Electron-assisted deposition of cubic boron nitride by r.f. magnetron sputtering

Cubic boron nitride (cBN) has been deposited on silicon (100) substrates by means of radio frequency (r.f.) magnetron sputtering in nitrogen using a hexagonal boron nitride target with the assistance of a simultaneous electron bombardment of the growing surface. Unlike most thin-film deposition processes for cBN, intentional bombardment of the growing surface by ion beams within specific ranges in energy and flux is not required for this process to achieve high-purity cBN films. Fourier transform infra-red (FTIR) spectra of cBN films show a strong absorption band around 1070 cm⁻¹. With electrons bombarding the growing surface at a current density of 140 mA cm⁻² or higher, pure (according to FTIR spectra) cBN films are deposited on silicon substrates at temperatures above 750°C. The effects of electron current density and nitrogen gas pressure on the synthesis of cBN films will be discussed.     

Polarization behavior of seedless ZnO nanocolumnars grown by DC-unbalanced magnetron sputtering

The main reason ZnO is attractive for optoelectronic applications is its polarization behavior, which can modify its optical and electronic properties. Here, the polarization of ZnO is highly dependent on its structure and morphology. We study the polarization behavior of ZnO with different structures and morphology. A seedless ZnO nanocolumnars (ZnO NCs) array is fabricated using DC-unbalanced magnetron sputtering (DC-UBMS) with further thermal annealing treatment. Thermal annealing transforms the cone-like ZnO NCs to become rod-like ZnO NCs and significantly reduces the intensity of the crystal plane (002). Thermal annealing changes the polarization, where the annealed-ZnO 600°C exhibits the highest polarization that promotes the increase in lattice constant c and crystallite size. We found a football-like polarization response without saturation polarization, which indicates a presence of leakage current and defect on the samples. Interestingly, a ferroelectric characteristic is observed in annealed-ZnO 800°C with lower polarization than the annealed-ZnO 600°C. The origin of ferroelectricity is further investigated using a comprehensive study. This study provides a new understanding of polarization behavior on ZnO NCs, which is the essential key in designing switchable and non-volatile-based devices.     

Atomic force microscopy investigation of the effects of annealing on amorphous carbon nitride films deposited by r.f. magnetron sputtering

Atomic force microscopy is used to study the effects of thermal annealing on the surface topography and the tribological properties of amorphous carbon nitride thin films deposited by r.f. magnetron sputtering. The results show that the surface roughness decreases with increasing annealing temperature. The friction coefficients at the interface between a Si₃N₄ tip and the amorphous carbon nitride films surface decrease with increasing smoothness of the surface.     

Micromechanical and microtribological properties of BCN thin films near the B4C composition deposited by r.f. magnetron sputtering

Ternary materials with compositions in the B–C–N system offer properties of great interest. In particular, mechanical and tribological properties are expected to be excellent, as they can combine some of the specific properties of BN, B₄C and C₃N₄. In this paper, BCN thin films deposited by r.f. magnetron sputtering are characterized by their micromechanical and microtribological behavior. BCN coatings with different composition were obtained by varying the N₂/Ar proportion in the sputtering gas. Hardness and elastic modulus of the coatings were measured by nanoindentation. The adhesion and friction coefficient against diamond have been evaluated by microscratch and the coatings have been characterized in their wear behavior at the nanometric scale. These mechanical and tribological properties have been related to film composition and structure, which have been studied in a previous work. It is found that the measured wear resistance at the nanometric scale is directly related to the coating microhardness rather than friction behavior or adhesion of the coating to the substrate, which are the determinant factors in the macroscopic scale wear behavior.     

Microstructural and optical properties of Ta-doped ZnO films prepared by radio frequency magnetron sputtering

Ta-doped ZnO films with different doping levels (0–5.02 at%) were prepared by radio frequency magnetron sputtering. The effects of the doping amount on the microstructure and the optical properties of the films were investigated. The grain size and surface roughness first significantly decrease and then slowly increase with the increase of Ta doping concentration. Both the grain size and the root mean square (RMS) roughness reach their minimum values at the doping content of 3.32 at%. X-ray Diffraction (XRD) patterns confirmed that the prepared Ta-doped ZnO films are polycrystalline with hexagonal wurtzite structure and a preferred orientation along the (002) plane. X-ray photoelectron spectroscopy (XPS) analysis reveals that Ta exists in the ZnO film in the Ta⁵⁺ and Ta⁴⁺ states. The average optical transmission values of the Ta-doped ZnO films are higher than those of the un-doped ZnO film in the visible region. The band gap energy extracted from the absorption edge of transmission spectra becomes large and the near band edge (NBE) emission energy obtained from PL spectra blueshifts to high energy when the Ta doping content grows from 0 at% to 5.02 at%, which can be explained by the Burstein–Moss shift.     

Influence of ZnO buffer layer on AZO film properties by radio frequency magnetron sputtering

Transparent conductive films of Al-doped zinc oxide (AZO) were deposited on glass substrates under various ZnO buffer layer deposition conditions (radio frequency (r.f.) power, sputtering pressure, thickness, and annealing) using r.f. magnetron sputtering at room temperature. This work investigates the influence of ZnO buffer layer on structural, electrical, and optical properties of AZO films. The use of grey-based Taguchi method to determine the ZnO buffer layer deposition processing parameters by considering multiple performance characteristics has been reported. Findings show that the ZnO buffer layer improves the optoelectronic performances of AZO films. The AZO films deposited on the 150-nm thick ZnO buffer layer exhibit a very smooth surface with excellent optical properties. Highly c-axis-orientated AZO/ZnO/glass films were grown. Under the optimized ZnO buffer layer deposition conditions, the AZO films show lowest electrical resistivity of 6.75 × 10⁻⁴ Ω cm, about 85% optical transmittance in the visible region, and the best surface roughness of R_a = 0.933 nm.     

Improved physical properties of Al-doped ZnO thin films deposited by unbalanced RF magnetron sputtering

Room temperature Al-doped ZnO (AZO) thin films with improved crystalline and optical properties were grown on normal glass substrates using unbalanced RF magnetron sputtering technique. To modify the plasma density towards the substrate and enhance the crystalline nature, an additional magnetic field ranging from 0 to 6.0 mT has been applied to the AZO target by proper tuning of solenoid coil current from 0 to 0.2 A respectively, which plays a significant role for controlling the physical properties of AZO films. The results from XRD studies indicate that all AZO films were composed of hexagonal wurtzite structure with better crystal quality through the applied magnetic field, ZnO (002) plane as a preferred growth. Furthermore, XPS studies suggested that symmetric chemical shifts in the binding energies for the Zn 2p and O1s levels with applied magnetic field. SEM analysis revealed the formation of a smooth, homogeneous and dense morphological surface with applied magnetic field. From AFM analysis, it was observed that the applied magnetic field strongly influenced the grain size and the films showed decreasing tendency in electrical resistivity. Films exhibited superior optical transmittance more than 94% in the visible region essentially due to the formation of better crystalline nature. The results indicate that improved band gap from 3.10 to 3.15 eV with additional magnetic field varied from 0 to 6.0 mT respectively.     

Characterization of luminescent properties of ZnO:Er thin films prepared by rf magnetron sputtering

ZnO:Er thin films were deposited on c-plane sapphire substrates by rf magnetron sputtering and annealed at 700 °C under air and H₂ atmospheres for the luminescent improvement. The effects of sputtering parameters and the annealing conditions on visible and 1.54 μm IR emissions were investigated. Structural and luminescent properties strongly depended on the deposition conditions and annealing atmospheres. By tuning the excitation wavelength, ZnO:Er thin films exhibited a strong emission band at around 465 nm and a weak emission at 525 nm originated from the energy transition of ⁴I_15/2–⁴F_5/2 and ⁴I_15/2–²H_11/2, respectively, while 1.54 μm IR emissions due to ⁴I_15/2–⁴I_13/2 transition.     

Physical properties of Al-doped ZnO films deposited on nonwoven substrates by radio frequence magnetron sputtering

In this study, the polyethylene terephthalate (PET) spunbonded nonwoven materials were used as substrates for creating electro-optical functional nanostructures on the fiber surfaces. A magnetron sputter coating was used to deposit Al-doped ZnO (AZO) films onto the nonwovens. The influences of the deposition time on the structural, optical, and electrical properties of AZO films were investigated. Atomic force microscopy (AFM) was employed to examine the topography of the fibers. The AFM observation revealed a significant difference in the morphology of the fibers before and after the AZO sputter coating. The examination by UV–visible spectrophotometer analysis showed that the nonwovens deposited with transparent nanostructure AZO films had better UV absorption, and an average transmittance was approximately 50% in the visible light wavelength region. The surface conductivity of the materials was analyzed using a four-probe meter, and it was found that electrical resistance was significantly decreased as the sputtering time increased.     

Influence of postdeposition annealing on the properties of ZnO films prepared by RF magnetron sputtering

ZnO films were prepared on unheated silicon substrate by RF magnetron sputtering technique. Postdeposition annealing of ZnO films in vacuum were found to improve film structure and electrical characteristics, such as dense structure, smooth surface, stress relief and increasing resistivity. Suitable annealing temperature also reduced loss factor. The correlation between annealing conditions and the physical structure of the films (crystalline structure and microstructure) was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The preferred annealing condition has been found to improve ZnO film characteristics for piezoelectric applications. An over-mode acoustic resonator using the ZnO film after annealing at 400 °C in vacuum circumstance for 1 h showed a large return loss of 42 dB at the center frequency of 1.957 GHz.     

Thermochromic properties of ZnO/VO2/ZnO films on soda lime silicate glass deposited by RF magnetron sputtering

A smart window based on VO₂ is a promising thermochromic (TC) glass that can regulate heat flow through windows by solar modulation near room temperature. TC glasses with high visible-light transmittance and large difference in infrared transmittance between high- and low-temperature VO₂ phases are required to save large amounts of energy in buildings. VO₂-based multilayer films with a buffer layer and/or an anti-reflective (AR) layer are used when the films are deposited by sputtering. In this study, VO₂-based multilayer films were prepared on soda lime glass using ZnO as both the buffer and the AR layers. The structure of the multilayer film was simulated using the optical constants measured from the deposited films. The effect of buffer and AR layers on the TC properties of VO₂-based multilayer films prepared by sputtering was investigated by simulation of the multilayer structure and deposition of the films with the simulated structure. The TC properties were measured and compared with the calculated properties. Improved TC properties (luminous transmittance (T_lum) of ～50%/46% (30 °C/80 °C) and solar modulation ability (ΔT_sol) of ～14%), compared to those without the buffer and AR layer, were obtained from the ZnO/VO₂/ZnO film deposited on glass. The calculated transmittances agree better with the measured ones when the optical constants measured directly from the deposited films are used and the roughnesses of the surface/interface of the multilayer films are considered in the calculation of the optical constants.     

Different nanostructures identified in boron nitride thin films grown on Si (100) by rf magnetron sputtering

Boron nitride (BN) thin films grown on Si (100) substrates by radio frequency magnetron sputtering, with varying growth parameters, are studied by high-resolution transmission electron microscopy (HRTEM). The HRTEM study reveals the presence of several interesting nanostructures in the BN films. Nanotube-like configurations, nanoarches and nanohorns are observed, as well as well-orientated cubic BN nanocrystals. It is found that several configurations of the turbostratic BN planes (properly orientated or curved) can act, in the same film, as nucleation sites for the growth of the cubic phase.     

Heteroepitaxial growth of TiN film on MgO (100) by reactive magnetron sputtering

TiN thin films were deposited on MgO (100) substrates at different substrate temperatures using rf sputtering with Ar/N₂ ratio of about 10. At 700°C, the growth rate of TiN was approximately 0.05 μm/h. The structural and electrical properties of TiN thin films were characterized with x-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Hall measurements. For all deposition conditions, XRD results show that the TiN films can be in an epitaxy with MgO with cube-on-cube orientation relationship of (001)_TiN // (001)_MgO and [100]_TiN // [100]_MgO. TEM with selected-area electron diffraction pattern verifies the epitaxial growth of the TiN films on MgO. SEM and AFM show that the surface of the TiN film is very smooth with roughness approximately 0.26 nm. The minimum resistivity of the films can be as low as 45 μΩ cm.     

直流溅射ITO薄膜光电性能研究

采用直流溅射法制备了高性能的ITO薄膜。结果表明,氧气分压比和衬底温度对薄膜的方阻、可见光透射率具有重要的影响。其最佳值分别为0.5/50和350℃;同时,随着膜厚的增加,薄膜的晶粒增大,导电率也相应降低。     

Deposition of bioactive glass-ceramic thin-films by RF magnetron sputtering

Thin films of bioactive glass-ceramics have been deposited on titanium and silicon substrates by RF magnetron sputtering. The crystalline phases and the microstructure of the films have been characterized using XRD and SEM analysis; the main phases present were calcium–magnesium phosphates, enstatite and forsterite. The adhesion of the films on titanium has been examined by pull-off testing; the adhesion strength for as-deposited films was around 40 MPa, but after crystallization the strength dropped to about half this value due to the presence of cracks. Samples kept in simulated body fluid showed an apatite-like layer, suggesting that the films are bioactive.     

Electrochemical properties of boron-carbon-nitride films formed by magnetron sputtering

The electrochemical behavior of B_1.0C_2.4N_1.0 thin film was investigated in acidic, neutral and alkaline solutions. The anodic polarization curve of the film in 1 M NaOH showed the anodic dissolution of the film. The curve of the film in 1 M HCl showed no anodic dissolution. The cathodic polarization curve in 1 M NaCl showed shift to a negative potential side, but the anodic polarization curve was the same as that of Pt. The anodic dissolution in 1 M NaOH depended on potentials, that is, no anodic dissolution was recognized in a potential range of −0.2 to 0.1 V but the dissolution rate increased with increasing potential in a range of 0.1-0.6 V. The anodic current density of the film is directly proportional to the dissolution rate at potentials higher than 0.1 V. The dissolution rate of the film was increased with increasing solution pH.     

Mechanical characterization of ultra-thin fluorocarbon films deposited by R.F. magnetron sputtering

Fluorocarbon films were deposited on silicon substrate by R.F. magnetron sputtering using a polytetrafluoroethylene (PTFE) target. Structure of the deposited films was studied by X-ray photoelectron spectroscopy (XPS). Hardness, elastic modulus and scratch resistance were measured using a nanoindenter with scratch capability. -CF_x (x = 1, 2, 3) and C-C units were found in the deposited fluorocarbon films. The hardness and elastic modulus of the films are strongly dependent on the R.F. power and deposition pressure. The film hardness is in the range from 0.8 GPa to 1.3 GPa while the film elastic modulus is in the range from 8 GPa to 18 GPa. Harder films exhibit higher scratch resistance. Differences in nanoindentation behavior between the deposited fluorocarbon films, diamond-like carbon (DLC) films and PTFE were discussed. The fluorocarbon films should find more applications in the magnetic storage and micro/nanoelectromechanical systems.     

The optical and electrical properties of ZnO:Al thin films deposited at low temperatures by RF magnetron sputtering

Several ZnO:Al thin films have been successfully deposited on glass substrates at different substrate temperatures by RF (radio frequency) magnetron sputtering method. Effects of the substrate temperatures on the optical and electrical properties of these ZnO:Al thin films were investigated. The UV–VIS–NIR spectra of the ZnO:Al thin films revealed that the average optical transmittances in the visible range are very high, up to 88%. X-ray diffraction results showed that crystallization of these films was improved at higher substrate temperature. The band gaps of ZnO:Al thin films deposited at 25 ℃, 150 ℃, 200 ℃, and 250 ℃ are 3.59 eV, 3.55 eV, 3.53 eV, and 3.48 eV, respectively. The Hall-effect measurement demonstrated that the electrical resistivity of the films decreased with the increase of the substrate temperature and the electrical resistivity reached 1.990×10^?3 Ω cm at 250 ℃.     

Room temperature preparation of c axis oriented ZnO films on Si(100), SiO2, and ZnO substrates by rf magnetron sputtering

Abstract

Growth of ZnO thin films with c axis (002) orientation has been demonstrated at room temperature on Si(100), SiO₂, and amorphous ZnO substrates by the rf magnetron sputtering method. The structural properties of the ZnO thin films were investigated with varying rf power. X-ray diffraction analysis revealed that increasing rf power helped to increase the c axis lattice constant and grain size, regardless of substrate material. Scanning electron microscopy indicated that the structural morphology of the ZnO films was not dependent on the substrate material.