多晶薄膜CdS／CdTe太阳电池

报道了转换效率为１４．６％～１５．８％的多晶薄膜ＣｄＳ／ＣｄＴｅ太阳电池的研制。用ＭＯＣＶＤ法，在玻璃衬底上制备ＳｎＯ＿２和ＳｎＯ＿２：Ｆ薄膜，水溶液化学淀积法获得８０～１００ｎｍ厚的ＣｄＳ薄膜和密堆积升华法制备５μｍ厚ＣｄＴｅ薄膜，ＣｄＳ／ＣｄＴｅ太阳电池的短路电流密度高达２４～２５ｍＡ／ｃｍ￣２。同时，对各层薄膜晶形和微观结构进行了分析研究。     

激光CVD制备SnO_2薄膜的结构及其反应机理研究

采用ＳｎＣｌ４和Ｏ２为反应源，ＡｒＦ准分子激光ＣＶＤ生长ＳｎＯ２薄膜，利用ＸＲＤ、ＵＶＴ、ＸＰＳ研究了薄膜的组成和结构，实验表明ＳｎＯ２薄膜属于四方晶系、金红石结构，薄膜的紫外可见光透射率大于９０％，吸收边波长为３５５ｎｍ，禁带宽度为３．４９ｅＶ。最后，对ＳｎＯ２薄膜的反应机理进行了讨论     

复合绝缘层交流薄膜电致发光显示屏的综合设计

从交流薄膜电致发光显示屏的稳定性与可靠性角度出发，兼顾其发光亮以及驱动电路对屏的要求，对ＡＣＴＦＥＬ矩阵显示屏的结构进行了综合优化设计。从理论上分析了复合绝缘层ＳｉＯ２／Ｔａ２Ｏ５击穿方式的转变条件并计算了其合理的厚度比例，ＺｎＳ：Ｍｎ发光层的厚度和衬底ＩＴＯ方块电阻的取值范围。     

用于全彩色场致发光显示的氧化物荧光体

已经证明，用过渡族金属激活的氧化物荧光体作为场致发光器件的发光层以获得三角色，是有前途的。例如，发红光用Ｃｒ，发绿光用Ｍｎ与发蓝光用Ｔｉ。也已证明了ＺｎＡｌ２Ｏ４：Ｍｎ或Ｚｎ２ＳｉＯ４：Ｍｎ ＴＦＥＬ器件发出的绿光，Ｚｎ－Ｃａ２Ｏ４：ＣｒＴＦＥＬ器件发出的红光与Ｚｎ２ＳｉＯ４：Ｔｉ发出的蓝光均具有高亮度，适于用作全彩色ＴＦＥＬ显示器的三基色。     

SnO_2-Sb薄膜材料的制备及气敏性能

利用等离子体化学气相沉积法制备了ＳｎＯ２－Ｓｂ导电薄膜，测试了ＳｎＯ２－Ｓｂ的气敏效应。结果表明，该薄膜对ＮＯ２气体有较好的气敏特性。当测试温度升高，其气敏响应时间相差无几，但恢复时间变短，同时气敏灵敏度相对提高，当温度达到２００℃以上时，灵敏度基本恒定。同时还可看出，不同阻值的薄膜其气敏灵敏度相差不大。     

用MOCVD在ZnO/Al_2O_3衬底上生长GaN及其特性

本文报道利用直流反应磁控溅射技术在Ａｌ２Ｏ３上生长一层ＺｎＯ,再用ＬＰＭＯＣＶＤ在ＺｎＯ／Ａｌ２Ｏ３衬底上生长ＧａＮ．实验发现低温生长ＣａＮ过渡层有利于晶体质量的提高;ＰＬ谱主峰红移到蓝光区;二次离子质谱仪（ＳＩＭＳ）测量发现有Ｚｎ扩散到ＧａＮ外延层,Ｚｎ的扩散引起光致发光谱主峰移动．估算出在１０５０℃Ｚｎ在ＧａＮ中扩散系数是８６×１０－１４ｃｍ２／ｓ．     

低电阻率介质层制备低压驱动薄膜电致发光器件的研究

采用Ｔａ２Ｏ５／ＳｉＯ２，５ａ２Ｏ５／Ａｌ２Ｏ３复合介质制备出２低压驱动ＺｎＳ：Ｍｎ薄膜电致发光器件，它的阈值电压在４０Ｖ以下。当驱动电压国６０频率为５０Ｈｚ时，发光亮度在３００ｃｄ／ｍ＾２以上，发光层中平均电场强度为１０＾５Ｖ／ｃｍ数量级。这种器件具有其独特的亮主压特性、频率特性和电荷存储量－电压特性。     

SnO2纳米晶薄膜栅FET式气敏元件的研制

利用溶胶－凝胶法合成出纳米晶ＳｎＯ２薄膜,该薄膜可以利用化学腐蚀方法光刻腐蚀,因此采用传统硅平面工艺可以制作出纳米晶ＳｎＯ２薄膜栅ＦＥＴ式气敏元件,实现了制备纳米晶材料的溶胶－凝胶工艺与硅平面工艺的兼容。对器件的测试结果表明,纳米晶ＳｎＯ２薄膜栅ＦＥＴ式气敏元件可以在常温下工作,元件的漏电流在乙醇气体中减小,掺杂镧以后,漏电流变化幅度增大。     

静压下（CdSe）_m／（ZnSe）_n－ZnSe超短周期超晶格量子阱的共振喇曼散射研究

在静压和液氮温度下观察到（ＣｄＳｅ）ｍ／（ＺｎＳｅ）ｎ短周期超晶格中重空穴激子的复合发光和多达４阶的类ＺｎＳｅＬＯ多声子喇曼散射，并观察到厚ＺｎＳｅ势垒层的带边发光和限制在厚势垒层中的类ＺｎＳｅＬＯ声子散射．结果表明，加压后（ＣｄＳｅ）ｍ／（ＺｎＳｅ）ｎ短周期超晶格中的类ＺｎＳｅ的１ＬＯ和２ＬＯ声子模频率分别以３．７６和７．１１ｃｍ－１／ＧＰａ的速率向高频方向移动，超晶格阱层光致发光峰的压力系数为５９．８ｍｅＶ／ＧＰａ．与（ＣｄＳｅ）ｍ／（ＺｎＳｅ）ｎ短周期超晶格共振时的类ＺｎＳｅ１ＬＯ声子模频率比与ＺｎＳｅ势垒层共振时的类ＺｎＳｅ１ＬＯ声子模频率低２．０ｃｍ－１，反映了（ＣｄＳｅ）ｍ／（ＺｎＳｅ）ｎ短周期超晶格中ＬＯ声子的限制效应     

C2H2／H2／SiH4等离子体聚合及其沉积物的结构与性能的研究

利用Ｃ２Ｈ２／Ｈ２／ＳｉＨ４混合单体等离子体聚合沉积在ＨＤＰＥ板表面制备薄膜，发现薄膜与ＨＤＰＥ粘接良好，Ｈ２使薄膜与基体附着性能提高但其沉积速率下降，而引入ＳｉＨ４则使薄膜的耐磨性能有较大的提高。ＩＲ和ＸＰＳ光谱表明：薄膜中含有较多的－ＯＨ，Ｏ－Ｃ，Ｃ－Ｓｉ和Ｓｉ－Ｏ基团，随着ＳｉＨ４／Ｈ２的增加薄膜中的Ｃ／Ｓｉ比可达１．２２２，说明产物的结构介于无机材料和有机物之间。     

Tailoring the Optical Properties of Epitaxially Grown Biaxial ZnO/Ge,and Coaxial ZnO/Ge/ZnO and Ge/ZnO/Ge Heterostructures

Heterostructures of epitaxially grown biaxial ZnO/Ge, and coaxial ZnO/Ge/ZnO and Ge/ZnO/Ge heterostructured nanowires with ideal epitaxial interfaces between the semiconductor ZnO sublayer and the Ge sublayer have been fabricated via a two‐stage chemical vapor–solid process. Structural characterization by high‐resolution transmission electron microscopy and electron diffraction indicates that both the ZnO and Ge sublayers in the heterostructures are single crystalline. A good epitaxial relationship of (100)_ZnO∥(2 0)_Ge exists at the interface between ZnO and Ge in the ZnO/Ge biaxial heterostructure. There is also an epitaxial relationship of (0 0)_ZnO∥(020)_Ge at the interface between the ZnO and Ge substructures in the coaxial ZnO/Ge/ZnO heterostructures, and a good epitaxial relationship of (0 0)_ZnO∥(0 0)_Ge at the interface between ZnO and Ge in the Ge/ZnO/Ge coaxial heterostructure. Structural models for the crystallographic relationship between the wurtzite‐ZnO and diamond‐like cubic‐Ge subcomponents in the heterostructures are given. The optical properties for the synthesized heterostructures are studied by spatially resolved cathodoluminescence spectra at low temperature (20 K). Excitingly, the unique biaxial and coaxial heterostructures display unique new luminescence properties. It is concluded that the ideal epitaxial interface between ZnO and Ge in the prepared heterostructures induces new optical properties. The group II–VI Ge‐based nanometer‐scale heterostructures and their interesting optical properties may inspire great interest in exploring related epitaxial heterostructures and their potential applications in lasers, gas sensors, solar energy conversion, and nanodevices in the future.     

SnO2／Si的光伏特性

采用ＣＶＤ方法在硅单晶上制备ＳｎＯ２薄膜，对不同硅衬底及在不同温度下淀积ＳｎＯ２制得ＳｎＯ２／Ｓｉ进行光电压谱的测量，得出最佳的制备温度；采用类金属半导体接触模型，推导出有关计算公式，计算得出其介面复合速度和异质结势垒宽度等参数。     

Simulation approach for optimization of ZnO/c-WSe2 heterojunction solar cells

Taking into account defect density in WSe₂, interface recombination between ZnO and WSe₂, we presented a simulation study of ZnO/crystalline WSe₂ heterojunction (HJ) solar cell using wxAMPS simulation software. The optimal conversion efficiency 39.07% for n-ZnO/p-c-WSe₂ HJ solar cell can be realized without considering the impact of defects. High defect density (> 1.0 × 10¹¹ cm^-2) in c-WSe₂ and large trap cross-section (> 1.0 × 10^-10 cm²) have serious impact on solar cell efficiency. A thin p-WSe₂ layer is intentionally inserted between ZnO layer and c-WSe₂ to investigate the effect of the interface recombination. The interface properties are very crucial to the performance of ZnO/c-WSe₂HJ solar cell. The affinity of ZnO value range between 3.7-4.5 eV gives the best conversion efficiency.     

不同退火氛围对TiN/HfO2/SiO2/Si结构电荷分布的影响

热退火技术是集成电路制造过程中用来改善材料性能的重要手段。系统分析了两种不同的退火条件(氨气氛围和氧气氛围)对TiN/HfO₂/SiO₂/Si结构中电荷分布的影响,给出了不同退火条件下SiO₂/Si和HfO₂/SiO₂界面的界面电荷密度、HfO₂的体电荷密度以及HfO₂/SiO₂界面的界面偶极子的数值。研究结果表明,在氨气和氧气氛围中退火会使HfO₂/SiO₂界面的界面电荷密度减小、界面偶极子增加,而SiO₂/Si界面的界面电荷密度几乎不受退火影响。最后研究了不同退火氛围对电容平带电压的影响,发现两种不同的退火条件都会导致TiN/HfO₂/SiO₂/Si电容结构平带电压的正向漂移,基于退火对其电荷分布的影响研究,此正向漂移主要来源于退火导致的HfO₂/SiO₂界面的界面偶极子的增加。     

磷锑共掺SnO_2陶瓷的电阻-温度特性

采用湿化学法制备了磷锑共掺氧化锡Sn1–3xSbxP2xO2+δ(x=0.004,0.010,0.030,0.050)材料。利用XRD、SEM、电阻–温度特性测试系统和交流阻抗技术对所制氧化锡材料的物相组成、微观结构及导电特性进行了研究。结果表明:在x=0.004和0.010时,所制氧化锡材料由纯四方结晶相组成,但在x≥0.030时,材料中出现了微量的P2O5和SnP2O7杂质相;所制氧化锡材料的电阻–温度特性具有负温度系数(NTC)效应,这主要是晶粒效应和晶界效应共同作用的结果;最后利用能带理论对该材料的NTC导电机理进行了分析讨论。     

Au/SnO2异质同轴纳米电缆

本文报道了一种新型的Au/SnO2金属-半导体异质同轴纳米电缆结构。通过透射电镜表征,发现其轴心为沿特定方向生长的单晶Au纳米线,而壳层则为沿[100]方向生长的单晶SnO2,整体看来就如同一根单晶Au纳米线外套了一根单晶SnO2纳米管。管的两端是封闭的,而Au轴则几乎贯穿整个管,只在端部与SnO2之间有一定间隙。本文讨论了纳米电缆可能的生长机制,而空隙应该是由于两者的热膨胀系数不同所致。     

ZnO/PPy Hybrid Heterojunction as an Ultraviolet Photosensor

The electrodeposition method was used to deposit a zinc oxide (ZnO) layer on an indium tin oxide substrate. Polypyrrole (PPy) was deposited also by the electrodeposition method on the same ZnO layer to form a ZnO/PPy interface. Scanning electron microscopy was performed to investigate the morphology of the organic–inorganic interface. The p–n junction so formed was subjected to electrical studies. The junction was found to be sensitive to exposure to ultraviolet light, which increased the junction’s current density. The diode was found to have an open-circuit voltage (V _oc) of 0.518 V and a short-circuit current density (J _sc) of 9.86 × 10^?7 A/cm². The fill factor was estimated to be 0.37 with a rectification ratio of 93. Photoluminescence studies revealed quenching of the excitonic emission at the ZnO/PPy interface. The interface is thus found to be responsible for the effective separation of charge carriers.     

电纺SnO_2纳米纤维的制备及其气敏特性

采用聚乙烯醇(PVA,Mw=80000g/mol)和五水合四氯化锡(SnCl4.5H2O)作为静电纺丝前驱液,着重研究了纺丝电压、前驱液中PVA浓度及煅烧温度等因素对纺丝过程及纤维特性的影响,并用扫描电镜(SEM)和X射线衍射(XRD)等分析手段对纤维的微观结构、表面形貌和结晶状态进行了表征。结果表明,当纺丝电压为4kV、纺丝液中PVA质量分数为7%、退火温度为700℃时,可以得到平均直径为300nm的连续SnO2纳米纤维。该纤维对乙醇的响应恢复时间小于15s,检测极限低于10×10-9。     

Effects of Piezoelectric Potential of ZnO on Resistive Switching Characteristics of Flexible ZnO/TiO<Subscript>2</Subscript> Heterojunction Cells

Flexible resistance random access memory (ReRAM) devices with a heterojunction structure of PET/ITO/ZnO/TiO₂/Au were fabricated on polyethylene terephthalate/indium tin oxide (PET/ITO) substrates by different physical and chemical preparation methods. X-ray diffraction, scanning electron microscopy and atomic force microscopy were carried out to investigate the crystal structure, surface topography and cross-sectional structure of the prepared films. X-ray photoelectron spectroscopy was also used to identify the chemical state of Ti, O and Zn elements. Theoretical and experimental analyses were conducted to identify the effect of piezoelectric potential of ZnO on resistive switching characteristics of flexible ZnO/TiO₂ heterojunction cells. The results showed a pathway to enhance the performance of ReRAM devices by engineering the interface barrier, which is also feasible for other electronics, optoelectronics and photovoltaic devices.     

SnO_2∶ZnO薄膜光透射的气敏特性

作者研制成一种二氧化锡掺氧化锌的光学薄膜,该膜具有气敏特性。测量了它在甲醇蒸气、乙醇蒸气、氨气中光透射率与气体浓度的关系,并解释了它的机理。