Intermetallic formation in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with immersion Ag surface finish

The intermetallic compounds formed in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Ag/Cu pads are investigated. After reflow, scallop-shaped η-Cu₆Sn₅ and continuous planar η-(cu_0.9Ni_0.1)₆Sn₅ intermetallics appear at the interfaces of the Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder joints, respectively. In the case of the Sn3Ag0.5Cu specimens, an additional ε-Cu₃Sn intermetallic layer is formed at the interface between the η-Cu₆Sn₅ and Cu pads after aging at 150°C, while the same type of intermetallic formation is inhibited in the Sn3Ag0.5Cu0.06Ni0.01Ge packages. In addition, the coarsening of Ag₃Sn precipitates also abates in the solder matrix of the Sn3Ag0.5Cu0.06Ni0.01Ge packages, which results in a slightly higher ball shear strength for the specimens.     

Intermetallic reactions in Sn-3.5Ag solder ball grid array packages with Ag/Cu and Au/Ni/Cu pads

During the reflow process of Sn-3.5Ag solder ball grid array (BGA) packages with Ag/Cu and Au/Ni/Cu pads, Ag and Au thin films dissolve rapidly into the liquid solder, and the Cu and Ni layers react with the Sn-3.5Ag solder to form Cu₆Sn₅ and Ni₃Sn₄ intermetallic compounds at the solder/pad interfaces, respectively. The Cu₆Sn₅ intermetallic compounds also appear as clusters in the solder matrix of Ag surface-finished packages accompanied by Ag₃Sn dispersions. In the solder matrix of Au/Ni surface-finished specimens, Ag₃Sn and AuSn₄ intermetallics can be observed, and their coarsening coincides progressively with the aging process. The interfacial Cu₆Sn₅ and Ni₃Sn₄ intermetallic layers grow by a diffusion-controlled mechanism after aging at 100 and 150°C. Ball shear strengths of the reflowed Sn-3.5Ag packages with both surface finishes are similar, displaying the same degradation tendencies as a result of the aging effect.     

Characterizing metallurgical reaction of Sn3.0Ag0.5Cu composite solder by mechanical alloying with electroless Ni-P/Cu under-bump metallization after various reflow cycles

Electroless Ni-P/Cu under-bump metallization (UBM) is widely used in electronics packaging. The Sn3.0Ag0.5Cu lead-free composite solder pastes were produced by a mechanical alloying (MA) process doped with Cu₆Sn₅ nanoparticles. In this study, the detailed interfacial reaction of Sn3.0Ag0.5Cu composite solders with EN(P)/Cu UBM was investigated after reflow. A field-emission scanning electron microscope (FESEM) was employed to analyze the interfacial morphology and microstructure evolution. The intermetallic compounds (IMCs) formed at the interface between the Sn3.0Ag0.5Cu composite solders and EN(P)/Cu UBM after one and three reflows were mainly (Ni_1−x,Cu_x)₃Sn₄ and (Cu_1−y,Ni_y)₆Sn₅. However, only (Ni_1−x,Cu_x)₃Sn₄ IMC was observed after five reflows. The elemental distribution near the interfacial region was evaluated by an electron probe microanalyzer (EPMA) as well as field-emission electron probe microanalyzer (FE-EPMA). Based on the observation and characterization by FESEM, a EPMA, and an FE-EPMA, the reaction mechanism of interfacial phase transformation between Sn3.0Ag0.5Cu composite solders and EN(P)/Cu UBM after various reflow cycles was discussed and proposed.     

Abnormal growth of tin whiskers in a Sn3Ag0.5Cu0.5Ce solder ball grid array package

It has been discovered for the first time that Sn whiskers appeared in Sn3Ag0.5Cu0.5Ce solder joints of ball grid array (BGA) packages after storage at room temperature (natural aging) for less than 3 days and they grew at a high rate of 2.9 ?/sec. In one particular case, whiskers even formed after 1 day of storage at an extremely high growth rate of 8.6 ?/sec. Experimental investigations showed that a number of CeSn₃ clusters existed in the Sn3Ag0.5Cu0.5Ce solder matrix after the reflow process. Further natural aging in air for several days caused the CeSn₃ phases to oxidize rapidly, from which many Sn whiskers sprouted and grew to a length of hundreds of micrometers. The most commonly observed whiskers have been long fiber-shaped ones of 0.1 μm to 0.3 μm in diameter (type I), while short whiskers larger than 1 μm in diameter can also be found (type II). Here in our case, the surface oxide of the CeSn₃ phase possessed a higher content of Ce than of Sn, which implied that a Ce-depleted region (nearly of pure Sn) was left beneath the oxide layer. The abnormal whisker growth was attributed to the compressive stress squeezing the Sn atoms in the Ce-depleted region of CeSn₃ phase out of the oxide layer.     

Intermetallic reactions in Sn-8Zn-20In solder ball grid array packages with Au/Ni/Cu and Ag/Cu pads

During the reflow process of Sn-8Zn-20In solder joints in the ball grid array (BGA) packages with Au/Ni/Cu and Ag/Cu pads, the Au and Ag thin films react with liquid solder to form γ₃-AuZn₄/γ-Au₇Zn₁₈ and ε-AgZn₆ intermetallics, respectively. The γ₃/γ intermetallic layer is prone to floating away from the solder/Ni interface, and the appearance of any interfacial intermetallics cannot be observed in the Au/Ni surface finished Sn-8Zn-20In packages during further aging treatments at 75°C and 115°C. In contrast, ε-CuZn₅/γ-Cu₅Zn₈ intermetallics are formed at the aged Sn-8Zn-20In/Cu interface of the immersion Ag BGA packages. Bonding strengths of 3.8N and 4.0N are found in the reflowed Sn-8Zn-20In solder joints with Au/Ni/Cu and Ag/Cu pads, respectively. Aging at 75°C and 115°C gives slight increases of ball shear strength for both cases.     

Study of interfacial reactions between Sn3.5Ag0.5Cu composite alloys and Cu substrate

For development of a lead-free composite solder for advance electrical components, lead-free Sn3.5Ag0.5Cu solder was produced by mechanically mixing 0.5 wt.% TiO₂ nanopowder with Sn3.5Ag0.5Cu solder. The morphology and growth kinetics of the intermetallic compounds that formed during the soldering reactions between Sn3.5Ag0.5Cu solder with intermixed TiO₂ nanopowder and Cu substrates at various temperatures ranging from 250 to 325 °C were investigated. A scanning electron microscope (SEM) was used to quantify the interfacial microstructure at each processing condition. The thickness of interfacial intermetallic layers was quantitatively evaluated from SEM micrographs using imaging software. Experimental results show that a discontinuous layer of scallop-shaped Cu-Sn intermetallic compounds formed during the soldering. Kinetics analysis shows that the growth of such interfacial Cu-Sn intermetallic compounds is diffusion controlled with an activation energy of 67.72 kJ/mol.     

A study on interfacial reactions between electroless Ni-P under bump metallization and 95.5Sn-4.0Ag-0.5Cu alloy

Even though electroless Ni-P and Sn-Ag-Cu solders are widely used materials in flip-chip bumping technologies, interfacial reactions of the ternary Cu-Ni-Sn system are not well understood. The growth of intermetallic compounds (IMCs) at the under bump metallization (UBM)/solder interface can affect solder-joint reliability, so analysis of IMC phases and understanding their growth kinetics are important. In this study, interfacial reactions between electroless Ni-P UBM and the 95.5Sn-4.0Ag-0.5Cu alloy were investigated, focusing on identification of IMC phases and IMC growth kinetics at various reflowing and aging temperatures and times. The stable ternary IMC initially formed at the interface after reflowing was the (Cu,Ni)₆Sn₅ phase. However, during aging, the (Cu,Ni)₆Sn₅ phase slowly changed into the quaternary IMC composed of Cu, Ni, Sn, and a small amount of Au. The Au atoms in the quaternary IMC originated from immersion Au plated on electroless Ni-P UBM. During further reflowing or aging, the (Ni,Cu)₃Sn₄ IMC started forming because of the limited Cu content in the solder. Morphology, composition, and crystal structure of each IMC were identified using transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Small amounts of Cu in the solder affect the types of IMC phases and the amount of the IMC. The activation energies of (Cu,Ni)₆Sn₅ and (Ni,Cu)₃Sn₄ IMCs were used to estimate the growth kinetics of IMCs. The growth of IMCs formed in aging was very slow and temperature-dependent compared to IMCs formed in reflow because of the higher activation energies of IMCs in aging. Comparing activation energies of each IMC, growth mechanism of IMCs at electroless Ni-P/SnAgCu solder interface will be discussed.     

Sn3.8Ag0.7Cu和Sn37Pb焊点界面显微结构研究

利用扫描电子显微镜（SEM）和透射电子显微镜（TEM）研究了Sn3.8Ag0.7Cu（Sn37Pb）/Cu焊点在时效过程中的界面金属间化合物（IMC）形貌和成份。结果表明：150℃高温时效50、100、200、500h后,Sn3.8Ag0.7Cu（Sn37Pb）/Cu焊点界面IMC尺寸和厚度增加明显,IMC颗粒间的沟槽越来越小。50h时效后界面出现双层IMC结构,靠近焊料的上层为Cu6Sn5,邻近基板的下层为Cu3Sn。之后利用透射电镜观察了Sn37Pb/Ni和Sn3.8Ag0.7Cu/Ni样品焊点界面,结果显示,焊点界面清晰,IMC晶粒明显。     

Intermetallic reactions in reflowed and aged Sn-9Zn solder ball grid array packages with Au/Ni/Cu and Ag/Cu pads

During the reflowing of Sn-9Zn solder ball grid array (BGA) packages with Au/Ni/Cu and Ag/Cu pads, the surface-finished Au and Ag film dissolved rapidly and reacted with the Sn-9Zn solder to form a γ₃-AuZn₄/γ-Au₇Zn₁₈ intermetallic double layer and ε-AgZn₆ intermetallic scallops, respectively. The growth of γ₃-AuZn₄ is prompted by further aging at 100°C through the reaction of γ-Au₇Zn₁₈ with the Zn atoms dissolved from the Zn-rich precipitates embedded in the β-Sn matrix of Sn-9Zn solder BGA with Au/Ni/Cu pads. No intermetallic compounds can be observed at the solder/pad interface of the Sn-9Zn BGA specimens aged at 100°C. However, after aging at 150°C, a Ni₄Zn₂₁ intermetallic layer is formed at the interface between Sn-9Zn solder and Ni/Cu pads. Aging the immersion Ag packages at 100°C and 150°C caused a γ-Cu₅Zn₈ intermetallic layer to appear between ε-AgZn₆ intermetallics and the Cu pad. The scallop-shaped ε-AgZn₆ intermetallics were found to detach from the γ-Cu₅Zn₈ layer and float into the solder ball. Accompanied with the intermetallic reactions during the aging process of reflowed Sn-9Zn solder BGA packages with Au/Ni/Cu and Ag/Cu pads, their ball shear strengths degrade from 8.6 N and 4.8 N to about 7.2 N and 2.9 N, respectively.     

电迁移对Sn3.0Ag0.5Cu无铅焊点剪切强度的影响

通过热风回流焊制备了Cu/Sn3.0Ag0.5Cu/Cu对接互连焊点,测试了未通电及6.5 A直流电下通电36 h和48 h后焊点的剪切强度.结果表明,电迁移显著地降低了焊点的剪切强度,电迁移36 h使剪切抗力降低约30%,电迁移48 h降低约50%.SEM观察断口和界面形貌表明,界面金属间化合物增厚使断裂由韧性向脆性...     

Intermetallic compound formation and morphology evolution in the 95Pb5Sn flip-chip solder joint with Ti/Cu/Ni under bump metallization during reflow soldering

Intermetallic compound formation and morphology evolution in the 95Pb5Sn flip-chip solder joint with the Ti/Cu/Ni under bump metallization (UBM) during 350°C reflow for durations ranging from 50 sec to 1440 min were investigated. A thin intermetallic layer of only 0.4 μm thickness was formed at the 95Pb5Sn/UBM interface after reflow for 5 min. When the reflow was extended to 20 min, the intermetallic layer grew thicker and the phase identification revealed the intermetallic layer comprised two phases, (Ni,Cu)₃Sn₂ and (Ni,Cu)₃Sn₄. The detection of the Cu content in the intermetallic compounds indicated that the Cu atoms had diffused through the Ni layer and took part in the intermetallic compound formation. With increasing reflow time, the (Ni,Cu)₃Sn₄ phase grew at a faster rate than that of the (Ni,Cu)₃Sn₂ phase. Meanwhile, irregular growth of the (Ni,Cu)₃Sn₄ phase was observed and voids formed at the (Ni,Cu)₃Sn₂/Ni interface. After reflow for 60 min, the (Ni,Cu)₃Sn₂ phase disappeared and the (Ni,Cu)₃Sn₄ phase spalled off the NI layer in the form of a continuous layer. The gap between the (Ni,Cu)₃Sn₄ layer and the Ni layer was filled with lead. A possible mechanism for the growth, disappearance, and spalling of the intermetallic compounds at the 95Pb5Sn/UBM interface was proposed.     

Intermetallic compounds formed during the reflow of In-49Sn solder ball-grid array packages

The intermetallic compounds formed at the interfaces between In-49Sn solder balls and Au/Ni/Cu pads during the reflow of In-49Sn solder, ball-grid array (BGA) packages are investigated. Various temperature profiles with peak temperatures ranging from 140°C to 220°C and melting times ranging from 45 sec to 170 sec are plotted for the reflow processes. At peak temperatures below 170°C, a continuous double layer of intermetallics can be observed, showing a composition of Au(In,Ni)₂/Au(In,Ni). Through selective etching of the In-49Sn solders, the intermetallic layer is made up of irregular coarse grains. In contrast, a number of cubic-shaped AuIn₂ intermetallic compounds appear at the interfaces and migrate toward the upper domes of In-49Sn solder balls after reflow at peak temperatures above 200°C for longer melting times. The upward floating of the AuIn₂ cubes can be explained by a thermomigration effect caused by the temperature gradient present in the liquid solder ball. The intermetallic compounds formed under various reflow conditions in this study exhibit different types of morphology, yet the ball shear strengths of the solder joints in the In-49Sn BGA packages remain unaffected.     

Intermetallic compounds formed during the reflow and aging of Sn-3.8Ag-0.7Cu and Sn-20In-2Ag-0.5Cu solder ball grid array packages

After reflow of Sn-3.8Ag-0.7Cu and Sn-20In-2Ag-0.5Cu solder balls on Au/Ni surface finishes in ball grid array (BGA) packages, scallop-shaped intermetallic compounds (Cu_0.70Ni_0.28Au_0.02)₆Sn₅ (IM1a) and (Cu_0.76Ni_0.24)₆(Sn_0.86In_0.14)₅ (IM1b), respectively, appear at the interfaces. Aging at 100°C and 150°C for Sn-3.8Ag-0.7Cu results in the formation of a new intermetallic phase (Cu_0.70Ni_0.14Au_0.16)₆Sn₅ (IM2a) ahead of the former IM1a intermetallics. The growth of the newly appeared intermetallic compound, IM2a, is governed by a parabolic relation with an increase in aging time, with a slight diminution of the former IM1a intermetallics. After prolonged aging at 150°C, the IM2a intermetallics partially spall off and float into the solder matrix. Throughout the aging of Sn-20In-2Ag-.5Cu solder joints at 75°C and 115°C, partial spalling of the IM1b interfacial intermetallics induces a very slow increase in thickness. During aging at 115°C for 700 h through 1,000 h, the spalled IM1b intermetallics in the solder matrix migrate back to the interfaces and join with the IM1b interfacial intermetallics to react with the Ni layers of the Au/Ni surface finishes, resulting in the formation and rapid growth of a new (Ni_0.85Cu_0.15)(Sn_0.71In_0.29)₂ intermetallic layer (IM2b). From ball shear tests, the strengths of the Sn-3.8Ag-0.7Cu and Sn-20In-2Ag-0.5Cu solder joints after reflow are ascertained to be 10.4 N and 5.4 N, respectively, which drop to lower values after aging. An erratum to this article is available at .     

回流次数对Sn3.8Ag0.7Cu-xNi/Ni焊点的影响

研究了复合无铅焊料Sn3.8Ag0.7Cu-xNi(x=0.5,1.0,2.0)与Au/Ni/Cu焊盘在不同回流次数下形成的焊点的性能.结果表明,Ni颗粒增强的复合焊料具有良好的润湿性能,熔点小于222℃;X为0.5的焊料界面IMC由针状(CuNi)6Sn5演化为双层IMC,即多面体状化合物(CuNi)6Sn5和回飞棒...     

Intermetallics Evolution in Sn-3.5Ag Based Lead-Free Solder Matrix on an OSP Cu Finish

The 0.2Co + 0.1Ni dual additives were used to dope a Sn-3.5Ag solder matrix to modify the alloy microstructure and the solder joint on an organic solderability preservative (OSP) Cu pad. The refined microstructure of the Sn-3.5Ag-0.2Co-0.1Ni solder alloy or the reduced β-Sn size was attributed to the depressed undercooling achieved by the Co-Ni addition. After soldering on the OSP Cu pad, a large Ag₃Sn plate was formed at the Sn-3.5Ag/OSP solder joint, whereas it was absent at the Sn-3.5Ag-0.2Co-0.1Ni/OSP solder joints. With isothermal aging at 150°C, large Ag₃Sn plates formed at the Sn-3.5Ag/OSP solder joint were still observed. A coarsened and dispersed Ag₃Sn phase was found in the solder joints with Co-Ni additions as well. Compared to Cu₆Sn₅, the (Co,Ni)Sn₂ intermetallic compound showed much lower microhardness values. However, (Co,Ni)Sn₂ hardness was comparable to that of the Ag₃Sn phase. Pull strength testing of Sn-3.5Ag-0.2Co-0.1Ni/OSP revealed slightly lower values than for Sn-3.5Ag/OSP during aging. Such results are thought be due to the phase transformation of (Co,Ni)Sn₂ to (Cu,Co,Ni)₆Sn₅.     

Interfacial reactions and shear strengths between Sn-Ag-based Pb-free solder balls and Au/EN/Cu metallization

The morphological and compositional evolutions of intermetallic compounds (IMCs) formed at three Pb-free solder/electroless Ni-P interface were investigated with respect to the solder compositions and reflow times. The three Pb-free solder alloys were Sn3.5Ag, Sn3.5Ag0.75Cu, and Sn3Ag6Bi2In (in wt.%). After reflow reaction, three distinctive layers, Ni₃Sn₄ (or Ni-Cu-Sn for Sn3.5Ag0.75Cu solder), NiSnP, and Ni₃P, were formed on the electroless Ni-P layer in all the solder alloys. For the Sn3.5Ag0.75Cu solder, with increasing reflow time, the interfacial intermetallics switched from (Cu,Ni)₆Sn₅ to (Cu,Ni)₆Sn₅+(Ni,Cu)₃Sn₄, and then to (Ni,Cu)₃Sn₄ IMCs. The degree of IMC spalling for the Sn3.5Ag0.75Cu solder joint was more than that of other solders. In the cases of the Sn3.5Ag and Sn3Ag6Bi2In solder joints, the growth rate of the Ni₃P layer was similar because these two type solder joints had a similar interfacial reaction. On the other hand, for the Sn3.5Ag0.75Cu solder, the thickness of the Ni₃P and Ni-Sn-P layers depended on the degree of IMC spalling. Also, the shear strength showed various characteristics depending on the solder alloys and reflow times. The fractures mainly occurred at the interfaces of Ni₃Sn₄/Ni-Sn-P and solder/Ni₃Sn₄.     

The effect of Ag content on the formation of Ag3Sn plates in Sn-Ag-Cu lead-free solder

The formation of Ag₃Sn plates in the Sn-Ag-Cu lead-free solder joints for two different Ag content solder balls was investigated in wafer level chip scale packages (WLCSPs). After an appropriate surface mount technology reflow process on a printed circuit board, samples were subjected to 150°C high-temperature storage (HTS), 1,000 h aging, or 1,000 cycles thermal cycling test (TCT). Sequentially, the cross-sectional analysis was scrutinized using a scanning electron microscope/energy dispersive spectrometer (SEM/EDX) to observe the metallurgical evolution of the amount of the Ag₃Sn plates at the interface and the solder bulk itself. Pull and shear tests were also performed on samples. It was found that the interfacial intermetallic compound (IMC) thickness, the overall IMC area, and the numbers of Ag₃Sn plates increase with increasing HTS and TCT cycles. The amount of large Ag₃Sn plates found in the Sn-4.0Ag-0.5 Cu solder balls is much greater than that found in the Sn-2.6Ag-0.5Cu solder balls; however, no significant difference was found in the joint strength between two different Ag content solder joints.     

Intermetallic Reactions in Sn-0.4Co-0.7Cu Solder BGA Packages with an ENIG Surface Finish

As-cast Sn-0.4Co-0.7Cu solder contains both (Cu_0.98Co_0.02)₆Sn₅ and (Co_0.85Cu_0.15) Sn₃ intermetallic phases in the matrix. After reflowing, the Au thin film in the electroless Ni/immersion Au (ENIG) surface-finished Sn-0.4Co-0.7Cu solder ball grid array (BGA) packages dissolved rapidly into the solder matrix to form AuSn₄ intermetallics, and a thin layer of (Cu_0.57Ni_0.35Au_0.08)₆Sn₅ intermetallic compound appeared at the solder/pad interface, growing very slowly during aging at 100°C. Increasing the aging temperature to 150°C caused the formation of a new intermetallic layer, (Ni_0.79Cu_0.21)₃Sn₄, at the (Cu_0.57Ni_0.35Au_0.08)₆Sn₅/Ni interface. The reflowed Sn-0.4Co-0.7Cu BGA packages have a ball shear strength of 6.8 N, which decreases to about 5.7 N and 5.5 N after aging at 100°C and 150°C, respectively. The reflowed and aged solder joints fractured across the solder balls with ductile characteristics in ball shear tests.     

Reactive interdiffusion between a lead-free solder and Ti/Ni/Ag thin-film metallizations

The reactive interdiffusion between a Sn-3.0wt.%Ag-0.7wt.%Cu solder and thin-film Ti/Ni/Ag metallizations on two semiconductor devices, a diode and a metal-oxide-semiconductor field-effect transistor (MOSFET), and a Au-layer on the substrates are studied. Comprehensive microanalytical techniques, scanning electron microscopy, transmission electron microscopy (TEM), and analytical electron microscopy (AEM) are employed to identify the interdiffusion processes during fabrication and service of the devices. During the reflow process of both diode and MOSFET devices, (1) the Ag layer dissolves in the liquid solder; (2) two intermetallics, (Ni,Cu)₃Sn₄ and (Cu,Ni)₆Sn₅, form near the back metal/solder interface; and (3) the Au metallization in the substrate side dissolves in the liquid solder, resulting in precipitation of the (Au,Ni,Cu)Sn₄ intermetallic during solidification. During solid-state aging of both diode and MOSFET solder joints at 125°C and 200°C, the following atomic transport processes occur: (1) interdiffusion of Cu, Ni, and Sn, leading to the growth of a (Ni,Cu)₃Sn₄ layer until the Ni layer is completely consumed; (2) interdiffusion of Au, Cu, Ni, and Sn through the (Ni,Cu)₃Sn₄ layer and unconsumed Ni layer to the Ti layer to form a solid solution; and (3) further interdiffusion of Au, Cu, Ni, and Sn through the (Ni,Cu)₃Sn₄ layer to from an (Au,Ti,Ni,Cu)Sn₄ layer. The growth of the latter layer continues until the entire Ti layer is consumed.     

Solid-state annealing behavior of two high-Pb solders, 95Pb5Sn and 90Pb10Sn,on Cu under bump metallurgy

The solid-state annealing behavior of two high-lead solders, 95Pb5Sn and 90Pb10Sn (in wt.%), was examined. After reflow, Cu₃Sn intermetallics formed on the Cu under bump metallurgy (UBM) for both solder alloys. However, solidstate annealing produced significantly different reaction morphologies for the two solder compositions. The Cu₃Sn intermetallics spalled off faster at higher temperatures in the 95Pb5Sn solder. In the case of 90Pb10Sn solder, the Cu₃Sn intermetallics continued to grow even after 1500 h at 170°C. The difference was explained by a two-step phenomenon—Sn diffusion from the bulk solder region to the solder/Cu₃Sn interface (J_Sn), and subsequent intermetallic formation (I_Cu3Sn) by interdiffusion of Cu and Sn. For 95Pb5Sn, the relation, J_Sn < I_Cu3Sn was postulated because of insufficient supply of Sn. The relation, J_Sn > I_Cu3Sn was suggested for the continuous intermetallic growth of the 90Pb10Sn solder. Although a small difference was expected between the two quantities in both solder alloys, the difference in the solid-state annealing behavior was dramatic.