Facile synthesis of AlOx dielectrics via mist-CVD based on aqueous solutions

Aluminum oxide (AlO_x) thin films were synthesized by mist-chemical vapor deposition (mist-CVD) using aluminum acetylacetonate (Al(acac)₃) dissolved in an aqueous solvent mixture of acetone and water. Nitrogen gas was used to purge the precursor solution and growth rates between 7.5–13.3 nm/min were achieved at substrate temperatures of 250–350 °C. The AlO_x layers deposited at temperatures below 350 °C exhibit 3–5 at% residual carbon levels, however those grown at 350 °C exhibit only 1–2 at% carbon impurity. Reasonable dielectric properties were obtained in the latter, with a dielectric constant (κ) of ~ 7.0, breakdown field of ~ 9 MV/cm and relatively low leakage current density of ~ 8.3×10⁻¹⁰ A/cm².     

Structural and electrical properties of Sr2NaNb4O13 thin film grown by electrophoretic method using nanosheets synthesized from K(Sr2Na)Nb4O13 compound

Sr₂NaNb₄O₁₃⁻ (SNNO⁻) nanosheets were exfoliated from the K(Sr₂Na)Nb₄O₁₃ compound that was synthesized at 1200 °C. The SNNO⁻ nanosheets were deposited on a Pt/Ti/SiO₂/Si substrate at room temperature by the electrophoretic method. Annealing was conducted at various temperatures to remove organic defects in the SNNO film. A crystalline SNNO phase without organic defects was formed in the film annealed at 500 °C. However, a SrNb₂O₆ secondary phase was formed in the films annealed above 600 °C, probably due to the evaporation of Na₂O. The SNNO thin film annealed at 500 °C showed a dielectric constant of 74 at 1.0 MHz with a dielectric loss of 2.2%. This film also exhibited a low leakage current density of 9.0 × 10⁻⁸ A/cm² at 0.6 MV/cm with a high breakdown electric field of 0.72 MV/cm.     

Preparation and electrical properties of Bi2Zn2/3Nb4/3O7 thin films deposited at room temperature for embedded capacitor applications

Bi₂Zn_2/3Nb_4/3O₇ thin films were deposited at room temperature on Pt/Ti/SiO₂/Si(1 0 0) and polymer-based copper clad laminate (CCL) substrates by pulsed laser deposition. Bi₂Zn_2/3Nb_4/3O₇ thin films were deposited in situ with no intentional heating under an oxygen pressure of 4 Pa and then post-annealed at 150 °C for 20 min. It was found that the films are still amorphous in nature, which was confirmed by the XRD analysis. It has been shown that the surface roughness of the substrates has a significant influence on the electrical properties of the dielectric films, especially on the leakage current. Bi₂Zn_2/3Nb_4/3O₇ thin films deposited on Pt/Ti/SiO₂/Si(1 0 0) substrates exhibit superior dielectric characteristics. The dielectric constant and loss tangent are 59.8 and 0.008 at 10 kHz, respectively. Leakage current density is 2.5 × 10^?7 A/cm² at an applied electric field of 400 kV/cm. Bi₂Zn_2/3Nb_4/3O₇ thin films deposited on CCL substrates exhibit the dielectric constant of 60 and loss tangent of 0.018, respectively. Leakage current density is less than 1 × 10^?6 A/cm² at 200 kV/cm.     

Dielectric properties and electrical behaviors of tunable Bi1.5MgNb1.5O7 thin films

The Bi_1.5MgNb_1.5O₇ (BMN) thin films were prepared on Au-coated Si substrates by rf magnetron sputtering. We systematically investigated the structure, dielectric properties and voltage tunable property of the films with different annealing temperatures. The relationships of leakage current and breakdown bias field with annealing temperature were firstly studied and a possible explanation was proposed. The deposited BMN thin films had a cubic pyrochlore phase when annealed at 550 °C or higher. With the increasing of annealing temperature, the dielectric constant and tunability also went up. BMN thin films annealed at 750 °C exhibited moderate dielectric constant of 106 and low dielectric loss of 0.003–0.007 between 10 kHz and 10 MHz. The maximum tunability of 50% was achieved at a bias field of 2 MV/cm. However, thin films annealed at 750 °C had lower breakdown bias field and higher leakage current density than films annealed below 750 °C. The excellent physical and electrical properties make BMN thin films promising for potential tunable capacitor applications.     

Effects of Bi2O3–Li2CO3 additions on dielectric and pyroelectric properties of Mn doped Pb(Zr0.9Ti0.1)O3 thick films

Pb(Zr_0.9Ti_0.1)O₃ pyroelectric thick films adding various amounts of the sintering aids Bi₂O₃–Li₂CO₃ have been deposited on the substrates Al₂O₃ by the screen-printing process, and the dependence of microstructure, dielectric and pyroelectric properties on the content of sintering aids has been studied. When the amount of Bi₂O₃–Li₂CO₃ increases from 0 wt% to 5.4 wt%, the sintering temperature of the thick films decreases from 1100 °C to 900 °C, and the grain size and the lattice constant decrease either, but the density and the dielectric constant increase. The Pb(Zr_0.9Ti_0.1)O₃ thick film with 5.4 wt% of Bi₂O₃–Li₂CO₃ sintered at 900 °C has the maximum pyroelectric coefficient 10.51×10^?8 C/cm^?2 K^?1 and the highest figure-of-merit 10.58×10^?5 Pa^?0.5.     

The effect of solvent water content on the dielectric properties of Al2O3 films grown by atmospheric pressure mist-CVD

Aluminum oxide (Al₂O₃) dielectric layers were grown by a mist-chemical vapor deposition (mist-CVD) process at 300 °C, using solvent mixtures containing acetone and water. As the acetone to water ratio was varied from 9:1 to 7:3, the leakage current of Al₂O₃ at an electric field of 7 MV/cm² decreased from 9.0 × 10^?7 to 4.4 × 10^?10 A/cm², and the dielectric constant increased from 6.03 to 6.85 with improved hysteresis during capacitance-voltage measurements. Consequently, the most robust Al₂O₃ films were obtained at an acetone to water ratio of 7:3, with a dielectric constant (κ) close to the ideal value 7.0, and a breakdown field of approximately 9 MV/cm. Thin film transistors (TFTs) incorporating In-Sn-Zn-O (ITZO) as the semiconductor were fabricated with the Al₂O₃ (7:3) dielectric onto p⁺⁺-Si substrates. The devices exhibit high electrical performance, with a high field effect mobility of 42.7 cm²V^?1s^?1, and a small subthreshold swing (S.S.) value of 0.44 V/decade.     

Structural and electrical properties of sol–gel-derived Al-doped bismuth ferrite thin films

Al-doped BiFeO₃ (BiFe_(1?x)Al_xO₃) thin films with small doping content (x=0, 0.05, and 0.1) were grown on Pt(111)/TiO₂/SiO₂/Si substrates at the annealing temperature of 550 °C for 5 min in air by the sol–gel method. The crystalline structure, as well as surface and cross section morphology were studied by X-ray diffraction and scanning electron microscope, respectively. The dielectric constant of BiFeO₃ film was approximately 71 at 100 kHz, and it increased to 91 and 96 in the 5% and 10% Al-doped BiFeO₃ films, respectively. The substitution of Al atoms in BiFeO₃ thin films reduced the leakage current obviously. At an applied electric field of 260 kV/cm, the leakage current density of the undoped BiFeO₃ films was 3.97×10^?4 A/cm², while in the 10% Al-substitution BiFeO₃ thin films it was reduced to 8.4×10^?7 A/cm². The obtained values of 2P_r were 63 μC/cm² and 54 μC/cm² in the 5% and 10% Al-doped BiFeO₃ films at 2 kHz, respectively.     

Structural,thermal and electrical studies of a novel rubidium phosphite tellurate compound

Structural, thermal and electrical properties studies of rubidium phosphite tellurate, RbH(PO₃H)·Te(OH)₆, were performed. An endothermic peak, which reached a completion at about 315 °C accompanied with a weight loss of 4.6 wt.%, was attributed to dehydration. Four types of pellets were produced, namely pellets A, B, C and D. Pellet A was tested with platinum–carbon paper electrode, and pellets B, C and D were tested with gold electrodes. Both pellets A and B were studied from 113 °C to 317 °C for 135 h. Pellet C was first investigated from room temperature to 176 °C for 360 h. After cooling down to room temperature, a second measurement with pellet C was carried out under the same conditions as used for pellets A and B. Pellet D, on the other hand, was heated up to 450 °C, kept at that temperature for 2 h and then cooled down to room temperature prior to the conductivity measurements. It was observed that the conductivities of pellets A and B decreased to values of 5.2 × 10^?8 S cm^?1 and 6.6 × 10^?7 S cm^?1 at 317 °C, respectively, and an unexpected rise in the conductivity (9.89 × 10^?6 S cm^?1 at 317 °C) was seen with pellet C. Dehydration of RbH(PO₃H)·Te(OH)₆ might be responsible for this unexpected rise in the conductivity of pellet C. The monoprotic part RbH(PO₃H) of RbH(PO₃H)·Te(OH)₆ apparently became diprotic (Rb₂H₂P₂O₅) part of Rb₂H₂P₂O₅·[Te(OH)₆]₂ after dehydration. The measured conductivity of pellet D, which was dehydrated prior to the measurement, reached a value of 5.41 × 10^?5 S cm^?1 at 317 °C and showed a good stability over-each-run time and temperatures measurement up to 317 °C. The dehydrated compound, Rb₂H₂P₂O₅·[Te(OH)₆]₂, has also a higher hydrogen density relative to the starting compound, RbH(PO₃H)·Te(OH)₆. It is deduced that completion of the dehydration can be responsible for the unexpected rise in the conductivity of RbH(PO₃H)·Te(OH)₆. This unusual case is important for studies in solid acid proton conductors.     

Effect of substrate temperature on structural and electrical properties of BaZr0.2Ti0.8O3 lead-free thin films by pulsed laser deposition

Barium zirconate titanate (BaZr_0.2Ti_0.8O₃, BZT) 250 nm thick thin films were fabricated by pulsed laser deposition and the influence of the substrate temperature on their preferred orientation, microstructure, morphology and dielectric properties was investigated. Dielectric measurements indicated the (1 1 0)-oriented BZT thin films deposited at 750 °C to show good dielectric properties with high dielectric constant (~500 at 100 kHz), low loss tangent (<0.01 at 100 kHz), and superior tunability (>70% at 400 kV/cm), while the largest figure of merit was 78.8. The possible microstructural background responsible for the high dielectric constant and tenability is discussed. In addition, thin films deposited at 750 °C with device quality factor of 8738 and dielectric nonlinearity coefficient of 1.66×10⁻¹⁰ J/C⁴m⁵ were demonstrated.     

Enhanced ferroelectric properties of La-substituted BiFeO3 thin films on LaSrCoO3/Pt/TiO2/SiO2/Si (1 0 0) substrates prepared by the soft chemical method

Bi_0.85La_0.15FeO₃ (BLFO015) thin films were deposited by the polymeric precursor solution on La_0.5Sr_0.5CoO₃ substrates. For comparison, the films were also deposited on Pt bottom electrode. X-ray diffraction data confirmed the substitutions of La into the Bi site with the elimination of all secondary phases under a substitution ratio x = 15% at a temperature of 500 °C for 2 h. A substantial increase in the remnant polarization (P_r) with La_0.5Sr_0.5CoO₃ bottom electrode (P_r ≈ 34 μC/cm²) after a drive voltage of 9 V was observed when compared with the same film deposited on Pt substrate. The leakage current behavior at room temperature decreased from 10^?8 (Pt) to 10^?10 A/cm² on (La_0.5Sr_0.5CoO₃) electrode under a voltage of 5 V. The fatigue resistance of the Au/BLFO015/LSCO/Pt/TiO₂/SiO₂/Si (1 0 0) capacitors with a thickness of 280 nm exhibited no degradation after 1 × 10⁸ switching cycles at a frequency of 1 MHz.     

The effect of annealing on electrical properties of fluorinated amorphous carbon films

Fluorinated amorphous carbon (a–C:F) films have been deposited by electron cyclotron resonance chemical vapor deposition (ECR–CVD) at room temperature using C₄F₈ and CH₄ as precursor gases. The chemical compositions and electrical properties of a–C:F films have been studied by X-ray photoelectron spectroscopy (XPS), capacitance–voltage (C–V) and current-voltage (I–V) measurements. The results show that C–CF_x and C–C species of a–C:F films increase and fluorine content decreases after annealing. The dielectric constant of the annealed a–C:F films increases as a result of enhancement of film density and reduction of electronic polarization. The densities of fixed charges and interface states decrease from 1.6 × 10¹⁰ cm^− 2 and (5–9) × 10¹¹ eV^− 1 cm^− 2 to 3.2 × 10⁹ cm^− 2 and (4–6) × 10¹¹ eV^− 1 cm^− 2 respectively when a–C:F films are annealed at 300 °C. The magnitude of C–V hysteresis decreases due to reduced dangling bonds at the a–C:F/Si interfaces after heat treatment. The conduction of a–C:F films shows ohmic behavior at lower electric fields and is explained by Poole–Frankel (PF) mechanism at higher electric fields. The PF current increases indicative of reduced trap energy when a–C:F films are subjected to higher annealing temperatures.     

Ce0.9Gd0.1O1.95 supported La0.6Sr0.4Co0.2Fe0.8O3−δ cathodes for solid oxide fuel cells

Lanthanum-based iron- and cobalt-containing perovskite has a high potential as a cathode material because of its high electro-catalytic activity at a relatively low operating temperature in solid oxide fuel cells (SOFCs) (600–800). To enhance the electro-catalytic reduction of oxidants on La_0.6Sr_0.4Co_0.2Fe_0.8O_3?δ (LSCF), Ga doped ceria (Ce_0.9Gd_0.1O_1.95, GDC) supported LSCF (15LSCF/GDC) is successfully fabricated using an impregnation method with a ratio of 15 wt% LSCF and 85 wt% GDC. The cathodic polarization resistances of 15LSCF/GDC are 0.015 Ω cm², 0.03 Ω cm², 0.11 Ω cm², and 0.37 Ω cm² at 800 °C, 750 °C, 700 °C, and 650 °C, respectively. The simply mixed composite cathode with LSCF and GDC of the same compositions shows 0.05 Ω cm², 0.2 Ω cm², 0.56 Ω cm², and 1.20 Ω cm² at 800 °C, 750 °C, 700 °C, and 650 °C, respectively. The fuel cell performance of the SOFC with 15LSCF/GDC shows maximum power densities of 1.45 W cm^?2, 1.2 W cm^?2, and 0.8 W cm^?2 at 780 °C, 730 °C, and 680 °C, respectively. GDC supported LSCF (15LSCF/GDC) shows a higher fuel cell performance with small compositions of LSCF due to the extension of triple phase boundaries and effective building of an electronic path.     

Low-temperature fabrication of Ba1−xSrxTiO3 thin films with good dielectric properties on platinized silicon substrates

Ba_0.7Sr_0.3TiO₃ (BST) thin films 500 nm in thickness were prepared on technologically desirable Pt/TiO₂/SiO₂/Si(1 0 0) substrates by ion beam sputtering (IBS) and post-deposition annealing method. The effect of annealing temperature on the structural and dielectric properties of BST thin films was systematically investigated. A sharp transition in their tunable dielectric behaviours was observed in good agreement with the evolution of crystal structure from amorphous to crystalline phase. It was demonstrated that the perovskite phase could crystallize in BST films at a very low temperature, around 450 °C. The lowering of perovskite crystallization temperature in the BST films was explained in terms of the high energetic process nature of IBS technique. A high dielectric tunability of 42% at E (electric field intensity) = 500 kV/cm and a low loss tangent of 0.013 at zero bias were both obtained in the 450 °C-annealed film, thereby resulting in the highest figure-of-merit factor among all the different temperature annealed films. Moreover, the 450 °C-annealed film showed superior leakage current characteristics with a low leakage current density of about 10^?4 A/cm² at E = 800 kV/cm.     

The effects of the post-annealing time on the growth mechanism of Bi2Sr2Ca1Cu2O8+∂ thin films produced on MgO (100) single crystal substrates by pulsed laser deposition (PLD)

Bi₂Sr₂Ca₁Cu₂O_8+∂ thin films were deposited on MgO (100) substrates by pulsed laser deposition (PLD). The effects of post-annealing time on the phase formation, the structural and superconducting properties of the films have been investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), temperature dependent resistivity (R–T), atomic force microscopy (AFM), and DC magnetization measurements. The films deposited at 600 °C were post-annealed in an atmosphere of a gas mixture of Ar (93%) and O₂ (7%), at 860 °C for 10, 30, and 60 min. All films have demonstrated a mainly single phase of 2212 with a high crystallinity (FWHM≈0.159°) and c-axis oriented. The critical temperature, T_C, of the films annealed for 10, 30, and 60 min were obtained as 77, 78, and 78 K, respectively. The highest critical current density, J_C, was calculated as 3.34×10⁷ A/cm² for the film annealed at 860 °C for 30 min at 10 K.     

Diamond based field-effect transistors with SiNx and ZrO2 double dielectric layers

A diamond-based field-effect transistor (FET) with SiN_x and ZrO₂ double dielectric layer has been demonstrated. The SiN_x and ZrO₂ gate dielectric are deposited by plasma-enhanced chemical vapor deposition (PECVD) and radio frequency (RF) sputter methods, respectively. SiN_x layer is found to have the ability to preserve the conduction channel at the surface of hydrogen-terminated diamond film. The leakage current density (J) of SiN_x/ZrO₂ diamond metal-insulator-semiconductor FET (MISFET) keeps lower than 3.88 × 10^− 5 A·cm^− 2 when the gate bias was changed from 2 V to − 8 V. The double dielectric layer FET operates in a p-type depletion mode, whose maximum drain-source current, threshold voltage, maximum transconductance, effective mobility and sheet hole density are determined to be − 28.5 mA·mm^− 1, 2.2 V, 4.53 mS·mm^− 1, 38.9 cm²·V^− 1·s^− 1, and 2.14 × 10¹³ cm^− 2, respectively.     

Low temperature preparation and electrical properties of sodium–potassium bismuth titanate lead-free piezoelectric thick films by screen printing

Sodium–potassium bismuth titanate (NKBT) thick films with thickness of 40 μm were prepared by screen printing. To improve the homogeneity, the sintering aids were added into the pastes as a chemical liquid-phase doping method. The results show that the addition of Bi–Li sintering aids was beneficial for both the reduction of the sintering temperature and the improvement of the electrical performance of the thick films. The thick films containing 5 wt.% Bi–Li sintering aids demonstrated optimal dielectric properties with the maximum dielectric constant of 725 and minimum dielectric loss of 2.5%. Moreover, the NKBT thick films containing 3 wt.% Bi–Li sintering aids sintered at 950 °C exhibited the remanent polarization of 19.6 μC/cm², room-temperature pyroelectric coefficient of 1.56 × 10^?4 C/(m² °C), figure of merit for specific detectivity of 0.48 × 10^?5 Pa^?0.5, and effective longitudinal piezoelectric coefficient of 88 pm/V, which are comparable to that of the high-temperature sintered thick films without sintering aids.     

Evaluation of GdBaCuCo0.5Fe0.5O5+δ as cathode material for intermediate temperature solid oxide fuel cells

The GdBaCuCo_0.5Fe_0.5O_5+δ (GBCCF) layered perovskite oxide was evaluated as novel cathode for intermediate temperature solid oxide fuel cells (IT-SOFCs). Its electrical conductivity was 9–13 S cm^?1 at 650–800 °C in air. The average thermal expansion coefficient (TEC) of GBCCF was 14.4 × 10^?6 K^?1, which was close to that of the typical electrolyte material. The cathode polarization resistance of GBCCF was 0.650 Ω cm² at 750 °C and it decreases to 0.118 Ω cm² when Ce_0.9Gd_0.1O_1.95 (GDC) was added to form a GBCCF–GDC composite cathode. Preliminary results indicated that layered perovskite GBCCF was a promising alternative cathode material for IT-SOFCs.     

Signature of multiferroicity and pyroelectricity close to room temperature in BaFe12O19 hexaferrite

In this paper, we have reported the signature of multiferroicity and pyroelectricity in BaFe₁₂O₁₉ hexaferrite close to room temperature. The BaFe₁₂O₁₉ hexaferrite samples are synthesized by co-precipitation method at different sintering temperature ranging from 800 to 1200 °C and study their structural, ferroelectric, magnetic, magnetoelectric and pyroelectric properties. X-ray Diffraction patterns show the pure phase formation for all samples. Morphological changes are examined through the scanning electron microscope. The maximum ferroelectric polarization (0.66 μC/cm²) is observed for the sample sintered at 1200 °C, however maximum magnetic polarization 74 emu/g is observed for sample sintered at 1000 °C. Magneto-electric coupling measurements are also performed through dynamic method and average magneto-electric coupling coefficient (~ 7.05 × 10⁻⁷ mV/cm Oe²) is observed at room temperature for the sample sintered at 1200 °C. Furthermore, maximum pyroelectric constant (147 × 10⁻¹³C/cm² °C) is observed at 75 °C for BaFe₁₂O₁₉ samples sintered at 1200 °C. The observation of both multiferroicity and pyroelectricity close to room temperature in BaFe₁₂O₁₉ hexaferrite is interesting and useful for multifunctional devices.     

Deformation behavior and joining of a MgF2 optical ceramic

Compressive deformation behavior of a polycrystalline magnesium fluoride (MgF₂) ceramic was investigated at temperatures ranging from 760 to 830 °C in an argon atmosphere at strain rates between 2 × 10⁻⁶ and 4 × 10⁻⁵ s⁻¹. Steady-state flow stresses increased with increasing strain rates and ranged between 2 and 38 MPa. Stress exponents of ≈1.4 ± 0.2 were determined at temperatures >760 °C, indicative of a viscous diffusion-controlled deformation mechanism. Activation energy, determined from flow stress as a function of temperature, at a constant strain rate, was ≈476 ± 60 kJ/mol. Self-joining by plastic deformation of MgF₂ was demonstrated at 830 °C at a strain rate of 5 × 10⁻⁶ s⁻¹. The joined samples were characterized by optical transmission measurements and their transmittivity was ≈80% of the unjoined sample in the 2.5–8 μm wavelength range.     

Chemical stability and electrical properties of Nb doped BaCe0.9Y0.1O3−δ as a high temperature proton conducting electrolyte for IT-SOFC

BaCe_0.9?xNb_xY_0.1O_3?δ (where x=0, 0.01, 0.03 and 0.05) powders were synthesized by solid-state reaction to investigate the influence of Nb concentration on chemical stability and electrical properties of the sintered samples. The dense electrolyte pellets were formed from the powders after being uniaxially pressed and sintered at 1550 °C. The electrical conductivities determined by impedance measurements in temperature range of 550–750 °C in different atmospheres (dry argon and wet hydrogen) showed a decreasing trend with an increase of Nb content. For all samples higher conductivities were observed in the wet hydrogen than in dry argon atmosphere. The chemical stability was enhanced with increasing of Nb concentration. It was found that BaCe_0.87Nb_0.03Y_0.1O_3?δ is the optimal composition that satisfies the opposite demands for electrical conductivity and chemical stability, reaching 0.8×10^?2 S cm^?1 in wet hydrogen at 650 °C compared to 1.01×10^?2 S cm^?1 for undoped electrolyte.