试验设计方法在超声楔形焊工艺优化中的应用

采用实验设计方法对超声楔形焊引线键合工艺进行实验设计,研究了超声功率、键合压力和键合时间对键合强度的影响,得到了拟合程度好的统计模型和优化后的超声楔形焊工艺参数。在最优的工艺条件下,键合质量得到了提高。     

红外探测器芯片高可靠性键合工艺研究

金丝键合工艺广泛应用于红外探测器的封装环节。实验选用25μm金丝,基于正交试验法,根据键合拉力值确定键合的最佳工艺参数。通过优化超声压力、超声功率、超声时间及接触力等工艺参数组合,改善了键合引线的电气连接性能和连接强度,从而提高芯片系统的信号传输质量。提出的引线键合工艺参数组合适用于红外探测芯片的键合。     

功率器件引线键合参数研究

引线键合作为芯片封装的关键工艺,其键合质量直接影响器件性能.功率器件普遍采用粗铝丝超声楔形键合,对芯片区域第一键合点和第二键合点键合工艺参数进行了系统研究,并以剪切力作为衡量键合质量的方法,采用单因子分析法,研究各个参数对键合点强度的影响,利用正交试验方法,确定最优参数,并比较两类键合点的差异,为该领域引线键合工艺参数...     

基于Rogers 5880复合介质基板的金丝楔焊键合工艺参数研究

运用正交试验法对键合效果进行了工艺参数优化方案设计和试验验证,以金丝键合强度为目标分别考察了键合功率、键合压力和键合时间3个工艺参数对键合金丝压点形态变化的影响,最终获取最优工艺参数组合为键合功率100 mW,键合时间220 ms,键合压力18 g,达到了提高金丝键合工艺可靠性的目的.     

基于正交试验的芯片堆叠封装引线键合工艺研究

选取0.2032 mm (8 mil)金线采用热压超声键合工艺进行烧球、拉力和线尾等一系列正交试验,分析各个键合参数对键合质量的影响。研究结果表明,最优的引线键合工艺窗口为键合温度180℃或190℃、键合功率35 mW、键合时间15 ms或20 ms、键合压力0.12 N、烧球电流3200 mA、烧球时间350μs和尾丝长度20μm。在影响键合质量的各因素中,键合功率和键合压力对键合质量的影响显著,过大的键合功率会引起键合区被破坏,键合强度降低,过小的键合功率因能量不足会引起欠键合,键合强度降低。过大的键合压力会引起键合球变形而导致键合强度降低,过小的键合压力因欠键合而导致键合强度降低。     

引线键合技术进展

引线键合以工艺简单、成本低廉、适合多种封装形式而在连接方式中占主导地位.对引线键合工艺、材料、设备和超声引线键合机理的研究进展进行了论述与分析,列出了主要的键合工艺参数和优化方法,球键合和楔键合是引线键合的两种基本形式,热压超声波键合工艺因其加热温度低、键合强度高、有利于器件可靠性等优势而取代热压键合和超声波键合成为键合法的主流,提出了该技术的发展趋势,劈刀设计、键合材料和键合设备的有效集成是获得引线键合完整解决方案的关键.     

InSb红外探测器芯片金丝引线键合工艺研究

InSb红外探测器芯片镀金焊盘与外部管脚的引线键合质量直接决定着光电信号输出的可靠性,对于引线键合质量来说,超声功率、键合压力、键合时间是最主要的工艺参数。从实际应用出发,采用KS公司4124金丝球焊机实现芯片镀金焊盘与外部管脚的引线键合,主要研究芯片镀金焊盘第一焊点键合工艺参数对引线键合强度及键合区域的影响,通过分析键合失效方式,结合焊点的表面形貌,给出了适合InSb芯片引线键合质量要求的最优工艺方案,为实现InSb芯片引线键合可靠性的提高打下了坚实的基础。     

25μm Au丝引线键合正交试验研究

通过分析键合工艺参数,为25μm Au丝引线键合的应用提供实验依据。采用正交试验法对键合工艺参数进行试验研究。起决定性作用的是因素间的交互作用和劈刀的安装长度,其次为压力、超声功率、超声时间、热台温度、劈刀温度。各因素影响力大小为A>B>F>C>D>E,较优工艺方案为A_2B_2C_1D_2E_1F_1,回归模型为Y=13.124+0.731A-0.393B-0.057C+0.022D+0.013F。除以上主要影响因素,Au丝弧度也是需要考虑的。给进一步研究引线键合提供重要依据。     

引线键合尾丝控制分析及解决方法

引线键合技术是微电子元器件封装工艺流程中的关键工序，是后道封装工艺中电气互连的主要工艺手段。针对高密度精密键合工艺要求，通过全自动引线键合机的送丝机构、键合劈刀结构、焊接参数和断丝工艺参数等四个方面进行尾丝的形成分析，并在全自动引线键合机上进行楔形键合，最终得到形貌良好的键合焊点。     

微波电路引线键合质量的影响因素分析

在一级封装的三种实现电气连接的互连方法中,内引线键合是一种传统的最成熟的技术.其工艺主要分为球焊与楔焊,其中后者由于焊点较小,适用于微波混合电路的组装.从工艺的角度出发,明确了除引线键合参数(超声频率和功率、温度、压力、时间)的设置以外,键合表面与界面的问题对引线键合的质量影响极大,并分别从键合材料的选用、键合表面的状态、键合工具的选型等三方面进行论述.同时结合实际工作,对常见的键合问题与原因分析以及引线键合质量评估的方法进行了说明.     

Comparison of the copper and gold wire bonding processes for LED packaging

Wire bonding is one of the main processes of the LED packaging which provides electrical interconnection between the LED chip and lead frame. The gold wire bonding process has been widely used in LED packaging industry currently. However, due to the high cost of gold wire, copper wire bonding is a good substitute for the gold wire bonding which can lead to significant cost saving. In this paper, the copper and gold wire bonding processes on the high power LED chip are compared and analyzed with finite element simulation. This modeling work may provide guidelines for the parameter optimization of copper wire bonding process on the high power LED packaging.     

Comparison of the copper and gold wire bonding processes for LED packaging

Wire bonding is one of the main processes of the LED packaging which provides electrical interconnection between the LED chip and lead frame.The gold wire bonding process has been widely used in LED packaging industry currently.However,due to the high cost of gold wire,copper wire bonding is a good substitute for the gold wire bonding which can lead to significant cost saving.In this paper,the copper and gold wire bonding processes on the high power LED chip are compared and analyzed with finite element simulation.This modeling work may provide guidelines for the parameter optimization of copper wire bonding process on the high power LED packaging.     

LTCC基板金丝热超声楔焊正交试验分析

引线键合是微组装技术中的关键工艺,广泛应用于军品和民品芯片的封装。特殊类型基板的引线键合失效问题是键合工艺研究的重要方向。低温共烧陶瓷(LTCC)电路基板在微波多芯片组件中使用广泛,相对于电镀纯金基板,该基板上金焊盘楔形键合强度对于参数设置非常敏感。文章进行了LTCC基板上金丝热超声楔焊的正交试验,在热台温度、劈刀安装长度等条件不变的情况下,分别设置第一键合点和第二键合点的超声功率、超声时间和键合力三因素水平,试验结果表明第一点超声功率和第二点超声时间对键合强度影响明显。     

Modeling of copper wire bonding process on high power LEDs

In this paper, a couple thermal mechanical transient dynamic finite element framework of copper wire bonding process on high power lighting emitting diodes (LEDs) is developed, which considers the thermal heating effects of friction and plastic deformation. The whole wire bonding process is simplified to consist of impact and ultrasonic vibration stages. Parametric studies are also carried out to examine the effects of ultrasonic vibration amplitude and bonding force on stress/strain distribution and friction thermal heating effect during wire bonding process. Different friction coefficients of interface between the free air ball (FAB) and the bond pad are taken in the simulation to examine the effects of friction on the stress and strain level of electrode structure. Modeling results show that the stress/strain distribution and temperature evolution of wire bonding system are significant influenced by the ultrasonic vibration amplitudes, bonding forces and friction coefficients. Discussion and comparison are conducted between the copper and the gold wire bonding processes on the high power LEDs by numerical simulation. The results have disclosed that higher stress/strain in the bond pad and the ohmic contact layer is induced during the copper wire bonding process. Therefore, the process parameters of copper wire bonding should be controlled carefully. This numerical simulation work may provide guidelines for the copper wire bonding process virtual window development of high power LEDs packaging.     

金丝键合工艺技术研究

金丝键合是芯片组装的关键工序。分析了金丝键合的工艺控制要点：键合时间和键合功率,通过工艺实验总结出了键合时间和键合功率对键合强度的影响规律：（1）在小超声功率条件下,键合强度对键合时间敏感,键合强度随时间增加迅速增大;在大超声功率条件下,键合强度对键合时间的敏感性下降。（2）超声功率过小不能形成足够的键合强度,超声功率过大使得键合成功后的键合强度被破坏,即过高的超声功率将不利于键合强度的提高。     

共漏极双功率MOSFET封装研究

针对适用于锂电池保护电路特点要求的共漏极功率MOSFET的封装结构进行了研发和展望.从传统的TSSOP-8发展到替代改进型SOT-26,一直到芯片级尺寸的微型封装外形,其封装效率越来越高,接近100%.同时,在微互连和封装结构的改进方面,逐渐向短引线或焊球无引线、平坦式引脚、超薄型封装和漏极焊盘散热片暴露的方向发展,增...     

金丝楔形键合强度的影响规律分析

金丝楔形键合是一种通过超声振动和键合力协同作用来实现芯片与电路引出互连的技术。现今,此引线键合技术是微电子封装领域最重要、应用最广泛的技术之一。引线键合互连的质量是影响红外探测器组件可靠性和可信性的重要因素。基于红外探测器组件,对金丝楔形键合强度的多维影响因素进行探究。从键合焊盘质量和金丝楔焊焊点形貌对键合强度的影响入手,开展了超声功率、键合压力及键合时间对金丝楔形键合强度的影响研究。根据金丝楔焊原理及工艺过程,选取红外探测器组件进行强度影响规律试验及分析,指导实际金丝楔焊工艺,并对最佳工艺参数下的金丝键合拉力均匀性进行探究,验证了金丝楔形键合强度工艺一致性。     

Influence of surface contamination on metal/metal bond contact quality

The influence of surface cleanliness of Au/Ni coated multichip materials (MCMs), Ag plated Cu lead frames, and Al bond pads on semiconductor chips on the strength of Au wire bond contacts has been investigated. A clean surface is important for good adhesion in any kind of attachment process. Investigations by means of x-ray photoelectron spectroscopy have been performed on the bond substrates to determine the chemical composition, the nature as well as the thickness of the contamination layer. The influence of contamination on bond contact quality has been examined by pull force measurements, which is an established test method in semiconductor packaging industry for evaluating the quality of wire bonds. The results clearly show that a strong correlation between the degree of contamination of the substrate and pull strength values exists. Furthermore, a contamination thickness limiting value of 4 nm for Au and Ag substrates was determined, indicating good wire bond contact quality. The effect of plasma cleaning on wire bondability of metallic and organic (MCMs) substrates has been examined by pull force measurements. These results confirm the correlation between surface contamination and the strength of wire bond contacts for Au/Ni coated MCMs and Ag plated Cu lead frames. Atomic force microscopy measurements have been performed to determine the roughness of bond surfaces, demonstrating the importance of nanoscale characterization with regard to the bonding behavior of the substrates. Finally, bonding substrates used in integrated circuit packaging are discussed with regard to their Au wire bonding behavior. The Au wire bonding process first results in a cleaning effect of the substrate to be joined and secondly enables the change of bonding energy into frictional heat giving rise to an enhanced interdiffusion at the interface.     

基于正交试验的金丝键合工艺参数优化

金丝键合是实现微波多芯片组件电气互连的关键技术。介绍了引线键合技术的基本形式,分析了键合工艺参数对键合质量的影响。基于正交试验方法,通过对影响25μm金丝键合第一键合点质量的工艺参数优化进行试验研究,确定最优化的工艺参数水平组合,达到提高金丝键合工艺可靠性的目的。     

微电子器件封装铜线键合可行性分析

虽然在集成电路封装工艺中金导线键合是主流制程,但是目前采用铜导线替代金导线键合已经在半导体封装领域形成重要研究趋势。文章对微电子封装中铜导线键合可行性进行了分析,主要包括铜导线与金导线的性能比较(包括电学性能、物理参数、机械参数等),铜导线制备和微组织结构分析,铜导线焊合中的工艺研发及铜导线焊合可靠性分析等。当今半导体生产商关注铜导线不仅是因为其价格成本优势,更由于铜导线具有良好的电学和机械特性,同时文中也介绍了铜导线键合工艺存在的诸多问题和挑战,对将来铜导线在集成电路封装中的大规模应用和发展具有一定的参考意义。