InGaAs/InP微波双极型晶体管的研制

本文叙述双收集区NpnN型InGaAs/InP异质结双极型晶体管的实验结果.给出器件的击穿特性、开关特性.高频特性和温度特性.理论分析和实验结果表明,n型InGaAs第一收集区的厚度对晶体管的击穿特性和开关特性有重要影响.器件的击穿电压BV_(CE0)=20伏,贮存时间t_s=0.5ns(Ic=50mA,I_(B1)=10mA,回抽电流I_(B2)=0),f_T=1.2GHz(V_(CE)=6V,Ic=15mA).在77～433K范围内h_(fe)变化很小,在4K下h_(fe)≌1,并表现出强烈的俄立(Early)效应.     

162GHz自对准InP/InGaAs异质结双极型晶体管

报道了发射极自对准的InP基异质结双极型晶体管.在集电极电流Ic=34.2mA的条件下,发射极面积为0.8μm×12μm的InP HBT截止频率fT为162GHz,最大振荡频率fmax为52GHz,最大直流增益为120,偏移电压为0.10V,击穿电压BVCEO达到3.8V(Ic=0.1μA).这种器件非常适合在高速低功耗方面的应用,例如OEIC接收机以及模拟数字转换器.     

A 162GHz Self-Aligned InP/InGaAs Heterojunction Bipolar Transistor

报道了发射极自对准的InP基异质结双极型晶体管.在集电极电流Ic=34.2mA的条件下,发射极面积为0.8μm×12μm的InP HBT截止频率fT为162GHz,最大振荡频率fmax为52GHz,最大直流增益为120,偏移电压为0.10V,击穿电压BVCEO达到3.8V(Ic=0.1μA).这种器件非常适合在高速低功耗方面的应用,例如OEIC接收机以及模拟数字转换器.     

硅异质结晶体管的试制

本文较详细地分析了Si/α-Si异质结晶体管(HBT)的微波性能和工艺优点,简述了工艺过程,初步实验结果证实:Si/α-Si HBT具有较好的小电流特性,晶体管的h_(fe)=12(V_(CE=10V,I_C=1mA),BV_(CEO)=20V。     

InP/InGaAs/InP双异质结双极晶体管技术研究

介绍了InP/InGaAs/InP双异质结双极晶体管(DHBT)材料生长、器件结构与设计、制作工艺和性能测试以及在振荡器中的应用等方面的研究.采用发射极-基极自对准工艺制作了InP/InGaAs/InP DHBT器件,发射极尺寸为1.5μm×10μm的器件小电流直流增益β约25,集电极-发射极击穿电压BVCEO≥10V,截止频率,ft和最高振荡频率,fmax分别为50和55GHz;     

低开启电压的InGaP/GaAsSb/GaAs双异质结晶体管

采用窄禁带宽度材料GaAsSb作为异质结晶体管的基区材料 ,成功研制出了能有效降低电路工作电压和功率损耗的低开启电压的NPNInGaP/GaAsSb/GaAs双异质结晶体管 (doubleheterojunctionbipolartransistor,DHBT) .器件性能如下 :BE结的正向开启电压 (turn onvoltage)仅为 0 73V ;当IB=1μA/step时 ,直流增益达到了 10 0 ,BVCEO=5～ 6V .通过对基区不同Sb含量器件的比较得到 ,器件的直流特性与基区Sb的含量有关.     

InP/InGaAs/InP双异质结双极晶体管技术研究

介绍了InP/InGaAs/InP双异质结双极晶体管(DHBT)材料生长、器件结构与设计、制作工艺和性能测试以及在振荡器中的应用等方面的研究.采用发射极-基极自对准工艺制作了InP/InGaAs/InP DHBT器件,发射极尺寸为1.5μm×10μm的器件小电流直流增益β约25,集电极-发射极击穿电压BVCEO≥10V,截止频率,ft和最高振荡频率,fmax分别为50和55GHz;     

用氧化镉(CdO)做宽发射区的磷化铟平面型扩散晶体管

本文提出了一种新型的异质结双极型晶体管.该管的收集区和基区由磷化铟材料做成.和硅平面晶体管类似,管子的基区采用一般的氧化层(Al_2O_3)掩蔽扩散工艺(在这里是锌扩散).而管子的发射区则采用溅射氧化镉簿层的方法形成,因而管子的结构是平面型的.氧化镉是一种宽禁带(Eg=2.3eV)的N型半导体.氧化镉和磷化铟组成了晶体管的宽发射极.本文介绍了制管工艺.给出并分析了晶体管的伏一安特性.初步结果是:晶体管共发射极电流增益h_f_a=10(I_C=50mA,V_(cr)=15V).发射极一收集极间的击穿电压BV_(CED)=30V.这种晶体管及其工艺为InGaASP/InP器件及其光电集成制作提供了一条可能的新途径.     

Si/a-Si:H异质结微波双极型晶体管实验研究

本文首次报道采用重掺杂的氢化非晶硅(n~+a-Si∶H)作发射极的硅微波双极型晶体管的制备和特性.该器件内基区方块电阻2kΩ/□,基区宽度0.1μm,共发射极最大电流增益21(V_(cB)=6V,I_c=15mA),发射极Gummel数G_B值已达1.4×10~(14)Scm~(-4).由S参数测得电流增益截止频率f_s=5.5GHz,最大振荡频率f_(max)=7.5GHz.在迄今有关Si/a-Si HBT的报道中,这是首次报道可工作于微波领域里的非晶硅发射极异质结晶体管.     

MBE生长的InP DHBT的性能

报道了一种自对准InP/InGaAs 双异质结双极晶体管的器件性能.成功制作了U型发射极尺寸为2μm×12μm的器件,其峰值共射直流增益超过300,残余电压约为0.16V,膝点电压仅为0.6V,而击穿电压约为6V.器件的截至频率达到80GHz,最大震荡频率为40GHz.这些特性使此类器件更适合于低压、低功耗及高频方面的应用.     

Fabrication of a 1.55-μm VCSEL and an InGaAsP-InP HBT from acommon epitaxial structure

A common epitaxial structure is used for the fabrication of a 1.55-μm vertical-cavity surface-emitting laser and an InGaAsP-InP heterojunction bipolar transistor (HBT). By selectively applying zinc diffusion directly after growth, the doping type of the HBT cap and emitter is reversed, providing the epitaxial material used for the laser. This enables a similar process to be used for the two devices. Fabricated HBTs show a current gain of 400 at a collector current of 20 mA. Lasers are electrically pumped and operate continuous wave up to -70°C     

SiGe heterojunction bipolar transistors with thin α-Siemitters

A SiGe-base heterojunction bipolar transistor with an extremely thin n hydrogenated amorphous Si (α-Si:H) emitter is proposed and characterized. The structure results in enhanced emitter injection efficiency, current gain, and frequency performance. The fabricated devices exhibited maximum current gains of 100 and Early voltages of 55 V. The unity current gain cutoff frequency (f _T) for a device with an emitter size of 2 μm×4 μm was 8.5 GHz     

SiGe HBT器件的研究设计

研制了一种平面集成多晶发射极SiGe HBT,并对SiGe HBT设计进行了研究分析。给出了双极晶体管的结构和关键工艺参数,并进行了流片测试,结果表明,在室温下电流增益β大于1500,最大达到3000,Vceo为5V,厄利电压VA大于10V,βVA乘积达到15000以上。这种器件对多晶Si发射极As杂质浓度分布十分敏感。     

Device characteristics of the GaAs/InGaAsN/GaAs p-n-p doubleheterojunction bipolar transistor

We have demonstrated the dc and rf characteristics of a novel p-n-p GaAs/InGaAsN/GaAs double heterojunction bipolar transistor. This device has near ideal current-voltage (I-V) characteristics with a current gain greater than 45. The smaller bandgap energy of the InGaAsN base has led to a device turn-on voltage that is 0.27 V lower than in a comparable p-n-p AlGaAs/GaAs heterojunction bipolar transistor. This device has shown f_T and f_MAX values of 12 GHz. In addition, the aluminum-free emitter structure eliminates issues typically associated with AlGaAs     

发射极-基极-发射极结构PNP型AlGaAs/GaAs HBT电流增益的理论分析

建立了PNP型异质结双极晶体管基区少数载流子浓度的解析模型.理论分析了发射极-基极-发射极布局的PNP型HBT的电流增益.讨论了不同基极电流成分,如外基区表面复合电流,基极接触处的界面复合电流,基区体内复合电流,以及刻蚀台面处的台面复合电流对电流增益的影响.     

Simulation study of the DC and AC characteristics of an a-Si:H(n)/GaAs(p)/GaAs(n) heterojunction bipolar transistor

This paper presents the results of a simulation study focused on the evaluation of the fundamental DC and high-frequency characteristics of a GaAs-based heterojunction bipolar transistor employing a wide gap emitter made of hydrogenated amorphous silicon (a-Si:H). The role of the fundamental geometric design parameters on the device performance is analysed, showing in particular that the emitter thickness has a strong impact on the DC current gain, while the base thickness weakly affects the cut-off frequency. The role of the electronic properties of the thin film amorphous emitter is also discussed, leading to the conclusion that the device AC characteristics are in fact principally limited by the poor carrier mobility typical of a-Si:H. However, a DC current gain of 4000 and a cut-off frequency close to 10 GHz can be predicted for an optimised device if standard values for the electronic parameters of the materials are assumed.     

AlGaAs/GaAs pnp heterojunction bipolar transistor with carbon-doped collector and emitter grown by atomic layer epitaxy

The first AlGaAs/GaAs pnp heterojunction bipolar transistor (HBT) grown entirely by atomic layer epitaxy (ALE) is reported. Carbon was used as the p-type dopant in the emitter and collector. The use of carbon, with its low diffusivity and the potential for very heavy doping, will lead to reduced emitter and collector resistances in a pnp structure. For the devices reported here, a common emitter current gain over 100 was obtained, with good I/V characteristics.<>