Optical and electrochromic properties of oxygen sputtered tungsten oxide (WO3) thin films

Thin films of tungsten oxide (WO₃) were deposited onto glass, ITO coated glass and silicon substrates by pulsed DC magnetron sputtering (in active arc suppression mode) of tungsten metal with pure oxygen as sputter gas. The films were deposited at various oxygen pressures in the range 1.5×10⁻²−5.2×10⁻² mbar. The influence of oxygen sputters gas pressure on the structural, optical and electrochromic properties of the WO₃ thin films has been investigated. All the films grown at various oxygen pressures were found to be amorphous and near stoichiometric. A high refractive index of 2.1 (at λ=550 nm) was obtained for the film deposited at a sputtering pressure of 5.2×10⁻² mbar and it decreases at lower oxygen sputter pressure. The maximum optical band gap of 3.14 eV was obtained for the film deposited at 3.1×10⁻² mbar, and it decreases with increasing sputter pressure. The decrease in band gap and increase in refractive index for the films deposited at 5.2×10⁻² mbar is attributed to the densification of films due to ‘negative ion effects’ in sputter deposition of highly oxygenated targets. The electrochromic studies were performed by protonic intercalation/de-intercalation in the films using 0.5 M HCl dissolved in distilled water as electrolyte. The films deposited at high oxygen pressure are found to exhibit better electrochromic properties with high optical modulation (75%), high coloration efficiency (CE) (141.0 cm²/C) and less switching time at λ=550 nm; the enhanced electrochromism in these films is attributed to their low film density, smaller particle size and larger thickness. However, the faster color/bleach dynamics is these films is ascribed to the large insertion/removal of protons, as evident from the contact potential measurements (CPD) using Kelvin probe. The work function of the films deposited at 1.5 and 5.2×10⁻² mbar are 4.41 and 4.30 eV, respectively.     

ZnO-doped BaZr0.85Y0.15O3−δ proton-conducting electrolytes: Characterization and fabrication of thin films

ZnO-doped BaZr_0.85Y_0.15O_3−δ perovskite oxide sintered at 1500 °C has bulk conductivity of the order of 10⁻² S cm⁻¹ above 650 °C, which makes it an attractive proton-conducting electrolyte for intermediate-temperature solid oxide fuel cells. The structure, morphology and electrical conductivity of the electrolyte vary with sintering temperature. Optimal electrochemical performance is achieved when the sintering temperature is about 1500 °C. Cathode-supported electrolyte assemblies were prepared using spin coating technique. Thin film electrolytes were shown to be dense using SEM and EDX analyses.     

Electrophoretic deposition of dense BaCe0.9Y0.1O3−x electrolyte thick-films on Ni-based anodes for intermediate temperature solid oxide fuel cells

Proton conducting BaCe_0.9Y_0.1O_3−x (BCY10) thick films are deposited on cermet anodes made of nickel–yttrium doped barium cerate using electrophoretic deposition (EPD) technique. BCY10 powders are prepared by the citrate–nitrate auto-combustion method and the cermet anodes are prepared by the evaporation and decomposition solution and suspension method. The EPD parameters are optimized and the deposition time is varied between 1 and 5 min to obtain films with different thicknesses. The anode substrates and electrolyte films are co-sintered at 1550 °C for 2 h to obtain a dense electrolyte film keeping a suitable porosity in the anode, with a single heating treatment. The samples are characterized by field emission scanning electron microscopy (FE-SEM) and energy dispersion spectroscopy (EDS). A prototype fuel cell is prepared depositing a composite La_0.8Sr_0.2Co_0.8Fe_0.2O₃ (LSCF)–BaCe_0.9Yb_0.1O_3−δ (10YbBC) cathode on the co-sintered half cell. Fuel cell tests that are performed at 650 °C on the prototype single cells show a maximum power density of 174 mW cm⁻².     

Characterization of Pr1−xSrxCo0.8Fe0.2O3−δ (0.2 ≤ x ≤ 0.6) cathode materials for intermediate-temperature solid oxide fuel cells

Cathode materials consisting of Pr_1−xSr_xCo_0.8Fe_0.2O_3−δ (x = 0.2–0.6) were prepared by the sol–gel process for intermediate-temperature solid oxide fuel cells (IT-SOFCs). The samples had an orthorhombic perovskite structure. The electrical conductivities were all higher than 279 S cm⁻¹. The highest conductivity, 1040 S cm⁻¹, was found at 300 °C for the composition x = 0.4. Symmetrical cathodes made of Pr_0.6Sr_0.4Co_0.8Fe_0.2O_3−δ (PSCF)–Ce_0.85Gd_0.15O_1.925 (50:50 by weight) composite powders were screen-printed on GDC electrolyte pellets. The area specific resistance value for the PSCF–GDC cathode was as low as 0.046 Ω cm² at 800 °C. The maximum power densities of a cell using the PSCF–GDC cathode were 520 mW cm⁻², 435 mW cm⁻² and 303 mW cm⁻² at 800 °C, 750 °C and 700 °C, respectively.     

A potential interconnect material for solid oxide fuel cells: Nd0.75Ca0.25Cr0.98O3−δ

Chromium-deficient Nd_0.75Ca_0.25Cr_1−xO_3−δ (0.02 ≤ x ≤ 0.06) oxides are synthesized and assessed as a novel ceramic interconnect for solid oxide fuel cells (SOFCs). At room temperature, all the samples present single perovskite phase after sintering at 1600 °C for 10 h in air. Cr-deficiency significantly improves the electrical conductivity of Nd_0.75Ca_0.25Cr_1−xO_3−δ oxides. No structural transformation occurs in the Nd_0.75Ca_0.25Cr_1−xO_3−δ oxides in the temperature range studied. Among all the samples, the Nd_0.75Ca_0.25Cr_0.98O_3−δ sample with a relative density of 96.3% exhibits the best electrical conductivity of 39.0 and 1.6 S cm⁻¹ at 850 °C in air and hydrogen, respectively. The thermal expansion coefficient of Nd_0.75Ca_0.25Cr_0.98O_3−δ sample is 9.29 × 10⁻⁶ K⁻¹ in the temperature range from 30 to 1000 °C in air, which is close to that of 8 mol% yttria stabilized zirconia electrolyte (10.3 × 10⁻⁶ K⁻¹) and other cell components. The results indicate that Nd_0.75Ca_0.25Cr_0.98O_3−δ is a potential interconnect material for SOFCs.     

Stable, easily sintered BaCe0.5Zr0.3Y0.16Zn0.04O3−δ electrolyte-based protonic ceramic membrane fuel cells with Ba0.5Sr0.5Zn0.2Fe0.8O3−δ perovskite cathode

A stable, easily sintered perovskite oxide BaCe_0.5Zr_0.3Y_0.16Zn_0.04O_3−δ (BCZYZn) as an electrolyte for protonic ceramic membrane fuel cells (PCMFCs) with Ba_0.5Sr_0.5Zn_0.2Fe_0.8O_3−δ (BSZF) perovskite cathode was investigated. The BCZYZn perovskite electrolyte synthesized by a modified Pechini method exhibited higher sinterability and reached 97.4% relative density at 1200 °C for 5 h in air, which is about 200 °C lower than that without Zn dopant. By fabricating thin membrane BCZYZn electrolyte (about 30 μm in thickness) on NiO–BCZYZn anode support, PCMFCs were assembled and tested by selecting stable BSZF perovskite cathode. An open-circuit potential of 1.00 V, a maximum power density of 236 mW cm⁻², and a low polarization resistance of the electrodes of 0.17 Ω cm² were achieved at 700 °C. This investigation indicated that proton conducting electrolyte BCZYZn with BSZF perovskite cathode is a promising material system for the next generation solid oxide fuel cells.     

Characterization of the 75% Gd0.8Sr0.2CoO3−δ/25% Ce0.9Gd0.1O2−δ composite cathode system for use in intermediate temperature solid oxide fuel cells

The composite cathode system is examined for suitability on a Ce_0.9Gd_0.1O_2−δ electrolyte based solid oxide fuel cell at intermediate temperatures (500–700 °C). The cathode is characterized for electronic conductivity and area specific charge transfer resistance. This cathode system is chosen for its excellent thermal expansion match to the electrolyte, its relatively high conductivity (115 S cm⁻¹ at 700 °C), and its low activation energy for oxygen reduction (99 kJ mol⁻¹). It is found that the decrease of sintering temperature of the composite cathode system produces a significant decrease in charge transfer resistances to as low as 0.25 Ω cm². The conductivity of the cathode systems is between 40 and 88 S cm⁻¹ for open porosities of 30–40%.     

Structural, thermal and electrochemical properties of layered perovskite SmBaCo2O5+d, a potential cathode material for intermediate-temperature solid oxide fuel cells

The synthesis, conductivity properties, area specific resistance (ASR) and thermal expansion behaviour of the layered perovskite SmBaCo₂O_5+d (SBCO) are investigated for use as a cathode material for intermediate-temperature solid oxide fuel cells (IT-SOFCs). The SBCO is prepared and shows the expected orthorhombic pattern. The electrical conductivity of SBCO exhibits a metal–insulator transition at about 200 °C. The maximum conductivity is 570 S cm⁻¹ at 200 °C and its value is higher than 170 S cm⁻¹ over the whole temperature range investigated. Under variable oxygen partial pressure SBCO is found to be a p-type conductor. The ASR of a composite cathode (50 wt% SBCO and 50 wt% Ce_0.9Gd_0.1O_2−d, SBCO:50) on a Ce_0.9Gd_0.1O_2−d (CGO91) electrolyte is 0.05 Ω cm² at 700 °C. An abrupt increase in thermal expansion is observed in the vicinity of 320 °C and is ascribed to the generation of oxygen vacancies. The coefficients of thermal expansion (CTE) of SBCO is 19.7 and 20.0 × 10⁻⁶ K⁻¹ at 600 and 700 °C, respectively. By contrast, CTE values for SBCO:50 are 12.3, 12.5 and 12.7 × 10⁻⁶ K⁻¹ at 500, 600 and 700 °C, that is, very similar to the value of the CGO91 electrolyte.     

Nanocomposite gel electrolyte with large enhanced charge transport properties of an I3/I redox couple for quasi-solid-state dye-sensitized solar cells

TiO₂ nanoparticles was introduced into quasi-solid-state Poly(vinylidenefluoride-co-hexafluoropropylene) (P(VDF-HFP)) based gel electrolyte to form nanocomposite gel electrolyte for quasi-solid-state dye-sensitized solar cells. The steady-state voltammograms revealed that the diffusion performance of the triiodide and iodide in the quasi-solid-state P(VDF-HFP) based gel electrolyte was greatly enhanced after the addition of TiO₂ nanoparticles. Especially, the apparent diffusion coefficient of I₃⁻ increased from 0.76×10⁻¹⁰ m²/s to 4.42×10⁻¹⁰ m²/s, reached the level of the liquid electrolyte (4.04×10⁻¹⁰ m²/s). By introducing TiO₂ nanoparticles, the photoelectric conversion efficiency of the gel based device increased from 5.72% to 7.18%, which reached the level of the liquid electrolytes based device (7.01%). The electrical impedance spectrum revealed that the addition of TiO₂ nanoparticles could reduce the charge recombination at the interface of dyed TiO₂ electrode/electrolyte. The results of the accelerated aging tests showed that the nano-TiO₂ composite gel electrolytes based devices could maintain 90% of their initial value after heating at 60 °C for 1000 h, which indicated that they had better thermostability than the corresponding normal gel electrolyte based devices and liquid electrolyte based devices.     

Thermal cycle stability of BaO–B2O3–SiO2 sealing glass

Thermal cycle stability is very important for glass seals in planar solid oxide fuel cell (pSOFC) applications. In the present study, thermal cycle stability of a thermally stable sealing glass is investigated using a sealing fixture from 150 °C to 700 °C. SS410 alloy with the TEC (thermal expansion coefficient) of 12.2 × 10⁻⁶ K⁻¹ (room temperature to 700 °C) is used to evaluate the effect of TEC mismatch on the thermal cycle stability. The leak rates increase with thermal cycles and appear to be two different stages. Microstructure examinations are performed to investigate the degradation mechanism of the thermal cycle stability. It is found that the sealing glass interacts chemically with the SS410 alloy and the formation of BaCrO₄ new phase results in the rapid increase of the leak rates.     

Highly transparent and conductive Zn0.85Mg0.15O:Al thin films prepared by pulsed laser deposition

Zn_1−xMg_xO:Al thin films have been prepared on glass substrates by pulsed laser deposition (PLD). The effect of substrate temperature has been investigated from room temperature to 500 °C by analyzing the structural, optical and electrical properties. The best sample deposited at 250 °C shows the lowest room-temperature resistivity of 5.16×10⁻⁴ Ω cm, and optical transmittance higher than 80% in the visible region. It is observed that the optical band gap decreases from 3.92 to 3.68 eV when the substrate temperature increases from 100 to 500 °C. The probable mechanism is discussed.     

RF sputter deposition of the high-quality intrinsic and n-type ZnO window layers for Cu(In,Ga)Se2-based solar cell applications

Transparent ZnO films were prepared by rf magnetron sputtering, and their electrical, optical, and structural properties were investigated under various sputtering conditions. Aluminum-doped n-type(n-ZnO) and undoped intrinsic-ZnO (i-ZnO) layers were deposited on a glass substrate by incorporating different targets in the same reaction chamber. The n-ZnO films were strongly affected by argon ambient pressure and substrate temperature, and films deposited at 2 mTorr and 100°C showed superior properties in resistivity, transmission, and figure of merit (FOM). The sheet resistance of ZnO film was less dependent on film thickness when the substrate was heated during deposition. These positive effects of elevated substrate temperature are presumably attributed to the rearrangement of the sputtered atoms by the heat energy. Also, the films are electrically uniform through the 5 cm×5 cm substrate. The maximum deviation in sheet resistance is less than 10%. All of the films showed strong (0 0 2) diffraction peak near 2θ =34°. The undoped i-ZnO films deposited in the mixture of argon and oxygen gases showed high transmission properties in the visible range, independent of the Ar/O₂ ratio, while resistivity rose with increased oxygen partial pressure. The Cu(In,Ga)Se₂ solar cells, incorporating bi-layer ZnO films (n-ZnO/i-ZnO) as window layer, were finally fabricated. The fabricated solar cells showed 14.48% solar efficiency under AM 1.5 conditions (100 mW/cm²).     

TiO2 thin films as protective material for transparent-conducting oxides used in Si thin film solar cells

Nb-doped TiO₂ films have been fabricated by RF magnetron sputtering as protective material for transparent-conducting oxide (TCO) films used in Si thin film solar cells. It is found that TiO₂ has higher resistance against hydrogen radical exposure, utilizing the hot-wire CVD (catalytic CVD) apparatus, compared with SnO₂ and ZnO. Further, the minimum thickness of TiO₂ film as protective material for TCO was experimentally investigated. Electrical conductivity of TiO₂ in the as-deposited film is found to be 10⁻⁶ S/cm due to the Nb doping. Higher conductivity of 10⁻² S/cm is achieved in thermally annealed films. Nitrogen treatments of Nb-doped TiO₂ film have been also performed for improvements of optical and electric properties of the film. The electrical conductivity becomes 4.5×10⁻² S/cm by N₂ annealing of TiO₂ films at 500 °C for 30 min. It is found that the refractive index n of Nb-doped TiO₂ films can be controlled by nitrogen doping (from n=2.2 to 2.5 at λ = 550 nm) using N₂ as a reactive gas. The controllability of n implies a better optical matching at the TCO/p-layer interface in Si thin film solar cells.     

Heat treatment effects on the optical properties of Sol–gel Ta2O5 thin films

In this work optical properties of Ta₂O₅ thin films with respect to heat treatment temperature were investigated. Ta₂O₅ thin films were prepared by sol–gel process using dip-coated method with a constant speed of 107 mm/min. Optical properties have been calculated from optical transmission measurements as a function of heat treatment temperature. The refractive indices and absorption coefficients were affected by heat treatment. The refractive index at λ=550 nm increased from 1.84 to 2.04 and absorption coefficient increased from 241 to 5668 cm⁻¹ when heat treatment temperature increased from 100°C to 500°C. The thickness of the film decreased from 272 to 190 nm and their optical band gap decreased from 3.68±0.09 eV to 3.51±0.08 eV for the film heated from 100°C to 500°C.     

Reduction of defects of polycrystalline silicon thin films by heat treatment with high-pressure H2O vapor

An improvement of electrical properties of pulsed laser crystalllized silicon films was achieved by simple heat treatment with high-pressure H₂O vapor. The electrical conductivity of 7.4×10¹⁷ cm⁻³ phosphorus-doped 50-nm-thick pulsed laser crystallized silicon films was markedly increased from 1.6×10⁻⁵ S/cm (as crystallized) to 2 S/cm by heat treatment at 270°C for 3 h with 1.25×10⁶ Pa H₂O vapor because of reduction of density of defect states localized at grain boundaries. Spin density was reduced from 1.7×10¹⁸ cm⁻³ (as crystallized) to 1.2×10¹⁷ cm⁻³ by heat treatment at 310°C for 3 h with 1.25×10⁶ Pa H₂O vapor.     

Cube-type micro SOFC stacks using sub-millimeter tubular SOFCs

Fabrication and characterization of tubular SOFCs under sub-millimeter (0.8 mm), bundles and stacks for low temperature operation were shown. The materials used in this study were Gd doped CeO₂ (GDC) for electrolyte, NiO–GDC for anode and (La, Sr)(Co, Fe)O₃ (LSCF)–GDC for cathode, respectively, and LSCF for supports of the tubular cells for bundle fabrication. After applying a sealing layer and current collector for each bundle of five micro tubular SOFCs, each bundle was stacked vertically, to build a four-storey cube-type stack with volume of about 0.8 cm³. The performance of the stack was shown to be 3.6 V OCV and 2 W maximum output power under 500 °C operating temperature. Preliminary quick start-up test was also conducted at the condition of 3 min start-up time from 150 to 400 °C for 5 times, and the results showed no degradation of the performance during the test.     

Pyrite (FeS2) thin films prepared by spray method using FeSO4 and (NH4)2Sx

A simple spray method for the preparation of pyrite (FeS₂) thin films has been studied using FeSO₄ and (NH₄)₂S_x as precursors for Fe and S, respectively. Aqueous solutions of these precursors are sprayed alternately onto a substrate heated up to 120°C. Although Fe–S compounds including pyrite are formed on the substrate by the spraying, sulfurization of deposited films is needed to convert other phases such as FeS or marcasite into pyrite. A single-phase pyrite film is obtained after the sulfurization in a H₂S atmosphere at around 500°C for 30 min. All pyrite films prepared show p-type conduction. They have a carrier concentration (p) in the range 10¹⁶–10²⁰ cm⁻³ and a Hall mobility (μ_H) in the range 200–1 cm²/V s. The best electrical properties (p=7×10¹⁶ cm⁻³, μ_H=210 cm²/V s) for a pyrite film prepared here show the excellence of this method. The use of a lower concentration FeSO₄ solution is found to enhance grain growth of pyrite crystals and also to improve electrical properties of pyrite films.     

Aging effect of diethanolamine stabilized sol on different properties of TiO2 films: Electrochromic applications

Diethanolamine derived clear precursor sol has been utilized for the deposition of TiO₂ films annealed at 470 °C for 5 min. Effect of the precursor sol's aging on different properties of the films has been examined in the present study. Films obtained from aged sol have exhibited superior electrochemical (diffusion coefficient—2.46×10⁻¹⁰ cm² s⁻¹) and electrochromic characteristics due to enhanced Li ion insertion upon application of electric field. The aged sol derived films have exhibited a higher optical modulation (40% at 550 nm) between the colored and bleached states. The ion storage capacities of the films derived from freshly prepared and aged sols are 4.1 and 8.1 mC cm⁻², respectively, upon applied voltage of ±1.5 V. X-ray diffraction studies have affirmed an increase in the TiO₂ crystallite size upon the use of aged sol for the deposition of films. FTIR investigations have confirmed the conversion of Ti–O–Ti to Ti–O network in the aged sol derived films. SEM studies have evidenced porosity changes in films obtained from the sol aged for different durations. The index of refraction as measured by the ellipsometry method corroborates the SEM results and shows reduced porosity (pore size—38 nm) in films derived from the sol just reaching the state of gelation. Thickness of the aged sol derived film is measured to be the highest i.e. 350 nm. Energy bandgaps of the films for both direct and indirect transitions tend to decrease as a function of sol's aging.     

Stability of thin film solar cells having less-hydrogenated amorphous silicon i-layers

In this study, highly stabilized hydrogenated amorphous silicon films and their solar cells were developed. The films were fabricated using the triode deposition system, where a mesh was installed between the cathode and the anode (substrate) in a plasma-enhanced chemical vapor deposition system. At a substrate temperature of 250 °C, the hydrogen concentration of the resulting film (Si–H=4.0 at%, Si–H₂<1×10²⁰ cm⁻³) was significantly less than that of conventionally prepared films. The films were used to develop the i-layers of solar cells that exhibited a significantly low degradation ratio of 7.96%.     

High performance of proton-conducting solid oxide fuel cell with a layered PrBaCo2O5+δ cathode

A dense BaZr_0.1Ce_0.7Y_0.2O_3−δ (BZCY) electrolyte is fabricated on a porous anode by in situ drop-coating method which can lead to extremely thin electrolyte membrane (10 μm in thickness). The layered perovskite structure oxide PrBaCo₂O_5+δ (PBCO) is synthesized by auto ignition process and initially examined as a cathode for proton-conducting IT-SOFCs. The electrical conductivity of PrBaCo₂O_5+δ (PBCO) reaches the general required value for the electrical conductivity of cathode absolutely. The single cell, consisting of PrBaCo₂O_5+δ (PBCO)/BaZr_0.1Ce_0.7Y_0.2O_3−δ (BZCY)/NiO-BaZr_0.1Ce_0.7Y_0.2O_3−δ (BZCY) structure, is assembled and tested from 600 to 700 °C with humidified hydrogen (3% H₂O) as the fuel and air as the oxidant. An open-circuit potential of 1.01 V and a maximum power density of 545 mW cm⁻² at 700 °C are obtained for the single cell, and a low polarization resistance of the electrodes of 0.15 Ω cm² is achieved at 700 °C.