Pd－Ag－Si合金膜中的亚稳相

利用透射电子显微镜（ＴＥＭ）对Ｐｄ－Ａｇ－Ｓｉ合金膜的亚稳相进行了研究。结果表明，真空蒸发的Ｐｄ－Ａｇ－Ｓｉ合金膜由粒度均匀的纳米晶粒组成，具有ｆｃｃ结构。经不同温度退火后，在薄膜的局部区域析出了未知结构的亚稳相。利用电子衍射图确定了这些亚稳相的结构。     

Pd—Ag—Si合金膜中的亚稳相

利用透射电子显微镜（ＴＥＭ）对Ｐｄ－Ａｇ－Ｓｉ合金膜的亚稳相进行了研究，结果表明，真空蒸发的Ｐｄ－Ａｇ－Ｓｉ合金膜由粒度的均匀的纳米晶粒组成，具有ｆｃｃ结构，经不同温度退火后，在薄膜的局部区域析出了未知结构的亚稳相。利用电子衍射图确定了这些亚稳相的结构。     

Sm在GaAs（100）表面的吸附和界面反应的SRPES研究

利用同步辐射光发射研究了Ｓｍ／ＧａＡｓ（１０）界面形成．高分辨的芯能级谱结果表明，在低覆盖度下（＜０．１ｎｍ），Ｓｍ与衬底的作用较弱，形成较突出的金属／半导体界面．当Ｓｍ的覆盖度增加时，Ａｓ和Ｇａ的表面发射峰很快消失，表明Ｓｍ与Ｇａ发生置换反应而与Ａｓ形成化学键．同时，Ｇａ原子会向Ｓｍ膜体内扩散且偏析到Ｓｍ膜表面，而Ａｓ－Ｓｍ化合物只停留在界面区域．当Ｓｍ膜厚度达到０．５ｎｍ时，Ｓｍ膜开始金属化．结合理论模型，文中还详细地讨论了界面形成和界面结构．     

用于多种组装技术的厚膜导体复合结构

厚膜导体Ｐｄ－Ａｇ／Ａｕ、Ｐｔ－Ｐｄ－Ａｕ／Ａｕ平面复合结构，Ｐｄ－Ａｇ／Ａｕ立体复合结构可使多种组装技术相互兼容。立体复合结构还可有效地降低导体线电阻，减少线损耗。而且，其超声键合性尤佳     

Pt-Pd-Ag厚膜导体的粗Al丝键合

采用破坏性拉力试验和焊点接触电阻测量两种方法测试Ｐｔ－Ｐｄ－Ａｇ三元合金导体的粗Ａｌ丝超声键合的性能。分别在１２４℃，１０００ｈ和３００℃，１０ｈ条件下进行热老练和温度循环等环境试验，然后测量焊点的键合强度。在室温和１２５℃高温条件下，观察了Ａｌ／Ｐｔ－Ｐｄ－Ａｇ超声键合系统抗电流冲击的能力。试验结果表明：Ｐｔ－Ｐｄ－Ａｇ厚膜导体适于粗Ａｌ丝超声键合，键合强度能满足要求。     

GaAs中过渡族杂质Pd和Zr有关的深中心

采用结谱、光荧光等技术对Ｐｄ和Ｚｒ在ＧａＡｓ中的光学和电学性质进行了研究．在ＧａＡｓ：Ｐｄ中观测到三个能级，分别位于导带下０．４ｅＶ、０．６０ｅＶ和价带上０．６９ｅＶ．在ＧａＡｓ：Ｚｒ中也观测到三个能级，分别位于导带下０．４３ｅＶ和价带上０．３２ｅＶ和０．５５ｅＶ．基于深中心所表现出的Ｐｏｏｌｅ－Ｆｒｅｎｋｅｌ效应，讨论了一些中心对应的荷电态，对它们的俘获和对光致发光的影响也作了研究．结果表明：Ｐｄ和Ｚｒ在ＧａＡｓ中均不是有效的复合中心．     

具有金属反射膜的钨丝掩蔽两次质子轰击垂直腔面发射激光器

本文报道了一种工艺较简单的新结构垂直腔面发射激光器的设计与初步研制结果．所用的外延片是由分子束外延生长的，下镜面是由对Ａｌ０．１Ｇａ０．９Ａｓ／ＡｌＡｓ异质膜构成的分布布拉格反射器，上镜面是由对Ａｌ０．１Ｇａ０．９Ａｓ／ＡｌＡｓ异质膜构成的分布布拉格反射器及半反射半透明的金属膜组合构成．器件的电流注入区由钨丝掩蔽两次质子轰击形成．器件初步研制已实现了室温脉冲激射，阈值最低３２０ｍＡ，最大峰值功率可达９ｍＷ．     

厚膜导体的金属迁移研究

金属迁移能导致混合微电路发生灾难性失效。本文介绍一种简单易行的测试方法－水滴试验法，来测量厚膜电路的实际金属迁移率。用引方法测量时，发现Ｐｄ－Ａｇ导体的迁移率最大，Ｐｔ－Ａｕ导体的金属迁移率最小。     

XPS对离子交换法光色玻璃中银的状态研究

本文介绍利用ｘ射线光电子能谱分析仪（ＸＰＳ），对玻璃表面银的存在状态进行研究，实验结果表明银以Ａｇ＾０、Ａｇ＾＋、Ａｇ＾＋＋三种状态存在，而Ａｇ＾＋的存在有利于玻璃光色性的提高。文中并提出了在工艺过程中应采用惰性或弱氧化性气氛。     

新型AI金属化系统微波器件EB结的可靠性研究

对具有Ａｌ－Ｓｉ－Ｐｄ／ＴｉＮ／Ｔｉ／ＰｔＳｉ／Ｓｉ（样品Ａ）和Ａｌ－Ｓｉ－Ｐｄ／Ｔｉ／ＰｔＳｉ／Ｓｉ两种新型金属化结构的微波管的ＥＢ结在不同温度、相同电流条件下进行加速寿命试验，得到其中值寿命相差近一倍，激活能分别为０．９２和０．７９ｅＶ，并给出了在温度和电流力下ＥＢ结反向击穿特性的变化规律。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.