Helical states of topological insulator Bi₂Se₃

We report density functional theory analysis of the electronic and quantum transport properties of Bi(2)Se(3) topological insulator, focusing on the helical surface states at the Fermi level E(F). The calculated Dirac point and the tilt angle of the electron spin in the helical states are compared quantitatively with the experimental data. The calculated conductance near E(F) shows a V-shaped spectrum, consistent with STM measurements. The spins in the helical states at E(F) not only tilts out of the two-dimensional plane, they also oscillate with a 3-fold symmetry going around the two-dimensional Brillouin zone. The helical states penetrate into the material bulk, where the first quintuple layer contributes 70% of the helical wave functions.     

Ultrafast surface carrier dynamics in the topological insulator Bi₂Te₃

We discuss the ultrafast evolution of the surface electronic structure of the topological insulator Bi(2)Te(3) following a femtosecond laser excitation. Using time and angle-resolved photoelectron spectroscopy, we provide a direct real-time visualization of the transient carrier population of both the surface states and the bulk conduction band. We find that the thermalization of the surface states is initially determined by interband scattering from the bulk conduction band, lasting for about 0.5 ps; subsequently, few picoseconds are necessary for the Dirac cone nonequilibrium electrons to recover a Fermi-Dirac distribution, while their relaxation extends over more than 10 ps. The surface sensitivity of our measurements makes it possible to estimate the range of the bulk-surface interband scattering channel, indicating that the process is effective over a distance of 5 nm or less. This establishes a correlation between the nanoscale thickness of the bulk charge reservoir and the evolution of the ultrafast carrier dynamics in the surface Dirac cone.     

Synthesis and field emission properties of topological insulator Bi₂Se₃ nanoflake arrays

High quality Bi(2)Se(3) nanoflake arrays with a large area and high-yield production have been fabricated by chemical vapor deposition. As the essential candidate for a topological insulator, the unique surface electronic states are considered to play a crucial role distinct from the bulk. Our experimental results show that environmental doping significantly affects the field emission properties of the synthesized Bi(2)Se(3) nanoflake arrays. X-ray photoelectron spectroscopy characterizations indicate that the rapid surface oxidation may prohibit the detection of the topological surface state and results in a low field emission current. This work provides another insight to investigate the surface state of topological insulator materials.     

The effect of Ga content on In₂xGa₂-₂xO₃ nanowire transistor characteristics

We have investigated the change in structural and electrical properties of In(2x)Ga(2-2x)O(3) nanowires (x = 1, 0.69 and 0.32) grown with varied indium (In) and gallium (Ga) contents. The as-grown In(2x)Ga(2-2x)O(3) nanowires kept the cubic crystal structure of In(2)O(3) intact even when the atomic percentages of Ga were increased to 31% (x = 0.69) and 68% (x = 0.32) in comparison to the total amount of In and Ga. However, as Ga added to In(2)O(3) structure was substituted with In, the lattice constant decreased and, consequently, the main peaks observed in x-ray diffraction in the direction of (222), (400) and (440) shifted by around ～0.08°. The average threshold voltage values for the In(2x)Ga(2-2x)O(3) nanowire transistors were -9.9 V (x = 1), -6.6 V (x = 0.67) and -5.6 V (x = 0.32), exhibiting a more positive shift and the sub-threshold slope increased to 0.53 V /dec (x = 1), 0.33 V /dec (x = 0.67) and 0.27 V /dec (x = 0.32), showing an improved switching characteristic with increasing Ga.     

Metal-supported high crystalline Bi₂Se₃ quintuple layers

Atomically flat thin films of Bi(2)Se(3) were grown on Au(111) metal substrate using molecular beam epitaxy. Hexagonal atomic structures and quintuple layer steps were observed at the surfaces of grown films using scanning tunneling microscopy. Multiple sharp peaks from (003) family layers were characterized by x-ray diffraction measurements. The atomic stoichiometry of Bi and Se was considered using x-ray photoemission spectroscopy. Moiré patterns were obtained at the surfaces of one quintuple layer films due to lattice mismatch between Bi(2)Se(3) and Au. Our experiments suggest that Au is a reasonable material for electrodes in Bi(2)Se(3) devices.     

Enhanced linear magneto-resistance near the Dirac point in topological insulator Bi2(Te1−xSex)3 nanowires

Nano Research - We report the composition and back-gate voltage tuned transport properties of ternary compound Bi2(Te1−xSex)3 nanowires synthesized by chemical vapor deposition (CVD). It is...     

Direct nanoimprint lithography of Al₂O₃ using a chelated monomer-based precursor

Nanostructuring of Al?O? is predominantly achieved by the anodization of aluminum film and is limited to obtaining porous anodized aluminum oxide (AAO). One of the main restrictions in developing approaches for direct fabrication of various types of Al?O? patterns, such as lines, pillars, holes, etc, is the lack of a processable aluminum-containing resist. In this paper, we demonstrate a stable precursor prepared by reacting aluminum tri-sec-butoxide with 2-(methacryloyloxy)ethyl acetoacetate, a chelating monomer, which can be used for large area direct nanoimprint lithography of Al?O?. Chelation in the precursor makes it stable against hydrolysis whilst the presence of a reactive methacrylate group renders it polymerizable. The precursor was mixed with a cross-linker and their in situ thermal free-radical co-polymerization during nanoimprinting rigidly shaped the patterns, trapped the metal atoms, reduced the surface energy and strengthened the structures, thereby giving a ~100% yield after demolding. The imprinted structures were heat-treated, leading to the loss of organics and their subsequent shrinkage. Amorphous Al?O? patterns with line-widths as small as 17 nm were obtained. Our process utilizes the advantages of sol-gel and methacrylate routes for imprinting and at the same time alleviates the disadvantages associated with both these methods. With these benefits, the chelating monomer route may be the harbinger of the universal scheme for direct nanoimprinting of metal oxides.     

Enhanced thermoelectric properties of Bi₀.₅Sb₁.₅Te₃ films by chemical vapor transport process

Bi?.?Sb?.?Te? films were prepared by a novel chemical vapor transport process through delicate controlling the temperature of the substrate and vapor source. The power factor reaches 30 μW cm?1 K?1 at room temperature, which is much higher than the value of the Bi?.?Sb?.?Te? films prepared by other techniques. The enhancement of thermoelectric properties might be attributed to the higher carrier mobility (252 cm2 V?1 s?1), coming from the effective interparticle contiguity of (00L) oriented nanoplates embedded in the present Bi?.?Sb?.?Te? films.     

Faster response of NO₂ sensing in graphene-WO₃ nanocomposites

Graphene-based nanocomposites have proven to be very promising materials for gas sensing applications. In this paper, we present a general approach for the preparation of graphene-WO(3) nanocomposites. Graphene-WO(3) nanocomposite thin-layer sensors were prepared by drop coating the dispersed solution onto the alumina substrate. These nanocomposites were used for the detection of NO(2) for the first time. TEM micrographs revealed that WO(3) nanoparticles were well distributed on graphene nanosheets. Three different compositions (0.2, 0.5 and 0.1 wt%) of graphene with WO(3) were used for the gas sensing measurements. It was observed that the sensor response to NO(2) increased nearly three times in the case of graphene-WO(3) nanocomposite layer as compared to a pure WO(3) layer at room temperature. The best response of the graphene-WO(3) nanocomposite was obtained at 250?°C.     

Investigation of THz birefringence measurement and calculation in Al₂O₃ and LiNbO₃

Based on the polarization-sensitive terahertz time-domain spectroscopy, we measured the birefringence for Al?O? and LiNbO? single crystals, which correspond to trigonal structures that have an uniaxial birefringence, in the THz frequency range of 0.25 to 1.4 THz. For more comprehensive understanding of the THz birefringence, the measured birefringence is compared with the results of ab initio calculations. The measured birefringence shows good agreement with the calculated value.     

Surfactant-free CuInSe₂ nanocrystals transformed from In₂Se₃ nanoparticles and their application for a flexible UV photodetector

In(2)Se(3) nanoparticles were synthesized in an aqueous solution without using any surfactant and then chemically transformed into CuInSe(2) nanocrystals. The transformation was thermodynamically favorable and fast. The 93% production yield in mild reaction conditions allowed mass production of the CuInSe(2) nanocrystals. By the virtue of the surface charges, the CuInSe(2) nanocrystals were well dispersed in polar solvents. The surfactant-free nanocrystals enabled the formation of semiconducting CuInSe(2) films on a flexible polymer substrate without any thermal treatment. We took advantage of this to fabricate a flexible UV photodetector. The current and sensitivity of the devices could be improved by utilizing CuInSe(2) nanocrystals annealed at 160?°C in the reaction batch. On bending test, the detection sensitivity remained the same until the bending radius was reduced down to 4 mm. The dynamic response of the film device was stable and reproducible during light illumination (350 nm).     

Formation of three-dimensional urchin-like α-Fe₂O₃ structure and its field-emission application

A three-dimensional urchin-like α-Fe(2)O(3) microstructure is formed via a simple, template-free, and one-step thermal oxidation of Fe spheres in an air atmosphere at temperatures in the range of 300-450 °C. The urchin-like α-Fe(2)O(3) microstructure consists of crystalline α-Fe(2)O(3) nanoflakes grown perpendicularly on the surface of the sphere, a shell layer of α-Fe(2)O(3)/Fe(3)O(4), and an Fe core. During the oxidation process, the nanoflakes germinate and grow from cracks in the oxidation layer on the surface. The length of the nanoflakes increases with oxidation time. The tip diameters of the nanoflakes are in ranges of 10-20 nm at 300 °C, 20-30 nm at 350 °C, and 40-60 nm at 400 °C; the length can reach up to a few micrometers. The field-emission characteristics of the samples are experimentally studied and simulated. The results show that the urchin-like emitter has a low turn-on field of 2.8 V/μm, high field-enhancement factor of 4313, excellent emission uniformity of over 4 cm(2), and good emission stability during a 24 h test.     

Influence of plasmonic Au nanoparticles on the photoactivity of Fe₂O₃ electrodes for water splitting

An experimental study of the influence of gold nanoparticles on α-Fe(2)O(3) photoanodes for photoelectrochemical water splitting is described. A relative enhancement in the water splitting efficiency at photon frequencies corresponding to the plasmon resonance in gold was observed. This relative enhancement was observed only for electrode geometries with metal particles that were localized at the semiconductor-electrolyte interface, consistent with the observation that minority carrier transport to the electrolyte is the most significant impediment to achieving high efficiencies in this system.     

Room-temperature resistive H₂ sensing response of Pd/WO₃ nanocluster-based highly porous film

Hydrogen- (H?-) induced resistive response of palladium (Pd) coated tungsten oxide (WO?) films prepared by using supersonic cluster beam deposition (SCBD) was investigated. An SCBD WO? film is found to be constructed of WO? nanoclusters of diameters of 3-5 nm. The nanoclusters are loosely connected to form a structure of high porosity around 66%. With this structure, the film exhibits many excellent room-temperature H? sensing properties, including high sensitivity, broad detectable range of H? concentration, low detection limit, fast response rate, excellent cyclic stability (>2400 cycles), high selectivity against vapor of many organic compounds, mild ambient pressure dependence and many other advantages such as low power consumption, miniaturizability and high batch-to-batch reproducibility. These findings are useful for making new high-quality H? sensors for monitoring the leakage of H? and ensuring safe use of this gas.     

Gold-nanoparticle-functionalized In₂O₃ nanowires as CO gas sensors with a significant enhancement in response

We present the room-temperature sensing of gold nanoparticle (AuNP)-functionalized In(2)O(3) nanowire field-effect transistor (NW-FET) for low-concentration CO gas. AuNPs were functionalized onto In(2)O(3) nanowires via a self-assembled monolayer of p-aminophenyltrimethoxysilane (APhS-SAM). The nanowires were mounted onto the Au electrodes with both ends in Schottky contacts. High sensor response toward low concentration of CO gas (200 ppb-5 ppm) at room temperature is achieved. The presence of AuNPs on the surface of In(2)O(3) nanowire serves to enhance the CO oxidation due to a higher oxygen ion-chemisorption on the conductive AuNP surfaces. Detailed studies showed that the sensing capabilities were greatly enhanced in comparison to those of bare nanowires or low coverage of Au NP-decorated nanowires. When the sensor is exposed to CO, the CO molecules interact with the preadsorbed oxygen ions on the AuNP surface. The CO oxidation on the AuNPs leads to the transfer of electrons into the semiconducting In(2)O(3) nanowires and this is reflected as the change in conductance of the NW-FET sensor. This work provides a promising approach for fabricating nanowire devices with excellent sensing capabilities at room temperature.     

Magnetothermoelectric Properties of Extruded Bi85Sb15〈Pb,Te〉

Inorganic Materials - Bi85Sb15 + 0.01 at % Pb materials have been synthesized and their electrical conductivity σ, thermoelectric power α, Hall coefficient RH, and thermal conductivity...     

Reduction in thermal conductivity of Bi–Te alloys through grain refinement method

Ternary alloys of thermoelectric materials Bi–Sb–Te and Bi–Se–Te of molecular formula, Bi_0·5Sb_1·5Te₃ (p type) and Bi_0·36Se_0·064Te_0·576 (n type), were prepared by mechanical alloying method. The preparation of materials by mechanical alloying method has effectively reduced the thermal conductivity by generating a large number of induced grain boundaries with required degree of disorder. The process of frequent milling was adapted for grain refinement. Substantial reduction in thermal conductivity was achieved due to nano-structuring of these alloys. Thermal conductivity values were found to be very low at room temperature, 0·5 W/mK and 0·8 W/mK, respectively for p and n type materials.     

Azimuthally unidirectional transport of energy in magnetoelectric fields: topological Lenz’s effect

Magnetic-dipolar modes (MDMs) in a quasi-2D ferrite disc are microwave energy-eigenstate oscillations with topologically distinct structures of rotating fields and unidirectional power-flow circulations. At the first glance, this might seem to violate the law of conservation of an angular momentum, since the microwave structure with an embedded ferrite sample is mechanically fixed. However, an angular momentum is seen to be conserved if topological properties of electromagnetic fields in the entire microwave structure are taken into account. In this paper, we show that due to the topological action of the azimuthally unidirectional transport of energy in a MDM-resonance ferrite sample there exists the opposite topological reaction on a metal screen placed near this sample. We call this effect topological Lenz’s effect. The topological Lenz’s law is applied to opposite topological charges: one in a ferrite sample and another on a metal screen. The MDM-originated near fields – the magnetoelectric (ME) fields – induce helical surface electric currents and effective charges on a metal. The fields formed by these currents and charges will oppose their cause.