₃N₄ and Si₃N₄/Invar joined components was measured, with and without laser nanostructuring, before and after thermal cycling from room temperature to 50?K, and it resulted that the exposure to extremely low temperatures did not affect the mechanical integrity of the joints. It was also demonstrated that this laser pre-treatment did not alter the mechanical properties of the ceramic substrate.     

Formation mechanism of elongated β–Si3N4 crystals in Fe–Si3N4 composite via flash combustion

Elongated β–Si₃N₄ crystals have a significant influence on the mechanical property of Fe–Si₃N₄ composite. In this paper, the formation mechanism of elongated β–Si₃N₄ crystals in Fe–Si₃N₄ composite was investigated. During the preparation process, β–Si₃N₄ crystals developed in a spiral and layer growth mechanism in the dense areas. They kept growing from the dense areas and formed radially distributed elongated crystals with hexagonal prismatic morphology as time went on. As for the formation mechanism, the (100) crystal plane of β–Si₃N₄ from Si-N-O melt is mainly the vicinal crystal planes growth with different angles from the (100) crystal plane. At the later stage, the crystallization and the diffusion forces in Si-N-O molten phase decreased. However, the short range diffusion remained active and resulted in the gradient distribution of N content near the boundary. With the temperature decreasing, the disappearance of the short range diffusion implied the end of the crystallization process of the elongated β–Si₃N₄ crystals.     

Joining of Si3N4/Si3N4 with in-situ formed Si-Al-Yb oxynitride glasses interlayer

Si₃N₄ ceramic was successfully joined to itself with in-situ formed Yb-Si-Al oxynitride glass interlayer. The joints were composed of three parts: (I) Si₃N₄ matrix, (II) oxynitride glass interlayer in which hexagonal or fine elongated β-sialon grains and a few ball-like β-Si₃N₄ grains exist, and (III) diffusion zone in Si₃N₄ matrix containing a thin dark layer and a ~ 25?µm thick bright layer. The seam owned similar microstructure to matrix and was inosculated with the matrix as a whole. The strength of the joint tended to increase with the increase of bonding temperature and reached the value of 225?MPa, when the joints were prepared at 1600?°C for 30?min under a pressure of 1.5?MPa. The high-temperature strength remained 94.7% and 75.2% of R.T. strength when the joints were tested at 1000?°C and 1200?°C, respectively. It may be contributed to the high softening temperature of the Yb-Si-Al oxynitride glass phase formed in the seam. Even suffered to the air exposure for 10?h at 1200?°C, the residual strength of the joints was still 143?MPa, attributed to the existence of YbAG phase.     

Combined effect of Fe-Si alloys and carbon on Si3N4 stability at elevated temperatures

The combined effect of carbon and Fe-Si alloys on Si₃N₄ was explored by heat treating Si₃N₄ materials at 1500?°C and 1600?°C in flowing nitrogen. The phase compositions and microstructures were characterized by XRD and SEM, respectively. The reaction degree was analysed based on the mass variation in the system. Combined with a thermodynamic assessment, the reaction mechanism was studied and proposed. The results show that the coexistence of Fe-Si alloys and carbon accelerates the phase transformation from Si₃N₄ to SiC and worsens the strength of Si₃N₄ materials. Fe-Si alloys accelerate the deposition of CO gas to free carbon and accelerate the decomposition of Si₃N₄ to Si. The in situ-formed Si can react with carbon, thus accelerating the thermodynamic and kinetic formation of SiC. Along with the growth of pores and the deterioration of the wettability of Fe-Si alloys during this process, the microstructure changes from a network constituted by Si₃N₄ columns/whiskers to porous SiC particles with weak linkages, which leads to the failure of Si₃N₄ materials. Therefore, the combined effect of Fe-Si alloys and carbon is harmful for Si₃N₄ materials at 1500–1600?°C.     

Dielectric and mechanical properties of porous Si3N4 ceramics prepared via low temperature sintering

Borophosphosilicate bonded porous silicon nitride (Si₃N₄) ceramics were fabricated in air using a conventional ceramic process. The porous Si₃N₄ ceramics sintered at 1000–1200 °C shows a relatively high flexural strength and good dielectric properties. The influence of the sintering temperature and contents of additives on the flexural strength and dielectric properties of porous Si₃N₄ ceramics were investigated. Porous Si₃N₄ ceramics with a porosity of 30–55%, flexural strength of 40–130 MPa, as well as low dielectric constant of 3.5–4.6 were obtained.     

High temperature mechanical properties of porous Si3N4 prepared via SRBSN

The high temperature strength and fracture behavior of porous Si₃N₄ ceramics prepared via reaction bonded Si₃N₄ (RBSN) and sintered reaction bonded Si₃N₄ (SRBSN) were investigated at 800–1400?°C. The weight gain after oxidation for 15?min and the microstructure of the edge and center of the fracture surface clearly show that the internal oxidation of porous SRBSN is unavoidable with porosity of ~ 50% and mean pore size of 700?nm. The oxidation of Si₃N₄ and intergranular Y₂Si₃O₃N₄ phase may responsible for the high temperature strength degradation of SRBSN. Porous Si₃N₄ ceramics prepared with addition of 1?wt% C showed low strength degradation at temperature >?1200?°C.     

Preparation and characterization of porous Si3N4-bonded SiC ceramics and morphology change mechanism of Si3N4 whiskers

Porous Si₃N₄-bonded SiC ceramics with high porosity were prepared by the reaction-sintering method. In this process, Si₃N₄ was synthesized by the nitridation of silicon powder. The X-ray diffraction (XRD) indicated that the main phases of the porous Si₃N₄-bonded SiC ceramics were SiC, α-Si₃N₄, and β-Si₃N₄, respectively. The contents of β-Si₃N₄ were increased following the sintering temperature. The morphology of Si₃N₄ whiskers was investigated by scanning electron microscope (SEM), which was shown that the needle-like (low sintering-temperature) and rod-like (higher sintering-temperature) whiskers were formed, respectively. From low to high synthesized temperature, the highest porosity of the porous Si₃N₄ bonded SiC ceramic was up to 46.7%, and the bending strength was ~11.6?MPa. The α-Si₃N₄ whiskers were derived from the reaction between N₂ and Si powders, the growth mechanism was proved by Vapor–Solid (VS). Meanwhile, the growth mechanism of β-Si₃N₄ was in accordance with Vapor–Solid–Liquid (VSL) growth mechanism. With the increase of sintering temperature, Si powders were melted to liquid silicon and the α-Si₃N₄ was dissolved into the liquid then the β-Si₃N₄ was precipitated successfully.     

Porous (SiCw-Si3N4w)/(Si3N4-SiC) composite with enhanced mechanical performance fabricated by 3D printing

SiC whisker and Si₃N₄ whisker-reinforced Si₃N₄-SiC ((SiC_w-Si₃N_4w)/(Si₃N₄-SiC)) composite was synthesized by 3D printing for the first time, by the combination of printed-Si-body nitridation and chemical vapor infiltration-SiC methods. The mechanical properties of the composite could be optimized through the adjustment of SiC_w content and load direction. A SiC_w content of 3?wt% was found to be the optimal scheme, and accordingly, the average bulk density increased by 22.4%, the bending strength increased by 63.6%, the compressive strength parallel to the printing layer increased by 404.8%, and the compressive strength perpendicular to the printing layer increased by 157.1%, compared with the bulks without whiskers. The enhanced mechanical performance was mainly attributed to the process of densification by CVI, and the effect of the homogeneous whiskers bridging, pull-out and deflecting crack to expend energy. The achieved indices meet the requirements for 3D-printed porous ceramic matrix composite targeted for commercial and military field applications.     

Fabrication and wear behaviors of graded Si3N4 ceramics by the combination of two-step sintering and β-Si3N4 seeds

Graded Si₃N₄ ceramics with sandwich-like microstructure were fabricated by the combination of hot-pressing, spark plasma sintering and β-Si₃N₄ seeds. Phase compositions, microstructures, mechanical properties, and wear behaviors were investigated. Main α-Si₃N₄ phase were detected in the outer layers, and only β-Si₃N₄ phase were observed in the inner layers. The outer layer with ultra-fine equiaxed grains were well bonded to the inner layer with a distinct bimodal grain size distribution. Vickers hardness of outer layer (～21.2?GPa) was much higher than that of inner layer (～16.1?GPa), whereas fracture toughness of outer layer (～3.5?MPa?m^1/2) was much lower than that of inner layer (～5.9?MPa?m^1/2), indicative of the hard surface and tough core. Due to the ultra-fine microstructure and high hardness of outer layer, the graded Si₃N₄ ceramics exhibited superior wear resistance with low wear rate.     

Microstructure,high-temperature mechanical and dielectric properties of novel Si3N4 f/SiNO wave-transparent composites

Continuous Si₃N₄ fiber reinforced SiNO matrix composites (Si₃N_4 f/SiNO composites) were innovatively prepared for long-time high-temperature resistant wave-transparent materials of hypersonic aircraft. The microstructure, high-temperature mechanical and dielectric properties of Si₃N_4 f/SiNO composites were investigated in detail. The as-fabricated Si₃N_4 f/SiNO composites have homogeneous SiNO matrix distribution for the special winding process, which is beneficial for the mechanical strength and wave-transparent properties. The average tensile strength and flexural strength at room temperature is 87.8 MPa and 171.2 MPa respectively, which suggests Si₃N_4 f/SiNO composites have excellent mechanical strength. The tensile strength value decreases to 54.6 MPa after heat-treated at 1000 ℃ for the surface reactions between the SiNO matrix and Si₃N₄ fibers. After heat-treated at 1550 ℃, the composites have the tensile strength value of 24.2 MPa for the high strength retention rate of Si₃N₄ fibers at this temperature. Si₃N_4 f/SiNO composites have excellent room temperature dielectric properties and excellent dielectric stability in different frequency bands (7–18 GHz). The dielectric constant values vary from 3.69 to 3.75 while the dielectric loss attains the order of 10^?3. The dielectric constants and dielectric loss of Si₃N_4 f/SiNO composites are relatively stable from RT to 800 ℃. The as-fabricated Si₃N_4 f/SiNO composites that have excellent high temperature resistance and dielectric properties are the ideal high temperature wave-transparent composites.     

Diamond coating of coloured Si3N4 ceramics

The effect of Si₃N₄ secondary phases on chemical vapour deposition (CVD) diamond film growth was analyzed. Silicon nitride substrates were obtained by pressureless sintering, placing the green samples inside a powder bed of Si₃N₄/BN. Local variations in the sintering atmosphere led to samples with different grey colouration as well as chemical and physical characteristics, determined by X-ray diffraction and thermal conductivity tests, which affected the diamond film growth. A complete characterization of the films, including thickness, average crystal size, surface roughness, texture and adhesion, was done. The Si₃N₄ substrate with glassier phase gave thicker diamond films, with smaller crystal sizes and better film adhesion to the substrate than the diamond films grown on ceramic substrates with less vitreous phase.     

Selective growth of horizontally-oriented carbon nanotube bridges on patterned silicon wafers by electroless plating Ni catalysts

The main purpose of this research was to develop an Integrated Circuit compatible process to grow the horizontally-oriented carbon nanotubes (CNTs) across the trenches of the patterned Si wafer, which was produced by conventional photolithography technique. The selectivity of the process is based on the difference in electrical conductivity between amorphous silicon (a:Si) and silicon nitride (Si₃N₄), where the catalyst can be much easier deposited by electroless plating on the a:Si part of the pattern. The selectivity is also based on greater chemical reactivity of the catalyst with a:Si to form silicides, instead of with Si₃N₄. Furthermore, the Si₃N₄ barrier layer of the pattern was designed on top of the a:Si layer to guide the growth of CNTs in horizontal direction to bridge the trenches of the pattern. The as-deposited catalysts were examined by Auger electron spectroscopy (AES). The catalyst-coated pattern was pretreated in hydrogen plasma and followed by CNT growth in a microwave plasma chemical vapor deposition (MPCVD) system. The CNT bridges were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution TEM (HRTEM), and I–V measurements. Under the present deposition conditions, TEM and HRTEM examinations indicate that the deposited nanostructures are bamboo-like multiwalled carbon nanotubes (MWNTs) with a wall thickness of 2030 graphene layers. Electrical conductivity of the as-deposited MWNTs can be greatly improved by subjecting to 760 °C heat treatment under nitrogen atmosphere. The results demonstrate that the amounts of CNTs and bridges are tunable with the Ni catalyst plating time. Under the present experimental configuration and at a catalyst plating time of 20 s, countable numbers of bridges can be obtained, which are selectively and horizontally grown on the areas of the pattern with Ni catalyst. This process can be a step approaching the application of CNTs in electronic devices.     

Bilayered coatings of BN/diamond grown on Si3N4 ceramic substrates

Cubic boron nitride (c-BN) is a well known material to be used in machining of ferrous metallic alloys, namely as a coating. However, in most practical cases, there is a lack of adhesion to the substrate material. In this work, BN coatings were deposited by magnetron sputtering on silicon nitride (Si₃N₄) ceramic substrates using an intermediate layer of CVD microcrystalline (MCD) or nanocrystalline diamond (NCD). The goal was to improve the c-BN content by using diamond interlayers, and to optimize film adhesion to the substrate by employing such ceramic, which is known to provide very high adhesion strength to CVD diamond. The BN/NCD/Si₃N₄ combination demonstrated to be unique regarding the absence of delamination at both the BN/diamond and diamond/substrate interfaces, also providing the highest c-BN phase content.     

Preparation of Si3N4 porous ceramics via foam-gelcasting and microwave-nitridation method

Si₃N₄ porous ceramics with improved mechanical strength were fabricated for the first time by a combined foam-gelcasting and microwave-nitridation method at 1273–1373?K. The Si₃N₄ porous samples prepared at 1373?K/20?min with the porosity of 68.9% had respectively flexural and compressive strength as high as 8.1 and 20.8?MPa, which values were comparable or even superior to those of Si₃N₄ porous ceramics prepared previously by the conventional heating technique at a much higher temperature of 1773–1973?K, indicating that present preparation strategy is feasible to prepare high quality Si₃N₄ porous ceramic at a much milder condition. Moreover, the thermal conductivity of as-prepared Si₃N₄ porous ceramics at 1073?K was as low as 1.697?W/(m?K), suggesting it could be a potentially good heat insulating material for aluminum electrolyte cells.     

Microstructure and mechanical properties of Si3N4f/Si3N4 composites with different coatings

The Si₃N₄ coating and Si₃N₄ coating with Si₃N₄ whiskers as reinforcement (Si₃N_4w-Si₃N₄) were prepared by chemical vapor deposition (CVD) on two-dimensional silicon nitride fiber reinforced silicon nitride ceramic matrix composites (2D Si₃N_4f/Si₃N₄ composites). The effects of process parameters of as-prepared coating including the preparation temperature and volume fraction of Si₃N_4w on the microstructure and mechanical properties of the composites were investigated. Compared with Si₃N₄ coating, Si₃N_4w-Si₃N₄ coating shows more significant effect on the strength and toughness of the composites, and both strengthening and toughening mechanism were analyzed.     

RF MEMS capacitive switch with leaky nanodiamond dielectric film

RF MEMS capacitive switches using leaky nanodiamond as a dielectric film are studied and compared with those using Si₃N₄. Characteristics of dielectric charging and discharging are analyzed at temperature ranging from − 196 °C to 150 °C. Electrical resistivity of leaky nanodiamond is measured to be lower than that of Si₃N₄ by 3 to 6 orders of magnitude at room temperature. Trapped charges in leaky nanodiamond dielectric discharge much more quickly than those in Si₃N₄ while the power dissipation of nanodiamond based switches remains low. As a result, charge trapping induced shift in electrostatic actuation voltage is greatly reduced compared to that with Si₃N₄ and becomes non-detectable under the reported conditions. RF MEMS capacitive switches based on leaky nanodiamond dielectric are, therefore, more reliable than those with Si₃N₄.     

A non-sintering fabrication method for porous Si3N4 ceramics via sol hydrothermal process

A non-sintering fabrication method for porous Si₃N₄ ceramics with high porosity and high mechanical strength was proposed. Strength of the porous ceramics can be obtained by silica sol mass transfer process in hydrothermal conditions rather than a traditionally controlled high temperature sintering process. Under hydrothermal circumstances, silica sol is continuously transferred to the necks of Si₄N₃ powder compact, depositing there and thus consolidating the ceramic skeleton. The key of the method to obtain homogeneous microstructure and mechanical strength is how to keep the silica sol from gelatin during hydrothermal procedure. The stabilization of silica sol and its affecting factors were studied. The results indicated that ultrasonic treatment makes alkali-catalyzed silica sol remain stable even in 200?℃ hydrothermal condition, which insures consecutive silica transportation. The effect of hydrothermal time on open porosity/mechanical strength of the porous Si₄N₃ ceramics were also thoroughly investigated. The porous Si₄N₃ ceramics with open porosity above 42% and flexural strength of 45?MPa were obtained without any high temperature sintering process. This method can be widely employed for the preparation of other porous ceramics as well.     

Fabrication of Si3N4–SiBC composite ceramic and its excellent electromagnetic properties

To obtain better electromagnetic wave absorbing property, it is vitally necessary to develop novel ceramics with not only high dielectric loss but also low dielectric constant. Si₃N₄–SiBC, a composite ceramic with such dielectric properties, was fabricated by infiltrating SiBC into porous Si₃N₄ ceramic via low pressure chemical vapor infiltration. The high dielectric loss and the low dielectric constant are attributed to the unique microstructure of SiBC, which also leads to a very excellent wave-absorbing property of Si₃N₄–SiBC ceramic, attaining a minimal reflection coefficient of ?28 dB. Besides, the Si₃N₄–SiBC ceramic also shows a high mechanical property. Therefore, the Si₃N₄–SiBC ceramic exhibits great potential as an excellent functional and structural ceramic.     

Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O<Subscript>2</Subscript> plasma

Plasma-enhanced atomic layer deposition (PEALD) is well-known for fabricating conformal and uniform films with a well-controlled thickness at the atomic level over any type of supporting substrate. We prepared nickel oxide (NiO) thin films via PEALD using bis(ethylcyclopentadienyl)-nickel (Ni(EtCp)₂) and O₂ plasma. To optimize the PEALD process, the effects of parameters such as the precursor pulsing time, purging time, O₂ plasma exposure time, and power were examined. The optimal PEALD process has a wide deposition-temperature range of 100–325 °C and a growth rate of 0.037±0.002 nm per cycle. The NiO films deposited on a silicon substrate with a high aspect ratio exhibited excellent conformality and high linearity with respect to the number of PEALD cycles, without nucleation delay.