Effects of oxidation cross-linking and sintering additives (TiN,B) on the formation and heat-resistant performance of polymer-derived SiC(Ti,B) films

Effects of oxidation cross-linking and sintering additives (TiN, B) on the microstructure formation and heat-resistant performance of freestanding SiC(Ti, B) films synthesized from Ti, B-containing polycarbosilane (TiB-PCS) precursor were investigated. TiB-PCS green films were first cross-linked for 1 h, 2 h, 3 h and 4 h, respectively, and then pre-sintered at 950 °C. Finally, they were sintered at 1800 °C to complete the conversion from organic films to inorganic SiC(Ti, B) films. The results reveal that curing time has a great impact on the uniformity and density of SiC(Ti, B) films. TiB-PCS films cured for 3 h yield the best quality SiC(Ti, B) films, which are composed of β-SiC crystals, C clusters, α-SiC nano-crystals, a small amount of TiB₂ and B₄C. TiB₂ and B₄C are both steady phases which can inhibit abnormal growth of β-SiC, effectively reduce sintering temperature and help consume excess C from decomposition of amorphous SiOxCy. After high temperature annealing at 1500 °C, 1600 °C and 1700 °C in argon, SiC(Ti, B) films still keep excellent mechanical properties, which makes them attractive candidate materials for microelectromechanical systems (MEMS) used at ultra-high temperatures (exceeding 1500 °C).     

Formation of porous SiC ceramics via recrystallization

In this study, porous SiC ceramics with interconnected huge plate-like grains were fabricated from oxidized β-SiC powder with 1 wt% B₄C. When the β–α SiC phase transformation occurred at 2100 °C, rapid grain growth of α-SiC consumed the unstable β-SiC matrix resulting in an interconnected network structure with huge plate-like grains. The oxidation of β-SiC powder and the addition of B₄C are necessary conditions for rapid grain growth. The observed results are discussed based on thermodynamic considerations. The measured porosity of the specimens sintered at 2100 °C for 30 min was 47% and the mean pore size was 6–7 μm. The strength of the sintered specimen was 45 ± 5 MPa.     

Microstructure and densification of ZrB2–SiC composites prepared by spark plasma sintering

ZrB₂–SiC composites were prepared by spark plasma sintering (SPS) at temperatures of 1800–2100 °C for 180–300 s under a pressure of 20 MPa and at higher temperatures of above 2100 °C without a holding time under 10 MPa. Densification, microstructure and mechanical properties of ZrB₂–SiC composites were investigated. Fully dense ZrB₂–SiC composites containing 20–60 mass% SiC with a relative density of more than 99% were obtained at 2000 and 2100 °C for 180 s. Below 2120 °C, microstructures consisted of equiaxed ZrB₂ grains with a size of 2–5 μm and α-SiC grains with a size of 2–4 μm. Morphological change from equiaxed to elongated α-SiC grains was observed at higher temperatures. Vickers hardness of ZrB₂–SiC composites increased with increasing sintering temperature and SiC content up to 60 mass%, and ZrB₂–SiC composite containing 60 mass% SiC sintered at 2100 °C for 180 s had the highest value of 26.8 GPa. The highest fracture toughness was observed for ZrB₂–SiC composites containing 50 mass% SiC independent of sintering temperatures.     

Fabrication and characterization of cordierite-bonded porous SiC ceramics

A reaction bonding technique was used for the preparation of cordierite-bonded porous SiC ceramics in air from α-SiC, α-Al₂O₃ and MgO, using graphite as the pore-forming agent. Graphite was burned out to produce pores and the surface of SiC was oxidized to SiO₂ at high temperature. With further increasing the temperature, SiO₂ reacted with α-Al₂O₃ and MgO to form cordierite. SiC particles were bonded by the cordierite and oxidation-derived SiO₂. The reaction bonding characteristics, phase composition, open porosity, pore size distribution and mechanical strength as well as microstructure of porous SiC ceramics were investigated. The pore size and porosity were strongly dependent, respectively, on graphite particle size and volume fraction. The porous SiC ceramics sintered at 1350 °C for 2 h exhibited excellent combination properties, the flexural strength of 26.0 MPa was achieved at an open porosity of 44.51%.     

Effects of oxidation curing and Al atoms on the formation of near-stoichiometric freestanding SiC(Al) films derived from polyaluminocarbosilane (PACS)

The effects of oxygen pick-up and Al atoms on the formation and microstructure of freestanding SiC(Al) films by melt spinning of polyaluminocarbosilane (PACS) precursor were studied. PACS green films were cross-linked for 1 h, 2 h, 3 h and 4 h, pre-pyrolyzed at 900 °C, respectively. They were continuously pyrolyzed at 1800 °C to convert initial PACS into SiC(Al) ceramic films. Results reveal that the strict control of oxygen content during the oxidation curing is essential to produce near-stoichiometric SiC(Al) films. The microstructure of the dense films is a mixture of β-SiC crystals, α-SiC nano-crystals, C clusters and a small amount of Al₄O₄C and Al₄SiC₄. Al atoms which play important roles as both sintering aids and grain growth inhibitor are well distributed in the films due to the presence of stable composition and structure. SiC(Al) films with excellent mechanical properties would be attractive candidate materials for MEMS in harsh environments.     

Influence of silicon carbide particle size on the microstructure and mechanical properties of zirconium diboride–silicon carbide ceramics

The influence of silicon carbide (SiC) particle size on the microstructure and mechanical properties of zirconium diboride–silicon carbide (ZrB₂–SiC) ceramics was investigated. ZrB₂-based ceramics containing 30 vol.% SiC particles were prepared from four different α-SiC precursor powders with average particle sizes ranging from 0.45 to 10 μm. Examination of the dense ceramics showed that smaller starting SiC particle sizes led to improved densification, finer grain sizes, and higher strength. For example, ceramics prepared from SiC with the particle size of 10 μm had a strength of 389 MPa, but the strength increased to 909 MPa for ceramics prepared from SiC with a starting particle size of 0.45 μm. Analysis indicates that SiC particle size controls the strength of ZrB₂–SiC.     

Complex impedance spectroscopy study of a liquid-phase-sintered α-SiC ceramic

The electrical response of a liquid-phase-sintered (LPS) α-SiC with 10 wt.% Y₃Al₅O₁₂ (YAG) additives was studied from near-ambient temperature up to 800 °C by complex impedance spectroscopy. The electrical conductivity of this LPS SiC ceramic was found to increase with increasing temperature, which was attributed to the semiconductor nature of the SiC grains. It was concluded that the contribution of the SiC grains to the electrical conductivity of the LPS SiC ceramic at moderate temperatures (<450 °C) is a somewhat greater than that of the YAG phase. In contrast, at higher temperatures the SiC grains control the electrical conductivity of the LPS SiC ceramic. It was also found that there are two activation energies for the electrical conduction process of the α-SiC grains. These are 0.19 eV at temperatures lower than ∼400 °C and 2.96 eV at temperatures higher than ∼500 °C. The existence of two temperature-dependence conduction regimes reflects the core–shell substructure that develops within the SiC grains during the liquid-phase sintering, where the core is pure SiC (intrinsic semiconductor) and the shell is mainly Al-doped SiC (extrinsic semiconductor).     

Stress measurements in ZrB2–SiC composites using Raman spectroscopy and neutron diffraction

Raman spectroscopy and neutron diffraction were used to study the stresses generated in zirconium diboride–silicon carbide (ZrB₂–SiC) ceramics. Dense, hot pressed samples were prepared from ZrB₂ containing 30 vol% α-SiC particles. Raman patterns were acquired from the dispersed SiC particulate phase within the composite and stress values were calculated to be 810 MPa. Neutron diffraction patterns were acquired for the ZrB₂–SiC composite, as well as pure ZrB₂ and SiC powders during cooling from ～1800 °C to room temperature. A residual stress of 775 MPa was calculated as a function of temperature by comparing the lattice parameter values for ZrB₂ and SiC within the composite to those of the individual powders. The temperature at which stresses began to accumulate on cooling was found to be ～1400 °C based on observing the deviation in lattice parameters between pure powder samples and those of the composite.     

Effect of processing on the microstructure and crystalline phase composition of wood derived porous SiC ceramics

Pine (Pinus silvestris) wood samples were dried and impregnated with a SiO₂ sol from a sol–gel process. The impregnation involved a two step process in a custom-made apparatus. Impregnated samples were dried and pyrolised at 500 °C under an oxygen-free atmosphere. SiC synthesis was performed in a high-temperature furnace in an argon atmosphere at a temperature of 1600 °C for 2, 4 and 8 h. The samples were investigated with X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The changes in the SiC synthesis time at the maximum temperature lead to changes in the microstructure and crystalline phase composition. An increase in the synthesis time opens up the possibility to produce mainly α-SiC crystalline modification containing porous SiC ceramics.     

Preparation and characterization of porous,biomorphic SiC ceramic with hybrid pore structure

Bio-carbon template (charcoal) was prepared by carbonizing pine wood at 1200 °C under vacuum, and was impregnated with phenolic resin/SiO₂ sol mixture by vacuum/pressure processing. Porous SiC ceramics with hybrid pore structure, a combination of tubular pores and network SiC struts in the tubular pores, were fabricated via sol–gel conversion, carbonization and carbothermal reduction reaction at elevated temperatures in Ar atmosphere. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR) and scanning electron microscope (SEM) were employed to characterize the phase identification and microstructural changes during the C/SiO₂ composites-to-porous SiC ceramic conversion. Experimental results show that the density of C/SiO₂ composite increases with the number of impregnation procedure, and increases from 0.32 g cm⁻³ of pine-derived charcoal to 1.5 g cm⁻³ of C/SiO₂ composite after the sixth impregnation. The conversion degree of charcoal to porous SiC ceramic increases as reaction time is lengthened. The resulting SiC ceramic consists of β-SiC with a small amount of α-SiC. The conversion from pine charcoal to porous SiC ceramic with hybrid pore structure improves bending strength from 16.4 to 42.2 MPa, and decreases porosity from 76.1% to 48.3%.     

Electrical resistivity of α-SiC ceramics sintered with Al2O3 or AlN additives

Highly resistive SiC ceramics were prepared by hot pressing α-SiC powders with Al₂O₃-Y₂O₃ additives with a 4:1 molar ratio. X-ray diffraction patterns, Raman spectra, electron probe microanalysis (EMPA), and scanning electron microscopy (SEM) images revealed that the bulk SiC ceramics consisted mostly of micron-sized 6H-SiC grains along with Y₂O₃ and Si clusters. As the additive content increased from 1 to 10 vol%, the electrical resistivity of the ceramics increased from 3.0 × 10⁶ to 1.3 × 10⁸ Ω cm at room temperature. Such high resistivity is ascribed to Al₂O₃ in which Al impurities substituting Si site act as deep acceptors for trapping carriers. More resistive α-SiC ceramics were produced by adding AlN instead of Al₂O₃. The highest resistivity (1.3 × 10¹⁰ Ω cm) was achieved by employing 3 vol% AlN-Y₃Al₅O₁₂ (yttrium aluminum garnet, YAG) as an additive.     

High temperature erosion behavior of spark plasma sintered ZrB2-SiC composites

Damage of structural components of hypersonic vehicles by atmospheric particles demands thorough understanding on their wear behavior. In the present work, dense ZrB₂-SiC (10, 20, and 30 vol%) composites are prepared by spark plasma sintering at 55 MPa in two stages: 1400 °C for 6 min followed by 1600 °C for 2 min. With increase in SiC content, microstructures of sintered composites reveal strongly bonded ZrB₂ grains with SiC particles. A combination of maximum hardness of 23 GPa, elastic modulus of 398 GPa and fracture toughness of 5.4 MPa m^1/2 are obtained for the composite containing 30 vol% SiC particles. It is found that cracks are bridged or deflected by SiC particles in the composites. When the composites are subjected to SiC particle erosion at 800 °C, a 14% decrease in erosion rate is obtained with increase in SiC content from 10 to 30 vol%. The formation of large extent of boro-silicate rich viscous surface on eroded surfaces is attributed to reduced fracture or removal of ZrB₂ grains of the composites with increased SiC content.     

Pressureless sintering of beta silicon carbide nanoparticles

This study reports the pressureless sintering of cubic phase silicon carbide nanoparticles (β-SiC). Green blended compounds made of SiC nano-sized powder, a fugitive binder and a sintering agent (boron carbide, B₄C), have been prepared. The binder is removed at low temperature (e.g. 800 °C) and the pressureless sintering studied between 1900 and 2100 °C. The nearly theoretical density (98% relative density) was obtained after 30 min at 2100 °C.The structural and microstructural evolutions during the heat treatment were characterised. The high temperatures needed for the sintering result in the β-SiC to α-SiC transformation which is revealed by the change of the composite microstructure. From 1900 °C, dense samples are composed of β-SiC grains surrounding α-SiC platelets in a well-defined orientation.TEM investigations and calculation of the activation energy of the sintering provided insight to the densification mechanism.     

Preparation of B4C composites toughened by TiB2-SiC agglomerates

High-performance B₄C composites toughened by TiB₂-SiC agglomerates were fabricated via reactive hot pressing with B₄C, TiC and Si as raw materials. The TiB₂-SiC composite serves as a composite toughening phase formed in the B₄C matrix through an in situ reaction; its agglomerates are composed of interlocked TiB₂ and SiC, which can remarkably improve the toughness of the B₄C composites. The Vickers hardness, flexural strength and fracture toughness of the B₄C-TiB₂-SiC composite reached 35.18 ± 0.45 GPa, 567 ± 14 MPa, and 6.38 ± 0.18 MPa m^1/2 respectively. The special toughening structure of the TiB₂-SiC composite introduced into B₄C ceramics was evaluated for the first time in this study.     

Effect of recoating slurry compositions on the microstructure and properties of SiC reticulated porous ceramics

Silicon carbide reticulated porous ceramics (SiC RPCs) were fabricated by polymer sponge replica technique, followed by recoating with SiC slurries of two different sintering additives of MgO–Al₂O₃–SiO₂ (Slurry 1) and polycarbosilane (Slurry 2). The sintering temperature of SiC RPCs recoated with Slurry 2 was 1100 °C, which was 200 °C lower than that for one recoated with Slurry 1. The prepared SiC RPCs exhibited homogeneous microstructure and contained pores with different sizes which was entrapped in the strut of SiC RPCs, small pores with diameter lower than 4 μm and large pores with diameter higher than 10 μm. Bending strength of SiC RPCs recoated with Slurry 1 was two times higher than that for the non-recoated samples, which was 1.88 MPa and was a little higher than that for one recoated with slurry 2. At the same time, high thermal shock resistance and high refractoriness were achieved for SiC RPCs recoated with Slurry 2.     

Highly resistive SiC ceramics sintered with Al2O3-AlN-Y2O3 additions

A polycrystalline SiC ceramic prepared by pressureless sintering of α-SiC powders with 3 vol% Al₂O₃-AlN-Y₂O₃ additives in an argon atmosphere exhibited a high electrical resistivity of ~10¹³ Ω cm at room temperature. X-ray diffraction revealed that the SiC ceramics consisted mainly of 6H- and 4H-SiC polytypes. Scanning electron microscopy and high resolution transmission electron microscopy investigations showed that the SiC specimen contained micron-sized grains surrounded by an amorphous Al-Y-Si-O-C-N film with a thickness of ~4.85 nm. The thick boundary film between the grains contributed to the high resistivity of the SiC ceramic.     

Fabrication of SiCw reinforced ZrB2-based ceramics

ZrB₂-based ceramics with SiC_w were produced by hot pressing at 1750 °C for 1 h from mixed powders after adding liquid polycarbosilane. The obtained ZrB₂-SiC_w composites had toughness up to 7.57 MPa m^1/2, which was much higher than those for monolithic ZrB₂, SiC particles reinforced ZrB₂ composites, and other ZrB₂–SiC_w composites directly sintered at high temperatures. The added liquid polycarbosilane could reduce the sintering temperatures and restrict the reaction of matrix with whisker, which led to fewer damages to the whisker and high fracture toughness.     

Mechanical behavior of zirconium diboride–silicon carbide ceramics at elevated temperature in air

The mechanical properties of zirconium diboride–silicon carbide (ZrB₂–SiC) ceramics were characterized from room temperature up to 1600 °C in air. ZrB₂ containing nominally 30 vol% SiC was hot pressed to full density at 1950 °C using B₄C as a sintering aid. After hot pressing, the composition was determined to be 68.5 vol% ZrB₂, 29.5 vol% SiC, and 2.0 vol% B₄C using image analysis. The average ZrB₂ grain size was 1.9 μm. The average SiC particles size was 1.2 μm, but the SiC particles formed larger clusters. The room temperature flexural strength was 680 MPa and strength increased to 750 MPa at 800 °C. Strength decreased to ～360 MPa at 1500 °C and 1600 °C. The elastic modulus at room temperature was 510 GPa. Modulus decreased nearly linearly with temperature to 210 GPa at 1500 °C, with a more rapid decrease to 110 GPa at 1600 °C. The fracture toughness was 3.6 MPa·m^½ at room temperature, increased to 4.8 MPa·m^½ at 800 °C, and then decreased linearly to 3.3 MPa·m^½ at 1600 °C. The strength was controlled by the SiC cluster size up to 1000 °C, and oxidation damage above 1200 °C.     

Effect of the sintering additive content on the non-protective oxidation behaviour of pressureless liquid-phase-sintered α-SiC in air

The long-term oxidation resistance of pressureless liquid-phase-sintered (PLPS) α-SiC was investigated as a function of the content of sintering additive (in particular, YAG) at 1500 °C in air. It is shown that, regardless of the vol.% YAG, the oxidation is passive at that high temperature, with a kinetics given by the paralinear-rate law. This is because the oxide scales grow due to oxidation of the SiC grains, but recede due to the formation of a eutectic phase and to the carbothermal reduction of YAG. It is also shown that the oxidation resistance of PLPS SiC decreases markedly with increasing vol.% YAG, an effect that is especially marked above 7.3 vol.% YAG where a change in oxidation behaviour occurs. Thus, while up to 7.3 vol.% YAG the PLPS SiC ceramics gain mass during the entire oxidation process (500 h) because the oxide scales are at least semi-protective, from 11.1 vol.% YAG onwards the PLPS SiC ceramics first gain mass and then lose mass linearly over oxidizing time because the oxide scales are non-protective. Finally, implications for the design of PLPS SiC ceramics that can tolerate prolonged exposures at high temperatures in air are discussed.     

Al2O3–SiC composites prepared by warm pressing and sintering of an organosilicon polymer-coated alumina powder

Al₂O₃/SiC micro/nano composites were prepared by axial pressing of poly(allyl)carbosilane-coated submicrometre alumina powder at elevated temperature (called also warm pressing, or plastic forming) with subsequent pressureless sintering in the temperature interval between 1700 and 1850 °C. Warm pressing at 350 °C and 50 MPa resulted in green bodies with high mechanical strength and with markedly higher density than in green bodies prepared by cold isostatic pressing of the same powder at 1000 MPa. The sintering of warm pressed specimens moreover yielded the composites with higher final density (less than 4% of residual porosity) with the microstructure composed of micrometer-sized alumina grains (D₅₀ < 2 μm) with inter- and intragranular SiC precipitates. High sintering temperatures (>1800 °C) promoted the formation of intergranular platelets identified by TEM as 6H polytype of α-SiC. The maximum hardness (19.4 ± 0.5 GPa) and fracture toughness (4.8 ± 0.1 MPa m^1/2) were achieved in the composites containing 8 vol.% of SiC, and sintered for 3 h at 1850 °C. These values are within the limits reported for nanocomposites Al₂O₃/SiC by other authors and do not represent any significant improvement in comparison to monolithic alumina.