ZnO纳米棒水热法生长与表征

采用两步法在FTO导电玻璃衬底上制备ZnO纳米棒,首先利用浸渍-提拉法在FTO导电玻璃衬底上制备ZnO晶种层,然后把有ZnO晶种层的FTO衬底放入盛有生长溶液的反应釜中利用水热法制备ZnO纳米棒.研究了生长溶液的浓度、生长温度和生长时间对所制备的对ZnO纳米棒阵列的微结构和光致发光性能的影响,利用X射线衍射(XRD)、扫描电子显微镜(SEM)和光致发光谱(PL)研究了ZnO样品的结构、形貌和光学性质.实验结果表明:所制备的ZnO纳米棒呈现六方纤锌矿结构,沿(002)晶面择优取向生长,纳米棒的平均直径约为100 nm,长度约为2.5 μm.所制备的ZnO纳米棒在390 nm附近具有很强的紫外发光峰和在550 nm附近有较弱的宽绿光发光峰.     

水热合成法制备ZnO纳米棒有序阵列薄膜

采用水热合成法在预先生长的ZnO种子层的玻璃衬底上制备出ZnO纳米棒有序阵列薄膜。通过X射线衍射、扫描电镜、透射电镜和选区电子衍射分析表明：所制备的薄膜由垂直于ZnO种子层的纳米棒组成,呈单晶六角纤锌矿ZnO结构,且沿[001]方向择优生长,纳米棒的平均直径和长度分别为10．0nm和3．3μm。     

Selective Growth of Vertical-aligned ZnO Nanorod Arrays on Si Substrate by Catalyst-free Thermal Evaporation

By thermal evaporation of pure ZnO powders, high-density vertical-aligned ZnO nanorod arrays with diameter ranged in 80–250 nm were successfully synthesized on Si substrates covered with ZnO seed layers. It was revealed that the morphology, orientation, crystal, and optical quality of the ZnO nanorod arrays highly depend on the crystal quality of ZnO seed layers, which was confirmed by the characterizations of field-emission scanning electron microscopy, X-ray diffraction, transmission electron microscopy, and photoluminescence measurements. For ZnO seed layer with wurtzite structure, the ZnO nanorods grew exactly normal to the substrate with perfect wurtzite structure, strong near-band-edge emission, and neglectable deep-level emission. The nanorods synthesized on the polycrystalline ZnO seed layer presented random orientation, wide diameter, and weak deep-level emission. This article provides a C-free and Au-free method for large-scale synthesis of vertical-aligned ZnO nanorod arrays by controlling the crystal quality of the seed layer.     

Controllable size and photoluminescence of ZnO nanorod arrays on Si substrate prepared by microwave-assisted hydrothermal method

High-quality ZnO nanorod arrays were grown on silicon substrates by microwave-assisted hydrothermal method. A ZnO seed layer deposited by magnetron sputtering was used for promoting nanorod growth. Process optimization indicates that the size and surface density of nanorods can be controlled individually by varying process parameters including precursor concentration, heating temperature, and heating time. The photoluminescence performance of the nanorods is closely dependent on the mean size of the rods. Reducing rod diameter leads to decreased UV emission and visible emission intensity ratio, which has been attributed to the increased impurities or defects on the rod surface. The present results provide a feasible approach to modify the optical properties of transparent ZnO nanorod arrays.     

Fabrication and characterization of silicon wire solar cells having ZnO nanorod antireflection coating on Al-doped ZnO seed layer

In this study, we have fabricated and characterized the silicon [Si] wire solar cells with conformal ZnO nanorod antireflection coating [ARC] grown on a Al-doped ZnO [AZO] seed layer. Vertically aligned Si wire arrays were fabricated by electrochemical etching and, the p-n junction was prepared by spin-on dopant diffusion method. Hydrothermal growth of the ZnO nanorods was followed by AZO film deposition on high aspect ratio Si microwire arrays by atomic layer deposition [ALD]. The introduction of an ALD-deposited AZO film on Si wire arrays not only helps to create the ZnO nanorod arrays, but also has a strong impact on the reduction of surface recombination. The reflectance spectra show that ZnO nanorods were used as an efficient ARC to enhance light absorption by multiple scattering. Also, from the current-voltage results, we found that the combination of the AZO film and ZnO nanorods on Si wire solar cells leads to an increased power conversion efficiency by more than 27% compared to the cells without it.     

Farming of ZnO nanorod-arrays via aqueous chemical route for photoelectrochemical solar cell application

A low temperature aqueous chemical route is employed for the synthesis of zinc oxide (ZnO) nanorod arrays onto the soda lime and fluorine-doped tin oxide (FTO) coated glass substrates at various deposition times. Synthesis/farming of ZnO nanorod arrays (ZNRs) consists of the three-step as-ZnO seed forming, ZnO seed sowing followed by ZnO nanorod arrays growing. The length and diameter of ZnO nanorods increased with the reaction time prolonging. The physical, chemical and morphological properties were analyzed by means of X-ray diffraction (XRD), UV–visible spectroscopy (UV–vis), photoluminescence (PL), energy dispersive spectroscopy (EDS) and scanning electron microscopy (SEM) respectively. The XRD pattern revealed wurtzite crystal structures of ZNRs, preferentially orienting in the (002) direction. SEM micrographs show that the ZnO nanorods grew up perpendicular to the substrate and their length increases with increase in deposition time. Finally, the photoelectrochemical (PEC) performance of ZNRs thin films were studied. The junction quality factor upon illumination (n_l), series and shunt resistance (R_s and R_sh), flat-band-potential (V_FB), fill factor (FF) and efficiency (η) have been estimated.     

Seedless Pattern Growth of Quasi-Aligned ZnO Nanorod Arrays on Cover Glass Substrates in Solution

A hybrid technique for the selective growth of ZnO nanorod arrays on wanted areas of thin cover glass substrates was developed without the use of seed layer of ZnO. This method utilizes electron-beam lithography for pattern transfer on seedless substrate, followed by solution method for the bottom-up growth of ZnO nanorod arrays on the patterned substrates. The arrays of highly crystalline ZnO nanorods having diameter of 60 ± 10 nm and length of 750 ± 50 nm were selectively grown on different shape patterns and exhibited a remarkable uniformity in terms of diameter, length, and density. The room temperature cathodluminescence measurements showed a strong ultraviolet emission at 381 nm and broad visible emission at 585–610 nm were observed in the spectrum.     

Hydrothermal Growth of Vertical ZnO Nanorods

Vertically aligned, single crystalline ZnO nanorods with a high packing density and diameter of ∼60 nm have been successfully synthesized via a low-temperature hydrothermal route on glass substrates pre-deposited with a ZnO seeding layer. The seeding layer exhibits an epitaxial effect on the growth and alignment of the ZnO nanorods. This epitaxial effect can arise from two considerations, namely the crystalline orientation and surface roughness of the seeding layer, which can be controlled by the curing temperature. The ZnO seeding layer that was cured at 350°C exhibited a preferred (0002) crystalline orientation of wurtzite hexagonal structure and a low surface roughness. It was demonstrated to promote the vertical growth of ZnO nanorods. The ZnO nanorods grew in an almost linear relationship with hydrothermal time up to 8 h, but thereafter started to dissolve as the reaction time extended beyond 8 h, due to competition from the homogeneous nucleation of ZnO microparticles in the solution.     

Effect of ZnO seed layers on the solution chemical growth of ZnO nanorod arrays

High density ZnO nanorod arrays were grown on Si substrates coated with ZnO seed layers via aqueous solution route. The ZnO seed layers were deposited on the substrate using DC reactive sputtering and RF magnetron sputtering. It was found that ZnO seed layer with (1 0 3) preferred orientation, prepared using DC reactive sputtering, did not facilitate the formation of ZnO nanorods in the solution grown process. Prior seeding of the surface by ZnO layer with (0 0 2) preferred orientation, deposited using RF magnetron sputtering, leads to nucleation sites on which ZnO nanorod arrays can grow in a highly aligned fashion. ZnO nanorods with well-defined hexagonal facets (0 0 2) were grown almost vertically over the entire substrate. The uniformity and alignment of the nanorod arrays are strongly related to the properties of underneath ZnO seed layers.     

Growth and optical properties of ZnO nanorod arrays on Al-doped ZnO transparent conductive film

ZnO nanorod arrays (NRAs) on transparent conductive oxide (TCO) films have been grown by a solution-free, catalyst-free, vapor-phase synthesis method at 600°C. TCO films, Al-doped ZnO films, were deposited on quartz substrates by magnetron sputtering. In order to study the effect of the growth duration on the morphological and optical properties of NRAs, the growth duration was changed from 3 to 12 min. The results show that the electrical performance of the TCO films does not degrade after the growth of NRAs and the nanorods are highly crystalline. As the growth duration increases from 3 to 8 min, the diffuse transmittance of the samples decreases, while the total transmittance and UV emission enhance. Two possible nanorod self-attraction models were proposed to interpret the phenomena in the sample with 9-min growth duration. The sample with 8-min growth duration has the highest total transmittance of 87.0%, proper density about 75 μm⁻², diameter about 26 nm, and length about 500 nm, indicating that it can be used in hybrid solar cells.     

Room-temperature nonequilibrium growth of controllable ZnO nanorod arrays

In this study, controllable ZnO nanorod arrays were successfully synthesized on Si substrate at room temperature (approx. 25°C). The formation of controllable ZnO nanorod arrays has been investigated using growth media with different concentrations and molar ratios of Zn(NO₃)₂ to NaOH. Under such a nonequilibrium growth condition, the density and dimension of ZnO nanorod arrays were successfully adjusted through controlling the supersaturation degree, i.e., volume of growth medium. It was found that the wettability and electrowetting behaviors of ZnO nanorod arrays could be tuned through variations of nanorods density and length. Moreover, its field emission property was also optimized by changing the nanorods density and dimension.     

Growth temperature dependent properties of ZnO nanorod arrays on glass substrate prepared by wet chemical method

In this work, ZnO nanorod arrays were grown on glass substrate by the wet chemical method, and the effect of synthesis temperature on the properties was investigated. The grown nanorods were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman and Photoluminescence (PL) measurements. XRD pattern showed that nanorod prepared at 80 °C and 90 °C has high crystallinity with wurtzite structure and orientated along the c-axis. However, nanorods were not formed at 60 °C and 70 °C due to less energy supply for the growth of the ZnO. FE-SEM results showed that the morphology and the size of ZnO can be effectively controlled. In particular, as the temperature increased, diameter of the nanorod was increased while length decreased. Raman scattering spectra of ZnO nanorod arrays revealed the characteristic E₂^high mode that is related to the vibration of oxygen atoms in the wurtzite ZnO. Room-temperature PL spectra of the ZnO nanorods revealed a near-band-edge (NBE) emission peak. The NBE (UV light emission) band at ~383 nm might be attributed to the recombination of free exciton. The narrow full-width at half-maximum (FWHM) of the UV emission indicated that ZnO nanorods had high crystallinity.     

Growth of ZnO Nanorods by the Chemical Solution Method with Assisted Electrical Field

Zinc oxide (ZnO) nanorod arrays on the ZnO-coated seed substrates were prepared by the solution chemical method from Zn(NO₃)₂/NaOH under an assisted electrical field. The influence of the electrical field on ZnO nanorod growth was primarily explored, and the positive effects of the electrical field were demonstrated by adding polyethylene glycol in growth solution. It has been proved that the electrical field enhances ion adsorption to the substrate and lowers the nucleation energy barrier by increasing charge intensity; meanwhile, it produces H⁺ through oxidation of OH⁻ and increases properly the degree of solution supersaturation near the substrate surface. XRD results show that the nanorods grown under the electrical field primarily have a zincite structure. With increasing precursor concentration, the average diameter and length of ZnO nanorods increase. The maximum rod growth rate at a given concentration of Zn²⁺ ion occurs at a specific temperature.     

Highly Uniform Epitaxial ZnO Nanorod Arrays for Nanopiezotronics

Highly uniform and c-axis-aligned ZnO nanorod arrays were fabricated in predefined patterns by a low temperature homoepitaxial aqueous chemical method. The nucleation seed patterns were realized in polymer and in metal thin films, resulting in, all-ZnO and bottom-contacted structures, respectively. Both of them show excellent geometrical uniformity: the cross-sectional uniformity according to the scanning electron micrographs across the array is lower than 2%. The diameter of the hexagonal prism-shaped nanorods can be set in the range of 90–170 nm while their typical length achievable is 0.5–2.3 μm. The effect of the surface polarity was also examined, however, no significant difference was found between the arrays grown on Zn-terminated and on O-terminated face of the ZnO single crystal. The transmission electron microscopy observation revealed the single crystalline nature of the nanorods. The current–voltage characteristics taken on an individual nanorod contacted by a Au-coated atomic force microscope tip reflected Schottky-type behavior. The geometrical uniformity, the designable pattern, and the electrical properties make the presented nanorod arrays ideal candidates to be used in ZnO-based DC nanogenerator and in next-generation integrated piezoelectric nano-electromechanical systems (NEMS).     

Facile solution growth of vertically aligned ZnO nanorods sensitized with aqueous CdS and CdSe quantum dots for photovoltaic applications

Vertically aligned single crystalline ZnO nanorod arrays, approximately 3 μm in length and 50-450 nm in diameter are grown by a simple solution approach on a Zn foil substrate. CdS and CdSe colloidal quantum dots are assembled onto ZnO nanorods array using water-soluble nanocrystals capped as-synthesized with a short-chain bifuncional linker thioglycolic acid. The solar cells co-sensitized with both CdS and CdSe quantum dots demonstrate superior efficiency compared with the cells using only one type of quantum dots. A thin Al2O3 layer deposited prior to quantum dot anchoring successfully acts as a barrier inhibiting electron recombination at the Zn/ZnO/electrolyte interface, resulting in power conversion efficiency of approximately 1% with an improved fill factor of 0.55. The in situ growth of ZnO nanorod arrays in a solution containing CdSe quantum dots provides better contact between two materials resulting in enhanced open circuit voltage.     

CdSe nanocrystal sensitized ZnO core-shell nanorod array films: Preparation and photovoltaic properties

ZnO/CdSe core-shell nanorod array films were synthesized via a two-step method. ZnO nanorod array films were first grown on a TCO substrate, and then CdSe nanocrystals were deposited on the nanorods to form core-shell structured films. The resulting films were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and UV-vis absorption spectroscopy. Especially, dark-field images and transmission electron diffraction of the TEM were used to study the morphology and the chemical nanostructure of the ZnO/CdSe core-shell nanorods in detail. We investigated the photovoltaic performance of the resulting ZnO/CdSe core-shell nanorod array films as solar cell photoanodes. Parameters, such as the length of the ZnO nanorods, the shell phase structure and the deposition time of the CdSe nanocrystals were found to affect the photovoltaic performance of the solar cell. This study provides a facile method to prepare nanocomposite photoanodes of solar cells, and gives some insight about the fundamental mechanisms that improve the performance.     

Photocurrent detection of chemically tuned hierarchical ZnO nanostructures grown on seed layers formed by atomic layer deposition

We demonstrate the morphological control method of ZnO nanostructures by atomic layer deposition (ALD) on an Al₂O₃/ZnO seed layer surface and the application of a hierarchical ZnO nanostructure for a photodetector. Two layers of ZnO and Al₂O₃ prepared using ALD with different pH values in solution coexisted on the alloy film surface, leading to deactivation of the surface hydroxyl groups. This surface complex decreased the ZnO nucleation on the seed layer surface, and thereby effectively screened the inherent surface polarity of ZnO. As a result, a 2-D zinc hydroxyl compound nanosheet was produced. With increasing ALD cycles of ZnO in the seed layer, the nanostructure morphology changes from 2-D nanosheet to 1-D nanorod due to the recovery of the natural crystallinity and polarity of ZnO. The thin ALD ZnO seed layer conformally covers the complex nanosheet structure to produce a nanorod, then a 3-D, hierarchical ZnO nanostructure was synthesized using a combined hydrothermal and ALD method. During the deposition of the ALD ZnO seed layer, the zinc hydroxyl compound nanosheets underwent a self-annealing process at 150 °C, resulting in structural transformation to pure ZnO 3-D nanosheets without collapse of the intrinsic morphology. The investigation on band electronic properties of ZnO 2-D nanosheet and 3-D hierarchical structure revealed noticeable variations depending on the richness of Zn-OH in each morphology. The improved visible and ultraviolet photocurrent characteristics of a photodetector with the active region using 3-D hierarchical structure against those of 2-D nanosheet structure were achieved.     

A two-step route to synthesize highly oriented ZnO nanotube arrays

Large-scale and highly oriented ZnO nanotube arrays are synthesized on transparent conductive glass substrates by a two-step route. First, ZnO nanorod arrays were prepared by electrochemical deposition from an aqueous solution of zinc nitrate. Then, hollow ZnO nanotubes were obtained by the selective dissolution of the electrodeposited ZnO nanorods in potassium hydroxide solution. Field emission scanning electron microscopy (FESEM) and X-ray powder diffraction (XRD) have been used to characterize the morphology and structure of the derived products. The effect of the concentration of alkali, dissolution time, and temperature on the formation process and morphologies of ZnO nanotube arrays has been discussed.     

Effect of Metal Doped Zinc Oxide Nanorods on Photoelectrical Characteristics of ZnO/Polyaniline Heterojunction

The n-type vertically aligned metal doped ZnO nanorods (NRs) and p-type proton acid doped polyaniline (PANI) inorganic/organic heterojunction diodes have been fabricated. Aluminium (Al) and iron (Fe) doped ZnO NRs were grown on seed ZnO layer on fluorine doped tin oxide coated glass substrates by high temperature chemical bath deposition method. The elemental analysis using EDAX confirm doping of Al and Fe in ZnO. The morphology of doped ZnO nanorods and ZnO/PANI heterojunction exhibit well defined uniform nanorod arrays and interface between nanorods and polyaniline matrix respectively. The dark current–voltage curves confirmed the rectifying diode like behaviors of the heterojunctions, whereas under illumination, the junction revealed good sensitivity to UV and visible range with increased current densities. The highest ideality factor and lowest barrier height was found for FeZnO/PANI heterojunction under dark and under light compared to that of ZnO/PANI, AlZnO/PANI. This research is innovative with respect to low cost synthesis of efficient and sensitive hybrid p–n junction diodes and possibly serves as the building blocks for future optoelectronic applications.     

Broadband anti-reflective properties of grown ZnO nanopyramidal structure on Si substrate via low-temperature electrochemical deposition

Anti-reflection coatings (ARCs) are widely used in various optical and optoelectronic devices to minimize the reflection of light. In this study, we demonstrated the fabrication of ZnO nanopyramidal structures on Si substrate via low-temperature electrochemical deposition. We also investigated the anti-reflection (AR) properties of these nanostructures compared with nanorods and planar ZnO texture on Si substrates. We changed the growth conditions, namely, growth temperature and applied current density, to modify the shape of the ZnO nanorod tips. Nanopyramidal structures with continuously varying refractive index profiles in a single layer were obtained. Reflectance spectra show that the nanopyramid-based texture reduced the reflection of light in a broad spectral range from 380 nm to 1000 nm and is much more effective than nanorod and planar textures. For nanopyramid arrays (NPAs) with average tip diameter of 20 nm, we achieved a 6.5% reflectance over a wide range of wavelengths, which is superior to an optimized single-layer ARC such as SiO₂ or TiO₂. These textured ZnO ARCs may be applied to a wide variety of photovoltaic devices and other anti-reflection applications with large areas because of their low temperature, fast growth, and simple fabrication.